Fairchild Semiconductor Patent Grants

Combo ID detection

Granted: February 14, 2017
Patent Number: 9569388
This document discusses, among other things, an identification (ID) detection module configured to identify a first ID code in a first detect period within a first attach period and to identify a second ID code in a second detect period within the first attach period.

Ignition control circuit with dual (two-stage) clamp

Granted: January 31, 2017
Patent Number: 9559498
In a general aspect, an apparatus can include an insulated gate bipolar transistor (IGBT) device configured to control charging and discharging of an ignition coil and a two-stage voltage clamp coupled with the IGBT device. The two-stage voltage clamp can include a high-voltage portion coupled with the IGBT device and a low-voltage portion coupled with high-voltage portion and the IGBT device. The apparatus can further include a sense device coupled with the two-stage voltage clamp and a…

Circuit and method for overcurrent detection of power switch

Granted: January 24, 2017
Patent Number: 9551742
An overcurrent detection circuit for a power switch comprises a sampling circuit and a comparing circuit. The sampling circuit is configured to perform current sampling on the power switch using a sampling Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and an amplifier, convert a sample current into a sample voltage and transmit the sample voltage to the comparing circuit, and clamp operating voltages of the comparing circuit and of an output circuit of the amplifier by a…

Apparatus and method for operating and switching a single conductor interface

Granted: January 24, 2017
Patent Number: 9552317
This application discusses, among other things, communication apparatus and methods, and more particularly, a single conductor or single wire communication scheme. In an example, a method for communicating between a master device and a slave device using a first single conductor can include transmitting a first ping on the first single conductor using a master device, the first single conductor configured to couple the master device to a slave device, receiving a slave ping on the first…

System for battery management and protection

Granted: January 17, 2017
Patent Number: 9548604
The present disclosure is directed to a system for battery management and protection. A battery protection circuit may include a power semiconductor switch and a control integrated circuit (IC). The battery protection circuit may be configured to regulate the charging and/or discharging of a battery and further prevent the battery from operating outside of a safe operating area based on a protection trip point (e.g. overcurrent detection point) of the protection IC. The protection IC may…

Packaged semiconductor devices and methods of manufacturing

Granted: January 3, 2017
Patent Number: 9536800
In one general aspect, a package can include a semiconductor die having a first terminal on a first side of the semiconductor die and a second terminal on a second side of the semiconductor die, a leadframe portion electrically coupled to the second terminal of the semiconductor die, and a molding compound. The first terminal on the first side of the semiconductor die, a first surface of the leadframe portion, and a first surface of the molding compound can define at least a portion of a…

Reduction of degradation due to hot carrier injection

Granted: January 3, 2017
Patent Number: 9537001
In a general aspect, a high-voltage metal-oxide-semiconductor (HVMOS) device can include comprising a first gate dielectric layer disposed on a channel region of the HVMOS device and a second gate dielectric layer disposed on at least a portion of a drift region of the HVMOS device. The drift region can be disposed laterally adjacent to the channel region. The second gate dielectric layer can have a thickness that is greater than a thickness of the first gate dielectric layer.

DC voltage error protection circuit

Granted: January 3, 2017
Patent Number: 9538287
This document discusses among other things apparatus and methods for protecting circuit elements from harmful voltages. In an example, an apparatus can include an amplifier configured to receive an input signal and to provide an estimate of a first output signal, a peak detector to receive the estimate and to generate a comparison signal that is active when the amplified input signal exceeds a threshold value, and a timer configured to activate a second output signal if the comparison…

Ground fault circuit interrupter (GFCI) monitor

Granted: December 20, 2016
Patent Number: 9525282
This document discusses, among other things, a self-test (ST) ground fault circuit interrupter (GFCI) monitor configured to generate a simulated ground fault starting in a first half-cycle of a first cycle of AC power and extending into a second half-cycle of the first cycle of AC power, wherein the first half-cycle of the first cycle of AC power precedes the second half-cycle of the first cycle of AC power. Further, the ST GFCI monitor can detect a response to the simulated ground…

Audio jack system

Granted: December 13, 2016
Patent Number: 9519602
This application discusses a system that can include a master device and a slave device coupled to the master device via an audio jack connector. In an example, the master device and the slave device can be configured to exchange information via a single conductive path of the audio jack connector using a digital communication protocol. The single conductive path can be configured to conduct audio signals of an audio transducer and the slave device can include a depletion-mode transistor…

Silicon carbide bipolar junction transistor including shielding regions

Granted: December 6, 2016
Patent Number: 9515176
A silicon carbide (SiC) bipolar junction transistor (BJT) and a method of manufacturing such a SiC BJT is provided. The SiC BJT can include a collector region having a first conductivity type, a base region having a second conductivity type opposite the first conductivity type, and an emitter region having the first conductivity type, the collector region, the base region and the emitter region being arranged as a stack. The emitter region defining an elevated structure defined at least…

MOSFET bridge circuit

Granted: November 29, 2016
Patent Number: 9509227
In a general aspect, a bridge circuit can include a first bridge including a first plurality of MOSFETs and including a first input terminal and a second input terminal, and a second bridge including a second plurality of MOSFETs and including a third input terminal and a fourth input terminal. The first bridge and the second bridge can be coupled in parallel and being coupled to a first load terminal and a second load terminal.

Termination region of a semiconductor device

Granted: November 15, 2016
Patent Number: 9496391
In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.

MIC/GND detection and automatic switch

Granted: November 15, 2016
Patent Number: 9497559
This document discusses, among other things, an audio jack detection switch configured to be coupled to first and second GND/MIC terminals of an audio jack, wherein the audio jack detection switch includes a detection circuit configured to measure an impedance on the first and second GND/MIC terminals and identify each GND/MIC terminal as either a GND pole or a MIC pole using the measured impedance, and wherein the audio jack detection switch includes a switch configured to automatically…

Self test of MEMS accelerometer with ASICS integrated capacitors

Granted: November 8, 2016
Patent Number: 9488693
An apparatus comprises a micro-electromechanical system (MEMS) sensor including a first capacitive element and a second capacitive element and an integrated circuit (IC). The IC includes a switch network circuit and a capacitance measurement circuit. The switch network circuit is configured to electrically decouple the first capacitive element of the MEMS sensor from a first input of the IC and electrically couple the second capacitive element to a second input of the IC. The capacitance…

Package including a semiconductor die and a capacitive component

Granted: October 25, 2016
Patent Number: 9478519
In one general aspect, a method can include forming a redistribution layer on a substrate using a first electroplating process, and forming a conductive pillar on the redistribution layer using a second electroplating process. The method can include coupling a semiconductor die to the redistribution layer, and can include forming a molding layer encapsulating at least a portion of the redistribution layer and at least a portion of the conductive pillar.

Conductivity modulation in a silicon carbide bipolar junction transistor

Granted: October 25, 2016
Patent Number: 9478629
In one general aspect, a silicon carbide bipolar junction transistor (BJT) can include a collector region, a base region on the collector region, and an emitter region on the base region. The silicon carbide BJT can include a base contact electrically contacting the base region where the base region having an active part interfacing the emitter region. The silicon carbide BJT can also include an intermediate region of semiconductor material having at least a part extending from the…

Silicon-carbide trench gate MOSFETs

Granted: October 11, 2016
Patent Number: 9466709
In a general aspect, an apparatus can include a semiconductor substrate, a drift region disposed in the semiconductor substrate; a body region disposed in the drift region and a source region disposed in the body region. The apparatus can also include a gate trench disposed in the semiconductor substrate. The apparatus can further include a gate dielectric disposed on a sidewall and a bottom surface of the gate trench, the gate dielectric on the sidewall defining a first interface with…

SiC power device having a high voltage termination

Granted: October 4, 2016
Patent Number: 9461108
In one general aspect, an apparatus can include a semiconductor region including a silicon carbide material and a junction termination extension implant region disposed in the semiconductor region. The apparatus can include a low interface state density portion of a dielectric layer having at least a portion in contact with the junction termination extension implant region.

Micromachined 3-axis accelerometer with a single proof-mass

Granted: September 27, 2016
Patent Number: 9455354
This document discusses, among other things, an inertial measurement system including a device layer including a single proof-mass 3-axis accelerometer, a cap wafer bonded to a first surface of the device layer, and a via wafer bonded to a second surface of the device layer, wherein the cap wafer and the via wafer are configured to encapsulate the single proof-mass 3-axis accelerometer. The single proof-mass 3-axis accelerometer can be suspended about a single, central anchor, and can…