Applied Materials Patent Applications

SELF-ALIGNED SHIELDING OF SILICON OXIDE

Granted: May 25, 2017
Application Number: 20170148642
Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety,…

ENDPOINTING DETECTION FOR CHEMICAL MECHANICAL POLISHING BASED ON SPECTROMETRY

Granted: May 4, 2017
Application Number: 20170125313
A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the…

APPLYING DIMENSIONAL REDUCTION TO SPECTRAL DATA FROM POLISHING SUBSTRATES

Granted: April 27, 2017
Application Number: 20170113320
A plurality of spectra reflected from one or more substrates at a plurality of different positions on the one or more substrates are represented in the form of a first matrix, and the first matrix is decomposed into products of at least two component matrixes of a first set of component matrixes. The dimensions of each of the at least two component matrixes is reduced to produce a second set of component matrixes containing the at least two matrixes with reduced dimensions.

RADIAL WAVEGUIDE SYSTEMS AND METHODS FOR POST-MATCH CONTROL OF MICROWAVES

Granted: April 20, 2017
Application Number: 20170110290
A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system…

Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance

Granted: April 20, 2017
Application Number: 20170110293
A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The bulk, sintered solid solution-comprising article is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide…

HIGH ASPECT RATIO 3-D FLASH MEMORY DEVICE

Granted: April 20, 2017
Application Number: 20170110475
Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to…

POLISHING APPARATUS HAVING OPTICAL MONITORING OF SUBSTRATES FOR UNIFORMITY CONTROL AND SEPARATE ENDPOINT SYSTEM

Granted: April 13, 2017
Application Number: 20170100814
A computer-implemented method of generating reference spectra includes polishing a first substrate in a polishing apparatus having a rotatable platen, measuring a sequence of spectra from the substrate during polishing with an in-situ monitoring system, associating each spectrum in the sequence of spectra with a index value equal to a number of platen rotations at which the each spectrum was measured, and storing the sequence of spectra as reference spectra.

STRUCTURE AND METHOD OF FABRICATING THREE-DIMENSIONAL (3D) METAL-INSULATOR-METAL (MIM) CAPACITOR AND RESISTOR IN SEMI-ADDITIVE PLATING METAL WIRING

Granted: April 13, 2017
Application Number: 20170104056
Methods of processing a substrate include: providing a substrate having a polymer dielectric layer, a metal pad formed within the polymer dielectric layer and a first metal layer formed atop the polymer dielectric layer; depositing a polymer layer atop the substrate; patterning the polymer layer to form a plurality of openings, wherein the plurality of openings comprises a first opening formed proximate the metal pad; depositing a first barrier layer atop the polymer layer; depositing a…

PEAK-BASED ENDPOINTING FOR CHEMICAL MECHANICAL POLISHING

Granted: March 30, 2017
Application Number: 20170092551
A method of polishing includes storing a predetermined location and a predetermined number as criteria for detecting an end point, polishing a substrate, measuring a sequence of current spectra of light reflected from the substrate while the substrate is being polished, identifying a plurality of peaks or valleys that persist with an evolving location through at least some of the sequence of current spectra, counting a number of peaks or valleys that were identified that pass the…

SCANNING AN OBJECT USING MULTIPLE MECHANICAL STAGES

Granted: March 23, 2017
Application Number: 20170084425
A method for scanning an object, the method may include moving an object by a first mechanical stage that follows a first scan pattern; introducing multiple movements, by a second mechanical stage, between the object and the first mechanical stage while the first mechanical stage follows the first scan pattern; and obtaining, by optics, images of multiple suspected defects while the first mechanical stage follows the first scan pattern; wherein a weight of the first mechanical stage…

SELECTIVELY OPENABLE SUPPORT PLATEN FOR ADDITIVE MANUFACTURING

Granted: March 16, 2017
Application Number: 20170072466
An apparatus for forming an object includes a platform to support the object. The platform includes a first support plate including first holes and a second support plate arranged below the first support plate and including second holes. The second support plate is movable relative to the first support plate between an aligned configuration and a misaligned configuration. The apparatus further includes a dispensing system overlying the support plate to dispense a powder over the top…

FABRICATION OF BASE PLATE, FABRICATION OF ENCLOSURE, AND FABRICATION OF SUPPORT POSTS IN ADDITIVE MANUFACTURING

Granted: March 16, 2017
Application Number: 20170072467
An apparatus for forming an object includes a platform and a dispensing system overlying the platform to dispense successive layers of powder. The successive layers include support layers and object layers on the support layers. The apparatus further includes an energy source to fuse the powder. A controller is configured to cause the energy source to fuse a support region of each of the support layers to form a part support base. The controller is further configured to cause the energy…

SUBSTRATE CARRIER SYSTEM AND METHOD FOR USING THE SAME

Granted: March 16, 2017
Application Number: 20170076968
A substrate carrier system is provided. The substrate carrier system includes a substrate carrier body, an electrode assembly, a support base, and a controller. The substrate carrier body has a substrate supporting surface, and an electrode assembly is disposed in the substrate carrier body. The electrode assembly includes a plurality of laterally spaced apart electrode sets. Each electrode set includes a first electrode interleaved with a second electrode. The support base supports the…

SYSTEM TO DETECT WAFER ARCING IN SEMICONDUCTOR MANUFACTURING EQUIPMENT

Granted: March 16, 2017
Application Number: 20170077002
Methods and systems for accurate arc detection in semiconductor manufacturing tools are disclosed. Such methods and systems provide real-time arc detection and near real-time notification for corrective actions during a semiconductor manufacturing process. Such methods and systems utilize data with high sample rate and wavelet analysis to provide for more accurate arc detection, which leads to more effective and cost efficient semiconductor manufacturing operations.

APPARATUS AND METHOD FOR THIN-FILM PROCESSING APPLICATIONS

Granted: March 9, 2017
Application Number: 20170067149
According to the present disclosure, a flexible substrate coating apparatus is provided. The flexible substrate coating apparatus includes a vacuum process chamber for processing a flexible substrate. The vacuum process chamber includes one or more deposition units and a cleaning unit positioned directly downstream of the one or more deposition units. In another aspect, a method for depositing a thin-film on a flexible substrate is provided. The method for depositing a thin-film on a…

PLASMA ETCHING SYSTEMS AND METHODS WITH SECONDARY PLASMA INJECTION

Granted: March 2, 2017
Application Number: 20170062184
An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and…

METHODS FOR PRODUCING INTERCONNECTS IN SEMICONDUCTOR DEVICES

Granted: February 16, 2017
Application Number: 20170047249
A method for forming metallization in a workpiece includes electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, where the first metallization…

OXIDE ETCH SELECTIVITY SYSTEMS AND METHODS

Granted: February 9, 2017
Application Number: 20170040175
Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing…

GAS-PHASE SILICON OXIDE SELECTIVE ETCH

Granted: February 9, 2017
Application Number: 20170040180
A method of etching silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF is combined with an additional precursor in the substrate processing region. The HF may enter through one channel(s) and the additional precursor may flow through another channel(s) prior to forming the combination. The combination may be formed near the substrate. The silicon oxide etch selectivity relative to silicon nitride from is…

THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS

Granted: February 9, 2017
Application Number: 20170040190
A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that…