Applied Materials Patent Grants

Atomic layer deposition carousel with continuous rotation and methods of use

Granted: April 25, 2017
Patent Number: 9631277
Provided are atomic layer deposition apparatus and methods including a rotating wheel with a plurality of substrate carriers for continuous processing of substrates. The processing chamber may have a loading station on the front end which is configured with one or more robots to load and unload substrates from the substrate carriers without needing to stop the rotating wheel.

Metal silicide formation through an intermediate metal halogen compound

Granted: April 25, 2017
Patent Number: 9631278
Methods for depositing or forming a metal silicide layer are disclosed. A metal halide layer is deposited, cleaned by a halogen and subjected to a siliciding agent to form the metal silicide.

Non-contact sheet resistance measurement of barrier and/or seed layers prior to electroplating

Granted: April 25, 2017
Patent Number: 9631919
A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the holder relative to the workpiece support, the beam source supported on the holder, and a computer programmed to sense a behavior of an electrical parameter sensed by the…

Imaging bottom of high aspect ratio holes

Granted: April 25, 2017
Patent Number: 9632044
A method that includes performing multiple test iterations to provide multiple test results; and processing the multiple test results to provide estimates of a conductivity of each of the multiple bottoms segments. The multiple test iterations includes repeating, for each bottom segment of the multiple bottom segments, the steps of: (a) illuminating the bottom segment by a charging electron beam; wherein electrons emitted from the bottom segment due to the illuminating are prevented from…

Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor

Granted: April 25, 2017
Patent Number: 9632411
A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited…

Target for PVD sputtering system

Granted: April 25, 2017
Patent Number: 9633824
Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first…

Methods for depositing dielectric films via physical vapor deposition processes

Granted: April 25, 2017
Patent Number: 9633839
In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first…

Cu/barrier interface enhancement

Granted: April 25, 2017
Patent Number: 9633861
Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is…

Substrate support with integrated vacuum and edge purge conduits

Granted: April 25, 2017
Patent Number: 9633889
Substrate supports are provided herein, In some embodiments, a substrate support includes a first plate; a plurality of vacuum passages disposed through the first plate; a plurality of vertical passages formed partially into the first plate; a plurality of horizontal passages disposed in the first plate, each of the plurality of horizontal passages beginning proximate a perimeter of the first plate and terminating proximate one of the plurality of vertical passages such that the…

SiON gradient concept

Granted: April 25, 2017
Patent Number: 9634039
Embodiments of the present disclosure generally relate to methods and devices for use of low temperature polysilicon (LTPS) thin film transistors in liquid crystal display (LCD) and organic light-emitting diode (OLED) displays.

Laminated thin film battery

Granted: April 25, 2017
Patent Number: 9634334
Disclosed is a laminated thin film battery which is capable of exhibiting a high capacity and does not require a separate barrier to be formed on a surface after lamination. A first thin film battery and a second thin film battery, in which cathode current collectors and anode current collectors are formed on first surfaces, are laminated in such a type that the respective first surfaces face each other. The cathode current collectors of the first thin film battery and the second thin…

Susceptor assembly

Granted: April 18, 2017
Patent Number: D784276

Deposition of metal doped amorphous carbon film

Granted: April 18, 2017
Patent Number: 9624577
Embodiments of the present disclosure relate to a metal-doped amorphous carbon hardmask for etching the underlying layer, layer stack, or structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, reacting the carbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped carbon layer over a…

Anodization architecture for electro-plate adhesion

Granted: April 18, 2017
Patent Number: 9624593
To manufacture a chamber component for a processing chamber a first anodization layer is formed on a metallic article with impurities, the first anodization layer having a thickness greater than about 100 nm, and an aluminum coating is formed on the first anodization layer, the aluminum coating being substantially free from impurities. A second anodization layer can be formed on the aluminum coating.

Methods and apparatus for in-situ cleaning of a process chamber

Granted: April 18, 2017
Patent Number: 9627185
Methods and apparatus for in-situ cleaning of substrate processing chambers are provided herein. A substrate processing chamber may include a chamber body enclosing an inner volume; a chamber lid removably coupled to the chamber body and including a first flow channel fluidly coupled to the inner volume to selectively open or seal the inner volume to or from a first outlet; a chamber floor including a second flow channel fluidly coupled to the inner volume to selectively open or seal the…

Tape assisted single step peel-off on sin layer above metal electrodes

Granted: April 18, 2017
Patent Number: 9627211
Methods for processing a substrate are described herein. A method for removing a layer from a substrate, can include positioning a substrate within a processing chamber, wherein the substrate can include an upper surface, and one or more metal features with a separation energy formed on the upper surface; forming a layer over the one or more metal features and the exposed portion of the upper surface; focusing a source of transmissive radiant energy at the layer; pulsing transmissive…

Method for forming features in a silicon containing layer

Granted: April 18, 2017
Patent Number: 9627216
Embodiments of methods for forming features in a silicon containing layer of a substrate disposed on a substrate support are provided herein. In some embodiments, a method for forming features in a silicon containing layer of a substrate disposed on a substrate support in a processing volume of a process chamber includes: exposing the substrate to a first plasma formed from a first process gas while providing a bias power to the substrate support, wherein the first process gas comprises…

Methods for bonding substrates

Granted: April 18, 2017
Patent Number: 9627231
Methods for bonding substrates, forming assemblies using the same, along with improved methods for refurbishing said assemblies are disclosed that take advantage of at least one channel formed in an adhesive utilized to join two substrates to improve fabrication, performance and refurbishment of the assemblies. In one embodiment an assembly includes a first substrate secured to a second substrate by an adhesive layer. The assembly includes a channel having at least one side bounded by…

Apparatus and methods for injector to substrate gap control

Granted: April 11, 2017
Patent Number: 9617640
Described are apparatus and methods for processing a semiconductor wafer in which the gap between the wafer surface and the gas distribution assembly remains uniform and of known thickness. The wafer is positioned within a susceptor assembly and the assembly is lifted toward the gas distribution assembly using actuators. The wafer can be lifted toward the gas distribution assembly by creating a fluid bearing below and/or above the wafer.

Electrostatic chuck with external flow adjustments for improved temperature distribution

Granted: April 11, 2017
Patent Number: 9622375
An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the…