Fully aligned subtractive processes and electronic devices therefrom
Granted: April 23, 2024
Patent Number:
11967527
Methods of forming fully aligned vias connecting two metal lines extending in two directions are described. The fully aligned via is aligned with the first metal line and the second metal line along both directions. A third metal layer is patterned on a top of a second metal layer in electrical contact with a first metal layer. The patterned third metal layer is misaligned from the top of the second metal layer. The second metal layer is recessed to expose sides of the second metal layer…
Selective tungsten deposition at low temperatures
Granted: April 23, 2024
Patent Number:
11967525
Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with…
Self-assembled monolayer for selective deposition
Granted: April 23, 2024
Patent Number:
11967523
Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, alcohol, ester, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.
Substrate support for chucking of mask for deposition processes
Granted: April 23, 2024
Patent Number:
11967516
Embodiments of the disclosure include methods and apparatus for electrostatically coupling a mask to a substrate support in a deposition chamber. In one embodiment, a substrate support is disclosed that includes a substrate receiving surface, a recessed portion disposed about a periphery of the substrate receiving surface, an electrostatic chuck disposed below the substrate receiving surface, and a plurality of compressible buttons disposed within a respective opening formed in the…
Spectrographic monitoring using a neural network
Granted: April 23, 2024
Patent Number:
11966212
A method of processing a substrate includes subjecting a substrate to processing that modifies a thickness of an outer layer of the substrate, measuring a spectrum of light reflected from the substrate during processing, reducing the dimensionality of the measured spectrum to generate a plurality of component values, generating a characterizing value using an artificial neural network, and determining at least one of whether to halt processing of the substrate or an adjustment for a…
Method of forming nickel silicide materials
Granted: April 23, 2024
Patent Number:
11965236
Methods for forming a nickel silicide material on a substrate are disclosed. The methods include depositing a first nickel silicide seed layer atop a substrate at a temperature of about 15° C. to about 27° C., annealing the first nickel silicide seed layer at a temperature of 400° C. or less such as over 350° C.; and depositing a second nickel silicide layer atop the first nickel silicide seed layer at a temperature of about 15° C. to about 27° C. to form the nickel silicide…
Collimator for a physical vapor deposition (PVD) chamber
Granted: April 23, 2024
Patent Number:
D1024149
Boron concentration tunability in boron-silicon films
Granted: April 16, 2024
Patent Number:
11961739
Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing…
Apparatus for uniformly arranging solar cell elements, system for use in the manufacture of solar cells, and method for uniformly arranging solar cell elements
Granted: April 16, 2024
Patent Number:
11961937
An apparatus for uniformly arranging solar cell elements that includes: a transport device for moving at least one solar cell element at a first speed; a transfer device that includes at least one gripping unit configured to grip the at least one solar cell element; and an actuator configured to move the transfer device at a second speed that is higher than the first speed.
Multi-metal lateral layer devices with internal bias generation
Granted: April 16, 2024
Patent Number:
11961910
A ferroelectric capacitor or a ferroelectric transistor may include a first metal layer having a first metal having a first work function, and a second metal layer having a second metal having a second work function. The capacitor may also include a a vertical electrode and a ferroelectric material that surrounds the vertical electrode and forms a plurality of switching regions in the ferroelectric material. The transistor may include a vertical channel, a vertical buffer layer that…
CMP pad construction with composite material properties using additive manufacturing processes
Granted: April 16, 2024
Patent Number:
11958162
Embodiments of the disclosure generally provide polishing pads having a composite pad body and methods for forming the polishing pads. In one embodiment, the composite pad body includes one or more first features formed from a first material or a first composition of materials, and one or more second features formed from a second material or a second composition of materials, wherein the one or more first features and the one or more second features are formed by depositing a plurality…
Treatments to enhance material structures
Granted: April 16, 2024
Patent Number:
11961734
A method of forming a high-? dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-? dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-? dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-? dielectric cap layer, and removing the sacrificial silicon cap layer.
Process kit having tall deposition ring for PVD chamber
Granted: April 16, 2024
Patent Number:
11961723
Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the…
Defect examination on a semiconductor specimen
Granted: April 16, 2024
Patent Number:
11961221
There is provided a system and method of runtime defect examination of a semiconductor specimen, comprising obtaining a first image representative of at least part of the semiconductor specimen, the first image acquired by an examination tool configured with a first focus plane; estimating whether the first image is in focus using a machine learning (ML) model, wherein the ML model is previously trained for classifying images into focused images and defocused images; upon an estimation…
Capacitive sensor for monitoring gas concentration
Granted: April 16, 2024
Patent Number:
11959868
Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.
Shunt door for magnets in plasma process chamber
Granted: April 16, 2024
Patent Number:
11959174
Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets…
Asymmetric injection for better wafer uniformity
Granted: April 16, 2024
Patent Number:
11959169
A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The…
Selective cobalt deposition on copper surfaces
Granted: April 16, 2024
Patent Number:
11959167
Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment…
Method for screen printing of a material on a substrate, controller for an apparatus for screen printing on a substrate, and apparatus for screen printing of a material on a substrate
Granted: April 16, 2024
Patent Number:
11958284
A method for screen printing of a material on a substrate is provided. The method includes moving a process head assembly having at least one deposition device from a first position to a second position to perform a stroke, wherein the stroke includes at least a first phase for material processing of a material on a screen device using the at least one deposition device and a second phase for a material transfer from the screen device to the substrate. The at least one deposition device…
Stepped retaining ring
Granted: April 16, 2024
Patent Number:
11958164
A two part retaining ring is described. A rigid upper portion has an annular recess along its inner diameter. An annular wearable lower portion has an inner diameter, an annular extension defined by the inner diameter and a vertical wall that is perpendicular to a surface of the second portion and opposite to the inner diameter. The annular extension fits into the annular recess of the annular first portion. A bonding material is on the vertical wall of the annular second portion.
