Switching regulator controller configuration parameter optimization
Granted: September 15, 2020
Patent Number:
10778101
A controller for a multi-phase switching regulator includes an error amplifier configured to generate an error signal indicative of the difference between a feedback voltage and a reference voltage; a loop calculator configured to generate control signals in response to the error signal to drive the power stages; and a dynamic phase management control circuit configured to generate a power efficiency value in response to the input current, the input voltage, the output current, and the…
Asymmetrical blocking bidirectional gallium nitride switch
Granted: September 15, 2020
Patent Number:
10777673
A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device includes a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The HEMT GaN bidirectional blocking device further includes a first source/drain electrode and a second source/drain electrode disposed on two opposite sides of a gate…
Semiconductor chip integrating high and low voltage devices
Granted: September 8, 2020
Patent Number:
10770543
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations. For example, the semiconductor chip may include a NPN bipolar transistor, PNP bipolar transistor, a diode, an N channel DMOS transistor and the like. the first doped well being configured as a base of the DMOS transistor, a P channel DMOS transistor and the like. These and other embodiments are…
Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diode
Granted: September 1, 2020
Patent Number:
10763351
Fabricating a semiconductor device comprises: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer; forming a source embedded in the body; forming a contact trench that extends through the source and at least part of the body; disposing an implant at least along a contact trench wall; and disposing an epitaxial enhancement portion below the contact trench and in contact with…
HV converter with reduced EMI
Granted: September 1, 2020
Patent Number:
10763221
A high voltage (HV) converter implemented on a printed circuit board (PCB) includes a double diffused metal oxide semiconductor (DMOS) package comprising a lead frame and a main DMOS chip. The lead frame includes a gate section electrically connected to a gate electrode of the main DMOS chip, a source section electrically connected to a source electrode of the main DMOS chip and a drain section electrically connected to a drain electrode of the main DMOS chip. The PCB layout includes a…
Semiconductor device having one or more titanium interlayers and method of making the same
Granted: September 1, 2020
Patent Number:
10763125
A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer. The first titanium interlayer is disposed between the first aluminum layer and the second aluminum layer. A process for fabricating a semiconductor device comprising the steps of: preparing a semiconductor wafer; depositing a first aluminum layer onto the semiconductor wafer; depositing a first titanium interlayer…
Electrical power conversion system, control method and bridge rectifier
Granted: August 25, 2020
Patent Number:
10756645
A power conversion system includes a bridge switch circuit. The bridge switch circuit includes a plurality of switch sub-circuits, each switch sub-circuit includes: a switch for controlling switching of the switch sub-circuit; and a control unit configured to perform the following control cycle: When the voltage between the switch and the cathode is less than the first voltage threshold and the switch sub-circuit is not charged, the control unit controls the switch to be turned on, and…
Semiconductor device and method of forming including superjunction structure formed using angled implant process
Granted: August 25, 2020
Patent Number:
10755931
A semiconductor device includes a superjunction structure formed using simultaneous N and P angled implants into the sidewall of a trench. The simultaneous N and P angled implants use different implant energies and dopants of different diffusion rate so that after annealing, alternating N and P thin semiconductor regions are formed. The alternating N and P thin semiconductor regions form a superjunction structure where a balanced space charge region is formed to enhance the breakdown…
High surge transient voltage suppressor
Granted: July 21, 2020
Patent Number:
10720422
A bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating optimized collector-base junction realizing avalanche mode breakdown. In some embodiments, the bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating individually optimized collector-base and emitter-base junctions with the optimized junctions being spatially distributed. The optimized collector-base and emitter-base junctions both realize…
Source ballasting for p-channel trench MOSFET
Granted: July 14, 2020
Patent Number:
10714580
A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising a substrate of a first conductivity type, a body region of a second conductivity type, a gate electrode formed in a gate trench extending in the body region and substrate, a lightly doped source region and a heavily doped source region formed in the body region, and a trench contact extending to the body region formed in a contact trench. A contact implant of the second conductivity type is formed…
High surge bi-directional transient voltage suppressor
Granted: June 23, 2020
Patent Number:
10692851
A transient voltage suppressor (TVS) is constructed as an NPN bipolar transistor including individually optimized collector-base and emitter-base junctions both with avalanche mode breakdown. The TVS device is constructed using a base that includes a lightly doped base region bordered by a pair of more heavily doped base regions. The two more heavily doped base regions are used to form the collector-base junction and the emitter-base junction both as avalanche breakdown junctions. The…
Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
Granted: June 16, 2020
Patent Number:
10686062
This invention discloses an insulated gate bipolar transistor (IGBT) device formed in a semiconductor substrate. The IGBT device has a split-shielded trench gate that includes an upper gate segment and a lower shield segment. The IGBT device may further include a dummy trench filled with a dielectric layer disposed at a distance away from the split-shielded trench gate. The IGBT device further includes a body region extended between the split-shielded trench gate and the dummy trench…
Process method and structure for high voltage MOSFETs
Granted: June 16, 2020
Patent Number:
10686056
A semiconductor power device formed in a semiconductor substrate that includes a plurality of trenches formed at a top portion of the semiconductor substrate. The trenches extend laterally across the semiconductor substrate along a longitudinal direction and each trench has a nonlinear portion thus the nonlinear portion has a trench sidewall perpendicular to the longitudinal direction of the trench. A plurality of trench bottom dopant regions are formed below the trench bottom surface. A…
Reverse conducting IGBT incorporating epitaxial layer field stop zone
Granted: June 16, 2020
Patent Number:
10686038
An RC-IGBT includes a semiconductor body incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact…
Nano-tube MOSFET technology and devices
Granted: June 16, 2020
Patent Number:
10686035
This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each of the trenches is filled with a plurality of epitaxial layers of alternating conductivity types constituting nano tubes functioning as conducting channels stacked as layers extending along a sidewall direction with a “Gap Filler” layer filling a merging-gap between the nano tubes disposed substantially at a center of each of…
MOSFET device and fabrication
Granted: June 9, 2020
Patent Number:
10680097
A semiconductor device, comprising: a substrate; an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; a gate pickup trench in the substrate; a first conductive region and a second conductive region disposed in the gate pickup trench, the first conductive region and the second conductive region being separated by oxide, wherein at least a portion of the oxide surrounding the…
Trench MOSFET device and the preparation method thereof
Granted: May 26, 2020
Patent Number:
10665551
A trench-type metal-oxide-semiconductor field-effect transistor (MOSFET) device and a fabrication method are disclosed. A semiconductor substrate of a first conductivity type is provided. A plurality of first trenches arranged side by side in a first stripe layout extending along a first direction in a first preset area of the semiconductor substrate are formed. A plurality of second trenches arranged side by side in a second stripe layout extending along a second direction perpendicular…
Constant on-time (COT) control in isolated converter
Granted: May 12, 2020
Patent Number:
10651750
A constant on-time isolated converter comprises a transformer with a primary side and a secondary side. The primary side is connected to an electronic switch and secondary-side is connected to a load and a processor. The processor is connected to a driver on primary side through at least one coupling element and to the electronic switch. The processor receives an output voltage or an output current across the load generating a control signal accordingly. The driver receives the control…
SGT superjunction MOSFET structure
Granted: May 5, 2020
Patent Number:
10644102
A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a combination of shielded trench gate structure and a superjunction structure within an epitaxial layer including alternating n-doped and p-doped columns in an a drift region. In one example the gate trenches are formed in and over n-doped columns that have an extra charge region near and adjacent to the lower portion of the corresponding gate trench. The extra charge is balanced due to the shield…
Self-aligned contact for trench power MOSFET
Granted: May 5, 2020
Patent Number:
10644118
Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. Alternatively, the device has an oxide layer over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. It is emphasized that this abstract is provided to…
