Applied Materials Patent Grants

Porous three dimensional copper, tin, copper-tin, copper-tin-cobalt, and copper-tin-cobalt-titanium electrodes for batteries and ultra capacitors

Granted: February 14, 2017
Patent Number: 9567683
A method and apparatus for forming a reliable and cost efficient battery or electrochemical capacitor electrode structure that has an improved lifetime, lower production costs, and improved process performance are provided. In one embodiment a method for forming a three dimensional porous electrode for a battery or an electrochemical cell is provided. The method comprises depositing a columnar metal layer over a substrate at a first current density by a diffusion limited deposition…

Heated showerhead assembly

Granted: February 14, 2017
Patent Number: 9570275
The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may…

Flowable film curing penetration depth improvement and stress tuning

Granted: February 14, 2017
Patent Number: 9570287
Methods for depositing and curing a flowable dielectric layer are disclosed herein. Methods can include forming a flowable dielectric layer, immersing the flowable dielectric layer in an oxygen-containing gas, purging the chamber and curing the layer with UV radiation. By curing the layer after an oxygen-containing gas pre-soak, the layer can be more completely cured during the UV irradiation.

Conformal amorphous carbon for spacer and spacer protection applications

Granted: February 14, 2017
Patent Number: 9570303
A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned…

Methods of doping substrates with ALD

Granted: February 14, 2017
Patent Number: 9570307
Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the…

Substrate support for use with multi-zonal heating sources

Granted: February 14, 2017
Patent Number: 9570328
Apparatus for use with multi-zonal heating sources are provided. In some embodiments, a substrate support may have a pocket disposed in a surface of the substrate support and a lip disposed about the pocket to receive an edge of a substrate and to support the substrate over the pocket such that a gap is defined between a pocket surface and a backside surface of the substrate when the substrate is disposed on the lip; a plurality of features to operate in combination with a plurality of…

Cobalt resistance recovery by hydrogen anneal

Granted: February 14, 2017
Patent Number: 9570345
Resistance increase in Cobalt interconnects due to nitridation occurring during removal of surface oxide from Cobalt interconnects and deposition of Nitrogen-containing film on Cobalt interconnects is solved by a Hydrogen thermal anneal or plasma treatment. Removal of the Nitrogen is through a thin overlying layer which may be a dielectric barrier layer or an etch stop layer.

Gas-phase silicon oxide selective etch

Granted: February 7, 2017
Patent Number: 9564341
A method of etching silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF is combined with an additional precursor in the substrate processing region. The HF may enter through one channel(s) and the additional precursor may flow through another channel(s) prior to forming the combination. The combination may be formed near the substrate. The silicon oxide etch selectivity relative to silicon nitride from is…

Shutter blade and robot blade with CTE compensation

Granted: February 7, 2017
Patent Number: 9564348
Processing chamber shutter blade and robot blade assemblies are constructed to eliminate thermal effects on the placement of elements in processing chambers. Such blade assemblies may contain at least two parts, which may include a positioning member including a low CTE material and a thermal compensating member including a high CTE material. The positioning member includes a coupling point and a reference point on a reference axis separated by a first distance. The thermal compensating…

Rapid thermal processing chamber with micro-positioning system

Granted: February 7, 2017
Patent Number: 9564349
Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.

Peak-based endpointing for chemical mechanical polishing

Granted: February 7, 2017
Patent Number: 9564377
A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the…

Method of forming magnetic tunneling junctions

Granted: February 7, 2017
Patent Number: 9564582
A method for fabricating an MRAM bit that includes depositing a spacer layer that protects the tunneling barrier layer during processing is disclosed. The deposited spacer layer prevents byproducts formed in later processing from redepositing on the tunneling barrier layer. Such redeposition may lead to product failure and decreased manufacturing yield. The method further includes non-corrosive processing conditions that prevent damage to the layers of MRAM bits. The non-corrosive…

System and method of encoding content and an image

Granted: February 7, 2017
Patent Number: 9563926
A method of verifying the identity of a user at an authentication server that includes receiving user data relating to a signature gesture entered by a user at a computing device, the user data having a plurality of sample points, verifying the user data at the authentication server by comparing to reference signature data, encoding a verification message within a digital image, and notifying the user that their identity has been verified on the basis of the user data received from the…

Radial waveguide systems and methods for post-match control of microwaves

Granted: February 7, 2017
Patent Number: 9564296
A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system…

Electron beam plasma source with remote radical source

Granted: February 7, 2017
Patent Number: 9564297
In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Silicon-selective removal

Granted: February 7, 2017
Patent Number: 9564338
A method of etching exposed silicon on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a hydrogen-containing precursor. The combination reacts with the patterned heterogeneous structures to remove an exposed silicon portion…

Yttria-based material coated chemical vapor deposition chamber heater

Granted: January 31, 2017
Patent Number: 9556507
Embodiments of the present invention generally relate to heated substrate supports having a protective coating thereon. The protective coating is formed from yttrium oxide at a molar concentration ranging from about 50 mole percent to about 75 mole percent; zirconium oxide at a molar concentration ranging from about 10 mole percent to about 30 mole percent; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium…

Ambient laminar gas flow distribution in laser processing systems

Granted: January 31, 2017
Patent Number: 9557111
A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has an annealing energy source and a substrate support, with a shield member disposed between the annealing energy source and the substrate support. The shield member is a substantially flat member having a dimension larger than a substrate processed on the substrate support, with a window covering a central opening in the substantially flat member. The central opening has a gas inlet portal and a…

Method, system, and computer program product for detection of defects based on multiple references

Granted: January 31, 2017
Patent Number: 9558548
A system includes a memory and a processor device operatively coupled to the memory to obtain an inspected noise-indicative value representative of an analyzed pixel of an inspected image of an inspected object, and a reference noise-indicative value representative for each of multiple reference pixels of the inspected image. The processor device computes a representative noise-indicative value based on the inspected noise-indicative value and multiple reference noise-indicative values,…

Control systems employing deflection sensors to control clamping forces applied by electrostatic chucks, and related methods

Granted: January 31, 2017
Patent Number: 9558981
A control system that includes deflection sensors which can control clamping forces applied by electrostatic chucks, and related methods are disclosed. By using a sensor to determine a deflection of a workpiece supported by an electrostatic chuck, a control system may use the deflection measured to control a clamping force applied to the workpiece by the electrostatic chuck. The control system applies a clamping voltage to the electrostatic chuck so that the clamping force reaches and…