Semiconductor laser and optical module
Granted: March 10, 2009
Patent Number:
7502403
In a horizontal cavity surface emitted laser, there is provided a device structure that is capable of obtaining a circular narrow-divergence emitted beam that is high in the optical coupling efficiency with a fiber. As a first means, there is provided a horizontal cavity surface emitting laser having a structure in which the plane mirror that is inclined by 45° and the bottom lens of the oval configuration are integrally structured. As a second means, there is provided a horizontal…
Optical receiver module and optical receiver module system
Granted: December 16, 2008
Patent Number:
7466930
A relation between a light input power monitor value of an optical transmission signal before passing through a fiber and an input signal amplitude monitor value is recorded in advance in a storage device. Next, actual optical-transmission-waveform is inputted into an optical receiver module, and then comparisons between a light input power monitor value and an input signal amplitude monitor value, and respective monitor values in the case without having the waveform distortion as…
Optical semiconductor device, manufacturing method therefor, and optical semiconductor apparatus
Granted: December 9, 2008
Patent Number:
7463662
A highly reliable optical semiconductor device insusceptible to degradation in the characteristics thereof. An n-type buffer layer, n-type first cladding layer, active layer, a p-type first layer of the second cladding layer, p-type etch-stop layer, p-type second layer of the second cladding layer, and p-type contact layer are formed an n-type semiconductor substrate. Two lengths of separation grooves are formed in parallel in such a way as to reach the underside of the p-type second…
Semiconductor laser diode and integrated semiconductor optical waveguide device
Granted: December 9, 2008
Patent Number:
7463663
A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion…
Polishing method for semiconductor substrate, and polishing jig used therein
Granted: December 2, 2008
Patent Number:
7459397
During the polishing of a semiconductor substrate, the semiconductor wafer that has been reduced in thickness, and hence in strength, by polishing, suffers outer-surface damage (or cracking) due to the initial damage caused by the use of polishing quartz. In order to solve these problems, the present invention applies a semiconductor substrate fixing jig formed with, on the face for fixing the semiconductor substrate, a groove(s) of almost the same diameter as that of the semiconductor…
Opto-semiconductor devices
Granted: October 28, 2008
Patent Number:
7443901
An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for…
Avalanche photodiode
Granted: September 9, 2008
Patent Number:
7422919
An avalanche photodiode includes at least one crystal layer having a larger band-gap than that of an absorption layer formed by a composition or material different from that of the absorption layer formed on a junction interface between a compound semiconductor absorbing an optical signal and an Si multiplication layer, and the crystal layer may be intentionally doped with n or p type impurities to cancel electrical influences of the impurities containing oxides present on the junction…
Photodetector module with impedance matching
Granted: August 12, 2008
Patent Number:
7411179
A photodetector module that can achieve impedance matching and power saving. A photodetector (11) and an amplifier (12) for amplifying an electric signal from the photodetector (11) are mounted on a stem (14). A dielectric plate (18) is arranged between the stem (14) and a flexible substrate (20). To transfer an electric signal from the amplifier (12) to the substrate (20), a lead pin (15d) is provided to pass through the stem (14) and the dielectric plate (18). The output of the…
Optical module and optical transmission apparatus
Granted: August 12, 2008
Patent Number:
7412120
The present invention provides a structure that makes high-frequency transmission possible in an optical module and in the optical transmission apparatus using the module. The invention has means that excludes, from the service band of the optical module, frequency of the standing waves occurring at connection between the first high-frequency signal line substrate and second high-frequency signal line substrate in the optical module.
Semiconductor electro-absorption optical modulator, semiconductor electro-absorption optical modulator integrated laser, optical transmitter module and optical module
Granted: August 5, 2008
Patent Number:
7409113
This invention provides an optical transmitter module and an optical module using an EA modulator capable of realizing stable ACER regardless of operating temperature without using a control mechanism for maintaining temperature of the EA modulator constant. In the EA modulator, optical waveguides formed of a multi-layered film are formed on a substrate, an electrical signal is applied to the optical waveguides in a direction vertical to the substrate, and the input light absorption…
Semiconductor element mounting board and optical transmission module
Granted: July 15, 2008
Patent Number:
7400791
An optical transmission module of the invention uses a semiconductor chip forming an optical modulator integrated laser on a semi-insulating semiconductor board. An input transfer line and an anode electrode of an optical modulator element are connected by a first bonding wire. The anode electrode of the optical modulator element and one of the ends of a terminal resistor element are connected by a second bonding wire. A cathode electrode of the optical modulator element and the other…
Grating based multiplexer/demultiplexer component
Granted: July 8, 2008
Patent Number:
7397988
A grating based demultiplexer module is described. The module includes an integrally formed first section, second section, and third section. The first section includes a diffraction grating formed on the surface of the first section and directs a WDM beam onto the internal surface of the diffraction grating. The third section is positioned to receive angularly separated light from the external surface of the diffraction grating. In some embodiments, the third section can direct…
Optical modulator module
Granted: June 24, 2008
Patent Number:
7391099
A high frequency substrate, on which a high frequency substrate transmission line for connecting a chip carrier transmission line and a package substrate transmission line is formed, is mounted while being inclined with respect to a package, so that each distance between the transmission lines can be reduced. Thereby, the lengths of wires for connecting the transmission lines can be reduced so as to improve frequency characteristics of an optical modulator module.
Nitride semiconductor based light-emitting device and manufacturing method thereof
Granted: April 29, 2008
Patent Number:
7364929
An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof. A first metal film is formed on a P-type conductive nitride semiconductor formed on a substrate, and then, a film (WOx) made of tungsten oxide is formed in superimposition, followed by annealing.
Grating based multiplexer/demultiplexer component
Granted: March 25, 2008
Patent Number:
7349597
A grating based demultiplexer module is described. The module includes an integrally formed first section, second section, and third section. The first section includes a diffraction grating formed on the surface of the first section and directs a WDM beam onto the internal surface of the diffraction grating. The third section is positioned to receive angularly separated light from the external surface of the diffraction grating. In some embodiments,the third section can direct…
Integrated optoelectronic device and method of fabricating the same
Granted: March 4, 2008
Patent Number:
7340142
An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs…
Semiconductor laser device and semiconductor optical modulator
Granted: February 12, 2008
Patent Number:
7329894
Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics. According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of…
Optical device module, optical transmitter and receiver, and optical receptacle
Granted: January 29, 2008
Patent Number:
7322752
An optical device module includes a stub ferrule for guiding a laser light to an optical fiber to be connected, a sleeve for holding an optical-connector ferrule of the optical fiber to be connected and the stub ferrule, a holder for fixing the stub ferrule and the sleeve, and an adapter for connecting the holder and an optical module, in which the sleeve is formed by a nonmetallic material, reducing the structure of metal portion and restraining the antenna effect when electromagnetic…
Optical communication device, optical transmitter, optical transmitter-receiver, and optical transmission system
Granted: December 25, 2007
Patent Number:
7313331
The printed circuit board with the respective components of the optical transmitter-receiver mounted thereon is split into several parts, the fixing position of which respective parts with regard to the housing is set according to the standardized size of the respective components and which respective parts are interconnected through an electric connector and so forth, which makes the height of the transmitter-receiver lower. The split circuit boards are overlapped such that they make no…
Semiconductor laser, manufacturing the same and semiconductor laser device
Granted: December 18, 2007
Patent Number:
7309879
A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein…
