Method and apparatus to provide electromagnetic interference shielding of optical-electrical module
Granted: November 23, 2010
Patent Number:
7837503
A pluggable optical/electrical module is disclosed. One or more features operate to decrease electromagnetic interference are implemented, which features include deforming the portions that mate together to form the housing, placing elbow deformities on extending fingers to more properly seal the housing convex shape to housing to seal gaps between multiple sections, and placing an EMI insulating material within an opening that is formed for the latch that locks the module in place in a…
Method of manufacturing semiconductor laser for communication, semiconductor laser for communication and optical transmission module
Granted: November 16, 2010
Patent Number:
7833807
Some semiconductor lasers have an initial failure mode that is advanced as the amount of optical power therein, namely, the amount of optical output observed from the outside increases in almost independent of the temperature. The initial failure mode that is advanced as the amount of optical output increases is not sufficiently screened, so that the initial failure rate is somewhat higher than that of the semiconductor laser having the conventional active layer material. It is effective…
Semiconductor device
Granted: October 26, 2010
Patent Number:
7821125
The invention provides a heat radiating structure which reduces a mechanical stress applied to an electronic part mounted on a printed circuit board including a semiconductor package. The heat radiating structure is constructed by a semiconductor package mounted on a printed circuit board, a thermal conduction sheet arranged on an upper surface of the semiconductor package, and a metal case provided with a heat radiating fin for receiving a heat transmitted form the thermal conduction…
System and method for viewing projected light from portable devices
Granted: October 26, 2010
Patent Number:
7821709
An apparatus is disclosed which may include a sheet of reflective material suitable for forming a display screen; a screen control mechanism operable to move the reflective material into extended and retracted positions, wherein the apparatus is portable and configured to receive image data from a hand-held projection device.
Nitride semiconductor light emitting device and method for manufacturing the same
Granted: October 26, 2010
Patent Number:
7822088
A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlYGa1-YN whose Al content has a relationship of…
Electro-absorption optical modulator integrated with a laser to produce high speed, uncooled, long distance, low power, 1550 nm optical communication device with optimized parameters
Granted: October 5, 2010
Patent Number:
7809038
In a conventional EA/DFB laser, since the temperature dependence of the operation wavelength of the EA portion is substantially different from that of the DFB portion, the temperature range over which a stable operation is possible is small. In the case of using the EA/DFB laser as a light emission device, an uncooled operation is not possible. An EA/DFB laser which does not require a temperature control mechanism is proposed. A quantum well structure in which a well layer made of any…
Semiconductor laser device
Granted: September 7, 2010
Patent Number:
7792173
In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge…
Pluggable module and detaching jig thereof
Granted: August 3, 2010
Patent Number:
7766679
There is provided a pluggable module having grooves, on lateral faces, for latching with a cage and engaging portions for detachment, wherein the module body is detached from the cage by using a module detaching unit which is inserted along the grooves and which locks the engaging portions of the module body in the length direction. Further, there is provided a detaching jig including: latch release portions which are inserted between the pluggable module and the cage; lock portions…
Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser
Granted: July 20, 2010
Patent Number:
7760782
The invention aims at realizing a 1300-nm-band direct modulation laser, having a single lateral mode, in which a chip light power of several milliwatts and a low current operation are simultaneously realized. Also, the invention aims at realizing a laser light source excellent in economy as well by realizing output characteristics of a vertical cavity surface light emitting laser. A distributed Bragg reflector laser is constructed in the form of a semiconductor laser having a multilayer…
Semiconductor laser diode and its fabrication process
Granted: June 29, 2010
Patent Number:
7746910
A semiconductor laser diode device with small driving current and no distortion in the projected image. The semiconductor laser diode includes an n-GaAs substrate and, an n-cladding layer on the n-GaAs substrate, an active layer, a p-clad layer, a multilayer formed from sequentially laminated p-contact layers, and a ridge formed by selectively etching from the upper surface of the p-contact active layer to a specified depth on the p-contact layer, and an insulating film deposited on the…
Semiconductor laser device
Granted: June 15, 2010
Patent Number:
7738521
A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals…
Wavelength tunable optical transmitter and optical transceiver
Granted: June 8, 2010
Patent Number:
7733929
A wavelength tunable laser module for DWDM is used, in which a single electroabsorption modulator integrated laser is mounted and an oscillation wavelength is made tunable by temperature control. Driving conditions of a laser and a modulator are determined such that they have approximately the same modulation and transmission characteristics in a temperature control range. Such an electroabsorption modulator integrated laser is used and the driving conditions are incorporated, thereby a…
Wavelength tunable laser apparatus and wavelength control method
Granted: June 8, 2010
Patent Number:
7733933
Included are: a gain chip having a gain unit and a phase control region; a current supply for causing a positive current to flow to the phase control region; a voltage supply for applying a bias voltage to the phase control region; and a control unit for selectively driving the current supply or the voltage supply depending on a direction of the wavelength shift. The control unit drives the current supply when a laser wavelength is to be shifted to a shorter wavelength side from a…
Fabrication method for algainnpassb based devices
Granted: May 18, 2010
Patent Number:
RE41336
A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor AlaGabIn1-a-bNxPyAszSb1-x-y-z (0?a?1, 0?b?1, 0<x<1, 0?y<1, 0?z<1), and a method of making the semiconductor device and apparatus. For at least two semiconductor layers out of the plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is…
Opto-semiconductor devices
Granted: May 18, 2010
Patent Number:
7720127
An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for…
Optical module having improved access to ultraviolet curing light
Granted: May 11, 2010
Patent Number:
7712978
The optical module comprises a device mounted with a photoelectric element and a receptacle to optically connect this device and an optical fiber is provided. The receptacle comprises a device holder at its one end, allows the device holder to be fitted to the top end side of the device, and fixed and held through the interposition of the ultraviolet curing resin. The device holder comprises a window area relatively large in an amount of ultraviolet transmission dispersedly arranged on…
Optical transmission module, optical transmission apparatus, and structure for fixing member
Granted: May 11, 2010
Patent Number:
7712980
An optical transmission module mounted pluggably to a cage having an opening. The optical transmission module comprises a gasket on at least a part of an outer periphery of the module. The gasket is deformed depending on temperature change. The gasket is deformed according to temperature rise in a direction toward an inner wall of the cage to push the inner wall and deformed according to temperature drop in an opposite direction to the direction.
Optical integrated device and manufacturing method thereof
Granted: May 4, 2010
Patent Number:
7711229
In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching…
Optical transceiver module
Granted: April 27, 2010
Patent Number:
7703994
Provided is a metal casing structure capable of avoiding a cavity resonance at 10 GHz and 20 GHz by controlling an eigenmode frequency in an inner space of a casing without involving an increase in cost, and a 10 Gbit/s optical transceiver module which achieves reduction in unnecessary electromagnetic waves and cost. In the optical transceiver module, a metal casing having a cavity therein is formed by an upper casing (100) and a lower casing (101), a metal partition wall (103, 104) is…
Method for manufacturing optical semiconductor device
Granted: March 30, 2010
Patent Number:
7687295
In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au…
