SIGNAL TRANSMISSION CIRCUIT FOR PROVIDING CONTROL INFORMATION FROM SECONDARY SIDE TO PRIMARY SIDE OF POWER CONVERTER, AND CONTROL CIRCUIT FOR POWER CONVERTER
Granted: November 4, 2021
Application Number:
20210344273
A signal transmission circuit is configured for transmitting control information from a secondary side of a power converter to a primary side of the power converter. The signal transmission circuit includes a transmitter circuit, a signal transformer and a detection circuit. The transmitter circuit is configured to generate a ramp signal at least according to a first control signal outputted from the secondary side. The first control signal indicates the control information provided for…
SEMICONDUCTOR PACKAGE AND METHOD OF MAKING THE SAME
Granted: November 4, 2021
Application Number:
20210343630
A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second low side FET, a first high side FET, a second high side FET, a first metal clip, a second metal clip, and a molding encapsulation. The semiconductor package further comprises an optional integrated circuit (IC) controller or an optional inductor. A method for fabricating a semiconductor package. The method comprises the steps of providing a lead frame; attaching a first low side FET, a second…
FLYBACK CONVERTER FOR CONTROLLING ON TIME VARIATION
Granted: August 19, 2021
Application Number:
20210257920
A flyback converter to control conduction time in AC/DC conversion technology. The flyback converter includes a primary side and a secondary side. The primary side includes a main switch connecting a primary coil to the input of the flyback converter in series. The secondary side includes a secondary coil coupling with the output terminal of the flyback converter. When a switching frequency of the main switch is at a preset first on time in the range between the off frequency and the…
CONSTANT ON-TIME FLYBACK CONVERTER AND CONTROL METHOD THEREOF
Granted: August 19, 2021
Application Number:
20210257916
When a constant on-time flyback converter is in the switch-on stage, the gate voltage of the switch and the input voltage of the flyback converter adopt the primary side of the transformer to control. The gate voltage is controlled by the second control signal generated by the controller. The flyback converter is then turn off to enter the switch off stage. When the flyback converter is in the switch off stage, the secondary side controller on the secondary side of the transformer, based…
MULTI-PORT POWER DELIVERY SYSTEM AND RELATED CONTROL METHOD
Granted: July 22, 2021
Application Number:
20210223838
A multi-port power delivery system includes a first universal serial bus (USB) port, a second USB port, a first power conversion unit, a second power conversion unit, a power delivery control circuit and a switch circuit. The first USB port is configured to output power delivered to a first power path. The second USB port is configured to output power delivered to a second power path. The first power conversion unit has a first output terminal coupled to the first power path. The second…
POWER MODULE HAVING INTERCONNECTED BASE PLATE WITH MOLDED METAL AND METHOD OF MAKING THE SAME
Granted: June 10, 2021
Application Number:
20210175155
An interconnected base plate comprises a metal layer, a plurality of metal pads, and a molding encapsulation. The mold compound layer encloses a majority portion of the plurality of metal pads 240. A respective top surface of each of the plurality of metal pads is exposed from a top surface of the molding encapsulation. The respective top surface of said each of the first plurality of metal pads and the top surface of the mold compound layer are co-planar. A power module comprises the…
SEMICONDUCTOR PACKAGE HAVING THIN SUBSTRATE AND METHOD OF MAKING THE SAME
Granted: April 29, 2021
Application Number:
20210125940
A semiconductor package comprises a semiconductor substrate, a first metal layer, an adhesive layer, a second metal layer, a rigid supporting layer, and a plurality of contact pads. A thickness of the semiconductor substrate is equal to or less than 50 microns. A thickness of the rigid supporting layer is larger than the thickness of the semiconductor substrate. A thickness of the second metal layer is larger than a thickness of the first metal layer. A method comprises the steps of…
INTELLIGENT POWER MODULE CONTAINING IGBT AND SUPER-JUNCTION MOSFET
Granted: April 1, 2021
Application Number:
20210098448
An intelligent power module (IPM) comprises a first, second, third and fourth die supporting elements, a first group of insulated gate bipolar transistors (IGBTs), a second group of IGBTs, a first group of super-junction metal-oxide-semiconductor field-effect transistors (MOSFETs), a second group of super-junction MOSFETs, a fifth die supporting element, a low voltage IC, a high voltage IC, and a molding encapsulation. The low and high voltage ICs are attached to the fifth die supporting…
POWER SEMICONDUCTOR PACKAGE HAVING INTEGRATED INDUCTOR AND METHOD OF MAKING THE SAME
Granted: March 18, 2021
Application Number:
20210082790
A power semiconductor package includes a lead frame, a low side field-effect transistor (FET), a high side FET, a first metal clip, a second metal clip, an inductor assembly, and a molding encapsulation. The low side FET is flipped and is attached to a first die paddle of the lead frame. A method for fabricating a power semiconductor package. The method comprises the steps of providing a lead frame; attaching a low side FET and a high side FET to the lead frame; mounting a first metal…
COMMON SOURCE LAND GRID ARRAY PACKAGE
Granted: March 18, 2021
Application Number:
20210083088
A semiconductor package comprises a land grid array substrate, a first VDMOSFET, a second VDMOSFET, and a molding encapsulation. The land grid array substrate comprises a first metal layer, a second metal layer, a third metal layer, a plurality of vias, and a resin. A series of drain pads at a bottom surface of the semiconductor package follow a “drain 1, drain 2, drain 1, and drain 2” pattern. A method for fabricating a semiconductor package. The method comprises the steps of…
SUPER-FAST TRANSIENT RESPONSE (STR) AC/DC CONVERTER FOR HIGH POWER DENSITY CHARGING APPLICATION
Granted: December 31, 2020
Application Number:
20200412148
A charger comprises a housing, a first multi-layer printed circuit board (PCB), a second multi-layer PCB, and a third multi-layer PCB. The first PCB comprises at least a portion of a primary side circuit. The second PCB comprises at least a portion of a secondary side circuit. The third PCB is perpendicular to the first PCB and the second PCB. An isolation coupling element is disposed on the third PCB. The isolation coupling element comprises a multi-layer PCB. The first PCB comprises a…
SEMICONDUCTOR PACKAGE AND METHOD OF MAKING THE SAME
Granted: December 31, 2020
Application Number:
20200411422
A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second low side FET, a first high side FET, a second high side FET, a first metal clip, a second metal clip, and a molding encapsulation. The semiconductor package further comprises an optional integrated circuit (IC) controller or an optional inductor. A method for fabricating a semiconductor package. The method comprises the steps of providing a lead frame; attaching a first low side FET, a second…
SEMICONDUCTOR PACKAGE AND METHOD OF MAKING THE SAME
Granted: June 18, 2020
Application Number:
20200194395
A semiconductor package has a plurality of pillars or portions of a plurality of lead strips, a plurality of semiconductor devices, one or two molding encapsulations and a plurality of electrical interconnections. The semiconductor package excludes a wire. The semiconductor package excludes a clip. A method is applied to fabricate semiconductor packages. The method includes providing a removable carrier; forming a plurality of pillars or a plurality of lead strips; attaching a plurality…
SEMICONDUCTOR PACKAGE AND METHOD OF MAKING THE SAME
Granted: June 18, 2020
Application Number:
20200194347
A semiconductor package has a plurality of pillars or portions of a plurality of lead strips, a plurality of semiconductor devices, one or two molding encapsulations and a plurality of electrical interconnections. The semiconductor package excludes a wire. The semiconductor package excludes a clip. A method is applied to fabricate semiconductor packages. The method includes providing a removable carrier; forming a plurality of pillars or a plurality of lead strips; attaching a plurality…
HV CONVERTER WITH REDUCED EMI
Granted: December 19, 2019
Application Number:
20190385953
A high voltage (HV) converter implemented on a printed circuit board (PCB) includes a double diffused metal oxide semiconductor (DMOS) package comprising a lead frame and a main DMOS chip. The lead frame includes a gate section electrically connected to a gate electrode of the main DMOS chip, a source section electrically connected to a source electrode of the main DMOS chip and a drain section electrically connected to a drain electrode of the main DMOS chip. The PCB layout includes a…
SEMICONDUCTOR DEVICE HAVING ONE OR MORE TITANIUM INTERLAYERS AND METHOD OF MAKING THE SAME
Granted: December 19, 2019
Application Number:
20190385863
A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer. The first titanium interlayer is disposed between the first aluminum layer and the second aluminum layer. A process for fabricating a semiconductor device comprising the steps of: preparing a semiconductor wafer; depositing a first aluminum layer onto the semiconductor wafer; depositing a first titanium interlayer…
SYSTEM AND METHOD FOR EXTENDING THE MAXIMUM DUTY CYCLE OF A STEP-DOWN SWITCHING CONVERTER WITHOUT MAXIMUM DUTY CONTROL
Granted: December 5, 2019
Application Number:
20190372463
The invention proposes a system and method for extending the maximum duty cycle of a step-down switching converter to nearly 100% while maintaining a constant switching frequency. The system includes a voltage mode or current mode step-down converter driven by a leading edge blanking (LEB) signal, which operates at the desired switching frequency. More particularly, the LEB signal is connected to a slope generator and/or a current sensing network. In each switching cycle, the LEB signal…
CHARGER
Granted: October 17, 2019
Application Number:
20190318979
A charger includes a thermal conductive plate for heat dissipation, and a transistor. The transistor includes a drain terminal of a first pulsating voltage level, and a source terminal of a second pulsating voltage level. The second pulsating voltage level is lower than the first pulsating voltage level. The source terminal is disposed closer to the thermal conductive plate than the drain terminal.
HV CONVERTER WITH REDUCED EMI
Granted: October 3, 2019
Application Number:
20190304924
A high voltage (HV) converter implemented on a printed circuit board (PCB) includes a double diffused metal oxide semiconductor (DMOS) package comprising a lead frame and a main DMOS chip. The lead frame includes a gate section electrically connected to a gate electrode of the main DMOS chip, a source section electrically connected to a source electrode of the main DMOS chip and a drain section electrically connected to a drain electrode of the main DMOS chip. The PCB layout includes a…
CONSTANT ON-TIME (COT) CONTROL IN ISOLATED CONVERTER
Granted: July 4, 2019
Application Number:
20190207528
A constant on-time isolated converter comprises a transformer with a primary side and a secondary side. The primary side is connected to an electronic switch and secondary-side is connected to a load and a processor. The processor is connected to a driver on primary side through at least one coupling element and to the electronic switch. The processor receives an output voltage or an output current across the load generating a control signal accordingly. The driver receives the control…
