Switching regulator implementing negative current protection
Granted: January 28, 2025
Patent Number:
12212234
A controller for a switching regulator incorporates a protection circuit to limit the negative current to a negative current threshold while operating the switching regulator to sink current from the load without damage to the power switches. In some embodiments, in response to the negative current reaching the negative current threshold, the protection circuit turns off the low-side power switch and turns on the high-side power switch for a maximum time period. In the event the negative…
Low capacitance transient voltage suppressor with high holding voltage
Granted: January 28, 2025
Patent Number:
12211834
A transient voltage suppressor (TVS) device includes a silicon controlled rectifier (SCR) as the clamp device between a high-side steering diode and a low-side steering diode. The SCR includes alternating emitter and base regions arranged interleaving in a direction along a major surface of a semiconductor layer and orthogonal to a current path of the SCR. The TVS device realizes low capacitance and high holding voltage at the protected node.
SENSEFET for motor control
Granted: December 3, 2024
Patent Number:
12160196
Apparatus and associated methods relate to a Source Terminal Replication Compensation Circuit for simulating an accurate fraction of a load current. In an illustrative example, a Source Terminal Replication Compensation Circuit (STRCC) may be connected to a motor driving circuit. The STRCC, for example, may include a simulation transistor configured to have a simulated structure of a main transistor in a motor driving circuit. The STRCC may include, for example, a disturbance rejection…
Semiconductor package having mold locking feature
Granted: November 12, 2024
Patent Number:
12142548
A semiconductor package comprises a lead frame, a chip, and a molding encapsulation. The lead frame comprises one or more die paddles comprising a first die paddle. The first die paddle comprises one or more through holes, one or more protrusions with grooves on top surfaces of the one or more protrusions, or one or more squeezed extensions. Each of the one or more through holes is filled with a respective portion of the molding encapsulation. Each of the one or more through holes may be…
Post measurement calibrating translation circuit
Granted: October 22, 2024
Patent Number:
12126294
Apparatus and associated methods relate to a post temperature calibration translation circuit (PTCTC) configured to generate a signal corresponding to a predetermined temperature voltage translation relationship (TVTR). In an illustrative example, the PTCTC may be coupled to a motor controller including a control logic to regulate a power input to a motor based on the TVTR. The PTCTC further includes an input port configured to receive a temperature sensor output based on a predetermined…
Semiconductor package having smart power stage and E-fuse solution
Granted: October 8, 2024
Patent Number:
12113016
A semiconductor package comprises a lead frame, a low side metal-oxide-semiconductor field-effect transistor (MOSFET), an E-fuse MOSFET, a high side MOSFET, a metal connection, a gate driver, an E-fuse IC, and a molding encapsulation. A buck converter comprises a smart power stage (SPS) network and an E-fuse solution network. The SPS network comprises a high side switch, a low side switch, and a gate driver. A drain of the low side switch is coupled to a source of the high side switch…
Power semiconductor module
Granted: September 17, 2024
Patent Number:
D1042375
Low capacitance two channel and multi-channel TVS with effective inter-connection
Granted: September 10, 2024
Patent Number:
12087759
A transient voltage suppressing device includes a plurality of fingers arranged laterally along a major surface of an epitaxial layer. The plurality of fingers includes fingers of a first type and fingers of a second type. The first type and second type of fingers each include a silicon controlled rectifier (SCR) region and a junction diode region. The plurality of fingers of the second type are conductively coupled together by a second metal layer disposed over top a first metal layer…
Linear discrete Rtemperature Vcompensation
Granted: August 6, 2024
Patent Number:
12055565
A power MOSFET drain-source on resistance (Rdson) compensation device comprises circuitry configured to receive an input signal proportional to a voltage drop across a power MOSFET, a temperature dependent information and a gate-source voltage dependent information. The circuitry includes control logic and a first linear discrete voltage divider, wherein the first linear discrete voltage divider is configured to output a compensated voltage based on an at least one compensating control…
Power semiconductor module
Granted: July 30, 2024
Patent Number:
D1037187
Multi-phase switching regulator incorporating phase current balance circuit
Granted: July 2, 2024
Patent Number:
12027983
A multi-phase current mode hysteretic modulator implements phase current balancing among the multiple power stages using slope-compensated emulated phase current signals and individual phase control signal for each phase. In some embodiments, the slope-compensated emulated phase current signals of all the phases are averaged and compared to the slope-compensated emulated phase current signal of each phase to generate a phase current balance control signal for each phase. The phase…
Low capacitance transient voltage suppressor with a mos-triggered silicon controlled rectifier as high-side steering diode
Granted: June 25, 2024
Patent Number:
12021075
A transient voltage suppressor (TVS) device includes a MOS-triggered silicon controlled rectifier (SCR) as the high-side steering diode and a silicon controlled rectifier (SCR) for the low-side steering diode. In one embodiment, the MOS-triggered SCR includes alternating p-type and n-type regions and a diode-connected MOS transistor integrated therein to trigger the silicon controlled rectifier to turn on. In one embodiment, the SCR of the low-side steering diode includes alternating…
Power converter for high power density applications
Granted: June 18, 2024
Patent Number:
12015336
A power semiconductor package comprises a lead frame, a semiconductor chip, and a molding encapsulation. The lead frame comprises an elevated section comprising a source section; a drain section; and a plurality of leads. The semiconductor chip includes a metal-oxide-semiconductor field-effect transistor (MOSFET) disposed over the lead frame. The semiconductor chip comprises a source electrode, a drain electrode, and a gate electrode. The source electrode of the semiconductor chip is…
Low capacitance bidirectional transient voltage suppressor
Granted: May 21, 2024
Patent Number:
11990467
A bidirectional transient voltage suppressor (TVS) protection circuit includes two sets of steering diodes, a clamp circuit including an MOS transistor integrated with a silicon controlled rectifier (SCR) and a trigger circuit. In response to a voltage applied to one of the protected nodes exceeding a first voltage level, the trigger circuit drives the MOS transistor to cause a current flow at the SCR to trigger an SCR action and the SCR clamps the voltage at the respective protected…
Switching regulator implementing power recycling
Granted: January 16, 2024
Patent Number:
11876456
A controller for a switching regulator receiving an input voltage and generating a regulated output voltage includes a buck control circuit and a boost control circuit. The controller activates the buck control circuit to generate the regulated output voltage having a first voltage value less than the input voltage. The controller activates the boost control circuit to return charges stored on the output capacitor at the output node to the input node, thereby driving the regulated output…
Bottom source trench MOSFET with shield electrode
Granted: January 9, 2024
Patent Number:
11869967
An improved inverted field-effect-transistor semiconductor device and method of making thereof may comprise a source layer on a bottom and a drain disposed on a top of a semiconductor substrate and a vertical current conducting channel between the source layer and the drain controlled by a trench gate electrode disposed in a gate trench lined with an insulating material. A heavily doped drain region is disposed near the top of the substrate surrounding an upper portion of a shield trench…
High bandwidth constant on-time PWM control
Granted: January 2, 2024
Patent Number:
11863057
Apparatus and associated methods relate to dynamic bandwidth control of a variable frequency modulation circuit by selective contribution of a crossover frequency tuning engine (XFTE) in response to a transient in a switching frequency. In an illustrative example, the XFTE may generate a transient control signal (Ctrans) in response to a transient in a control output signal (Cout) indicative of switching frequency and received from a feedback control circuit. The XFTE may generate…
Circuit and method for controlling switching regulator with ultrasonic mode
Granted: December 19, 2023
Patent Number:
11848608
A control circuit for controlling a switching regulator includes a timer, a comparator, a driver circuit and a controller. The timer generates an input signal indicative of whether a predetermined amount of time has elapsed since an activation of a drive signal. The comparator is configured to compare a feedback voltage with a reference voltage to generate a comparison signal. The driver circuit is controlled by a control signal to generate the drive signal according to one of the input…
Port controller with real-time fault detection
Granted: November 7, 2023
Patent Number:
11809249
A port controller circuit is configured to control power transfer on a power path between a first terminal and a second terminal. The controller circuit includes first and second transistors connected in series between the first terminal and the second terminal, a control terminal of the first transistor receiving a first gate voltage and a control terminal of the second transistor receiving a second gate voltage. A first gate voltage control circuit generates the first gate voltage…
Semiconductor package having smart power stage and e-fuse solution
Granted: October 24, 2023
Patent Number:
11798882
A semiconductor package comprises a lead frame, a low side metal-oxide-semiconductor field-effect transistor (MOSFET), an E-fuse MOSFET, a high side MOSFET, a metal connection, a gate driver, an E-fuse IC, and a molding encapsulation. A buck converter comprises a smart power stage (SPS) network and an E-fuse solution network. The SPS network comprises a high side switch, a low side switch, and a gate driver. A drain of the low side switch is coupled to a source of the high side switch…
