Applied Materials Patent Applications

CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT

Granted: August 17, 2017
Application Number: 20170236691
Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

THREE-DIMENSIONAL THIN FILM BATTERY

Granted: August 17, 2017
Application Number: 20170237124
A thin film battery may comprise: a substrate comprising a substrate surface; a first current collector (FCC) layer formed on the substrate surface, the FCC layer having a first FCC surface and a second FCC surface and wherein the first FCC surface is in contact with the substrate and the second FCC surface is a first three-dimensional surface; a first electrode layer deposited on the first current collector, and an electrolyte layer deposited on the first electrode layer; wherein the…

PROCESS CHAMBER FOR DIELECTRIC GAPFILL

Granted: August 10, 2017
Application Number: 20170226637
A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one…

Non-Contact Sheet Resistance Measurement of Barrier and/or Seed Layers Prior to Electroplating

Granted: August 10, 2017
Application Number: 20170226655
A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the holder relative to the workpiece support, the beam source supported on the holder, and a computer programmed to sense a behavior of an electrical parameter sensed by the…

OXIDE ETCH SELECTIVITY SYSTEMS AND METHODS

Granted: August 10, 2017
Application Number: 20170229287
Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing…

SEMICONDUCTOR PROCESSING SYSTEMS HAVING MULTIPLE PLASMA CONFIGURATIONS

Granted: August 10, 2017
Application Number: 20170229289
An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the…

METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY

Granted: August 10, 2017
Application Number: 20170229291
A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a…

SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING IN PLASMA PROCESSING EQUIPMENT

Granted: August 10, 2017
Application Number: 20170229293
A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma…

LOW TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS

Granted: August 10, 2017
Application Number: 20170229326
A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed…

BOLTED WAFER CHUCK THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS

Granted: August 10, 2017
Application Number: 20170229328
A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a…

THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS

Granted: August 10, 2017
Application Number: 20170229329
A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that…

HIGH SPEED EPITAXY SYSTEM AND METHODS

Granted: August 3, 2017
Application Number: 20170221751
A substrate carrier for an epitaxy chamber is described that has an elongated base member supporting two substrate supports in an angled relationship and a center substrate support between the two substrate supports. The center substrate support has one or more openings at which a substrate is positioned for processing, enabling both sides of the substrate to be processed concurrently.

CARRIER FOR SMALL PAD FOR CHEMICAL MECHANICAL POLISHING

Granted: July 20, 2017
Application Number: 20170203405
A chemical mechanical polishing system includes a substrate support configured to hold a substrate during a polishing operation, a polishing pad assembly include a membrane and a polishing pad portion, a polishing pad carrier, and a drive system configured to cause relative motion between the substrate support and the polishing pad carrier. The polishing pad carrier includes a casing having a cavity and an aperture connecting the cavity to an exterior of the casing. The polishing pad…

SOURCE RF POWER SPLIT INNER COIL TO IMPROVE BCD AND ETCH DEPTH PERFORMANCE

Granted: July 13, 2017
Application Number: 20170200585
Embodiments of the present disclosure include a radial frequency plasma source having a split type inner coil assembly. In one embodiment, the split type inner coil assembly comprises two intertwining coils. In another embodiment, the split type inner coil assembly includes looped coils forming a dome.

CO OR NI AND CU INTEGRATION FOR SMALL AND LARGE FEATURES IN INTEGRATED CIRCUITS

Granted: July 13, 2017
Application Number: 20170200642
In one embodiment of the present disclosure, a method for depositing metal in a feature on a workpiece is provided. The method includes electrochemically depositing a second metal layer on a first metal layer on a workpiece having at least two features of two different sizes in a dielectric layer, wherein the second metal layer is a copper layer and wherein the first metal layer includes a metal selected from the group consisting of cobalt and nickel, wherein the first metal layer…

SYSTEMS AND METHODS FOR SHIELDING FEATURES OF A WORKPIECE DURING ELECTROCHEMICAL DEPOSITION

Granted: July 6, 2017
Application Number: 20170191180
In one embodiment, an electroplating cell for depositing a metal onto a surface of a substrate includes an electroplating chamber configured to receive an electrolyte containing metal ions and a substrate having a surface disposed to contact the electrolyte, wherein the surface of the substrate is configured to serve as a cathode and wherein the surface of the substrate includes an anomaly region at or near the outer perimeter of the surface of the substrate, an anode disposed in the…

OXIDE ETCH SELECTIVITY ENHANCEMENT

Granted: June 22, 2017
Application Number: 20170178924
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor or an alcohol. The combination react with the patterned heterogeneous…

EXOTHERMIC POWDERS FOR ADDITIVE MANUFACTURING

Granted: June 15, 2017
Application Number: 20170165865
A method of additive manufacturing to form a component comprises successively depositing a plurality of layers to form the component. Depositing at least one of the plurality of layers includes depositing a layer of a first particulate precursor over a platen, depositing a second particulate precursor on portions of the platen over the layer of the first particulate precursor specified by a controller, and directing energy to the second particulate precursor deposited on the portion of…

ENDPOINT CONTROL OF MULTIPLE SUBSTRATE ZONES OF VARYING THICKNESS IN CHEMICAL MECHANICAL POLISHING

Granted: June 1, 2017
Application Number: 20170151647
A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing…

CORROSION CONTROL FOR CHAMBER COMPONENTS

Granted: June 1, 2017
Application Number: 20170152968
Implementations described herein protect a chamber components from corrosive cleaning gases used at high temperatures. In one embodiment, a chamber component includes at least a bellows that includes a top mounting flange coupled to a bottom mounting flange by a tubular accordion structure. A coating is disposed on an exterior surface of at least the tubular accordion structure. The coating includes of at least one of polytetrafluoroethylene, parylene C, parylene D, diamond-like carbon…