Multi-chip module power clip
Granted: May 13, 2014
Patent Number:
8723300
The multi-chip leadless module 200 has integrated circuit (IC) 150, dual n-channel mosfet 110, IC leads 210, 211, 212, gate leads 213, 213, and source leads 217-220 encapsulated in resin 250. The IC 150 and the dual n-channel mosfet 110 are mounted face down on the leads. IC leads 210, 211, 212 are made of planar metal and connect, respectively, to the electrodes TEST, VDD and VM on the IC 150 using a flip chip technique to assemble the leads on copper pillars or copper studs.
Die backside standoff structures for semiconductor devices
Granted: May 13, 2014
Patent Number:
8722528
Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be…
Power device with self-aligned source regions
Granted: May 6, 2014
Patent Number:
8716783
A field effect transistor (FET) includes a plurality of trenches extending into a silicon layer, each trench having upper sidewalls that fan out. Contact openings extend into the silicon layer between adjacent trenches such that each trench and an adjacent contact opening form a common upper sidewall portion. Body regions extend between adjacent trenches. Source regions that are self-aligned to corresponding trenches extend in the body regions adjacent opposing sidewalls of each trench,…
Low latency interrupt collector
Granted: April 29, 2014
Patent Number:
8713235
This document provides apparatus and methods for providing low latency response from a processor to the interrupts collected from peripheral devices. In an example, an apparatus can collect interrupt requests from a plurality of peripheral devices, and can communicate interrupt information to a processor. Certain examples can reduce the quantity of processor general purpose inputs and outputs configured to receive the peripheral device interrupts in comparison to systems where the…
Methods and apparatus for voltage selection for a MOSFET switch device
Granted: April 29, 2014
Patent Number:
8710900
In one general aspect, an apparatus including a first voltage rail, and a second voltage rail. The apparatus includes a first P-type metal-oxide-semiconductor field effect transistor (MOSFET) PMOS device between the first voltage rail and the second voltage rail where the first PMOS device is configured to electrically couple the first voltage rail to the second voltage rail in response to the first PMOS device being activated. The apparatus can also include a second PMOS device…
Micromachined devices and fabricating the same
Granted: April 29, 2014
Patent Number:
8710599
Micromachined devices and methods for making the devices. The device includes: a first wafer having at least one via; and a second wafer having a micro-electromechanical-systems (MEMS) layer. The first wafer is bonded to the second wafer. The via forms a closed loop when viewed in a direction normal to the top surface of the first wafer to thereby define an island electrically isolated. The method for fabricating the device includes: providing a first wafer having at least one via;…
FET device having ultra-low on-resistance and low gate charge
Granted: April 29, 2014
Patent Number:
8710584
A metal-oxide-semiconductor field effect transistor (MOSFET) includes a substrate, the substrate being heavily doped and of a first conductivity type, a substrate cap region disposed on the substrate, the substrate cap region being heavily doped and of the first conductivity type and a body region disposed on the substrate cap region, the body region being lightly doped and of a second conductivity type. The MOSFET also includes a trench extending into the body region, a source region of…
Devices, methods, and systems with MOS-gated trench-to-trench lateral current flow
Granted: April 22, 2014
Patent Number:
8704301
A DMOS transistor is fabricated with its source/body/deep body regions formed on the walls of a first set of trenches, and its drain regions formed on the walls of a different set of trenches. A gate region that is formed in a yet another set of trenches can be biased to allow carriers to flow from the source to the drain. Lateral current low from source/body regions on trench walls increases the active channel perimeter to a value well above the amount that would be present if the…
MIPI analog switch for automatic selection of multiple image sensors
Granted: April 22, 2014
Patent Number:
8704552
An MIPI interface is connected to two sensor sources that each may be transferring both high and low speed information, typically video information in the high speed state. The clock signals are monitored and when one of the clock signals exceed a threshold, an analog switch between the MIPI interface and the sensors, may connect the other source to the MIPI interface.
Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof
Granted: April 22, 2014
Patent Number:
8704546
A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT are provided. The SiC BJT comprises an emitter region, a base region and a collector region. The collector region is arranged on a substrate having an off-axis orientation of about 4 degrees or lower. Further, a defect termination layer (DTL) is arranged between the substrate and the collector region. A thickness and a doping level of the DTL are configured to terminate basal plane…
Trench junction field-effect transistor
Granted: April 22, 2014
Patent Number:
8704296
In a general aspect, a semiconductor device can include a gate having a first trench portion disposed within a first trench of a junction field-effect transistor device, a second trench portion disposed within a second trench of the junction field-effect transistor device, and a top portion coupled to both the first trench portion and to the second trench portion. The semiconductor device can include a mesa region disposed between the first trench and the second trench, and including a…
Audio amplifier performance while maintaining USB compliance and power down protection
Granted: April 15, 2014
Patent Number:
8699717
An apparatus comprises a first audio amplifier circuit configured to provide an analog audio signal and an analog switch circuit including a first input configured to receive the analog audio signal, a second input configured to receive a first digital data signal, and a first output configured to provide one of the digital data signal or the analog audio signal. The apparatus also includes a first feedback circuit coupled to the first audio amplifier circuit and the analog switch…
Methods and apparatus for oscillator frequency calibration
Granted: April 8, 2014
Patent Number:
8692621
In one general aspect, an apparatus can include a phase frequency detector configured to produce a plurality of indicators of relative differences between a frequency of a target oscillator signal and a frequency of a reference oscillator signal. The apparatus can also include a pulse generator configured to produce a plurality of pulses based on the plurality of indicators. The plurality of pulses can include a first portion configured to trigger an increase in the frequency of the…
High density FET with integrated Schottky
Granted: April 1, 2014
Patent Number:
8686493
A semiconductor structure includes a monolithically integrated trench FET and Schottky diode. The semiconductor structure further includes a plurality of trenches extending into a semiconductor region. A stack of gate and shield electrodes are disposed in each trench. Body regions extend over the semiconductor region between adjacent trenches, with a source region extending over each body region. A recess having tapered edges extends between every two adjacent trenches from upper corners…
Mobile device auto detection apparatus and method
Granted: March 25, 2014
Patent Number:
8683087
This application discusses, among other things, multiple interface detection circuits configured to connect with a mobile electronic device connector. In an example, a multiple interface detection circuit can include a first comparator to compare a bus voltage of the mobile electronic device connector with a first threshold and to provide a first control signal, a second comparator to compare the bus voltage of the mobile electronic device connector with the first threshold and to…
Field effect transistor and schottky diode structures
Granted: March 25, 2014
Patent Number:
8680611
In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first…
Semiconductor die package including IC driver and bridge
Granted: March 18, 2014
Patent Number:
8674490
A semiconductor die package. Embodiments of the semiconductor die package are usable in backlight circuitry. Systems in packages may include a bridge circuit or a part thereof, and a integrated circuit die, such as a driver die, encapsulated by a molding material or other package. The bridge circuit may be stacked on opposing surfaces of a leadframe.
Superjunction structures for power devices and methods of manufacture
Granted: March 18, 2014
Patent Number:
8673700
A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the…
Structure related to a thick bottom dielectric (TBD) for trench-gate devices
Granted: March 11, 2014
Patent Number:
8669623
A semiconductor structure which includes a shielded gate FET is formed as follows. A plurality of trenches is formed in a semiconductor region using a mask. The mask includes (i) a first insulating layer over a surface of the semiconductor region, (ii) a first oxidation barrier layer over the first insulating layer, and (iii) a second insulating layer over the first oxidation barrier layer. A shield dielectric is formed extending along at least lower sidewalls of each trench. A thick…
Semiconductor die package and method for making the same
Granted: March 4, 2014
Patent Number:
8664752
Semiconductor die packages are disclosed. An exemplary semiconductor die package includes a premolded substrate. The premolded substrate can have a semiconductor die attached to it, and an encapsulating material may be disposed over the semiconductor die.
