DUAL MODE CURRENT SENSING IN HIGH POWER DRIVER AND SWITCH TRANSISTOR MODULE
Granted: February 27, 2025
Application Number:
20250070668
Apparatus and associated methods relate to circuit load balancing in a multi-phase power supply system (MPPSS). In an illustrative example, a MPPSS may include multiple power phases, each driven by a corresponding power phase driver (e.g., a DRMOS). A controller, for example, may include multiple current balancing inputs, each corresponding to one of the power phases. For example, the current balancing inputs may be generated by a dual mode current sensing circuit (DMCSC). For example,…
SEMICONDUCTOR PACKAGE HAVING HIGH METAL BUMPS AND ULTRA-THIN SUBSTRATE AND METHOD OF MAKING THE SAME
Granted: February 27, 2025
Application Number:
20250070069
A semiconductor package comprises a semiconductor substrate, a plurality of contact pads, a plurality of metal bumps, a metal layer, and a molding encapsulation. A thickness of the semiconductor substrate is less than 35 microns. A first method comprises the steps of providing a device wafer; attaching a first carrier; applying a thinning process; forming a metal layer; applying a first tape; removing the first carrier; applying a first singulation process; removing the first tape;…
SEMICONDUCTOR RIGID CHIP-SCALE PACKAGE AND METHOD OF MAKING THE SAME
Granted: February 27, 2025
Application Number:
20250070049
A semiconductor package comprises a semiconductor substrate, a plurality of contact pads, a seed layer, a first thick metal layer, a second thick metal layer, and a coating metal layer. Direct attachment of the first thick metal layer and the second thick metal layer comprises bonded metal atoms. The first thick metal layer and the second thick metal layer are bonded by an SAB process. A method comprises the steps of providing an upper device portion, providing a lower carrier portion,…
CHIP SCALE SEMICONDUCTOR PACKAGE HAVING BACK SIDE METAL LAYER AND RAISED FRONT SIDE PAD AND METHOD OF MAKING THE SAME
Granted: February 27, 2025
Application Number:
20250069973
A chip scale semiconductor package comprises a silicon layer, a back side metal layer, and a plurality of front side pads. Each of the plurality of front side pads comprises a respective copper member and a respective solder member. A method comprises the steps of: providing a wafer; grinding the back side of the wafer forming a peripheral ring; applying a metallization process to a grinded surface; removing the peripheral ring; forming a front side seed layer; forming a front side…
SWITCHING FREQUENCY CONTROLLER, VOLTAGE CONVERTER, AND METHOD FOR CONTROLLING SWITCHING FREQUENCY
Granted: January 2, 2025
Application Number:
20250007500
A switching frequency controller, a voltage converter, and a method are used for controlling switching frequency. The switching frequency controller includes a frequency divider, a frequency detector, an accumulation counter, and an on-time controller. The frequency divider generates a divisional signal having a divisional frequency according to an input signal having a target frequency. The target frequency is 2N times of the divisional frequency. The frequency detector receives the…
SEMICONDUCTOR PACKAGE HAVING MULTIPLE REDISTRIBUTION LAYERS AND METHOD OF MAKING THE SAME
Granted: December 26, 2024
Application Number:
20240429140
A semiconductor package comprises two or more chips, a first molding layer, a second molding layer, a third molding layer, a fourth molding layer, a bottom redistribution layer (RDL), a middle RDL, and a top RDL. The two or more chips comprise a first chip and a second chip. The top RDL comprises a first copper plate and a second copper plate. A plurality of vias electrically connect the second copper plate to the second chip. A method comprises the steps of preparing two or more chips;…
Post Measurement Calibrating Translation Circuit
Granted: May 30, 2024
Application Number:
20240178785
Apparatus and associated methods relate to a post temperature calibration translation circuit (PTCTC) configured to generate a signal corresponding to a predetermined temperature voltage translation relationship (TVTR). In an illustrative example, the PTCTC may be coupled to a motor controller including a control logic to regulate a power input to a motor based on the TVTR. The PTCTC further includes an input port configured to receive a temperature sensor output based on a predetermined…
SENSEFET FOR MOTOR CONTROL
Granted: May 2, 2024
Application Number:
20240146218
Apparatus and associated methods relate to a Source Terminal Replication Compensation Circuit for simulating an accurate fraction of a load current. In an illustrative example, a Source Terminal Replication Compensation Circuit (STRCC) may be connected to a motor driving circuit. The STRCC, for example, may include a simulation transistor configured to have a simulated structure of a main transistor in a motor driving circuit. The STRCC may include, for example, a disturbance rejection…
SEMICONDUCTOR PACKAGE HAVING REDUCED PARASITIC INDUCTANCE
Granted: March 21, 2024
Application Number:
20240096768
A semiconductor package includes a lead frame, a low side field-effect transistor (FET), a high side FET, a metal clip, and a molding encapsulation. The low side FET is flipped and is attached to a first die paddle of the lead frame. The lead frame comprises one or more voltage input (Vin) leads; a gate lead; one or more switching node (Lx) leads; a first die paddle; a second die paddle; and an end paddle. Each of an exposed bottom surface of the one or more Lx leads is directly…
SEMICONDUCTOR PACKAGE HAVING SMART POWER STAGE AND E-FUSE SOLUTION
Granted: December 28, 2023
Application Number:
20230420362
A semiconductor package comprises a lead frame, a low side metal-oxide-semiconductor field-effect transistor (MOSFET), an E-fuse MOSFET, a high side MOSFET, a metal connection, a gate driver, an E-fuse IC, and a molding encapsulation. A buck converter comprises a smart power stage (SPS) network and an E-fuse solution network. The SPS network comprises a high side switch, a low side switch, and a gate driver. A drain of the low side switch is coupled to a source of the high side switch…
SEMICONDUCTOR PACKAGE HAVING WETTABLE LEAD FLANKS AND TIE BARS AND METHOD OF MAKING THE SAME
Granted: December 28, 2023
Application Number:
20230420340
A semiconductor package includes a lead frame, a chip, and a molding encapsulation. The lead frame comprises a die paddle, a first plurality of leads, additional one or more leads, a second plurality of leads, a first tie bar, a second tie bar, a third tie bar, and a fourth tie bar. A respective end surface of each lead of the first plurality of leads, the additional one or more leads, and the second plurality of leads is plated with a metal. A respective end surface of the first tie…
POWER CONVERTER FOR HIGH POWER DENSITY APPLICATIONS
Granted: December 21, 2023
Application Number:
20230412070
A power semiconductor package comprises a lead frame, a semiconductor chip, and a molding encapsulation. The lead frame comprises an elevated section comprising a source section; a drain section; and a plurality of leads. The semiconductor chip includes a metal-oxide-semiconductor field-effect transistor (MOSFET) disposed over the lead frame. The semiconductor chip comprises a source electrode, a drain electrode, and a gate electrode. The source electrode of the semiconductor chip is…
SEMICONDUCTOR POWER MODULE PACKAGE HAVING LEAD FRAME ANCHORED BARS
Granted: October 19, 2023
Application Number:
20230335474
A power module includes a lead frame, a substrate mounted on the lead frame, a first anchor pad, a second anchor pad, a plurality of die pads, and a plurality of transistor dies. The lead frame includes a first lead frame anchored bar attached to the first anchor pad, and a second lead frame anchored bar attached to the second anchor pad. The power module may include a single control IC or two or more control ICs. For the case including a single control IC, the singe control IC controls…
CIRCUIT AND METHOD FOR CONTROLLING SWITCHING REGULATOR WITH ULTRASONIC MODE
Granted: September 28, 2023
Application Number:
20230308018
A control circuit for controlling a switching regulator includes a timer, a comparator, a driver circuit and a controller. The timer generates an input signal indicative of whether a predetermined amount of time has elapsed since an activation of a drive signal. The comparator is configured to compare a feedback voltage with a reference voltage to generate a comparison signal. The driver circuit is controlled by a control signal to generate the drive signal according to one of the input…
CHIP SCALE PACKAGE (CSP) SEMICONDUCTOR DEVICE HAVING THIN SUBSTRATE
Granted: September 28, 2023
Application Number:
20230307325
A semiconductor device comprises a semiconductor substrate, a plurality of metal layers, an adhesive layer, a compound layer, and a plurality of contact pads. A thickness of the semiconductor substrate is in a range from 15 ?m to 35 ?m. A thickness of the compound layer is larger than the thickness of the semiconductor substrate. A coefficient of thermal expansion of the compound layer is less than or equal to 9 ppm/° C. A glass transition temperature of the compound layer is larger…
INTELLIGENT POWER MODULE CONTAINING EXPOSED SURFACES OF TRANSISTOR DIE SUPPORTING ELEMENTS
Granted: September 7, 2023
Application Number:
20230282554
An intelligent power module (IPM) comprises a first transistor die supporting element, a second transistor die supporting element, a third transistor die supporting element, and a fourth transistor die supporting element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a tie bar, a low voltage IC, a high voltage IC, a plurality of leads, a first slanted section, a second slanted section, a third slanted section, a…
High Bandwidth Constant On-Time PWM Control
Granted: August 10, 2023
Application Number:
20230253870
Apparatus and associated methods relate to dynamic bandwidth control of a variable frequency modulation circuit by selective contribution of a crossover frequency tuning engine (XFTE) in response to a transient in a switching frequency. In an illustrative example, the XFTE may generate a transient control signal (Ctrans) in response to a transient in a control output signal (Cout) indicative of switching frequency and received from a feedback control circuit. The XFTE may generate…
SEMICONDUCTOR PACKAGE HAVING MOLD LOCKING FEATURE
Granted: July 6, 2023
Application Number:
20230215783
A semiconductor package comprises a lead frame, a chip, and a molding encapsulation. The lead frame comprises one or more die paddles comprising a first die paddle. The first die paddle comprises one or more through holes, one or more protrusions with grooves on top surfaces of the one or more protrusions, or one or more squeezed extensions. Each of the one or more through holes is filled with a respective portion of the molding encapsulation. Each of the one or more through holes may be…
POWER CONVERTER FOR HIGH POWER DENSITY APPLICATIONS
Granted: May 4, 2023
Application Number:
20230137176
A power semiconductor package comprises a lead frame, a semiconductor chip, and a molding encapsulation. The lead frame comprises an elevated section comprising a source section; a drain section; and a plurality of leads. The semiconductor chip includes a metal-oxide-semiconductor field-effect transistor (MOSFET) disposed over the lead frame. The semiconductor chip comprises a source electrode, a drain electrode, and a gate electrode. The source electrode of the semiconductor chip is…
POWER CONVERTER FOR HIGH POWER DENSITY APPLICATIONS
Granted: May 4, 2023
Application Number:
20230137176
A power semiconductor package comprises a lead frame, a semiconductor chip, and a molding encapsulation. The lead frame comprises an elevated section comprising a source section; a drain section; and a plurality of leads. The semiconductor chip includes a metal-oxide-semiconductor field-effect transistor (MOSFET) disposed over the lead frame. The semiconductor chip comprises a source electrode, a drain electrode, and a gate electrode. The source electrode of the semiconductor chip is…
