Ozone for selective hydrophilic surface treatment
Granted: November 8, 2022
Patent Number:
11495456
Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.
Surface pretreatment process to improve quality of oxide films produced by remote plasma
Granted: November 8, 2022
Patent Number:
11495437
Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to…
Systems and methods for workpiece processing
Granted: October 25, 2022
Patent Number:
11482434
A processing system for processing a plurality of workpieces includes a transfer chamber in process flow communication with a first processing chamber and a second processing chamber, the transfer chamber having a first straight side, wherein the first process chamber includes at least one first processing station, and wherein the first processing chamber is disposed along the first straight side, wherein the second process chamber includes at least two second processing stations,…
Processing of workpieces using deposition process and etch process
Granted: October 4, 2022
Patent Number:
11462413
Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can…
Processing of workpieces using ozone gas and hydrogen radicals
Granted: April 26, 2022
Patent Number:
11315801
Methods for processing a workpiece are provided. The workpiece can include a ruthenium layer and a copper layer. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include performing an ozone etch process on the workpiece to at least a portion of the ruthenium layer. The method can also include performing a hydrogen radical treatment process on a workpiece to remove at least a portion of an oxide…
Processing of semiconductors using vaporized solvents
Granted: March 29, 2022
Patent Number:
11289323
Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.
Spacer etching process
Granted: March 15, 2022
Patent Number:
11276560
Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has at least one material layer and at least one structure thereon. The method includes admitting a process gas into a plasma chamber, generating one or more species from the process gas, and filtering the one or more species to create a filtered mixture. The method further includes providing RF power to a bias…
Carbon containing hardmask removal process using sulfur containing process gas
Granted: March 1, 2022
Patent Number:
11264249
Apparatus, systems, and methods for conducting a hardmask (e.g., carbon containing hardmask) removal process on a workpiece are provided. In one example implementation, a process can include admitting a process gas into a plasma chamber, generating a plasma in the plasma chamber from the process gas using an inductively coupled plasma source, and exposing the carbon containing hardmask to the plasma to remove at least a portion of the carbon containing hardmask. The process gas can…
Methods for processing a workpiece using fluorine radicals
Granted: February 22, 2022
Patent Number:
11257680
Methods for processing a workpiece with fluorine radicals are provided. In one example implementation, the method includes a workpiece having at least one silicon layer and at least one silicon germanium layer. The method can include placing the workpiece on a workpiece support in a processing chamber. The method can include generating one or more species from a process gas in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The…
Systems and methods for workpiece processing
Granted: February 22, 2022
Patent Number:
11257696
Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The plasma processing system can include a loadlock chamber. The loadlock chamber can include a workpiece column configured to support a plurality of workpieces in a stacked arrangement. The system can further include at least two process chambers. The at least two process chambers can have at…
Gas flow control for millisecond anneal system
Granted: February 22, 2022
Patent Number:
11255606
Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond…
Systems and methods for workpiece processing using neutral atom beams
Granted: February 15, 2022
Patent Number:
11251075
Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a…
Silicon oxide selective dry etch process
Granted: February 15, 2022
Patent Number:
11251050
Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at…
Material deposition prevention on a workpiece in a process chamber
Granted: February 15, 2022
Patent Number:
11251026
Focus ring assemblies for plasma processing apparatus are provided. In one example implementation, an apparatus includes a plasma source configured to generate a plasma. The apparatus includes a chamber configured to receive a workpiece. The apparatus includes a workpiece support contained in the chamber and configured to support the workpiece. The apparatus includes a focus ring assembly. The focus ring assembly includes a focus ring having an upper tier and a lower tier. An inner edge…
Plasma strip tool with uniformity control
Granted: December 14, 2021
Patent Number:
11201036
Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber, a first pedestal in the processing chamber operable to support a workpiece, and a second pedestal in the processing chamber operable to support another workpiece. The first pedestal can define a first processing station. The second pedestal can define a second processing station. The apparatus can further include a first plasma…
Spacer open process by dual plasma
Granted: December 7, 2021
Patent Number:
11195718
Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a spacer treatment process to expose the workpiece to species generated from a first process gas in a first plasma to perform a spacer treatment process on a spacer layer on the workpiece. The first plasma can be generated in the processing chamber. After performing the spacer treatment process,…
Pedestal assembly for plasma processing apparatus
Granted: December 7, 2021
Patent Number:
11195704
Pedestal assemblies for processing apparatus, such as plasma processing apparatus are provided. In one example implementation, a plasma processing apparatus can include a processing chamber having a processing chamber interior. The apparatus can include a plasma source configured to induce a plasma in the processing chamber interior. The apparatus can include a pedestal configured to support a substrate in the processing chamber interior during processing of the substrate. The apparatus…
Thermal processing of closed shape workpieces
Granted: December 7, 2021
Patent Number:
11193178
Systems and methods for heat treating closed shape workpieces are provided. In one example implementation, a method can include imparting relative motion of the closed shape workpiece such that the perimeter surface of the closed shape workpiece is moved relative to the lamp heat source from a first position where a first portion of the closed shape workpiece is presented to the lamp heat source to a second position where a second portion of the closed shape workpiece is presented to the…
Variable mode plasma chamber utilizing tunable plasma potential
Granted: November 30, 2021
Patent Number:
11189464
Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma…
Selective etch process using hydrofluoric acid and ozone gases
Granted: November 23, 2021
Patent Number:
11183397
Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the…
