Gate pullback at ends of high-voltage vertical transistor structure
Granted: August 21, 2008
Application Number:
20080197418
In one embodiment, a transistor includes a pillar of semiconductor material arranged in a racetrack-shaped layout having a substantially linear section that extends in a first lateral direction and rounded sections at each end of the substantially linear section. First and second dielectric regions are disposed on opposite sides of the pillar. First and second field plates are respectively disposed in the first and second dielectric regions. First and second gate members respectively…
Segmented pillar layout for a high-voltage vertical transistor
Granted: August 21, 2008
Application Number:
20080197417
In one embodiment, a transistor fabricated on a semiconductor die includes a first section of transistor segments disposed in a first area of the semiconductor die, and a second section of transistor segments disposed in a second area of the semiconductor die adjacent the first area. Each of the transistor segments in the first and second sections includes a pillar of a semiconductor material that extends in a vertical direction. First and second dielectric regions are disposed on…
METHOD AND APPARATUS TO LIMIT OUTPUT POWER IN A SWITCHING POWER SUPPLY
Granted: July 10, 2008
Application Number:
20080164858
Techniques are disclosed to adjust a current limit in a switching regulator. One example switching regulator includes a comparator having first and second inputs and an output. The first input of the comparator is adapted to sense a current flow through a switch and the second input of the comparator is adapted to sense a variable current limit value. A controller is coupled to the output of the comparator and to the switch to control switching of the switch to regulate an output of a…
METHOD AND APPARATUS TO IMPROVE REGULATION OF A POWER SUPPLY
Granted: July 3, 2008
Application Number:
20080157739
Techniques are disclosed to regulate a power supply with a compensation signal generation circuit. One example regulated power supply includes a sense circuit coupled to sense an output voltage of the regulated power supply. The regulated power supply also includes a switching power converter circuit, which includes a switch coupled to be switched in response to a control signal received from the sense circuit to regulate the output voltage of the regulated power supply. The regulated…
Gate etch process for a high-voltage FET
Granted: July 3, 2008
Application Number:
20080160705
A method, in one embodiment, includes etching first and second dielectric regions in a substantially isotropic manner through first and second openings of a mask layer to create first and second trenches. The first and second dielectric regions are disposed on opposite sides of a mesa of semiconductor material, the mesa having first and second sidewalls that respectively adjoin the first and second dielectric regions. The first and second dielectric regions in the first and second…
METHOD AND APPARATUS FOR TRIMMING CURRENT LIMIT AND FREQUENCY TO MAINTAIN A CONSTANT MAXIMUM POWER
Granted: June 12, 2008
Application Number:
20080136392
A method which regulates a power supply. In one aspect of the invention, the method includes switching a power switch of a power supply regulator at an operating frequency (f) during operation of the power supply regulator. A current through the power switch is controlled to keep the current through the power switch below a peak current limit threshold (Ip) during operation of the power supply regulator. The maximum deliverable power value of a power supply to be regulated by the power…
APPARATUS AND METHOD FOR WINDING AN ENERGY TRANSFER ELEMENT CORE
Granted: June 12, 2008
Application Number:
20080136577
Apparatus for reducing electrical earth displacement current flow generated by wound components is disclosed. In one aspect, an apparatus includes a plurality of layers of an input winding wound around an energy transfer element core. An outer layer of the plurality of layers of the input winding is wound with a number of turns different than the number of turns in substantially each of the inner layers of the plurality of layers of the input winding. An output winding is wound around…
METHOD AND APPARATUS TO REDUCE MAXIMUM POWER FROM A POWER SUPPLY WITH TRANSITION REGION REGULATION
Granted: May 1, 2008
Application Number:
20080100275
Techniques are disclosed to regulate the output power of a power supply. An example technique for regulating a power supply output includes regulating in response to a feedback signal an output current of a power supply in a regulated current region of operation if an output voltage of the power supply is less than a second transition voltage. The output voltage and the output current of the power supply are regulated in a transition region current region of operation in response to the…
ELECTRONIC CIRCUIT CONTROL ELEMENT WITH TAP ELEMENT
Granted: May 1, 2008
Application Number:
20080101098
A technique for controlling a power supply with power supply control element with a tap element. An example power supply control element includes a power transistor that has first and second main terminals, a control terminal and a tap terminal. A control circuit is coupled to the control terminal. The tap terminal and the second main terminal of the power transistor are to control switching of the power transistor. The tap terminal is coupled to provide a signal to the control circuit…
High-voltage vertical transistor with a multi-gradient drain doping profile
Granted: May 1, 2008
Application Number:
20080102581
A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections, each section having a substantially constant doping concentration gradient, the gradient of one section being at least 10% greater than…
Gate etch process for a high-voltage FET
Granted: April 10, 2008
Application Number:
20080085603
A method, in one embodiment, includes etching first and second dielectric regions in a substantially isotropic manner through first and second openings of a mask layer to create first and second trenches. The first and second dielectric regions are disposed on opposite sides of a mesa of semiconductor material, the mesa having first and second sidewalls that respectively adjoin the first and second dielectric regions. The first and second dielectric regions in the first and second…
METHOD AND APPARATUS FOR SENSING A CURRENT IN A CIRCUIT
Granted: March 20, 2008
Application Number:
20080068193
Techniques are disclosed to sense a current in a circuit. For instance, current sense circuit according to the teachings of the present invention includes a current sense resistor coupled to an input of the current sense circuit. The current sense resistor is coupled to receive a current to be sensed from the input of the current sense circuit. The current to be sensed is converted to a current sense voltage. A first PN junction diode is coupled to the current sense resistor. A light…
METHOD AND APPARATUS TO IMPROVE FREQUENCY STABILITY OF AN INTEGRATED CIRCUIT OSCILLATOR
Granted: February 21, 2008
Application Number:
20080042763
A simple low cost integrated circuit oscillator includes a capacitor coupled to be charged and discharged by first and second current sources. A first voltage follower circuit including a first bipolar transistor having a base is coupled to the capacitor. The first bipolar transistor is biased such that a voltage at an emitter of the first bipolar transistor follows a voltage on the capacitor. A first current path of a current mirror is coupled to the base of the first bipolar…
METHOD AND APPARATUS TO CONTROL OUTPUT POWER FROM A SWITCHING POWER SUPPLY
Granted: January 10, 2008
Application Number:
20080007240
Techniques are disclosed to control output power from a switching power supply. A sample power converter controller circuit includes a control circuit coupled to be coupled to a switch. The control circuit includes a current sense circuit to be coupled to a primary winding of an energy transfer element coupled to the switch. The control circuit also includes a measurement circuit to be coupled to a secondary winding of the energy transfer element. A feedback circuit is also included and…
METHOD AND APPARATUS FOR SUBSTANTIALLY REDUCING ELECTRICAL EARTH DISPLACEMENT CURRENT FLOW GENERATED BY WOUND COMPONENTS
Granted: January 10, 2008
Application Number:
20080007381
A transformer having input and output windings. A sample transformer includes an input winding wound around a core. The input winding has a first end and a second end. An output winding is also wound around the core. The output winding has a first end and a second end. The input winding is capacitively coupled to the output winding to provide a transfer of energy from the input winding to the output winding. A balancing winding is also wound around the core. The balancing winding has a…
Integrated circuit with multi-length output transistor segments
Granted: September 6, 2007
Application Number:
20070205471
A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The first and second output transistors occupy an L-shaped area of the semiconductor die, the L-shaped area having first and second inner sides that are respectively disposed adjacent first and second sides of the control circuit. At…
High-voltage vertical transistor with a multi-gradient drain doping profile
Granted: June 14, 2007
Application Number:
20070132013
A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections, each section having a substantially constant doping concentration gradient, the gradient of one section being at least 10% greater than…
Integrated circuit with multi-length power transistor segments
Granted: February 1, 2007
Application Number:
20070023778
A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The first and second output transistors occupy an L-shaped area of the semiconductor die, the L-shaped area having first and second inner sides that are respectively disposed adjacent first and second sides of the control circuit. At…
Integrated circuit with multi-length power transistor segments
Granted: May 25, 2006
Application Number:
20060110861
A monolithic power integrated circuit fabricated on a semiconductor die includes a control circuit and a first output high voltage field-effect transistor (HVFET) having source and drain segments substantially equal to a first length. A second output HVFET has source and drain segments substantially equal to a second length. At least one of the first and second output HVFETs is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules…
Integrated circuit with multi-length power transistor segments
Granted: April 27, 2006
Application Number:
20060086974
A monolithic power integrated circuit fabricated on a semiconductor die includes a control circuit and a first output high voltage field-effect transistor (HVFET) having source and drain segments substantially equal to a first length. A second output HVFET has source and drain segments substantially equal to a second length. At least one of the first and second output HVFETs is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules…
