Superjunction structures for power devices
Granted: March 14, 2017
Patent Number:
9595596
In one general aspect, a power device can include an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type. The power device can include a termination region surrounding at least a portion of the active region and can have a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type. Each of the plurality of pillars of…
Audio jack detection circuit
Granted: March 7, 2017
Patent Number:
9591421
This document discusses, among other things, a detection system configured to identify a type of a pole of a four-pole audio jack using first and second comparators. The detection system can include a bias circuit configured to bias a detection input coupled to the pole, and first and second comparators configured to compare the detection input to respective first and second thresholds to provide an indication of the type of the pole.
Fast load transient response power supply system using dynamic reference generation
Granted: March 7, 2017
Patent Number:
9590501
The present disclosure is directed to a fast load transient response power supply system using dynamic reference voltage generation. A system may comprise, for example, at least power supply circuitry, voltage reference circuitry and dynamic reference generation circuitry. The power supply circuitry may be configured to generate an output voltage (e.g., for driving a load) based on a power supply input voltage. The voltage reference circuitry may be configured to generate a reference…
SiC bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer
Granted: March 7, 2017
Patent Number:
9590047
A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT (100) are provided. The SiC BJT comprises an emitter region (150), a base region (140) and a collector region (120). The collector region is arranged on a substrate (110) having an off-axis orientation of about 8 degrees or lower. A defect termination layer (DTL, 130) for terminating dislocations originating from the substrate is arranged between the substrate and the collector region. The…
Multi-die MEMS package
Granted: March 7, 2017
Patent Number:
9586813
This document refers to multi-die micromechanical system (MEMS) packages. In an example, a multi-die MEMS package can include a controller integrated circuit (IC) configured to couple to a circuit board, a MEMS IC mounted to a first side of the controller IC, a through silicon via extending through the controller IC between the first side and a second side of the controller IC, the second side opposite the first side, and wherein the MEMS IC is coupled to the through silicon via.
Apparatus and method for recovering from partial insertion of an audio jack
Granted: February 28, 2017
Patent Number:
9584893
Apparatus and methods for recovering from an audio jack connection anomaly such as a partial insertion of an audio jack plug with an audio jack receptacle are provided. In an example, a method can include detecting a valid audio jack connection of an audio jack receptacle and an audio jack plug, detecting a change in a state of a detect switch associated with the audio jack connection, applying an oscillating signal to a microphone terminal associated with the audio jack connection,…
Dual-edge tracking synchronous rectifier control techniques for a resonant converter
Granted: February 28, 2017
Patent Number:
9584035
This disclosure provides control techniques for a resonant converter. In one control technique, for switching speeds that are below the resonant frequency of the primary stage of the converter, the switches of the synchronous rectifier (SR) portion (SR switches) of the resonant converter are controlled based on a rising edge of the corresponding primary side switch and the turn off time of a corresponding SR switch. In general, for below resonance operation, each corresponding SR switch…
Adaptive critical-duty-cycle clamp for power converters
Granted: February 28, 2017
Patent Number:
9584020
Devices and methods provide a duty cycle clamping device for preventing an output voltage of a power converter from decreasing as the duty cycle of a pulse width modulation (PWM) signal driving the power converter increases, the clamping device including duty cycle clamping circuitry configured to determine a critical duty cycle for the PWM signal based on an input voltage, a top voltage of a flying capacitor and a bottom voltage of the flying capacitor, and configured to clamp an actual…
Semiconductor die package including low stress configuration
Granted: February 28, 2017
Patent Number:
9583454
A semiconductor die package. The semiconductor die package comprises a semiconductor die and a molded clip structure comprising a clip structure and a first molding material covering at least a portion of the clip structure. The first molding material exposes an outer surface of the clip structure. The clip structure is electrically coupled to the semiconductor die. The semiconductor die package further comprises a leadframe structure comprising a die attach pad and a plurality of leads…
Enhanced peak current mode DC-DC power converter
Granted: February 21, 2017
Patent Number:
9577519
Apparatus and methods are provided for feedback circuitry in a power converter, the feedback circuitry including a first resistor coupled to a first node between a high switch and a low switch, a first capacitor in series with the first resistor, the first capacitor coupled to a second node, a first comparator having a positive terminal connected between the first resistor and the first capacitor and a negative terminal connected to a third node, the first comparator configured to…
Silicon carbide power bipolar devices with deep acceptor doping
Granted: February 21, 2017
Patent Number:
9577045
In a general aspect, a power semiconductor device can include a collector region disposed on a substrate, the collector region can include n-type silicon carbide (SiC). The power semiconductor device can also include a base region disposed on the collector region. The base region can include p-type SiC doped with gallium. The power semiconductor device can include an emitter region disposed on the base region. The emitter region can include n-type SiC carbide.
Combo ID detection
Granted: February 14, 2017
Patent Number:
9569388
This document discusses, among other things, an identification (ID) detection module configured to identify a first ID code in a first detect period within a first attach period and to identify a second ID code in a second detect period within the first attach period.
Ignition control circuit with dual (two-stage) clamp
Granted: January 31, 2017
Patent Number:
9559498
In a general aspect, an apparatus can include an insulated gate bipolar transistor (IGBT) device configured to control charging and discharging of an ignition coil and a two-stage voltage clamp coupled with the IGBT device. The two-stage voltage clamp can include a high-voltage portion coupled with the IGBT device and a low-voltage portion coupled with high-voltage portion and the IGBT device. The apparatus can further include a sense device coupled with the two-stage voltage clamp and a…
Apparatus and method for operating and switching a single conductor interface
Granted: January 24, 2017
Patent Number:
9552317
This application discusses, among other things, communication apparatus and methods, and more particularly, a single conductor or single wire communication scheme. In an example, a method for communicating between a master device and a slave device using a first single conductor can include transmitting a first ping on the first single conductor using a master device, the first single conductor configured to couple the master device to a slave device, receiving a slave ping on the first…
Circuit and method for overcurrent detection of power switch
Granted: January 24, 2017
Patent Number:
9551742
An overcurrent detection circuit for a power switch comprises a sampling circuit and a comparing circuit. The sampling circuit is configured to perform current sampling on the power switch using a sampling Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and an amplifier, convert a sample current into a sample voltage and transmit the sample voltage to the comparing circuit, and clamp operating voltages of the comparing circuit and of an output circuit of the amplifier by a…
System for battery management and protection
Granted: January 17, 2017
Patent Number:
9548604
The present disclosure is directed to a system for battery management and protection. A battery protection circuit may include a power semiconductor switch and a control integrated circuit (IC). The battery protection circuit may be configured to regulate the charging and/or discharging of a battery and further prevent the battery from operating outside of a safe operating area based on a protection trip point (e.g. overcurrent detection point) of the protection IC. The protection IC may…
DC voltage error protection circuit
Granted: January 3, 2017
Patent Number:
9538287
This document discusses among other things apparatus and methods for protecting circuit elements from harmful voltages. In an example, an apparatus can include an amplifier configured to receive an input signal and to provide an estimate of a first output signal, a peak detector to receive the estimate and to generate a comparison signal that is active when the amplified input signal exceeds a threshold value, and a timer configured to activate a second output signal if the comparison…
Reduction of degradation due to hot carrier injection
Granted: January 3, 2017
Patent Number:
9537001
In a general aspect, a high-voltage metal-oxide-semiconductor (HVMOS) device can include comprising a first gate dielectric layer disposed on a channel region of the HVMOS device and a second gate dielectric layer disposed on at least a portion of a drift region of the HVMOS device. The drift region can be disposed laterally adjacent to the channel region. The second gate dielectric layer can have a thickness that is greater than a thickness of the first gate dielectric layer.
Packaged semiconductor devices and methods of manufacturing
Granted: January 3, 2017
Patent Number:
9536800
In one general aspect, a package can include a semiconductor die having a first terminal on a first side of the semiconductor die and a second terminal on a second side of the semiconductor die, a leadframe portion electrically coupled to the second terminal of the semiconductor die, and a molding compound. The first terminal on the first side of the semiconductor die, a first surface of the leadframe portion, and a first surface of the molding compound can define at least a portion of a…
Ground fault circuit interrupter (GFCI) monitor
Granted: December 20, 2016
Patent Number:
9525282
This document discusses, among other things, a self-test (ST) ground fault circuit interrupter (GFCI) monitor configured to generate a simulated ground fault starting in a first half-cycle of a first cycle of AC power and extending into a second half-cycle of the first cycle of AC power, wherein the first half-cycle of the first cycle of AC power precedes the second half-cycle of the first cycle of AC power. Further, the ST GFCI monitor can detect a response to the simulated ground…
