Applied Materials Patent Applications

METHODS FOR PRODUCING INTERCONNECTS IN SEMICONDUCTOR DEVICES

Granted: February 16, 2017
Application Number: 20170047249
A method for forming metallization in a workpiece includes electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, where the first metallization…

OXIDE ETCH SELECTIVITY SYSTEMS AND METHODS

Granted: February 9, 2017
Application Number: 20170040175
Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing…

GAS-PHASE SILICON OXIDE SELECTIVE ETCH

Granted: February 9, 2017
Application Number: 20170040180
A method of etching silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF is combined with an additional precursor in the substrate processing region. The HF may enter through one channel(s) and the additional precursor may flow through another channel(s) prior to forming the combination. The combination may be formed near the substrate. The silicon oxide etch selectivity relative to silicon nitride from is…

THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS

Granted: February 9, 2017
Application Number: 20170040190
A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that…

BOLTED WAFER CHUCK THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS

Granted: February 9, 2017
Application Number: 20170040191
A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a…

INTEGRATED BIT-LINE AIRGAP FORMATION AND GATE STACK POST CLEAN

Granted: February 9, 2017
Application Number: 20170040207
Methods of forming flash memory cells are described which incorporate air gaps for improved performance. The methods are useful for so-called “2-d flat cell” flash architectures. 2-d flat cell flash memory involves a reactive ion etch to dig trenches into multi-layers containing high work function and other metal layers. The methods described herein remove the metal oxide debris from the sidewalls of the multi-layer trench and then, without breaking vacuum, selectively remove shallow…

EXOTHERMIC POWDERS FOR ADDITIVE MANUFACTURING

Granted: January 26, 2017
Application Number: 20170021526
A method of additive manufacturing to form a component comprises successively depositing a plurality of layers to form the component. Depositing at least one of the plurality of layers includes depositing a layer of a first particulate precursor over a platen, depositing a second particulate precursor on portions of the platen over the layer of the first particulate precursor specified by a controller, and directing energy to the second particulate precursor deposited on the portion of…

BRACE STRUCTURES FOR ADDITIVE MANUFACTURING

Granted: January 19, 2017
Application Number: 20170014907
Additive manufacturing of an object includes dispensing a plurality of successive layers of powder over a top surface of a platform, fusing an object region in each of the plurality of successive layers to form the object, and fusing a brace region in a particular layer from the plurality of layers to form a brace structure to inhibit lateral motion of the powder. The brace structure is spaced apart from the particular object region by a gap of unfused powder.

SELECTIVE MATERIAL DISPENSING IN ADDITIVE MANUFACTURING

Granted: January 19, 2017
Application Number: 20170014910
Additive manufacturing includes successively forming a plurality of layers on a support. Depositing a layer from the plurality of layers includes dispensing first particles, selectively dispensing second particles in selected regions corresponding to a surface of the object, and fusing at least a portion of the layer. The layer has the first particles throughout and the second particles in the selected regions. Alternatively or in addition, forming the plurality of layers includes…

PROCESS FOR REMOVING CONTAMINATION ON RUTHENIUM SURFACE

Granted: January 19, 2017
Application Number: 20170017146
A method for pretreating an EUVL photomask having an exposed ruthenium surface includes subjecting the photomask to surface treatment in an oxidizing and reducing environment. Another method for pretreating an EUVL photomask having an exposed ruthenium surface includes subjecting the photomask to surface treatment in an oxidizing and reducing environment, and cleaning the photomask with a cleaning solution.

METAL REMOVAL WITH REDUCED SURFACE ROUGHNESS

Granted: January 19, 2017
Application Number: 20170018439
Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts…

UV-ASSISTED MATERIAL INJECTION INTO POROUS FILMS

Granted: January 19, 2017
Application Number: 20170018455
Methods are described for reducing shrinkage experienced by porous films on a patterned substrate. The film may be a silicon-and-hydrogen-containing layer which further contains one or two of carbon, oxygen and nitrogen. Shortly after deposition, the silicon-and-hydrogen-containing layer is treated by concurrent exposure to a relatively small molecule precursor (e.g. NH3 or C2H2) and a source of UV light. The treatment may reduce subsequent shrinkage experienced by the porous film even…

ADJUSTABLE REMOTE DISSOCIATION

Granted: January 12, 2017
Application Number: 20170011931
Methods of selectively etching an exposed portion of a patterned substrate relative to a second exposed portion are described. The etching process is a gas phase etch which uses an oxidizing precursor unexcited in any plasma prior to combination with plasma effluents formed in a remote plasma from an inert precursor. The plasma effluents may be combined with the oxidizing precursor in a plasma-free remote chamber region and/or in a plasma-free substrate processing region. The combination…

TEXTURED MEMBRANE FOR A MULTI-CHAMBER CARRIER HEAD

Granted: January 5, 2017
Application Number: 20170001282
A flexible membrane for use in a carrier head has a generally circular main portion with a lower surface, an annular outer portion for connection to a base assembly, and an annular flap extending from the main portion on a side opposite the lower surface for connection to the base assembly. At least one surface of the flap has a surface texture to prevent adhesion.

TEMPERATURE CONTROLLED ADDITIVE MANUFACTURING

Granted: December 29, 2016
Application Number: 20160375491
An additive manufacturing system includes a platen having a top surface to support an object being manufactured, a dispenser to deliver a plurality of successive layers of precursor material over the platen, a plurality of lamps disposed below the top surface of the platen to heat the platen, and an energy source to fuse at least some of the outermost layer of precursor material.

MATERIAL DISPENSING AND COMPACTION IN ADDITIVE MANUFACTURING

Granted: December 22, 2016
Application Number: 20160368054
An additive manufacturing apparatus for forming a part includes a support, a first dispenser to deliver a layer of first particles on a support or an underlying layer on the support, a second dispenser to deliver second particles onto the layer of first particles such that the second particles infiltrate into the layer of first particles, an energy source to fuse the first particle and second particles to form a fused layer of the part, and a controller coupled to the first dispenser,…

METHOD FOR FORMING INTERCONNECTS

Granted: December 22, 2016
Application Number: 20160372369
A method of forming an interconnect composed of metallized lines and vias in a workpiece includes forming metal lines in a workpiece, with the metal lines disposed in longitudinally spaced-apart line segments, the line segments spaced apart from each other end-to-end; and forming vias in a workpiece, wherein at least one end of a first formed metal line constrains one cross-sectional dimension of a second formed via, or wherein at least one end of a first formed via constrains one…

Limiting Adjustment of Polishing Rates During Substrate Polishing

Granted: December 22, 2016
Application Number: 20160372388
A method of controlling polishing includes polishing a region of a substrate at a first polishing rate, measuring a sequence of characterizing values for the region of the substrate during polishing with an in-situ monitoring system, determining a polishing rate adjustment for each of a plurality of adjustment times prior to a polishing endpoint time, and adjusting a polishing parameter to polish the substrate at a second polishing rate. The time period is greater than a period between…

PRINTED CHEMICAL MECHANICAL POLISHING PAD HAVING ABRASIVES THEREIN AND SYSTEM FOR PRINTING

Granted: December 8, 2016
Application Number: 20160354901
A method of fabricating a polishing layer of a polishing pad includes determining a desired distribution of particles to be embedded within a polymer matrix of the polishing layer. A plurality of layers of the polymer matrix is successively deposited with a 3D printer, each layer of the plurality of layers of polymer matrix being deposited by ejecting a polymer matrix precursor from a nozzle. A plurality of layers of the particles is successively deposited according to the desired…

METHOD OF FORMING METAL AND METAL ALLOY FEATURES

Granted: December 8, 2016
Application Number: 20160355941
Electric potential, current density, agitation, and deposition rate are controlled to deposit metal alloys, such as tin based solder alloys or magnetic alloys, with minimal variations in the weight ratios of alloying metals at different locations within the deposited metal alloy feature. Alternative embodiments include processes that form metal alloy features wherein the variation in weight ratio of alloying metals within the feature is not necessarily minimized, but is controlled to…