Applied Materials Patent Grants

Selective titanium nitride removal

Granted: March 28, 2017
Patent Number: 9607856
Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents…

Limiting adjustment of polishing rates during substrate polishing

Granted: March 28, 2017
Patent Number: 9607910
A method of controlling polishing includes polishing a region of a substrate at a first polishing rate, measuring a sequence of characterizing values for the region of the substrate during polishing with an in-situ monitoring system, determining a polishing rate adjustment for each of a plurality of adjustment times prior to a polishing endpoint time, and adjusting a polishing parameter to polish the substrate at a second polishing rate. The time period is greater than a period between…

Self-limiting chemical vapor deposition and atomic layer deposition methods

Granted: March 28, 2017
Patent Number: 9607920
Methods for depositing silicon on a semiconductor or metallic surface include cycling dosing of silane and chlorosilane precursors at a temperature between 50° C. and 300° C., and continuing cycling between three and twenty three cycles until the deposition self-limits via termination of surface sites with Si—H groups. Methods of layer formation include depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of…

Electrostatic chuck

Granted: March 28, 2017
Patent Number: 9608549
Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for retaining a substrate includes a base plate, a ceramic plate, supported by the base plate, having a substrate supporting surface, a first plurality of electrodes disposed within the ceramic plate having a first polarity, and a second plurality of electrodes disposed within the ceramic plate having a second polarity opposite from the first polarity, wherein the first and second…

Innovative top-coat approach for advanced device on-wafer particle performance

Granted: March 28, 2017
Patent Number: 9604249
To manufacture a coating for an article for a semiconductor processing chamber, the coating is applied to the article by a method including applying a sol-gel coating of Y2O3 over the article, and curing the sol-gel coating on the article by heating the article with the sol-gel coating and exposing the article with the sol-gel coating to plasma in a semiconductor manufacturing chamber.

Physical vapor deposition RF plasma shield deposit control

Granted: March 28, 2017
Patent Number: 9605341
Methods and apparatus for processing a substrate in a physical vapor deposition (PVD) chamber are provided herein. In some embodiments, a process kit shield used in a substrate processing chamber may include a shield body having an inner surface and an outer surface, a process kit shield impedance match device coupled between the shield body and ground, wherein the process kit shield impedance match device is configured to adjust a bias voltage of the process kit shield, a cavity formed…

Matching process controllers for improved matching of process

Granted: March 28, 2017
Patent Number: 9606519
Described herein are methods and systems for chamber matching in a manufacturing facility. A method may include receiving a first chamber recipe advice for a first chamber and a second chamber recipe advice for a second chamber. The chamber recipe advices describe a set of tunable inputs and a set of outputs for a process. The method may further include adjusting at least one of the set of first chamber input parameters or the set of second chamber input parameters and at least one of…

Classifier readiness and maintenance in automatic defect classification

Granted: March 28, 2017
Patent Number: 9607233
A method for classification includes receiving inspection data associated with a plurality of defects found in one or more samples and receiving one or more benchmark classification comprising a class for each of the plurality of defects. A readiness criterion for one or more of the classes is evaluated based on the one or more benchmark classification results, wherein the readiness criterion comprises for each class, a suitability of the inspection data for training an automatic defect…

Methods and apparatus for treating exhaust gas in a processing system

Granted: March 21, 2017
Patent Number: 9597634
Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a substrate processing system includes a plasma source coupled to a foreline of a process chamber, a reagent source coupled to the foreline upstream of the plasma source, and a foreline gas injection kit coupled to the foreline to controllably deliver a gas to the foreline, wherein the foreline…

Electrostatic chuck and showerhead with enhanced thermal properties and methods of making thereof

Granted: March 21, 2017
Patent Number: 9597734
Embodiments of the present disclosure generally provide chamber components with enhanced thermal properties and methods of enhancing thermal properties of chamber components including bonding materials. One embodiment of the present disclosure provides a method for fabricating a composite structure. The method includes applying a bonding material to a first component, and converting the bonding material applied to the first component to an enhanced bonding layer by heating the bonding…

Electroplating apparatus with contact ring deplating

Granted: March 21, 2017
Patent Number: 9598788
An electroplating apparatus has a rotor in a head, with a contact ring on the rotor. A lift/rotate actuator may move the head to position a sector of the contact ring into a deplate channel of a deplating station. Electrical current and a deplate liquid are applied directly onto the contacts of the contact ring, from a position radially inward of the contacts. Electrical current and a deplate liquid may also be separately applied onto the back side of the ring contact, from a position…

System, a method and a computer program product for CAD-based registration

Granted: March 21, 2017
Patent Number: 9599575
A system for generating calibration information usable for wafer inspection, the system including: (I) a displacement analysis module, configured to: (a) calculate a displacement for each target out of multiple targets selected in multiple scanned frames which are included in a scanned area of the wafer, the calculating based on a correlation of: (i) an image associated with the respective target which was obtained during a scanning of the wafer, and (ii) design data corresponding to the…

Non-intrusive measurement of a wafer DC self-bias in semiconductor processing equipment

Granted: March 21, 2017
Patent Number: 9601301
A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.

Methods for depositing fluorine/carbon-free conformal tungsten

Granted: March 21, 2017
Patent Number: 9601339
Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

UV-cure pre-treatment of carrier film for wafer dicing using hybrid laser scribing and plasma etch approach

Granted: March 21, 2017
Patent Number: 9601375
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side of the semiconductor wafer includes adhering a back side the semiconductor wafer on the dicing tape of a substrate carrier. Subsequent to adhering the semiconductor wafer on a dicing tape, the dicing tape is treated with a UV-cure process. Subsequent to treating the…

3D NAND staircase CD control by using interferometric endpoint detection

Granted: March 21, 2017
Patent Number: 9601396
Embodiments of the present disclosure provide methods for forming stair-like structures in manufacturing three dimensional (3D) stacking of semiconductor chips. In one example, a method includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, performing an etching process to etch a portion of the film stack exposed by the trimmed patterned photoresist layer, directing…

Dielectric/metal barrier integration to prevent copper diffusion

Granted: March 21, 2017
Patent Number: 9601431
An interconnect structure for use in semiconductor devices and a method for fabricating the same is described. The method includes positioning a substrate in a vacuum processing chamber. The substrate has an exposed copper surface and an exposed low-k dielectric surface. A metal layer is formed over the copper surface but not over the low-k dielectric surface. A metal-based dielectric layer is formed over the metal layer and the low-k dielectric layer.

Gas line weldment design and process for CVD aluminum

Granted: March 14, 2017
Patent Number: 9593417
A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.

Wafer rotation in a semiconductor chamber

Granted: March 14, 2017
Patent Number: 9593419
A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process…

Particle generation suppressor by DC bias modulation

Granted: March 14, 2017
Patent Number: 9593421
Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical…