HIGH DYNAMIC RANGE IMAGE SENSOR WITH FULL RESOLUTION RECOVERY
Granted: November 20, 2014
Application Number:
20140340553
A method of reading pixel data from a pixel array includes exposing each one of a plurality of regions of pixels a respective exposure time. Pixel data is read from the plurality of regions of pixels. The pixel data is interpolated from a first one of the plurality of regions of pixels to determine the pixel data of the regions of pixels other than the first one of the plurality of regions of pixels to generate a first image having the first exposure time. The pixel data is interpolated…
On-Line Memory Testing Systems And Methods
Granted: November 13, 2014
Application Number:
20140337669
A method for testing an electronic memory while the memory is in use includes: (a) detecting an access to the electronic memory at a test address, (b) saving, in a register subsystem, write data written to the electronic memory at a location corresponding to the test address, (c) comparing the write data to data read from the electronic memory at the location corresponding to the test address to determine whether the memory has a fault, and (d) generating an error signal if the memory…
FIVE-ASPHERIC-SURFACE WAFER-LEVEL LENS SYSTEMS HAVING WIDE VIEWING ANGLE
Granted: November 13, 2014
Application Number:
20140334016
A wafer-level lens system includes a first substrate, a first lens having a planar surface in contact with the first substrate and a concave aspheric surface, a second substrate, a second lens having a convex aspheric surface facing the first lens and a planar surface in contact with the second substrate, a third lens having a planar surface in contact with the second substrate and a concave aspheric surface, a third substrate, a fourth lens having a convex aspheric surface facing the…
INTEGRATED CIRCUIT STACK WITH LOW PROFILE CONTACTS
Granted: November 6, 2014
Application Number:
20140326856
An integrated circuit system includes first and second device wafers, each having lateral sides along which a plurality of T-contacts are disposed. The first and second device wafers are stacked together and the lateral sides of the first and second device wafers are aligned such that each one of the plurality of T-contacts of the first device wafer is coupled to a corresponding one of the plurality of T-contacts of the second device wafer. A plurality of solder balls are attached to the…
SYSTEMS AND METHODS FOR CALIBRATION OF A 360 DEGREE CAMERA SYSTEM
Granted: October 9, 2014
Application Number:
20140300754
Systems and methods for calibrating a 360 degree camera system include imaging reference strips, analyzing the imaged data to correct for pitch, roll, and yaw of cameras of the 360 degree camera system, and analyzing the image data to correct for zoom and shifting of the cameras. Each of the reference strips may include a bullseye component and a dots component to aid in the analyzing and correcting.
IMAGE SENSOR HAVING METAL CONTACT COUPLED THROUGH A CONTACT ETCH STOP LAYER WITH AN ISOLATION REGION
Granted: October 9, 2014
Application Number:
20140299957
An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more…
LAYERS FOR INCREASING PERFORMANCE IN IMAGE SENSORS
Granted: October 9, 2014
Application Number:
20140299956
An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the…
CMOS IMAGE SENSOR WITH RESET SHIELD LINE
Granted: October 9, 2014
Application Number:
20140299925
Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor…
ENHANCED PHOTON DETECTION DEVICE WITH BIASED DEEP TRENCH ISOLATION
Granted: October 2, 2014
Application Number:
20140291481
A photon detection device includes a photodiode having a planar junction disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a dielectric layer lining an inside surface of the DTI…
IMAGE SENSOR WITH SUBSTRATE NOISE ISOLATION
Granted: September 18, 2014
Application Number:
20140267860
A process including forming an a backside-illuminated (BSI) image sensor in a substrate, the image sensor including a pixel array formed in or near a front surface of the substrate and one or more circuit blocks formed in the substrate near the pixel array, each circuit block including at least one support circuit. An interconnect layer is formed on the front surface of the substrate that includes a dielectric within which are embedded traces and vias, wherein the traces and vias…
IMAGE SENSOR WITH PIXELS HAVING INCREASED OPTICAL CROSSTALK
Granted: September 18, 2014
Application Number:
20140267848
An image sensor includes a first pixel and a second pixel. The first pixel includes a first light sensitive element, a first light filter, and a first microlens. The second pixel is disposed adjacent to the first pixel and includes a second light sensitive element, a second light filter, and a second microlens. The first pixel is configured to direct at least some of the light received at the first microlens to the second light sensitive element of the second pixel to increase optical…
Apparatus And Method For Automated Self-Training Of White Balance By Electronic Cameras
Granted: September 18, 2014
Application Number:
20140267782
A method for calibrating auto white balancing in an electronic camera includes (a) obtaining a plurality of color values from a respective plurality of images of real-life scenes captured by the electronic camera under a first illuminant, (b) invoking an assumption about a true color value of at least portions of the real-life scenes, and (c) determining, based upon the difference between the true color value and the average of the color values, a plurality of final auto white balance…
Information Technology Device Input Systems And Associated Methods
Granted: September 18, 2014
Application Number:
20140267033
A method for generating a control signal to control an information technology device includes the following steps: (1) capturing, using an image sensor, a current control image of a light source of a remote controller positioned within a field of view of the image sensor; (2) identifying, within the current control image, a current location of light emitted from the light source; (3) determining movement between (a) the current location of the light emitted from the light source and (b)…
HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF PHOTODIODES WITH A SINGLE IMPLANT
Granted: September 4, 2014
Application Number:
20140246561
A high dynamic range image sensor pixel includes a short integration photodiode and a long integration photodiode disposed in semiconductor material. The long integration photodiode has a light exposure area that is substantially larger than a light exposure area of the short integration photodiode. The light exposure area of the short integration photodiode has a first doping concentration from a first doping implantation. The light exposure area of the long integration photodiode…
Apparatus And Method For Level-Based Self-Adjusting Peer-to-Peer Media Streaming
Granted: August 28, 2014
Application Number:
20140244763
An apparatus and method for media streaming in a peer-to-peer (P2P) network having a plurality of peer modules connected on the network include a source peer module connected on the network, the source peer module being associated with a highest logical level of the network. A plurality of viewer peer modules is also connected on the network, each viewer peer module being associated with a logical network level. The logical network level associated with each viewer peer module is a…
PROCESS TO ELIMINATE LAG IN PIXELS HAVING A PLASMA-DOPED PINNING LAYER
Granted: August 28, 2014
Application Number:
20140239351
Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of…
HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF AMPLIFIER TRANSISTORS
Granted: August 28, 2014
Application Number:
20140239154
A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first…
IMAGE SENSOR WITH PIXEL UNITS HAVING MIRRORED TRANSISTOR LAYOUT
Granted: August 28, 2014
Application Number:
20140239152
An image sensor includes a first pixel unit horizontally adjacent to a second pixel unit. Each pixel unit includes plurality of photodiodes and a shared floating diffusion region. A first pixel transistor region of the first pixel unit has a plurality of pixel transistors. A second pixel transistor region of the second pixel unit is horizontally adjacent to the first pixel transistor region and also has a plurality of pixel transistors. A transistor layout of the second pixel transistor…
IMAGE SENSOR AND COLOR FILTER ARRAY INCLUDING MULTIPLE SELECTABLE MESHED FILTER SETS
Granted: August 21, 2014
Application Number:
20140231621
An apparatus including a pixel array including a plurality of pixels and a filter array positioned over the pixel array, the color filter array comprising a plurality of tiled minimal repeating units, each minimal repeating unit including a plurality of enmeshed filter sets, each filter set including a different set of colors than any other filter set in the filter array. Other embodiments are disclosed and claimed.
SYNCHRONIZATION OF IMAGE ACQUISITION IN MULTIPLE IMAGE SENSORS WITH A SYNCHRONIZATION CLOCK SIGNAL
Granted: August 14, 2014
Application Number:
20140225998
A multiple image sensor image acquisition system includes a clock control unit to generate a synchronization clock signal. The synchronization clock signal has a prolonged constant cycle during which the synchronization clock signal is held at a constant level for a period of time corresponding to multiple clock cycles. A first image sensor is coupled with the clock control unit to receive the synchronization clock signal and has a first synchronization unit that is operable to…
