Applied Materials Patent Applications

BRACE STRUCTURES FOR ADDITIVE MANUFACTURING

Granted: January 19, 2017
Application Number: 20170014907
Additive manufacturing of an object includes dispensing a plurality of successive layers of powder over a top surface of a platform, fusing an object region in each of the plurality of successive layers to form the object, and fusing a brace region in a particular layer from the plurality of layers to form a brace structure to inhibit lateral motion of the powder. The brace structure is spaced apart from the particular object region by a gap of unfused powder.

SELECTIVE MATERIAL DISPENSING IN ADDITIVE MANUFACTURING

Granted: January 19, 2017
Application Number: 20170014910
Additive manufacturing includes successively forming a plurality of layers on a support. Depositing a layer from the plurality of layers includes dispensing first particles, selectively dispensing second particles in selected regions corresponding to a surface of the object, and fusing at least a portion of the layer. The layer has the first particles throughout and the second particles in the selected regions. Alternatively or in addition, forming the plurality of layers includes…

PROCESS FOR REMOVING CONTAMINATION ON RUTHENIUM SURFACE

Granted: January 19, 2017
Application Number: 20170017146
A method for pretreating an EUVL photomask having an exposed ruthenium surface includes subjecting the photomask to surface treatment in an oxidizing and reducing environment. Another method for pretreating an EUVL photomask having an exposed ruthenium surface includes subjecting the photomask to surface treatment in an oxidizing and reducing environment, and cleaning the photomask with a cleaning solution.

METAL REMOVAL WITH REDUCED SURFACE ROUGHNESS

Granted: January 19, 2017
Application Number: 20170018439
Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts…

UV-ASSISTED MATERIAL INJECTION INTO POROUS FILMS

Granted: January 19, 2017
Application Number: 20170018455
Methods are described for reducing shrinkage experienced by porous films on a patterned substrate. The film may be a silicon-and-hydrogen-containing layer which further contains one or two of carbon, oxygen and nitrogen. Shortly after deposition, the silicon-and-hydrogen-containing layer is treated by concurrent exposure to a relatively small molecule precursor (e.g. NH3 or C2H2) and a source of UV light. The treatment may reduce subsequent shrinkage experienced by the porous film even…

ADJUSTABLE REMOTE DISSOCIATION

Granted: January 12, 2017
Application Number: 20170011931
Methods of selectively etching an exposed portion of a patterned substrate relative to a second exposed portion are described. The etching process is a gas phase etch which uses an oxidizing precursor unexcited in any plasma prior to combination with plasma effluents formed in a remote plasma from an inert precursor. The plasma effluents may be combined with the oxidizing precursor in a plasma-free remote chamber region and/or in a plasma-free substrate processing region. The combination…

TEXTURED MEMBRANE FOR A MULTI-CHAMBER CARRIER HEAD

Granted: January 5, 2017
Application Number: 20170001282
A flexible membrane for use in a carrier head has a generally circular main portion with a lower surface, an annular outer portion for connection to a base assembly, and an annular flap extending from the main portion on a side opposite the lower surface for connection to the base assembly. At least one surface of the flap has a surface texture to prevent adhesion.

TEMPERATURE CONTROLLED ADDITIVE MANUFACTURING

Granted: December 29, 2016
Application Number: 20160375491
An additive manufacturing system includes a platen having a top surface to support an object being manufactured, a dispenser to deliver a plurality of successive layers of precursor material over the platen, a plurality of lamps disposed below the top surface of the platen to heat the platen, and an energy source to fuse at least some of the outermost layer of precursor material.

MATERIAL DISPENSING AND COMPACTION IN ADDITIVE MANUFACTURING

Granted: December 22, 2016
Application Number: 20160368054
An additive manufacturing apparatus for forming a part includes a support, a first dispenser to deliver a layer of first particles on a support or an underlying layer on the support, a second dispenser to deliver second particles onto the layer of first particles such that the second particles infiltrate into the layer of first particles, an energy source to fuse the first particle and second particles to form a fused layer of the part, and a controller coupled to the first dispenser,…

METHOD FOR FORMING INTERCONNECTS

Granted: December 22, 2016
Application Number: 20160372369
A method of forming an interconnect composed of metallized lines and vias in a workpiece includes forming metal lines in a workpiece, with the metal lines disposed in longitudinally spaced-apart line segments, the line segments spaced apart from each other end-to-end; and forming vias in a workpiece, wherein at least one end of a first formed metal line constrains one cross-sectional dimension of a second formed via, or wherein at least one end of a first formed via constrains one…

Limiting Adjustment of Polishing Rates During Substrate Polishing

Granted: December 22, 2016
Application Number: 20160372388
A method of controlling polishing includes polishing a region of a substrate at a first polishing rate, measuring a sequence of characterizing values for the region of the substrate during polishing with an in-situ monitoring system, determining a polishing rate adjustment for each of a plurality of adjustment times prior to a polishing endpoint time, and adjusting a polishing parameter to polish the substrate at a second polishing rate. The time period is greater than a period between…

PRINTED CHEMICAL MECHANICAL POLISHING PAD HAVING ABRASIVES THEREIN AND SYSTEM FOR PRINTING

Granted: December 8, 2016
Application Number: 20160354901
A method of fabricating a polishing layer of a polishing pad includes determining a desired distribution of particles to be embedded within a polymer matrix of the polishing layer. A plurality of layers of the polymer matrix is successively deposited with a 3D printer, each layer of the plurality of layers of polymer matrix being deposited by ejecting a polymer matrix precursor from a nozzle. A plurality of layers of the particles is successively deposited according to the desired…

METHOD OF FORMING METAL AND METAL ALLOY FEATURES

Granted: December 8, 2016
Application Number: 20160355941
Electric potential, current density, agitation, and deposition rate are controlled to deposit metal alloys, such as tin based solder alloys or magnetic alloys, with minimal variations in the weight ratios of alloying metals at different locations within the deposited metal alloy feature. Alternative embodiments include processes that form metal alloy features wherein the variation in weight ratio of alloying metals within the feature is not necessarily minimized, but is controlled to…

Retaining Ring Having Inner Surfaces with Features

Granted: December 1, 2016
Application Number: 20160346897
Some implementations of a retaining ring has an inner surface having a first portion formed of multiple planar facets and a second portion that adjoins the first portion along a boundary and includes a frustoconical surface that is sloped downwardly from outside in. Some implementations of the retaining ring have a crenellated or serpentine inner surface, and/or an inner surface with alternating region of different surface properties or different tilt angles.

APPARATUS FOR PRINTING A CHEMICAL MECHANICAL POLISHING PAD

Granted: December 1, 2016
Application Number: 20160347002
A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.

POWDERS FOR ADDITIVE MANUFACTURING

Granted: November 24, 2016
Application Number: 20160339517
A precursor for additive manufacturing includes a powder of metallic particulates, each particulate having a metal core having mean diameters between 10 and 150 ?m, the metal core having a first melting temperature; and each of the metal core having a functionalized surface, the functionalized surface includes a metallic material having a second melting point lower than the first melting point.

DEPOSITION OF SILICON AND OXYGEN-CONTAINING FILMS WITHOUT AN OXIDIZER

Granted: November 17, 2016
Application Number: 20160336174
A silicon and oxygen-containing film, such as a silicon dioxide film, is deposited in the absence of an oxidizer by introducing siloxane precursors into a plasma processing chamber and dissociating at least some of the Si—H bonds of the siloxane precursors by, for example, exposing the siloxane precursors to a low energy plasma. The silicon and oxygen-containing film may be formed on an oxidation-prone surface without oxidizing the oxidation-prone surface. The deposited silicon and…

CLEANING HIGH ASPECT RATIO VIAS

Granted: October 27, 2016
Application Number: 20160314961
A method of removing an amorphous silicon/silicon oxide film stack from vias is described. The method may involve a remote plasma comprising fluorine and a local plasma comprising fluorine and a nitrogen-and-hydrogen-containing precursor unexcited in the remote plasma to remove the silicon oxide. The method may then involve a local plasma of inert species to potentially remove any thin carbon layer (leftover from the photoresist) and to treat the amorphous silicon layer in preparation…

GAS-PHASE SILICON NITRIDE SELECTIVE ETCH

Granted: October 20, 2016
Application Number: 20160307771
A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may be combined with one or more of several precursors in the substrate processing region and near the substrate to increase the silicon nitride etch rate and/or the silicon nitride selectivity. The silicon nitride etch selectivity is increased most notably when compared with silicon of various forms. No precursors are excited in any…

ELECTROCHEMICAL CELL WITH SOLID AND LIQUID ELECTROLYTES

Granted: October 20, 2016
Application Number: 20160308243
A hybrid solid state battery may comprise: a metal ion negative half-cell; a metal ion conducting solid state electrolyte separator; and a positive half-cell comprising an electrolyte selected from the group consisting of a liquid electrolyte, a gel electrolyte and a polymer electrolyte; wherein the solid state electrolyte separator is between the metal ion negative half-cell and the electrolyte in the positive half-cell. The solid state battery may be a Li-ion battery, with a Li-ion…