Training a machine learning system to detect an excursion of a CMP component using time-based sequence of images
Granted: November 19, 2024
Patent Number:
12148149
Monitoring operations of a polishing system includes obtaining a time-based sequence of reference images of a component of the polishing system performing operations during a test operation of the polishing system, receiving from a camera a time-based sequence of monitoring images of an equivalent component of an equivalent polishing system performing operations during polishing of a substrate, determining a difference value for the time-based sequence of monitoring images by comparing…
High-K dielectric materials comprising zirconium oxide utilized in display devices
Granted: November 19, 2024
Patent Number:
12148766
Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein…
Low resistance and high reliability metallization module
Granted: November 19, 2024
Patent Number:
12148660
Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.
Integrated substrate measurement system
Granted: November 19, 2024
Patent Number:
12148647
An apparatus includes a substrate holder, a first actuator to rotate the substrate holder, a second actuator to move the substrate holder linearly, a first sensor to generate one or more first measurements or images of the substrate, a second sensor to generate one or more second measurements of target positions on the substrate, and a processing device. The processing device estimates a position of the substrate on the substrate holder and causes the first actuator to rotate the…
Calibration jig and calibration method
Granted: November 19, 2024
Patent Number:
12148645
Apparatus and methods for calibrating a height-adjustable edge ring are described herein. In one example, a calibration jig for positioning an edge ring relative to a reference surface is provided that includes a transparent plate, a plurality of sensors coupled to a first side of the transparent plate, and a plurality of contact pads coupled to an opposing second side of the transparent plate.
Shutter disk
Granted: November 19, 2024
Patent Number:
12148629
Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.
High power tungsten halogen lamp lifetime improvement through J-hook design
Granted: November 19, 2024
Patent Number:
12148607
A lamp and epitaxial processing apparatus are described herein. In one example, the lamp includes a bulb, a filament, and a plurality of filament supports disposed in spaced-apart relation to the filament, each of the filament supports having a hook support and a hook. The hook includes a connector configured to fasten the hook to the hook support, a first vertical portion extending from the connector toward the filament, and a rounded portion extending from an end of the first vertical…
Multi-zone gas distribution systems and methods
Granted: November 19, 2024
Patent Number:
12148597
The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows…
Plasma uniformity control in pulsed DC plasma chamber
Granted: November 19, 2024
Patent Number:
12148595
Embodiments provided herein generally include apparatus, e.g., plasma processing systems and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to improving process uniformity across the surface of the substrate, reducing defectivity on the surface of the substrate, or both. In some embodiments, the apparatus and methods provide for improved control over the uniformity of a plasma formed over…
Selection gate separation for 3D NAND
Granted: November 19, 2024
Patent Number:
12148475
Described is a memory string including at least one select gate for drain (SGD) transistor and at least one memory transistor in a vertical hole extending through a memory stack on a substrate. The memory stack comprises alternating word lines and dielectric material. There is at least one select-gate-for-drain (SGD) transistor in a first vertical hole extending through the memory stack, the select-gate-for-drain (SGD) transistor comprising a first gate material. At least one memory…
Thickness measurement of substrate using color metrology
Granted: November 19, 2024
Patent Number:
12148148
A metrology system for obtaining a measurement representative of a thickness of a layer on a substrate includes a camera positioned to capture a color image of at least a portion of the substrate. A controller is configured to receive the color image from the camera, store a predetermined path in a coordinate space of at least two dimension including a first color channel and a second color channel, store a function that provides a value representative of a thickness as a function of a…
Diagnostic methods for substrate manufacturing chambers using physics-based models
Granted: November 19, 2024
Patent Number:
12147212
A method includes receiving first sensor data, generated during a manufacturing process by sensors associated with a substrate manufacturing chamber. The method further includes receiving simulated sensor data generated by a trained physics-based model. The method further includes determining which one or more components of the manufacturing chamber contribute to a difference between the first sensor data and the simulated sensor data. The method further includes causing performance of a…
Plating and deplating currents for material co-planarity in semiconductor plating processes
Granted: November 19, 2024
Patent Number:
12146235
A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate…
Flow control features of CVD chambers
Granted: November 19, 2024
Patent Number:
12146219
Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough,…
Particle coating methods and apparatus
Granted: November 19, 2024
Patent Number:
12146217
A reactor for coating particles includes a vacuum chamber configured to hold particles to be coated, a vacuum port to exhaust gas from the vacuum chamber via the outlet of the vacuum chamber, a chemical delivery system configured to flow a process gas into the particles via a gas inlet on the vacuum chamber, one or more vibrational actuators located on a first mounting surface of the vacuum chamber, and a controller configured to cause the one or more vibrational actuators to generate a…
Confinement liner for a substrate processing chamber
Granted: November 19, 2024
Patent Number:
D1051867
Single-slot tubular cathode
Granted: November 19, 2024
Patent Number:
D1051838
Polishing system apparatus and methods for defect reduction at a substrate edge
Granted: November 12, 2024
Patent Number:
12138732
Embodiments herein include carrier loading stations and methods related thereto which may be used to beneficially remove nano-scale and/or micron-scale particles adhered to a bevel edge of a substrate before polishing of the substrate. By removing such contaminates, e.g., loosely adhered particles of dielectric material, from the bevel edge, contamination of the polishing interface can be avoided thus preventing and/or substantially reducing scratch related defectivity associated…
Sequential plasma and thermal treatment
Granted: November 12, 2024
Patent Number:
12142475
Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch…
Plasma processing chambers configured for tunable substrate and edge sheath control
Granted: November 12, 2024
Patent Number:
12142469
Embodiments herein provide plasma processing chambers and methods configured for fine-tuning and control over a plasma sheath formed during the plasma-assisted processing of a semiconductor substrate. Embodiments include a sheath tuning scheme, including plasma processing chambers and methods, which can be used to tailor one or more characteristics of a plasma sheath formed between a bulk plasma and a substrate surface. Generally, the sheath tuning scheme provides differently configured…
