Low forward voltage rectifier
Granted: July 11, 2017
Patent Number:
9705417
A rectifier includes a larger Field Effect Transistor (FET1) and a smaller FET (FET2). A sense resistor is in series with FET2's body diode between a cathode terminal and an anode terminal. If the cathode terminal voltage is greater than the voltage on the anode terminal, then body diodes of FETs are reverse biased, the FETs are controlled to be off, and there is no current flow through the rectifier. If, however, the voltage on the anode terminal becomes positive with respect to the…
Chopper stabilized amplifier with synchronous switched capacitor noise filtering
Granted: July 4, 2017
Patent Number:
9698741
A chopper stabilzed amplifier with synchronous switched capacitor noise filtering is disclosed. In an exemplary embodiment, an apparatus includes a chopper amplifier having an input that receives an input signal and an output that outputs an amplified signal. The chopper amplifier includes an input chopping circuit and an output chopping circuit, where the input and output chopping circuits operate in response to a chop clock. The apparatus also includes a switched capacitor filter…
AC line filter and AC-to-DC rectifier module
Granted: May 2, 2017
Patent Number:
9641065
An AC line filter module includes AC-to-DC rectification circuitry. The rectification circuitry includes four low forward voltage rectifiers coupled together as two high-side rectifiers and two low-side rectifiers, where each low forward voltage rectifier includes an NPN bipolar transistor and a parallel-connected diode. A current splitting pair of inductors splits a return current so that a portion of the current is supplied to the collector of an NPN bipolar transistor that is on, and…
Bridging DMB structure for wire bonding in a power semiconductor module
Granted: May 2, 2017
Patent Number:
9640461
A power module includes a substrate DMB (Direct Metal Bonded). A novel bridging DMB is surface mounted to the substrate DMB along with power semiconductor device dice. The top metal layer of the bridging DMB has one or more islands to which bonding wires can connect. In one example, an electrical path extends from a module terminal, through a first bonding wire and to a first location on a strip-shaped island, through the island to a second location, and from the second location and…
Trench IGBT with tub-shaped floating P-well and hole drains to P-body regions
Granted: April 18, 2017
Patent Number:
9627521
A trench IGBT has a gate electrode disposed in a trench. A tub-shaped floating P-well is disposed on one side of the trench. The tub-shaped floating P-well has a central shallower portion and a peripheral deeper portion. An inner sidewall of the trench is semiconductor material of the peripheral deeper portion of the floating P-well. On the other side of the trench is a P type body region involving a plurality of deeper portions and a plurality of shallower portions. Each deeper portion…
Power device cassette with auxiliary emitter contact
Granted: March 21, 2017
Patent Number:
9601473
A press pack module includes a collector module terminal, an emitter module terminal, a gate module terminal, and an auxiliary module terminal. Each IGBT cassette within the module includes a set of shims, two contact pins, and an IGBT die. The first contact pin provides part of a first electrical connection between the gate module terminal and the IGBT gate pad. The second contact pin provides part of a second electrical connection between the auxiliary module terminal and a shim that…
High-voltage stacked transistor circuit
Granted: March 14, 2017
Patent Number:
9595950
A High-Voltage Stacked Transistor Circuit (HVSTC) includes a stack of power transistors coupled in series between a first terminal and a second terminal. The HVSTC also has a control terminal for turning on an off the power transistors of the stack. All of the power transistors of the stack turn on together, and turn off together, so that the overall stack operates like a single transistor having a higher breakdown voltage. Each power transistor, other than the one most directly coupled…
Reverse bipolar junction transistor integrated circuit
Granted: March 7, 2017
Patent Number:
9589953
A Reverse Bipolar Junction Transistor (RBJT) integrated circuit comprises a bipolar transistor and a parallel-connected distributed diode, where the base region is connected neither to the collector electrode nor to the emitter electrode. The bipolar transistor has unusually high emitter-to-base and emitter-to-collector reverse breakdown voltages. In the case of a PNP-type RBJT, an N base region extends into a P? epitaxial layer, and a plurality of P++ collector regions extend into the…
Super junction field effect transistor with internal floating ring
Granted: March 7, 2017
Patent Number:
9590092
A Super Junction Field Effect Transistor (FET) device includes a charge compensation region disposed on a substrate of semiconductor material. The charge compensation region includes a set of strip-shaped P? type columns, a floating ring-shaped P? type column that surrounds the set of strip-shaped P? type columns, and a set of ring-shaped P? type columns that surrounds the floating ring-shaped P? type column. A source metal is disposed above portions of the charge compensation region.…
Trench separation diffusion for high voltage device
Granted: March 7, 2017
Patent Number:
9590033
A manufacturable and economically viable edge termination structure allows a semiconductor device to withstand a very high reverse blocking voltage (for example, 8500 volts) without suffering breakdown. A P type peripheral aluminum diffusion region extends around the bottom periphery of a thick die. The peripheral aluminum diffusion region extends upward from the bottom surface of the die, extending into N? type bulk silicon. A deep peripheral trench extends around the upper periphery of…
Non-isolated AC-to-DC converter with fast dep-FET turn on and turn off
Granted: February 14, 2017
Patent Number:
9571003
Within a non-isolated and efficient AC-to-DC power supply circuit: 1) a dep-FET is turned off to decouple an output voltage VO node from a VR node when a rectifier output signal VR on the VR node is greater than a first predetermined voltage VP and, 2) the dep-FET is enabled to be turned on so that a constant charging current flows from the VR node and onto the VO node when VR is less than VP (provided that VO is less than a second predetermined voltage VO(MAX) and provided that VR is…
Multi-stage LED driver with current proportional to rectified input voltage and low distortion
Granted: January 10, 2017
Patent Number:
9544961
A system for driving a multi-stage LED with low distortion and with current proportional to rectified input voltage is disclosed. In an exemplary embodiment, an apparatus includes LED groups connected in series to form an LED string having a first node, a last node, and intermediate nodes. The apparatus also includes current cells having inputs coupled to the nodes and outputs coupled to an output resistor. Each current cell selectively regulates current to flow between its respective…
Loading a machine code API onto an 8-bit virtual machine to enable new functionality
Granted: January 10, 2017
Patent Number:
9542212
A compact, register-based, eight-bit virtual machine is realized on a resource-constrained device such as, for example, an IR remote control device. The IR remote control device includes a script interpreter, as well as loader API functionality and API functionality to support communication over a bidirectional link. The functionality of the remote control device is customized by loading either a machine code API routine and/or a script API routine onto the remote control device via the…
Chopper stabilized amplifier with synchronous switched capacitor noise filtering
Granted: October 18, 2016
Patent Number:
9473074
A chopper stabilized amplifier with synchronous switched capacitor noise filtering is disclosed. In an exemplary embodiment, an apparatus includes a chopper amplifier having an input that receives an input signal and an output that outputs an amplified signal. The chopper amplifier includes an input chopping circuit and an output chopping circuit, where the input and output chopping circuits operate in response to a chop clock. The apparatus also includes a switched capacitor filter…
Bridging DMB structure for wire bonding in a power semiconductor device module
Granted: September 13, 2016
Patent Number:
9443792
A power module includes a substrate DMB (Direct Metal Bonded). A novel bridging DMB is surface mounted to the substrate DMB along with power semiconductor device dice. The top metal layer of the bridging DMB has one or more islands to which bonding wires can connect. In one example, an electrical path extends from a module terminal, through a first bonding wire and to a first location on a strip-shaped island, through the island to a second location, and from the second location and…
Blank bit and processor instructions employing the blank bit
Granted: September 6, 2016
Patent Number:
9436466
Reading a value into a register, checking to see if the value is a NULL, and then jumping out of a loop if the value is a NULL is a common task that processors perform. To speed performance of such a task, a novel “blank bit” is added to the flag register of a processor. When a first instruction (arithmetic, logic or load) is executed, the instruction operands are checked to see if any is a NULL character value. Information on the result of the check is stored in the blank bit.…
Dimming a multi-lamp fluorescent light fixture by turning off an individual lamp using a wireless fluorescent lamp starter
Granted: August 30, 2016
Patent Number:
9433067
A multi-lamp fluorescent light fixture includes a plurality of replaceable fluorescent lamp starter units. Each starter unit has a built-in microcontroller, an RF (Radio-Frequency) receiver, and communicates wirelessly with a master unit. The plurality of starter units can be wirelessly controlled to dim the multi-lamp fixture. Each starter unit receives a DIM command. Each starter unit identified as a dimmer starter unit responds to the DIM command by turning off coupled fluorescent…
Trench IGBT with tub-shaped floating P-well and hole drains to P-body regions
Granted: August 16, 2016
Patent Number:
9419118
A trench IGBT has a gate electrode disposed in a trench. A tub-shaped floating P-well is disposed on one side of the trench. The tub-shaped floating P-well has a central shallower portion and a peripheral deeper portion. An inner sidewall of the trench is semiconductor material of the peripheral deeper portion of the floating P-well. On the other side of the trench is a P type body region involving a plurality of deeper portions and a plurality of shallower portions. Each deeper portion…
Ultra-fast breakover diode
Granted: June 28, 2016
Patent Number:
9379203
An ultra-fast breakover diode has a turn on time TON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than one percent per ten degrees Celsius change. In another aspect of the invention, a breakover diode has a reverse breakdown voltage that is greater, in absolute magnitude, than the forward breakover voltage, where the forward breakover voltage is greater than +400 volts. Yet another aspect of the invention involves a…
Video and content controlled backlight
Granted: May 31, 2016
Patent Number:
9355580
A display device includes a display panel; and a backlight panel provided below the display panel and defining a plurality of regions. A first array of light emitting diodes (LEDs) is provided along a first direction, each LED of the first array being coupled to a first line. A driver is coupled to the first line to drive the LEDs coupled to the first line. A second array of LEDs is provided along a second direction, each LEDs of the second array being coupled to a second line. A…
