Intevac Patent Applications

SPUTTERING SYSTEM AND METHOD FOR HIGHLY MAGNETIC MATERIALS

Granted: May 12, 2016
Application Number: 20160133445
A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having highly magnetic sputtering material provided on front surface thereof a magnet assembly operable to reciprocally scan across the length L in close proximity to rear surface of the target and the magnet assembly comprises: a back plate made of magnetic material; a first group of magnets arranged in a single line central to the back plate and…

SPUTTERING SYSTEM AND METHOD FOR HIGHLY MAGNETIC MATERIALS

Granted: August 20, 2015
Application Number: 20150235824
A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having highly magnetic sputtering material provided on front surface thereof a magnet assembly operable to reciprocally scan across the length L in close proximity to rear surface of the target and the magnet assembly comprises: a back plate made of magnetic material; a first group of magnets arranged in a single line central to the back plate and…

SPUTTERING SYSTEM AND METHOD USING COUNTERWEIGHT

Granted: November 13, 2014
Application Number: 20140332376
A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having sputtering material provided on front surface thereof; a magnet operable to reciprocally scan across the length L in close proximity to rear surface of the target; and a counterweight operable to reciprocally scan at same speed but opposite direction of the magnet.

SOLAR CELLS HAVING GRADED DOPED REGIONS AND METHODS OF MAKING SOLAR CELLS HAVING GRADED DOPED REGIONS

Granted: June 19, 2014
Application Number: 20140166087
A photovoltaic cell having a graded doped region such as a graded emitter and methods of making photovoltaic cells having graded doped regions such as a graded emitter are disclosed. Doping is adjusted across a surface to minimize resistive (I2R) power losses. The graded emitters provide a gradual change in sheet resistance over the entire distance between the lines. The graded emitter profile may have a lower sheet resistance near the metal lines and a higher sheet resistance farther…

GRID FOR PLASMA ION IMPLANT

Granted: June 19, 2014
Application Number: 20140170795
A grid for minimizing effects of ion divergence in plasma ion implant. The plasma grid is made of a flat plate having a plurality of holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming beamlets of ions that diverge in one direction. A mask is used to form the implanted shapes on the wafer, wherein the holes in the mask are oriented orthogonally to the direction of beamlet divergence.

METHOD AND APPARATUS TO PRODUCE HIGH DENSITY OVERCOATS

Granted: April 17, 2014
Application Number: 20140102888
A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the…

NARROW SOURCE FOR PHYSICAL VAPOR DEPOSITION PROCESSING

Granted: October 31, 2013
Application Number: 20130284594
A narrow sputtering source and target which are designed to be installed in a series on a sputtering chamber. Each of the narrow sputtering source has length sufficient to traverse one direction of the sputtering zone, but is much narrower than the orthogonal direction of the sputtering zone. When the sputtering chamber performs a pass-by sputtering process, each of the narrow sputtering sources is sufficiently long to traverse the sputtering zone in the direction orthogonal to the…

SYSTEM ARCHITECTURE FOR VACUUM PROCESSING

Granted: October 31, 2013
Application Number: 20130287526
A system for processing substrates in plasma chambers, such that all substrates transport and loading/unloading operations are performed in atmospheric environment, but processing is performed in vacuum environment. The substrates are transported throughout the system on carriers. The system's chambers are arranged linearly, such that carriers move from one chamber directly to the next. A conveyor, placed above or below the system's chambers, returns the carriers to the system's entry…

DUAL-MASK ARRANGEMENT FOR SOLAR CELL FABRICATION

Granted: October 24, 2013
Application Number: 20130276978
An arrangement for supporting substrates during processing, having a wafer carrier with a susceptor for supporting the substrate and confining the substrate to predetermined position. An inner mask is configured for placing on top of the substrate, the inner mask having an opening pattern to mask unprocessed parts of the substrate, but expose remaining parts of the substrate for processing. An outer mask is configured for placing on top of the inner mask, the outer mask having an opening…

SYSTEM ARCHITECTURE FOR COMBINED STATIC AND PASS-BY PROCESSING

Granted: June 27, 2013
Application Number: 20130161183
Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the…

HIGH THROUGHPUT LOAD LOCK FOR SOLAR WAFERS

Granted: June 13, 2013
Application Number: 20130149075
A system for transporting substrates from an atmospheric pressure to high vacuum pressure and comprising: a rough vacuum chamber having an entry valve and an exit opening; a high vacuum chamber having an entry opening, the high vacuum chamber coupled to the rough vacuum chamber such that the exit opening and the entry opening are aligned; a valve situated between the exit opening and the entry opening; a first conveyor belt provided in the rough vacuum chamber; a second conveyor provided…

LINEAR SCANNING SPUTTERING SYSTEM AND METHOD

Granted: May 9, 2013
Application Number: 20130112546
A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behinds the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. The movable…

SUBSTRATE PROCESSING SYSTEM AND METHOD

Granted: May 9, 2013
Application Number: 20130115764
A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for…

SOLAR WAFER ELECTROSTATIC CHUCK

Granted: May 2, 2013
Application Number: 20130105087
An electrostatic chuck is disclosed, which is especially suitable for fabrication of substrates at high throughput. The disclosed chuck may be used for fabricating large substrates or several smaller substrates simultaneously. For example, disclosed embodiments can be used for fabrication of multiple solar cells simultaneously, providing high throughput. An electrostatic chuck body is constructed using aluminum body having sufficient thermal mass to control temperature rise of the chuck,…

BACKSIDE-THINNED IMAGE SENSOR USING Al2O3 SURFACE PASSIVATION

Granted: May 2, 2013
Application Number: 20130105928
A structure and method of manufacture is disclosed for a backside thinned imager that incorporates a conformal, Al2O3, low thermal budget, surface passivation. This passivation approach facilitates fabrication of backside thinned, backside illuminated, silicon image sensors with thick silicon absorber layer patterned with vertical trenches that are formed by etching the exposed back surface of a backside-thinned image sensor to control photo-carrier diffusion and optical crosstalk. A…

SYSTEM ARCHITECTURE FOR PLASMA PROCESSING SOLAR WAFERS

Granted: May 2, 2013
Application Number: 20130109189
A system for plasma processing of wafers at high throughput, particularly suitable for processing solar cells. A loading station has a loading conveyor, a loading transport mechanism, and a chuck loading station accepting transportable electrostatic chucks, wherein the loading transport mechanism is configured to remove wafers from the conveyor and place them on the transportable electrostatic chucks. The transportable chuck is delivered to at least one processing chamber to perform…

SYSTEM AND METHOD FOR COMMERCIAL FABRICATION OF PATTERNED MEDIA

Granted: April 25, 2013
Application Number: 20130098761
A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to…

INDUCTIVE/CAPACITIVE HYBRID PLASMA SOURCE AND SYSTEM WITH SUCH CHAMBER

Granted: April 11, 2013
Application Number: 20130087531
A plasma processing chamber having capacitive and inductive coupling of RF power. An RF power source is connected to an inductive coil and to a top electrode via a variable capacitor to control the ratio of power applied to the coil and electrode. The bottom electrode, which is part of the chuck holding the substrates, is floating, but has parasitive capacitance coupling to ground. No RF bias is applied to the chuck and/or the substrate, but the substrate is chucked using DC power. In a…

DRY ETCHING METHOD OF SURFACE TEXTURE FORMATION ON SILICON WAFER

Granted: June 7, 2012
Application Number: 20120138139
Systems and methods for improving surface reflectance of silicon wafers are disclosed. The systems and methods improve surface reflectance by forming a textured surface on the silicon wafer by performing surface oxidation and dry etching processes. The surface oxidation maybe performed using a dry oxygen plasma process. A dry etch process is performed to remove the oxide layer formed by the surface oxidation step and etch the Silicon layer with oxide masking. Dry etching enables black…

ION IMPLANT SYSTEM HAVING GRID ASSEMBLY

Granted: May 24, 2012
Application Number: 20120125259
An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid…