Control and prediction of multiple plasma coupling surfaces and corresponding power transfer
Granted: November 12, 2024
Patent Number:
12142461
Embodiments disclosed herein include a process power controller for a plasma processing tool. In an embodiment, the process power controller includes a process power source optimizer, a source predictor, and a process uniformity controller. In an embodiment, the source predictor is communicatively coupled to the process power source optimizer and the process uniformity controller.
Conductive oxide overhang structures for OLED devices
Granted: November 12, 2024
Patent Number:
12144206
Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The overhang structures are permanent to the sub-pixel circuit. The overhang structures include a conductive oxide. A first configuration of the overhang structures includes a base portion and a top portion with the top portion disposed on the base portion. In a first sub-configuration, the base portion includes the conductive oxide of…
Side storage pods, equipment front end modules, and methods for processing substrates
Granted: November 12, 2024
Patent Number:
12142500
A platform is of a side storage pod. The platform includes an upper surface and kinematic pins extending from the upper surface within a chamber of the side storage pod to engage a lower surface of a side storage container in the chamber to level the side storage container in the chamber.
Methods of modifying portions of layer stacks
Granted: November 12, 2024
Patent Number:
12142487
Embodiments provided herein generally relate to methods of modifying portions of layer stacks. The methods include forming deep trenches and narrow trenches, such that a desirably low voltage drop between layers is achieved. A method of forming a deep trench includes etching portions of a flowable dielectric, such that a deep metal contact is disposed below the deep trench. The deep trench is selectively etched to form a modified deep trench. A method of forming a super via includes…
Seam removal in high aspect ratio gap-fill
Granted: November 12, 2024
Patent Number:
12142480
Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the…
Method and chamber for backside physical vapor deposition
Granted: November 12, 2024
Patent Number:
12142478
Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to…
Chalcogen precursors for deposition of silicon nitride
Granted: November 12, 2024
Patent Number:
12142477
Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).
Sequential plasma and thermal treatment
Granted: November 12, 2024
Patent Number:
12142475
Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch…
Plasma processing chambers configured for tunable substrate and edge sheath control
Granted: November 12, 2024
Patent Number:
12142469
Embodiments herein provide plasma processing chambers and methods configured for fine-tuning and control over a plasma sheath formed during the plasma-assisted processing of a semiconductor substrate. Embodiments include a sheath tuning scheme, including plasma processing chambers and methods, which can be used to tailor one or more characteristics of a plasma sheath formed between a bulk plasma and a substrate surface. Generally, the sheath tuning scheme provides differently configured…
Self-assembled monolayer deposition from low vapor pressure organic molecules
Granted: November 12, 2024
Patent Number:
12142467
The present disclosure generally relates to a substrate processing chamber, a substrate processing apparatus, and a substrate processing method for self-assembled monolayer (SAM) deposition of low vapor pressure organic molecules (OM) followed by further substrate processing, such as atomic layer deposition.
Polishing system apparatus and methods for defect reduction at a substrate edge
Granted: November 12, 2024
Patent Number:
12138732
Embodiments herein include carrier loading stations and methods related thereto which may be used to beneficially remove nano-scale and/or micron-scale particles adhered to a bevel edge of a substrate before polishing of the substrate. By removing such contaminates, e.g., loosely adhered particles of dielectric material, from the bevel edge, contamination of the polishing interface can be avoided thus preventing and/or substantially reducing scratch related defectivity associated…
Single chamber flowable film formation and treatments
Granted: November 12, 2024
Patent Number:
12142459
Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may be housed in a processing region of a semiconductor processing chamber. The processing region may be defined between a faceplate and a substrate support on which the semiconductor substrate is seated. The methods may include…
Symmetric plasma source to generate pie-shaped treatment
Granted: November 12, 2024
Patent Number:
12142458
Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.
Crested barrier device and synaptic element
Granted: November 12, 2024
Patent Number:
12141688
A crested barrier memory device may include a first electrode, a first self-rectifying layer, and a combined barrier and active layer. The first self-rectifying layer may be between the first electrode and the active layer. A conduction band offset between the first self-rectifying layer and the combined barrier and active layer may be greater than approximately 1.5 eV. A valence band offset between the first self-rectifying layer and the combined barrier and active layer may be less…
Gray tone uniformity control over substrate topography
Granted: November 12, 2024
Patent Number:
12140871
Embodiments of the present disclosure generally relate to lithography systems. More particularly, embodiments of the present disclosure relate to a method, a system, and a software application for a lithography process to control transmittance rate of write beams and write gray tone patterns in a single exposure operation. In one embodiment, a plurality of shots are provided by an image projection system in a lithography system to a photoresist layer. The plurality of shots exposes the…
Large area seamless master and imprint stamp manufacturing method
Granted: November 12, 2024
Patent Number:
12140864
Embodiments of the present disclosure generally relate to pattern replication, imprint lithography, and more particularly to methods and apparatuses for creating a large area imprint without a seam. Methods disclosed herein generally include filling seams between pairs of masters with a filler material such that the seams are flush with a surface of the masters having a plurality of features disposed thereon.
Filter isolation for equipment front end module
Granted: November 12, 2024
Patent Number:
12140339
Disclosed herein are systems and methods for reducing startup time of an equipment front end module (EFEM). The EFEM may include an EFEM chamber formed between a plurality of walls, an upper plenum above the EFEM chamber, the upper plenum in fluid communication with the EFEM chamber, a plurality of ducts that provide a return gas flow path enabling recirculation of gas from the EFEM chamber to the upper plenum, one or more filters that separate the upper plenum from the EFEM chamber, an…
Flat head units for heavy load alignment
Granted: November 12, 2024
Patent Number:
12140168
A mask frame support unit includes a case, a protruding body extending below the case, and a station having a flat head disposed above the case. The protruding body includes a tapered region and a cylindrical region. The tapered region includes a first end having a first diameter coupled to the case and comprising a second end having a second diameter opposite the first end. The second diameter is less than the first diameter, and the tapered region is coupled to the cylindrical region…
Processing system and method of delivering a reactant gas
Granted: November 12, 2024
Patent Number:
12139790
Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas…
Polishing fluid collection apparatus and methods related thereto
Granted: November 12, 2024
Patent Number:
12138741
Embodiments of the present disclosure generally provide apparatus for collecting and reuse polishing fluids and methods related thereto. In particular, the apparatus and methods provided herein feature a polishing fluid collection system used to collect and reuse polishing fluids dispensed during the chemical mechanical polishing (CMP) of a substrate in an electronic device manufacturing process. In one embodiment, a polishing fluid catch basin assembly includes a catch basin sized to…
