Film thickness uniformity improvement using edge ring and bias electrode geometry
Granted: April 1, 2025
Patent Number:
12266560
Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.
Multiple process semiconductor processing system
Granted: April 1, 2025
Patent Number:
12266550
Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports. Each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may…
Selective barrier metal etching
Granted: April 1, 2025
Patent Number:
12266537
A method for selective barrier metal etching includes performing a hydrogen implantation process, in an inductively coupled plasma (ICP) etch chamber, to chemically reduce an oxidized portion of a barrier metal layer formed within a feature in a metal layer on the barrier metal layer, and performing an etch process, in the ICP etch chamber, to remove the hydrogen implanted portion of the barrier metal layer.
Scanning impedance measurement in a radio frequency plasma processing chamber
Granted: April 1, 2025
Patent Number:
12266506
Embodiments of the disclosure include a method of processing a substrate in a plasma processing system, comprising delivering an RF signal, by an RF generator, through an RF match to an electrode assembly disposed within the plasma processing system, wherein while delivering the RF signal the RF match is set to a first matching point, and delivering a voltage waveform, by a waveform generator, to the electrode assembly disposed within the plasma processing system while the RF signal is…
Matching process controllers for improved matching of process
Granted: April 1, 2025
Patent Number:
12265380
A method includes identifying first parameters of a first processing chamber of a semiconductor fabrication facility. The first parameters include first input parameters and first output parameters. The method further includes identifying second parameters of a second processing chamber of the semiconductor fabrication facility. The second parameters include second input parameters and second output parameters. The method further includes generating, by a processing device based on the…
Autonomous substrate processing system
Granted: April 1, 2025
Patent Number:
12265377
A cool cluster comprises one or more transfer chambers; a plurality of process chambers connected to the one or more transfer chambers; and a computing device of the tool cluster. The computing device is to receive first measurements generated by sensors of a first process chamber during or after a process is performed within the first process chamber; determine that the first process chamber is due for maintenance based on processing the first measurements using a first trained machine…
Selective etch of a substrate
Granted: March 25, 2025
Patent Number:
12261049
Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching…
Monolithic complementary field-effect transistors having carbon-doped release layers
Granted: March 25, 2025
Patent Number:
12262559
Embodiments of the disclosure advantageously provide semiconductor devices CFET in particular and methods of manufacturing such devices having a fully strained superlattice structure with channel layers that are substantially free of defects and release layers having a reduced selective removal rate. The CFET described herein comprise a vertically stacked superlattice structure on a substrate, the vertically stacked superlattice structure comprising: a first hGAA structure on the…
Transistor devices with multi-layer interlayer dielectric structures
Granted: March 25, 2025
Patent Number:
12261226
A transistor device includes a channel region, a first source/drain region adjacent to a first end of the channel region and a second source/drain region adjacent to a second end of the channel region, a gate structure disposed on the channel region, the first source/drain region and the second source/drain region, and an interlayer dielectric (ILD) structure disposed on the gate structure. The ILD structure includes a first dielectric layer including a first set of sublayers. The first…
Spot heating by moving a beam with horizontal rotary motion
Granted: March 25, 2025
Patent Number:
12261062
Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.
Doping techniques
Granted: March 25, 2025
Patent Number:
12261047
A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.
Method of linearized film oxidation growth
Granted: March 25, 2025
Patent Number:
12261039
Methods of forming an oxide layer over a semiconductor substrate are provided. The method includes forming a first oxide containing portion of the oxide layer over a semiconductor substrate at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature. A second oxide containing portion is formed over the substrate at a second growth rate by exposing the substrate to a second gas mixture having a second oxygen percentage at…
Tunability of dopant concentration in thin hafnium oxide films
Granted: March 25, 2025
Patent Number:
12261037
Methods of depositing thin films of hafnium oxide possessing strong ferroelectric properties are described. A hafnium oxide monolayer is formed in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas. A doped hafnium oxide monolayer is formed in a second process cycle comprising sequential exposure of the substrate to a hafnium precursor, purge gas, dopant precursor, purge gas, second oxidant and purge gas.…
Voltage pulse time-domain multiplexing
Granted: March 25, 2025
Patent Number:
12261019
Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source circuitry, a first switch coupled between the voltage source circuitry and a first output node of the waveform generator, the first output node being configured to be coupled to a chamber, and a second switch coupled between the first…
Machine learning based examination of a semiconductor specimen and training thereof
Granted: March 25, 2025
Patent Number:
12260543
There is provided a system and method of runtime examination of a semiconductor specimen. The method includes obtaining a runtime image representative of an inspection area of the specimen, the runtime image having a relatively low signal-to-noise ratio (SNR); and processing the runtime image using a machine learning (ML) model to obtain examination data specific for a given examination application, wherein the ML model is previously trained for the given examination application using…
Methods and mechanisms for preventing fluctuation in machine-learning model performance
Granted: March 25, 2025
Patent Number:
12259719
An electronic device manufacturing system configured to receive, by a processor, input data reflecting a feature related to a manufacturing process of a substrate. The manufacturing system is further configured to generate a characteristic sequence defining a relationship between at least two manufacturing parameters, and determine a relationship between one or more variables related to the feature and the characteristic sequence. The manufacturing system is further configured to…
Machine vision as input to a CMP process control algorithm
Granted: March 25, 2025
Patent Number:
12257665
During chemical mechanical polishing of a substrate, a signal value that depends on a thickness of a layer in a measurement spot on a substrate undergoing polishing is determined by a first in-situ monitoring system. An image of at least the measurement spot of the substrate is generated by a second in-situ imaging system. Machine vision processing, e.g., a convolutional neural network, is used to determine a characterizing value for the measurement spot based on the image. Then a…
Controlling chemical mechanical polishing pad stiffness by adjusting wetting in the backing layer
Granted: March 25, 2025
Patent Number:
12257664
A polishing pad for a chemical mechanical polishing apparatus includes a polishing layer having a polishing surface and a backing layer formed of a fluid-permeable material. The backing layer includes a lower surface configured to be secured to a platen and an upper surface secured to the polishing layer, wherein the lower surface and upper surface are sealed. A first seal circumferentially seals an edge of the backing layer, and a second seal seals and separates the backing layer into a…
Showerhead with embedded nut
Granted: March 25, 2025
Patent Number:
12257592
A showerhead with an embedded nut is disclosed. The showerhead comprises an embedded nut within a cavity. The nut may be engaged by a bolt through an opening in the cavity to support the showerhead. The apparatus allows for the support of the showerhead without the potential for metal contamination.
Robot apparatus, systems, and methods for transporting substrates in electronic device manufacturing
Granted: March 18, 2025
Patent Number:
12255089
Electronic device manufacturing systems, robot apparatus and associated methods are described. The robot apparatus includes an arm having an inboard end and an outboard end, the inboard end is configured to rotate about a shoulder axis; a first forearm is configured for independent rotation relative to the arm about an elbow axis at the outboard end of the arm; a first wrist member is configured for independent rotation relative the first forearm about a first wrist axis at a distal end…
