Novellus Systems Patent Applications

IN-SITU DEPOSITION OF FILM STACKS

Granted: January 15, 2015
Application Number: 20150013607
An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a…

APPARATUS FOR ADVANCED PACKAGING APPLICATIONS

Granted: December 4, 2014
Application Number: 20140357089
The embodiments disclosed herein pertain to novel methods and apparatus for removing material from a substrate. In certain embodiments, the method and apparatus are used to remove negative photoresist, though the disclosed techniques may be implemented to remove a variety of materials. In practicing the disclosed embodiments, a stripping solution may be introduced from an inlet to an internal manifold, sometimes referred to as a cross flow manifold. The solution flows laterally through a…

VACUUM ROBOT WITH LINEAR TRANSLATION CARRIAGE

Granted: November 27, 2014
Application Number: 20140348618
A robot for use in vacuum chambers is disclosed. The robot may be mounted within an oblong transfer chamber and may be translated within the transfer chamber by an umbilical arm operating in conjunction with a linear motion guide and carriage. Motors or drive systems for the robot may be housed in atmospheric conditions, and the transfer chamber may be kept at a vacuum. The robot may include one or more arms configured for wafer handling. The robot may include one or more motors or drive…

METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION

Granted: October 9, 2014
Application Number: 20140302689
Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are…

CERAMIC SHOWERHEAD WITH EMBEDDED RF ELECTRODE FOR CAPACITIVELY COUPLED PLASMA REACTOR

Granted: August 28, 2014
Application Number: 20140238608
A showerhead assembly for a substrate processing system includes a back plate connected to a gas channel. A face plate is connected adjacent to a first surface of the back plate and includes a gas diffusion surface. An electrode is arranged in one of the back plate and the face plate and is connected to one or more conductors. A gas plenum is defined between the back plate and the face plate and is in fluid communication with the gas channel. The back plate and the face plate are made of…

METHODS AND APPARATUS FOR WETTING PRETREATMENT FOR THROUGH RESIST METAL PLATING

Granted: August 21, 2014
Application Number: 20140230860
Disclosed are pre-wetting apparatus designs and methods for cleaning solid contaminants from substrates prior to through resist deposition of metal. In some embodiments, a pre-wetting apparatus includes a process chamber having a substrate holder, and at least one nozzle located directly above the wafer substrate and configured to deliver pre-wetting liquid (e.g., degassed deionized water) onto the substrate at a grazing angle of between about 5 and 45 degrees. In some embodiments the…

PURGING OF POROGEN FROM UV CURE CHAMBER

Granted: August 21, 2014
Application Number: 20140230861
A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet…

METAL AND SILICON CONTAINING CAPPING LAYERS FOR INTERCONNECTS

Granted: August 7, 2014
Application Number: 20140216336
Disclosed methods cap exposed surfaces of copper lines with a layer of metal or metal-containing compound combined with silicon. In some cases, the metal or metal-containing compound forms an atomic layer. In certain embodiments, the methods involve exposing the copper surface first to a metal containing precursor to form an atomic layer of adsorbed precursor or metal atoms, which may optionally be converted to an oxide, nitride, carbide, or the like by, e.g., a pinning treatment.…

PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION

Granted: August 7, 2014
Application Number: 20140216337
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

METHOD AND APPARATUS FOR PURGING AND PLASMA SUPPRESSION IN A PROCESS CHAMBER

Granted: August 7, 2014
Application Number: 20140217193
A substrate processing system includes a showerhead that comprises a head portion and a stem portion and that delivers precursor gas to a processing chamber. A baffle includes a base portion having an outer diameter that is greater than an outer diameter of the head portion of the showerhead, that comprises a dielectric material and that is arranged between the head portion of the showerhead and an upper surface of the processing chamber.

PLASMA ACTIVATED DEPOSITION OF A CONFORMAL FILM ON A SUBSTRATE SURFACE

Granted: July 31, 2014
Application Number: 20140209026
An apparatus deposits a film on a substrate including a reaction chamber arranged on a substrate support. An inlet port delivers gas phase reactants to the reaction chamber. A plasma generator provides plasma to the reaction chamber. A controller is configured to flow a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, tris(dimethylamido)silylazide, and bis(tert-butylhydrazido)diethyl silane. The silicon-containing reactant is introduced in…

PLASMA ACTIVATED CONFORMAL FILM DEPOSITION

Granted: July 31, 2014
Application Number: 20140209562
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first…

HIGH DOSE IMPLANTATION STRIP (HDIS) IN H2 BASE CHEMISTRY

Granted: July 3, 2014
Application Number: 20140182619
Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.

ENHANCEMENT OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING

Granted: July 3, 2014
Application Number: 20140183049
The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During…

TEMPERATURE CONTROLLED SHOWERHEAD

Granted: June 12, 2014
Application Number: 20140158792
A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

METHODS FOR DEPOSITING ULTRA THIN LOW RESISTIVITY TUNGSTEN FILM FOR SMALL CRITICAL DIMENSION CONTACTS AND INTERCONNECTS

Granted: June 12, 2014
Application Number: 20140162451
Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides…

METHODS FOR DEPOSITING FILMS ON SENSITIVE SUBSTRATES

Granted: May 22, 2014
Application Number: 20140141542
Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular…

ELECTROLYTE LOOP WITH PRESSURE REGULATION FOR SEPARATED ANODE CHAMBER OF ELECTROPLATING SYSTEM

Granted: May 15, 2014
Application Number: 20140131211
An electrolyte, and particularly anolyte, may be circulated via an open loop having a pressure regulator, so that the pressure in the plating chamber is maintained at a constant (or substantially constant) value with respect to atmospheric pressure. In these embodiments, a pressure regulator is in fluid communication with the anode chamber.

CONFORMAL FILM DEPOSITION FOR GAPFILL

Granted: May 15, 2014
Application Number: 20140134827
A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs…

ELECTROSTATIC CHUCKS AND METHODS FOR REFURBISHING SAME

Granted: May 8, 2014
Application Number: 20140124123
Novel methods for extending electrostatic chuck lifetimes are provided. The methods involve providing a chuck having a metal cooling plate attached to a ceramic top plate, and after a period of use, disassembling the chuck, and providing a new chuck including the used metal cooling plate. In certain embodiments, the use of a low temperature bond material uniquely allows the described disassembly and reassembly without damage to other parts of the chuck.