Assembly comprising a first connector, a second connector and a coding system selectively allowing connection
Granted: March 7, 2023
Patent Number:
11600949
An assembly (10) includes a first connector (12), and a second connector (14) mobile in axial translation relative to the first connector, a first part (16) attached to the first connector, and a first sleeve (18) axially rotatable relative to the first part between a first plurality of positions, a first blocking device (20) blocking the first sleeve, a second part (22) attached to the second connector, and a second sleeve (24) axially rotatable relative to the second part between a…
Compressible liquid containment berm assembly
Granted: April 14, 2020
Patent Number:
10618250
A compressible liquid retaining berm having a plurality of wall members, the wall members composed of a compressible, resilient material such that the wall members will rebound to a neutral state after being compressed.
Solid state fragrancing
Granted: December 3, 2019
Patent Number:
10493177
Fragrance control is provided by articles of manufacture including various solid state fragrancing objects, methods of using such objects, and systems that employ one or more such objects. The fragrancing object can be easy to manufacture, long lasting, provide fragrance that is consistently released over time, provide an indication to the user that the object needs to be replaced, and can hold a desired ratio of fragrance. The solid state fragrancing object can be coupled to an air vent…
Wafer chuck apparatus with micro-channel regions
Granted: November 5, 2019
Patent Number:
10468290
The wafer chuck apparatus has a chuck body that includes an interior and a top surface. A plurality of micro-channel regions is formed in the top surface. Each micro-channel region is defined by an array of micro-channel sections that are in pneumatic communication with each other. The micro-channel regions are pneumatically isolated from each other. One or more vacuum manifold regions are defined in the interior of the chuck body and are in pneumatic communication with corresponding…
Compressible liquid containment berm assembly
Granted: October 8, 2019
Patent Number:
10435856
A compressible liquid retaining berm having a plurality of linear wall members and right angle corner members composed of a compressible, resilient material such that the wall members and corner members will rebound to a neutral state after being compressed. A longitudinal slot is disposed in the top wall of the wall members and the corner members, with the corner member longitudinal slots communicating with a recess positioned in the corner member. A liquid impermeable liner member is…
High-efficiency line-forming optical systems and methods using a serrated spatial filter
Granted: July 16, 2019
Patent Number:
10353208
High-efficiency line-forming optical systems and methods that employ a serrated aperture are disclosed. The line-forming optical system includes a laser source, a beam conditioning optical system, a first aperture device, and a relay optical system that includes a second aperture device having the serrated aperture. The serrated aperture is defined by opposing serrated blades configured to reduce intensity variations in a line image formed at an image plane as compared to using an…
Plasma enhanced ALD system
Granted: July 16, 2019
Patent Number:
10351950
An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to…
Methods of forming an ALD-inhibiting layer using a self-assembled monolayer
Granted: June 11, 2019
Patent Number:
10316406
Methods of forming an ALD-inhibiting layer using a layer of SAM molecules include providing a metalized substrate having a metal M and an oxide layer of the metal M. A reduction gas that includes a metal Q is used to reduce the oxide layer of the metal M, leaving a layer of form of M+MQyOx atop the metal M. The SAM molecules are provided as a vapor and form an ALD-inhibiting SAM layer on the M+MQyOx layer. Methods of performing S-ALD using the ALD-inhibiting SAM layer are also disclosed.
Scanning methods for focus control for lithographic processing of reconstituted wafers
Granted: April 23, 2019
Patent Number:
10269662
A method of processing a reconstituted wafer that supports IC chips includes operably disposing the reconstituted wafer in a lithography tool that has a depth of focus and a focus plane and that defines exposure fields on the reconstituted wafer, wherein each exposure field includes at least one of the IC chips. The method also includes scanning the reconstituted wafer with a line scanner to measure a surface topography of the reconstituted wafer as defined by the IC chips. The method…
Method and apparatus for forming device quality gallium nitride layers on silicon substrates
Granted: April 2, 2019
Patent Number:
10249491
Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by…
Herbal composition for vaginal treatment
Granted: February 12, 2019
Patent Number:
10201576
The present invention discloses a herbal formulation comprising therapeutic effective amount of plant extract of Woodfordia Floribunda; therapeutic effective amount of plant extract of Centella Asiatica; and an effective amount of at least one pharmaceutically acceptable excipient.
Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
Granted: October 2, 2018
Patent Number:
10090153
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable…
Laser annealing systems and methods with ultra-short dwell times
Granted: September 25, 2018
Patent Number:
10083843
Laser annealing systems and methods with ultra-short dwell times are disclosed. The method includes locally pre-heating the wafer with a pre-heat line image and then rapidly scanning an annealing image relative to the pre-heat line image to define a scanning overlap region that has a dwell time is in the range from 10 ns to 500 ns. These ultra-short dwell times are useful for performing surface or subsurface melt annealing of product wafers because they prevent the device structures from…
Silicon germanium heterojunction bipolar transistor structure and method
Granted: July 24, 2018
Patent Number:
10032883
Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can…
Systems and methods for reducing pulsed laser beam profile non-uniformities for laser annealing
Granted: July 10, 2018
Patent Number:
10016843
Systems and methods for reducing pulsed laser beam profile non-uniformities for laser annealing are disclosed. The methods include directing an initial pulsed laser beam along an optical axis, and imparting to each light pulse a time-varying angular deflection relative to the optical axis. This forms a new laser beam wherein each light pulse is smeared out over an amount of spatial deflection ? sufficient to reduce the micro-scale intensity variations in the laser beam. The new laser…
Method and apparatus for forming device quality gallium nitride layers on silicon substrates
Granted: May 1, 2018
Patent Number:
9960036
Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by…
Systems and methods of characterizing process-induced wafer shape for process control using CGS interferometry
Granted: April 3, 2018
Patent Number:
9935022
Systems and methods of characterizing wafer shape using coherent gradient sensing (CGS) interferometry are disclosed. The method includes measuring at least 3×106 data points on a wafer surface using a CGS system to obtain a topography map of the wafer surface. The data are collected on a wafer for pre-processing and post-processing of the wafer, and the difference calculated to obtain a measurement of the effect of the process on wafer surface shape. The process steps for processing…
Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
Granted: March 27, 2018
Patent Number:
9929011
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable…
Superhydrophobic, oleophobic and ice-phobic fabrics
Granted: January 9, 2018
Patent Number:
9862063
Fabrics that have been treated to create superhydrophobic, oleophobic and/or ice-phobic performance are manufactured or assembled in specific conforming shapes so they can be positioned on or pulled over and around certain objects for the purpose of making those objects superhydrophobic, oleophobic and/or ice-phobic so they are self-cleaning, water proof, ice-resistant, oil-resistant, corrosion barriers, etc.
Atomic layer deposition head
Granted: October 10, 2017
Patent Number:
9783888
An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into…
