Applied Materials Patent Grants

Gas cooled substrate support for stabilized high temperature deposition

Granted: October 17, 2017
Patent Number: 9790589
Embodiments of the present disclosure provides apparatus and method for stabilizing substrate temperature by flowing a flow of cooling gas to an inlet of cooling channels in a substrate support, receiving the flow of cooling gas from an outlet of the cooling channel using a heat exchanger, and releasing the cooling gas to an immediate environment, such as a cleanroom or a minienvironment.

Method to reduce line waviness

Granted: October 17, 2017
Patent Number: 9791786
Embodiments disclosed herein relate to an exposure pattern alteration software application which manipulates exposure polygons having lines with angles substantially close to angles of symmetry of a hex close pack arrangement, which suffer from long jogs. Long jogs present themselves as high edge placement error regions. As such, the exposure pattern alteration software application provides for line wave reduction by serrating polygon edges at affected angles to reduce edge placement…

Etch mask for hybrid laser scribing and plasma etch wafer singulation process

Granted: October 17, 2017
Patent Number: 9793132
Etch masks and methods of dicing semiconductor wafers are described. In an example, an etch mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. The etch mask also includes a plurality of particles dispersed throughout the water-soluble matrix. The plurality of particles has an average diameter approximately in the range of 5-100 nanometers. A ratio of weight % of the solid component to weight % of the plurality of particles is…

Support ring with encapsulated light barrier

Granted: October 17, 2017
Patent Number: 9793145
Embodiments described herein provide a thermal processing apparatus with a heat source and a rotating substrate support opposite the heat source, the rotating substrate support comprising a support member with a light blocking member. The light blocking member may be an encapsulated component, or may be movably disposed inside the support member. The light blocking member may be opaque and/or reflective, and may be a refractory metal.

Apparatus for variable substrate temperature control

Granted: October 10, 2017
Patent Number: 9783889
In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis,…

Method and system for inspecting an object with an array of beams

Granted: October 10, 2017
Patent Number: 9784689
According to an embodiment of the invention there may be provided a system for inspecting an object, the system may include a traveling lens acousto-optic device that is configured to generate a sequence of traveling lenses that propagate through an active region of the traveling lens acousto-optic device; an illumination unit that that is configured to illuminate the sequence of traveling lenses to provide a sequence of input beams; a first beam splitter that is configured to split the…

Pyrometry filter for thermal process chamber

Granted: October 10, 2017
Patent Number: 9786529
Embodiments of the invention generally relate to pyrometry during thermal processing of semiconductor substrates. More specifically, embodiments of the invention relate to a pyrometry filter for a thermal process chamber. In certain embodiments, the pyrometry filter selectively filters selected wavelengths of energy to improve a pyrometer measurement. The pyrometry filter may have various geometries which may affect the functionality of the pyrometry filter.

Wafer edge measurement and control

Granted: October 10, 2017
Patent Number: 9786537
Devices and methods are provided for positioning and/or rotating a substrate without solid contact, such as by floating the wafer on a thin layer of gas. Since there is no solid contact with components of a processing chamber, features on the wafer are used to determine wafer position and rotational speed. Closed loop control systems are provided with capacitive sensors to monitor the position of the edge of the wafer in a horizontal plane. Control systems may also monitor the position…

RF power delivery with approximated saw tooth wave pulsing

Granted: October 10, 2017
Patent Number: 9788405
Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a…

Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles

Granted: October 3, 2017
Patent Number: 9776361
A polishing article manufacturing system includes a feed section and a take-up section, the take-up section comprising a supply roll having a polishing article disposed thereon for a chemical mechanical polishing process, a print section comprising a plurality of printheads disposed between the feed section and the take-up section, and a curing section disposed between the feed section and the take-up section, the curing section comprising one or both of a thermal curing device and an…

Advanced process flow for high quality FCVD films

Granted: October 3, 2017
Patent Number: 9777378
Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved…

Process chamber gas flow improvements

Granted: October 3, 2017
Patent Number: 9779917
Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The…

Sputtering target with backside cooling grooves

Granted: October 3, 2017
Patent Number: 9779920
Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one…

Electromagnetic dipole for plasma density tuning in a substrate processing chamber

Granted: October 3, 2017
Patent Number: 9779953
Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an…

Methods and apparatus for rapidly cooling a substrate

Granted: October 3, 2017
Patent Number: 9779971
Embodiments of methods and apparatus for rapidly cooling a substrate are provided herein. In some embodiments, a cooling chamber for cooling a substrate includes a chamber body having an inner volume; a substrate support disposed in the chamber and having a support surface to support a substrate; a plate disposed in the chamber body opposite the substrate support, wherein the substrate support and the plate are movable with respect to each other between a first position and a second…

Electrostatic carrier for thin substrate handling

Granted: October 3, 2017
Patent Number: 9779975
Embodiments provided herein generally relate to an electrostatic chuck (ESC). The ESC may comprise a reduced number of stress initiation points, such as holes through the ESC, which may improve the mechanical integrity of the ESC. Electrodes disposed within the ESC may be connected to electrical contacts and a power source via conductive leads, which may be coupled or formed along a peripheral edge of the ESC. Thus, the need for holes formed in the ESC may be reduced or eliminated. In…

Gallium arsenide based materials used in thin film transistor applications

Granted: October 3, 2017
Patent Number: 9780223
Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based (GaAs) layer formed from the solution based precursor may be incorporated in thin film transistor devices to improve device performance and device speed. In one embodiment, a…

Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD

Granted: September 26, 2017
Patent Number: 9773663
Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

Particle reduction in a physical vapor deposition chamber

Granted: September 26, 2017
Patent Number: 9773665
Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a process kit shield includes: a body having a surface facing a processing volume of a physical vapor deposition (PVD) process chamber, wherein the body is composed of aluminum oxide (Al2O3), and a silicon nitride layer on the surface of the body.

3D material modification for advanced processing

Granted: September 26, 2017
Patent Number: 9773675
Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are…