Showerhead for providing multiple materials to a process chamber
Granted: April 30, 2024
Patent Number:
11970775
Embodiments of a showerhead are described herein. In some embodiments, a showerhead assembly includes: a first gas delivery portion having a first body, a first inlet, and a plurality of first tubes extending from the first body and defining a first plenum, wherein each tube of the plurality of first tubes includes a plurality of first holes; and a second gas delivery portion having a second body, a second inlet, and a plurality of second tubes extending from the second body and defining…
Light-emitting diode display devices with mirror
Granted: April 30, 2024
Patent Number:
11974457
An organic light-emitting diode (OLED) device includes a substrate, a well structure on the substrate with the well structure having a recess with side walls and a floor, a lower metal layer covering the floor and side-walls of the well, an upper conductive layer on the lower metal layer covering the floor of the well and contacting the lower metal layer, the upper conductive layer having outer edges at about an intersection of the side walls and the floor, a dielectric layer formed of…
Replacement channel process for three-dimensional dynamic random access memory
Granted: April 30, 2024
Patent Number:
11974423
Examples herein relate to three-dimensional (3D) dynamic random access memory (DRAM) devices and replacement channel processes for fabricating 3D DRAM devices. In an example, a gate dielectric layer is formed on a sacrificial material, and a gate electrode is formed on the gate dielectric layer. After the gate electrode is formed, the sacrificial material is removed and replaced by a semiconductor material. A channel region of a device (e.g., a transistor) that includes the gate…
Nanotwin copper materials in semiconductor devices
Granted: April 30, 2024
Patent Number:
11973034
Exemplary methods of electroplating a metal with a nanotwin crystal structure are described. The methods may include plating a metal material into at least one opening on a patterned substrate, where at least a portion of the metal material is characterized by a nanotwin crystal structure. The methods may further include polishing an exposed surface of the metal material in the opening to reduce an average surface roughness of the exposed surface to less than or about 1 nm. The polished…
System and method to evaporate an OLED layer stack in a vertical orientation
Granted: April 30, 2024
Patent Number:
11972964
A vacuum orientation module for a substrate processing system is described. The module includes at least a first vacuum orientation chamber, comprising: a vacuum chamber; a first transportation track within the vacuum chamber, the first transportation track having a first support structure and a first driving structure and defining a transportation direction; an orientation actuator to change the substrate orientation between a non-vertical orientation and a non-horizontal orientation,…
Methods and apparatus for depositing dielectric material
Granted: April 30, 2024
Patent Number:
11972943
Methods and apparatus for depositing a dielectric material include: providing a first gas mixture into a processing chamber having a substrate disposed therein; forming a first remote plasma comprising first radicals in a remote plasma source and delivering the first radicals to an interior processing region in the processing chamber to form a layer of dielectric material in an opening in a material layer disposed on the substrate in a presence of the first gas mixture and the first…
Area selective carbon-based film deposition
Granted: April 30, 2024
Patent Number:
11972940
Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial…
Cylindrical cavity with impedance shifting by irises in a power-supplying waveguide
Granted: April 30, 2024
Patent Number:
11972930
A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture…
Pulsed voltage source for plasma processing applications
Granted: April 30, 2024
Patent Number:
11972924
Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source…
Deposition of low-k films
Granted: April 30, 2024
Patent Number:
11970777
Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant…
Filtering during in-situ monitoring of polishing
Granted: April 30, 2024
Patent Number:
11969855
A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ monitoring system, filtering a signal from the monitoring system to generate a filtered signal, and determining at least one of a polishing endpoint or an adjustment for a polishing rate from the filtered signal. The filtering includes modelling a plurality of periodic disturbances at a plurality of different frequencies using a plurality of disturbance states,…
Control of processing parameters during substrate polishing using expected future parameter changes
Granted: April 30, 2024
Patent Number:
11969854
Controlling a polishing system includes receiving from an in-situ monitoring system, for each region of a plurality of regions on a substrate being processed by the polishing system, a sequence of characterizing values for the region. For each region, a polishing rate is determined for the region, and an adjustment is calculated for at least one processing parameter. For each of a plurality of parameter update times, an adjustment is calculated for at least one processing parameter,…
Deposition of reactive metals with protection layer for high volume manufacturing
Granted: April 30, 2024
Patent Number:
11969781
A method and apparatus for manufacturing a flexible layer stack, and to a flexible layer stack. Implementations of the present disclosure particularly relate to a method and apparatus for coating flexible substrates with a low melting temperature metal or metal alloy. In one implementation, a method is provided. The method includes delivering a transfer liquid to a quenching surface of a rotating casting drum. The method further includes forming a material layer stack over the rotating…
Chamber inlet
Granted: April 23, 2024
Patent Number:
D1023987
Polarizer-free LED displays
Granted: April 23, 2024
Patent Number:
11968856
Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption…
3D NAND gate stack reinforcement
Granted: April 23, 2024
Patent Number:
11967524
Exemplary methods of forming a semiconductor structure may include forming a first silicon oxide layer overlying a semiconductor substrate. The methods may include forming a first silicon layer overlying the first silicon oxide layer. The methods may include forming a silicon nitride layer overlying the first silicon layer. The methods may include forming a second silicon layer overlying the silicon nitride layer. The methods may include forming a second silicon oxide layer overlying the…
Substrate support for chucking of mask for deposition processes
Granted: April 23, 2024
Patent Number:
11967516
Embodiments of the disclosure include methods and apparatus for electrostatically coupling a mask to a substrate support in a deposition chamber. In one embodiment, a substrate support is disclosed that includes a substrate receiving surface, a recessed portion disposed about a periphery of the substrate receiving surface, an electrostatic chuck disposed below the substrate receiving surface, and a plurality of compressible buttons disposed within a respective opening formed in the…
Laser dicing system for filamenting and singulating optical devices
Granted: April 23, 2024
Patent Number:
11964343
A process of producing optical devices is provided including transferring a first substrate comprising one or more devices to a laser dicing tool, the laser dicing tool including a filamentation stage and a singulation stage. One or more device contours are created on the first substrate in the filamentation stage. The optical devices are singulated from the first substrate along the one or more device contours in the singulation stage. The devices are transferred to storage or for…
Atomic oxygen and ozone cleaning device having a temperature control apparatus
Granted: April 23, 2024
Patent Number:
11964068
Embodiments of the present disclosure relate to an oxygen cleaning chamber with UV radiation generator temperature control and a method of atomic oxygen cleaning a substrate. The atomic oxygen cleaning chamber includes a process chamber and a cooling chamber coupled to the process chamber and a divider sealingly separating the process chamber from the cooling chamber. An ultraviolet (UV) radiation generator is disposed in the cooling chamber and provides UV radiation through the divider…
Collimator for a physical vapor deposition (PVD) chamber
Granted: April 23, 2024
Patent Number:
D1024149
