Peak current control circuit for switching mode power supply and method thereof
Granted: June 10, 2014
Patent Number:
8749997
A switching mode power supply with improved peak current control is disclosed. A varying reference signal is adopted to limit the peak current in the energy storage component. The varying reference signal is an exponential function of a time period when a power switch is ON, wherein the power switch is coupled to the energy storage component. The varying reference signal may be generated by a circuit comprising a RC circuit and one or several voltage sources.
Constant on-time converter with stabilizing operation and method thereof
Granted: June 10, 2014
Patent Number:
8749216
A constant on-time converter has an input terminal, an output terminal, a feedback circuit, an operating circuit, a comparison circuit, a timer, a driving circuit and a switching circuit. The operating circuit is coupled to a compensation signal adjusted by a digital controller, and the compensation signal rises up to a predetermined amplitude when a feedback signal is less than a reference signal.
Schottky diodes with dual guard ring regions and associated methods
Granted: June 10, 2014
Patent Number:
8749014
The present invention discloses a Schottky diode. The Schottky diode comprises a cathode region, an anode region and a guard ring region. The anode region may comprise a metal Schottky contact. The guard ring region may comprise an outer guard ring and a plurality of inner guard stripes inside the outer guard ring. And wherein the inner guard stripe has a shallower junction depth than the outer guard ring.
Vertical power transistor die packages and associated methods of manufacturing
Granted: June 3, 2014
Patent Number:
8742490
The present technology is directed generally to a semiconductor device. In one embodiment, the semiconductor device includes a first vertical transistor and a second vertical transistor, and the first vertical transistor is stacked on top of the second vertical transistor. The first vertical transistor is mounted on a lead frame with the source electrode of the first vertical transistor coupled to the lead frame. The second vertical transistor is stacked on the first vertical transistor…
Drive and control circuit for motor system and the method thereof
Granted: May 27, 2014
Patent Number:
8736209
A drive and control circuit for motor system and the method thereof are disclosed. The motor system could be applied in a cooling device, wherein the motor system comprises a rotor, a coil and a bridge circuit. The drive and control circuit comprises a control unit, a state detecting circuit, a load determining circuit, and a startup setting circuit. The startup setting circuit makes the motor run with the maximum torque, thus to make the motor system start up easily and quickly. The…
Trench-gate MOSFET device and method for making the same
Granted: May 27, 2014
Patent Number:
8735973
The embodiments of the present disclosure disclose a trench-gate MOSFET device and the method for making the trench-gate MOSFET device. The trench-gate MOSFET device comprises a curving dopant profile formed between the body region and the epitaxial layer so that the portion of the body region under the source metal contact has a smaller vertical thickness than the other portion of the body region. The trench-gate MOSFET device in accordance with the embodiments of the present disclosure…
Integrated MOSFET devices with Schottky diodes and associated methods of manufacturing
Granted: May 27, 2014
Patent Number:
8735968
The present technology discloses a semiconductor die integrating a MOSFET device and a Schottky diode. The semiconductor die comprises a MOSFET area comprising the active region of MOSFET, a Schottky diode area comprising the active region of Schottky diode, and a termination area comprising termination structures. Wherein the Schottky diode area is placed between the MOSFET area and the termination area such that the Schottky diode area surrounds the MOSFET area.
Integrated field effect transistors with high voltage drain sensing
Granted: May 13, 2014
Patent Number:
8723178
An integrated circuit includes a junction field effect transistor (JFET) and a power metal oxide semiconductor field effect transistor (MOSFET) on a same substrate. The integrated circuit includes a drain sense terminal for sensing the drain of the power MOSFET through the JFET. The JFET protects a controller or other electrical circuit coupled to the drain sense terminal from high voltage that may be present on the drain of the power MOSFET. The JFET and the power MOSFET share a same…
Semiconductor device and associated fabrication method
Granted: May 6, 2014
Patent Number:
8716784
A semiconductor device and a method for forming the semiconductor device wherein the semiconductor comprises: a trench MOSFET, formed on a semiconductor initial layer, comprising a well region, wherein the semiconductor initial layer has a first conductivity type and wherein the well region has a second conductivity type; an integrated Schottky diode next to the trench MOSFET, comprising a anode metal layer contacted to the semiconductor initial layer; a trench isolation structure,…
Constant on-time converter and control method thereof
Granted: May 6, 2014
Patent Number:
8717002
A constant ON-time converter is disclosed. The constant ON-time converter comprises a feedback circuit, a slope compensation circuit and a buffer circuit. The feedback signal comprises an output configured to provide a feedback signal indicating an output voltage of the constant ON-time converter. The slope compensation circuit comprises an output configured to provide a slope compensation signal. The buffer circuit is coupled between the output of the feedback circuit and the output of…
Switching-mode power supply with ripple mode control and associated methods
Granted: April 15, 2014
Patent Number:
8698475
The present invention discloses a SMPS. The SMPS comprises an output port, configured to supply a load; a control signal generator, having an input and an output configured to provide a first control signal; a first switch configured to receive the first control signal and regulate the voltage at the output port; and a ramp signal generator, comprising an input and an output, wherein the input is configured to receive the control signal and the output is configured to provide a current…
Power supply, associated management unit and method
Granted: April 8, 2014
Patent Number:
8693276
The present invention discloses a power supply. The power supply may comprise an input power terminal, a capacitor module, a first converter module and a second converter module. The first converter module may have a first terminal and a second terminal, wherein the first terminal is coupled to the input power terminal and the second terminal is coupled to the capacitor module. The second converter module may comprise an input and an output, wherein the input of the second converter…
Quasi-resonant controlled switching regulator and the method thereof
Granted: April 1, 2014
Patent Number:
8687387
A frequency limitation method used in a quasi-resonant controlled switching regulator is disclosed. The switching frequency is limited by setting a minimum time period, such as a minimum switching period or a minimum OFF time period. The minimum time period is varying according to the difference between the minimum time period of the previous cycle and an offset value, so as to eliminate the audible noise caused by the frequency hopping when the minimum OFF time period is close to the…
Switching power supply with fixed off time mode and control method thereof
Granted: April 1, 2014
Patent Number:
8686703
The present invention provides a controller used in a switching power supply. The controller comprises an oscillator, a first comparison circuit and a logic circuit. The oscillator generates a slope compensation signal and a clock signal. The first comparison circuit generates a first comparison signal in accordance with a current sensing signal, a feedback signal and the slope compensation signal. The logic circuit generates a control signal to control the main switch based on the clock…
Lateral high-voltage transistor and associated method for manufacturing
Granted: April 1, 2014
Patent Number:
8686503
The present disclosure discloses a lateral high-voltage transistor and associated method for making the same. The lateral high-voltage transistor comprises a semiconductor layer of a first conductivity type; a source region of a second conductivity type opposite to the first conductivity type in the semiconductor layer; a drain region of the second conductivity type in the semiconductor layer separated from the source region; a first isolation layer atop the semiconductor layer between…
Split trench-gate MOSFET with integrated Schottky diode
Granted: March 25, 2014
Patent Number:
8680614
A split trench-gate MOSFET device and method for forming this device is disclosed. The device has a trench gate structure, comprising a shield electrode and two gate electrodes, wherein a substantial portion of shield electrode region is lower than the gate electrode region, and wherein a portion of the shield electrode region extends to the top surface between the two gate electrodes. The device further comprises a source metal layer, contacting to an initial layer, a well region, the…
High-voltage devices with integrated over-voltage protection and associated methods
Granted: March 11, 2014
Patent Number:
8670219
The present technology discloses a high-voltage device comprising a high-voltage transistor and an integrated over-voltage protection circuit. The over-voltage protection circuit monitors a voltage across the high-voltage transistor to detect an over-voltage condition of the high-voltage transistor, and turns the high-voltage transistor ON when the over-voltage condition is detected. Thus, once the high-voltage transistor is in over-voltage condition, the high-voltage transistor is…
CMOS devices with reduced short channel effects
Granted: March 4, 2014
Patent Number:
8664067
An MOS transistor includes a doping profile that selectively increases the dopant concentration of the body region. The doping profile has a shallow portion that increases the dopant concentration of the body region just under the surface of the transistor under the gate, and a deep portion that increases the dopant concentration of the body region under the source and drain regions. The doping profile may be formed by implanting dopants through the gate, source region, and drain region.…
Switching mode power supply and the method thereof
Granted: February 4, 2014
Patent Number:
8643351
The present disclosure discloses a switching mode power supply with bi-direction buck and boost control. The switching mode power supply enters boost mode when an input signal is higher than a preset threshold to pump the input signal to a higher level; and the switching mode power supply enters buck mode when the input signal breaks down to release the stored energy.
Power system with hot-swap and the method thereof
Granted: February 4, 2014
Patent Number:
8645753
The present disclosure discloses a power system with hot-swap with a buck converter. The power system comprises a front stage, a hot-swap stage and a load stage; wherein the hot-swap stage comprises: a buck converter having a switch operate at ON/OFF state to provide a desired output voltage to the load stage with low power loss and optimized thermal design.
