Applied Materials Patent Applications

SCANNING AN OBJECT USING MULTIPLE MECHANICAL STAGES

Granted: March 23, 2017
Application Number: 20170084425
A method for scanning an object, the method may include moving an object by a first mechanical stage that follows a first scan pattern; introducing multiple movements, by a second mechanical stage, between the object and the first mechanical stage while the first mechanical stage follows the first scan pattern; and obtaining, by optics, images of multiple suspected defects while the first mechanical stage follows the first scan pattern; wherein a weight of the first mechanical stage…

SELECTIVELY OPENABLE SUPPORT PLATEN FOR ADDITIVE MANUFACTURING

Granted: March 16, 2017
Application Number: 20170072466
An apparatus for forming an object includes a platform to support the object. The platform includes a first support plate including first holes and a second support plate arranged below the first support plate and including second holes. The second support plate is movable relative to the first support plate between an aligned configuration and a misaligned configuration. The apparatus further includes a dispensing system overlying the support plate to dispense a powder over the top…

FABRICATION OF BASE PLATE, FABRICATION OF ENCLOSURE, AND FABRICATION OF SUPPORT POSTS IN ADDITIVE MANUFACTURING

Granted: March 16, 2017
Application Number: 20170072467
An apparatus for forming an object includes a platform and a dispensing system overlying the platform to dispense successive layers of powder. The successive layers include support layers and object layers on the support layers. The apparatus further includes an energy source to fuse the powder. A controller is configured to cause the energy source to fuse a support region of each of the support layers to form a part support base. The controller is further configured to cause the energy…

SUBSTRATE CARRIER SYSTEM AND METHOD FOR USING THE SAME

Granted: March 16, 2017
Application Number: 20170076968
A substrate carrier system is provided. The substrate carrier system includes a substrate carrier body, an electrode assembly, a support base, and a controller. The substrate carrier body has a substrate supporting surface, and an electrode assembly is disposed in the substrate carrier body. The electrode assembly includes a plurality of laterally spaced apart electrode sets. Each electrode set includes a first electrode interleaved with a second electrode. The support base supports the…

SYSTEM TO DETECT WAFER ARCING IN SEMICONDUCTOR MANUFACTURING EQUIPMENT

Granted: March 16, 2017
Application Number: 20170077002
Methods and systems for accurate arc detection in semiconductor manufacturing tools are disclosed. Such methods and systems provide real-time arc detection and near real-time notification for corrective actions during a semiconductor manufacturing process. Such methods and systems utilize data with high sample rate and wavelet analysis to provide for more accurate arc detection, which leads to more effective and cost efficient semiconductor manufacturing operations.

APPARATUS AND METHOD FOR THIN-FILM PROCESSING APPLICATIONS

Granted: March 9, 2017
Application Number: 20170067149
According to the present disclosure, a flexible substrate coating apparatus is provided. The flexible substrate coating apparatus includes a vacuum process chamber for processing a flexible substrate. The vacuum process chamber includes one or more deposition units and a cleaning unit positioned directly downstream of the one or more deposition units. In another aspect, a method for depositing a thin-film on a flexible substrate is provided. The method for depositing a thin-film on a…

PLASMA ETCHING SYSTEMS AND METHODS WITH SECONDARY PLASMA INJECTION

Granted: March 2, 2017
Application Number: 20170062184
An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and…

METHODS FOR PRODUCING INTERCONNECTS IN SEMICONDUCTOR DEVICES

Granted: February 16, 2017
Application Number: 20170047249
A method for forming metallization in a workpiece includes electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, where the first metallization…

OXIDE ETCH SELECTIVITY SYSTEMS AND METHODS

Granted: February 9, 2017
Application Number: 20170040175
Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing…

GAS-PHASE SILICON OXIDE SELECTIVE ETCH

Granted: February 9, 2017
Application Number: 20170040180
A method of etching silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF is combined with an additional precursor in the substrate processing region. The HF may enter through one channel(s) and the additional precursor may flow through another channel(s) prior to forming the combination. The combination may be formed near the substrate. The silicon oxide etch selectivity relative to silicon nitride from is…

THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS

Granted: February 9, 2017
Application Number: 20170040190
A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that…

BOLTED WAFER CHUCK THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS

Granted: February 9, 2017
Application Number: 20170040191
A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a…

INTEGRATED BIT-LINE AIRGAP FORMATION AND GATE STACK POST CLEAN

Granted: February 9, 2017
Application Number: 20170040207
Methods of forming flash memory cells are described which incorporate air gaps for improved performance. The methods are useful for so-called “2-d flat cell” flash architectures. 2-d flat cell flash memory involves a reactive ion etch to dig trenches into multi-layers containing high work function and other metal layers. The methods described herein remove the metal oxide debris from the sidewalls of the multi-layer trench and then, without breaking vacuum, selectively remove shallow…

EXOTHERMIC POWDERS FOR ADDITIVE MANUFACTURING

Granted: January 26, 2017
Application Number: 20170021526
A method of additive manufacturing to form a component comprises successively depositing a plurality of layers to form the component. Depositing at least one of the plurality of layers includes depositing a layer of a first particulate precursor over a platen, depositing a second particulate precursor on portions of the platen over the layer of the first particulate precursor specified by a controller, and directing energy to the second particulate precursor deposited on the portion of…

BRACE STRUCTURES FOR ADDITIVE MANUFACTURING

Granted: January 19, 2017
Application Number: 20170014907
Additive manufacturing of an object includes dispensing a plurality of successive layers of powder over a top surface of a platform, fusing an object region in each of the plurality of successive layers to form the object, and fusing a brace region in a particular layer from the plurality of layers to form a brace structure to inhibit lateral motion of the powder. The brace structure is spaced apart from the particular object region by a gap of unfused powder.

SELECTIVE MATERIAL DISPENSING IN ADDITIVE MANUFACTURING

Granted: January 19, 2017
Application Number: 20170014910
Additive manufacturing includes successively forming a plurality of layers on a support. Depositing a layer from the plurality of layers includes dispensing first particles, selectively dispensing second particles in selected regions corresponding to a surface of the object, and fusing at least a portion of the layer. The layer has the first particles throughout and the second particles in the selected regions. Alternatively or in addition, forming the plurality of layers includes…

PROCESS FOR REMOVING CONTAMINATION ON RUTHENIUM SURFACE

Granted: January 19, 2017
Application Number: 20170017146
A method for pretreating an EUVL photomask having an exposed ruthenium surface includes subjecting the photomask to surface treatment in an oxidizing and reducing environment. Another method for pretreating an EUVL photomask having an exposed ruthenium surface includes subjecting the photomask to surface treatment in an oxidizing and reducing environment, and cleaning the photomask with a cleaning solution.

METAL REMOVAL WITH REDUCED SURFACE ROUGHNESS

Granted: January 19, 2017
Application Number: 20170018439
Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts…

UV-ASSISTED MATERIAL INJECTION INTO POROUS FILMS

Granted: January 19, 2017
Application Number: 20170018455
Methods are described for reducing shrinkage experienced by porous films on a patterned substrate. The film may be a silicon-and-hydrogen-containing layer which further contains one or two of carbon, oxygen and nitrogen. Shortly after deposition, the silicon-and-hydrogen-containing layer is treated by concurrent exposure to a relatively small molecule precursor (e.g. NH3 or C2H2) and a source of UV light. The treatment may reduce subsequent shrinkage experienced by the porous film even…

ADJUSTABLE REMOTE DISSOCIATION

Granted: January 12, 2017
Application Number: 20170011931
Methods of selectively etching an exposed portion of a patterned substrate relative to a second exposed portion are described. The etching process is a gas phase etch which uses an oxidizing precursor unexcited in any plasma prior to combination with plasma effluents formed in a remote plasma from an inert precursor. The plasma effluents may be combined with the oxidizing precursor in a plasma-free remote chamber region and/or in a plasma-free substrate processing region. The combination…