Sandisk Patent Grants

Systems and methods for operating high voltage switches

Granted: February 21, 2017
Patent Number: 9575124
A system for communicating high voltages for a semiconductor device is provided. One system includes a controller having an input pad and an output pad, each of the input pad and the output pad being coupled to a respective high voltage switch of the controller. The system also includes a plurality of semiconductor chips, where each of the plurality of semiconductor chips has at least one input pad coupled to a high voltage switch of a respective semiconductor chip. A high voltage that…

Storage system power management using controlled execution of pending memory commands

Granted: February 21, 2017
Patent Number: 9575677
The various embodiments described herein include methods and/or systems for throttling power in a storage device. In one aspect, a method of operation in a storage system includes obtaining a power metric corresponding to a count of active memory commands in the storage system, where active memory commands are commands being executed by the storage system. The method further includes, in accordance with a determination that the power metric satisfies one or more power thresholds,…

Processing shaped data

Granted: February 21, 2017
Patent Number: 9575683
Systems and methods of processing shaped data to include selectively performing a modification operation. The modification operation may be performed in response to determining that shaped data satisfies one or more shaping adjustment criteria. Shaping of data may be discontinued to at least a portion of a memory based on a health metric for the portion satisfying a threshold.

Probability-based remedial action for read disturb effects

Granted: February 21, 2017
Patent Number: 9575829
A method may be performed in a data storage device that includes a memory and a controller, in response to a request to read data from the memory. The data is located within a first word line of the memory. The method includes accessing the data from the first word line and determining, based on a probability threshold, whether to perform a remedial action with respect to a second word line.

Non-volatile memory interface

Granted: February 21, 2017
Patent Number: 9575882
Apparatuses, systems, methods, and computer program products are disclosed for a memory controller. An apparatus includes a volatile memory medium located on a memory module. An apparatus includes a non-volatile memory medium located on a memory module. A memory controller is located on a memory module. A memory controller may be configured to provide access to at least a non-volatile memory medium over a direct wire interface with a processor.

Memory cells including vertically oriented adjustable resistance structures

Granted: February 21, 2017
Patent Number: 9576657
A memory cell is provided that includes a vertically-oriented adjustable resistance structure including a control terminal coupled to a word line, and a reversible resistance-switching element coupled in series with and disposed above or below the vertically-oriented adjustable resistance structure.

Low forming voltage non-volatile storage device

Granted: February 21, 2017
Patent Number: 9576660
A three-dimensional array of memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. The memory elements can be set to a low resistance state and reset to a high resistance state during standard operation by biasing appropriate voltages on the word lines and bit lines. Prior to standard operation, the memory elements undergo a forming operation, during which current through the bit lines is limited. A forming…

Sensing multiple reference levels in non-volatile storage elements

Granted: February 21, 2017
Patent Number: 9576673
Disclosed herein are techniques for sensing multiple reference levels in non-volatile storage elements without changing the voltage on the selected word line. One aspect includes determining a first condition of a selected non-volatile storage element with respect to a first reference level based on whether a sensing transistor conducts in response to a sense voltage on a sense node. Then, a voltage on the source terminal of the sensing transistor is modified after determining the first…

Cobalt-containing conductive layers for control gate electrodes in a memory structure

Granted: February 21, 2017
Patent Number: 9576966
An alternating stack of insulating layers and sacrificial material layers can be formed over a substrate. Memory stack structures and a backside trench are formed through the alternating stack. Backside recesses are formed by removing the sacrificial material layers from the backside trench selective to the insulating layers. A cobalt-containing material is deposited such that the cobalt-containing material continuously extends at least between a neighboring pair of cobalt-containing…

Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings

Granted: February 21, 2017
Patent Number: 9576967
Memory openings and support openings are formed through an alternating stack of insulating layers and spacer material layers over a semiconductor substrate. Deposition of a semiconductor material in the support openings during formation of epitaxial channel portions in the memory openings is prevented by Portions of the semiconductor substrate that underlie the support openings are converted into impurity-doped semiconductor material portions. During selective growth of epitaxial channel…

Three-dimensional memory structure having a back gate electrode

Granted: February 21, 2017
Patent Number: 9576971
A memory stack structure includes a cavity including a back gate electrode, a back gate dielectric, a semiconductor channel, and at least one charge storage element. In one embodiment, a line trench can be filled with a memory film layer, and a plurality of semiconductor channels can straddle the line trench. The back gate electrode can extend along the lengthwise direction of the line trench. In another embodiment, an isolated memory opening overlying a patterned conductive layer can be…

Monolithic three-dimensional NAND strings and methods of fabrication thereof

Granted: February 21, 2017
Patent Number: 9576975
A vertically repeating stack of a unit layer stack is formed over a substrate. The unit layer stack includes a sacrificial material layer, a lower silicon oxide material layer, a first silicon oxide material layer, and an upper silicon oxide material layer. A memory opening can be formed through the vertically repeating stack, and a layer stack including a blocking dielectric layer, a memory material layer, a tunneling dielectric, and a semiconductor channel can be formed in the memory…

Front rack cable management system and apparatus

Granted: February 21, 2017
Patent Number: 9578779
Systems, apparatuses and devices are used for front cable management of equipment modules mounted in equipment racks. One aspect is directed to an apparatus for front cable management generally including a cable management device for a rack-mounted equipment module supported in an equipment rack. The cable management device generally includes an articulated arm assembly movable between a retracted operational position and a service position extending forwardly out from the equipment…

In block data folding for 3D non-volatile storage

Granted: February 14, 2017
Patent Number: 9569143
Techniques are disclosed herein for folding data within the same block of memory cells in 3D non-volatile storage. Data is programmed into a first string of memory cells within a block at “n” bits per memory cell. The data is folded to one or more other strings of memory cells in the same block at more than “n” bits per memory cell. For example, the data is folded to a second string at “m” bits per memory cell, where “m”>“n.” The folding operations may be performed…

Storage module and method for regulating garbage collection operations based on write activity of a host

Granted: February 14, 2017
Patent Number: 9569352
A storage module and method for regulating garbage collection operations based on write activity of a host are disclosed. In one embodiment, a storage module determines whether the host is operating in a burst mode by determining whether write activity of the host over a time period exceeds a threshold. The write activity can comprise one or both of (i) an amount of data received from the host to be written in the storage module and (ii) a number of write commands received from the host.…

Non-volatile storage system with defect detetction and early programming termination

Granted: February 14, 2017
Patent Number: 9570160
A non-volatile storage system includes defect detection and early program termination. The system commences programming of a plurality of non-volatile memory cells, determines that a defect condition exists and, in response to determining that the defect condition exists, terminates the programming of the plurality of memory cells prior to completion of programming.

Non-volatile memory with two phased programming

Granted: February 14, 2017
Patent Number: 9570179
Programming non-volatile memory includes applying a series of programming pulses to the memory cells as part of a coarse/fine programming process. Between programming pulses, memory cells in the coarse phase are verified for a coarse phase verify level for a target data state and memory cells in the fine phase are verified for a fine phase verify level for the target data state, both in response to a single reference voltage applied on a common word line. For a memory cell in the coarse…

Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution

Granted: February 14, 2017
Patent Number: 9570184
A system and methods to find the threshold voltage distribution across a set of nonvolatile memory cells, such that embodiments may incorporate this distribution information into calculations that may change the read compare voltages used to read the memory cells, while ensuring adequate separation in read voltage between different data states at which the memory cells may be read.

Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution

Granted: February 14, 2017
Patent Number: 9570185
A system and methods to find the threshold voltage distribution across a set of nonvolatile memory cells, such that embodiments may incorporate this distribution information into calculations that may change the read compare voltages used to read the memory cells, while ensuring adequate separation in read voltage between different data states at which the memory cells may be read.

Metal word lines for three dimensional memory devices

Granted: February 14, 2017
Patent Number: 9570455
A method of making a monolithic three dimensional NAND string including forming a stack of alternating layers of insulating first material and sacrificial second material different from the first material over a major surface of the substrate, forming a front side opening in the stack, forming at least one charge storage region in the front side opening and forming a tunnel dielectric layer over the at least one charge storage region in front side opening. The method also includes…