Omnivision Technologies Patent Applications

CMOS Image Sensor Pixel for High Dynamic Range Capturing

Granted: June 29, 2023
Application Number: 20230207584
An image sensor element includes a transfer transistor TX, a LOFIC select transistor LF, a photodiode PD, and a first overflow path OFP. The transfer transistor TX outputs a readout signal from a first end. The LOFIC select transistor LF includes a first end connected to a second end of the transfer transistor TX, and a second end connected to a capacitor. The photodiode PD is connected in common to a third end of the transfer transistor and a third end of the LOFIC select transistor LF.…

Image Sensor and Method for Reading Out Signal of Image Sensor

Granted: June 22, 2023
Application Number: 20230199341
An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor…

Differential Subrange ADC for Image Sensor

Granted: June 8, 2023
Application Number: 20230179889
A differential subrange analog-to-digital converter (ADC) converts differential analog image signals received from sample and hold circuits to a digital signal through an ADC comparator. The comparator of the differential subrange ADC is shared by a successive approximation register (SAR) ADC coupled to provide both M upper output bits (UOB) and a ramp ADC coupled to provide N lower output bits (LOB). Digital-to-analog converters (DACs) of the differential subrange SAR ADC comprises 2M…

DAM OF IMAGE SENSOR MODULE HAVING SAWTOOTH PATTERN AND INCLINED SURFACE ON ITS INNER WALL AND METHOD OF MAKING SAME

Granted: March 9, 2023
Application Number: 20230076598
An image sensor module comprises an image sensor having a light sensing area, a cover glass for covering the light sensing area, a dam between the image sensor and the cover glass, which surrounds the light sensing area, and has an outer wall and an inner wall, where a cross-section of the inner wall parallel to the surface of the light sensing area of the image sensor forms a sawtooth pattern and/or, where a cross-section of the inner wall orthogonal to the surface of the light sensing…

IMAGE SENSOR WITH VARYING DEPTH DEEP TRENCH ISOLATION STRUCTURE FOR REDUCED CROSSTALK

Granted: March 2, 2023
Application Number: 20230067975
An image sensor comprises a first photodiode, a second photodiode, and a deep trench isolation structure. The first photodiode and the second photodiode are each disposed within a semiconductor substrate. The first photodiode is adjacent to the second photodiode. The deep trench isolation structure has a varying depth disposed within the semiconductor substrate between the first photodiode and the second photodiode. The DTI structure extends the varying depth from a first side of the…

REFERENCE CLOCK COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) INPUT BUFFER WITH SELF-CALIBRATION AND IMPROVED ELECTROSTATIC DISCHARGE (ESD) PERFORMANCE

Granted: March 2, 2023
Application Number: 20230062619
Reference clock CMOS input buffer with self-calibration and improved ESD performance. In one embodiment, a reference clock input buffer of an image sensor includes a Schmitt trigger configured to generate a clock signal having a falling edge and a rising edge. The falling edge and the rising edge are separated by a hysteresis voltage. The Schmitt trigger includes a plurality of output switches and a plurality of voltage control switches that are individually coupled to individual output…

High Dynamic Range Image Sensor Having Reduced Crosstalk and Jaggy

Granted: January 12, 2023
Application Number: 20230010935
An image sensor has a plurality of pixels arranged in a row direction and in a column direction. Each pixel comprises a color filter that has a portion with a low transmissivity and a portion with a high transmissivity, and a photoelectric conversion element that includes a first photoelectric conversion cell which receives light transmitting through the portion with the low transmissivity of the color filter, and a second photoelectric conversion cell which receives light transmitting…

High Dynamic Range Image Sensor Having Reduced Crosstalk and Jaggy

Granted: January 12, 2023
Application Number: 20230010935
An image sensor has a plurality of pixels arranged in a row direction and in a column direction. Each pixel comprises a color filter that has a portion with a low transmissivity and a portion with a high transmissivity, and a photoelectric conversion element that includes a first photoelectric conversion cell which receives light transmitting through the portion with the low transmissivity of the color filter, and a second photoelectric conversion cell which receives light transmitting…

PYRAMID-SHAPED TRANSISTORS

Granted: November 24, 2022
Application Number: 20220376068
Transistors include a pyramid-shaped gate trench defined by a triangular shape or a trapezoidal shape in a channel width plane and a trapezoidal shape in a channel length plane. Side wall portions of the pyramid-shaped gate trench form a channel having a triangular shape or a trapezoidal shape in the channel width plane. Advantageously, such transistors increase transconductance without increasing pixel width. Devices, image sensors, and pixels incorporating such transistors are also…

UNIFORM THRESHOLD VOLTAGE NON-PLANAR TRANSISTORS

Granted: November 24, 2022
Application Number: 20220376069
Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

UNIFORM THRESHOLD VOLTAGE NON-PLANAR TRANSISTORS

Granted: November 24, 2022
Application Number: 20220375977
Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

FULLY BURIED COLOR FILTER ARRAY OF IMAGE SENSOR

Granted: April 14, 2022
Application Number: 20220116516
An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.

TRANSISTORS HAVING INCREASED EFFECTIVE CHANNEL WIDTH

Granted: September 30, 2021
Application Number: 20210305299
Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. The transistor includes a nonplanar structure disposed in the semiconductor substrate, which is bounded by two outer trench structures formed in the semiconductor substrate. Isolation deposits are disposed within the two outer trench structures formed in the semiconductor substrate. A gate includes a planar gate and two fingers extending into one of two inner…

TRANSISTORS HAVING INCREASED EFFECTIVE CHANNEL WIDTH

Granted: September 30, 2021
Application Number: 20210305298
Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. At least three substrate trench structures are formed in the semiconductor substrate, defining two nonplanar structures, each having a plurality of sidewall portions. An isolation layer includes at least three isolation layer trench structures, each being disposed in a respective one of the three substrate trench structures. A gate includes three fingers, each…

MEDICAL MICRO-CABLE STRUCTURE AND CONNECTION METHOD WITH MINI CAMERA CUBE CHIP

Granted: August 26, 2021
Application Number: 20210259528
A novel endoscope includes a camera module, an electrical cable, and an electrical connector. The camera module includes an analog image signal output terminal. The cable includes an analog image signal line having a first end connected to the analog image signal output terminal of the camera module. The electrical connector includes a set of electrical contacts configured to engage a complimentary set of electrical contacts of a host system. The set of electrical contacts includes at…

Image Sensor With Voltage Buffer For Self-Test

Granted: August 19, 2021
Application Number: 20210258563
A test voltage sample and hold circuitry is disclosed in a readout circuitry of an image sensor. This circuitry samples a voltage at demand value based on a ramp voltage shared by the ADC comparators of the readout circuitry. The value of the sampled voltage is controlled by a control circuitry which is able to predict and calculate at what time a ramp generator may carry the demand voltage value. The sampled voltage is held by a hold capacitor during readout of one row and is accessed…

DAM OF IMAGE SENSOR MODULE HAVING SAWTOOTH PATTERN AND INCLINED SURFACE ON ITS INNER WALL AND METHOD OF MAKING SAME

Granted: July 22, 2021
Application Number: 20210225914
An image sensor module comprises an image sensor having a light sensing area, a cover glass for covering the light sensing area, a dam between the image sensor and the cover glass, which surrounds the light sensing area, and has an outer wall and an inner wall, where a cross-section of the inner wall parallel to the surface of the light sensing area of the image sensor forms a sawtooth pattern and/or, where a cross-section of the inner wall orthogonal to the surface of the light sensing…

Determining Depth Information From A Single Camera

Granted: June 10, 2021
Application Number: 20210176447
An optical system comprises an imaging lens for imaging an object to an image and a sensing pixel array for detecting lights from the object toward the image. The sensing pixel array comprises a first sensing pixel and a second sensing pixel, each sensing pixel comprising a microlens covering a one-dimensional series of photodiodes having n photodiodes. A photodiode at an end of the one-dimensional series of photodiodes of the first sensing pixel detects a first light from the object…

Subrange ADC for Image Sensor

Granted: April 8, 2021
Application Number: 20210105422
A subrange analog-to-digital converter (ADC) converts analog image signal received from a bitline to a digital signal through an ADC comparator. The comparator is shared by a successive approximation register (SAR) ADC coupled to provide M upper output bits (UOB) of the subrange ADC and a ramp ADC coupled to provide N lower output bits (LOB). The digital-to-analog converter (DAC) of the SAR ADC comprises M buffered bit capacitors connected to the comparator. Each buffered bit capacitor…

VERSATILE IMAGE SENSOR CIRCUIT

Granted: March 4, 2021
Application Number: 20210067714
A photodiode array circuit includes a plurality of photodiode circuits, binning circuitry, and a plurality of output circuits. Each of the plurality of photodiode circuits is coupled to receive a different one of the plurality of transfer control signals as a proximate photodiode circuit, proximate in a first direction. The binning circuitry is coupled to electrically connect the plurality of photodiode circuits into groups of photodiode circuit sense nodes in response to a binning…