Audio jack system
Granted: December 13, 2016
Patent Number:
9519602
This application discusses a system that can include a master device and a slave device coupled to the master device via an audio jack connector. In an example, the master device and the slave device can be configured to exchange information via a single conductive path of the audio jack connector using a digital communication protocol. The single conductive path can be configured to conduct audio signals of an audio transducer and the slave device can include a depletion-mode transistor…
Silicon carbide bipolar junction transistor including shielding regions
Granted: December 6, 2016
Patent Number:
9515176
A silicon carbide (SiC) bipolar junction transistor (BJT) and a method of manufacturing such a SiC BJT is provided. The SiC BJT can include a collector region having a first conductivity type, a base region having a second conductivity type opposite the first conductivity type, and an emitter region having the first conductivity type, the collector region, the base region and the emitter region being arranged as a stack. The emitter region defining an elevated structure defined at least…
MOSFET bridge circuit
Granted: November 29, 2016
Patent Number:
9509227
In a general aspect, a bridge circuit can include a first bridge including a first plurality of MOSFETs and including a first input terminal and a second input terminal, and a second bridge including a second plurality of MOSFETs and including a third input terminal and a fourth input terminal. The first bridge and the second bridge can be coupled in parallel and being coupled to a first load terminal and a second load terminal.
MIC/GND detection and automatic switch
Granted: November 15, 2016
Patent Number:
9497559
This document discusses, among other things, an audio jack detection switch configured to be coupled to first and second GND/MIC terminals of an audio jack, wherein the audio jack detection switch includes a detection circuit configured to measure an impedance on the first and second GND/MIC terminals and identify each GND/MIC terminal as either a GND pole or a MIC pole using the measured impedance, and wherein the audio jack detection switch includes a switch configured to automatically…
Termination region of a semiconductor device
Granted: November 15, 2016
Patent Number:
9496391
In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.
Self test of MEMS accelerometer with ASICS integrated capacitors
Granted: November 8, 2016
Patent Number:
9488693
An apparatus comprises a micro-electromechanical system (MEMS) sensor including a first capacitive element and a second capacitive element and an integrated circuit (IC). The IC includes a switch network circuit and a capacitance measurement circuit. The switch network circuit is configured to electrically decouple the first capacitive element of the MEMS sensor from a first input of the IC and electrically couple the second capacitive element to a second input of the IC. The capacitance…
Conductivity modulation in a silicon carbide bipolar junction transistor
Granted: October 25, 2016
Patent Number:
9478629
In one general aspect, a silicon carbide bipolar junction transistor (BJT) can include a collector region, a base region on the collector region, and an emitter region on the base region. The silicon carbide BJT can include a base contact electrically contacting the base region where the base region having an active part interfacing the emitter region. The silicon carbide BJT can also include an intermediate region of semiconductor material having at least a part extending from the…
Package including a semiconductor die and a capacitive component
Granted: October 25, 2016
Patent Number:
9478519
In one general aspect, a method can include forming a redistribution layer on a substrate using a first electroplating process, and forming a conductive pillar on the redistribution layer using a second electroplating process. The method can include coupling a semiconductor die to the redistribution layer, and can include forming a molding layer encapsulating at least a portion of the redistribution layer and at least a portion of the conductive pillar.
Silicon-carbide trench gate MOSFETs
Granted: October 11, 2016
Patent Number:
9466709
In a general aspect, an apparatus can include a semiconductor substrate, a drift region disposed in the semiconductor substrate; a body region disposed in the drift region and a source region disposed in the body region. The apparatus can also include a gate trench disposed in the semiconductor substrate. The apparatus can further include a gate dielectric disposed on a sidewall and a bottom surface of the gate trench, the gate dielectric on the sidewall defining a first interface with…
SiC power device having a high voltage termination
Granted: October 4, 2016
Patent Number:
9461108
In one general aspect, an apparatus can include a semiconductor region including a silicon carbide material and a junction termination extension implant region disposed in the semiconductor region. The apparatus can include a low interface state density portion of a dielectric layer having at least a portion in contact with the junction termination extension implant region.
Button-press detection and filtering
Granted: September 27, 2016
Patent Number:
9456272
The disclosure provides a button-press detection and filtering method, related circuit, and button-press detection chip for a external device. A button-press signal from a wire control apparatus is coupled to the button-press detection chip for the external device. The button-press detection chip for the external device can digitally sample the button-press signal through the filter circuit and outputs a digital logic signal corresponding to a button to an audio codec according to the…
Micromachined 3-axis accelerometer with a single proof-mass
Granted: September 27, 2016
Patent Number:
9455354
This document discusses, among other things, an inertial measurement system including a device layer including a single proof-mass 3-axis accelerometer, a cap wafer bonded to a first surface of the device layer, and a via wafer bonded to a second surface of the device layer, wherein the cap wafer and the via wafer are configured to encapsulate the single proof-mass 3-axis accelerometer. The single proof-mass 3-axis accelerometer can be suspended about a single, central anchor, and can…
MEMS device front-end charge amplifier
Granted: September 13, 2016
Patent Number:
9444404
This document discusses, among other things, apparatus and methods for a front-end charge amplifier. In certain examples, a front-end charge amplifier for a microelectromechanical system (MEMS) device can include a charge amplifier configured to couple to the MEMS device and to provide sense information of a proof mass of the MEMS device, a feedback circuit configured to receive the sense information and to provide feedback to an input of the charge amplifier, and wherein the charge…
MIC audio noise filtering
Granted: August 30, 2016
Patent Number:
9432786
This document discusses, among other things, a MIC audio noise filtering system configured to detect MIC audio noise at a pole of a four-pole audio jack using first and second comparators. The MIC audio noise detection system can include first and second comparators configured to compare a value of the pole to respective first and second thresholds and to provide an output indicative of the comparisons and a detection circuit configured to count changes in the output over a first period…
Common-mode feedback differential amplifier
Granted: August 30, 2016
Patent Number:
9431978
The present invention discloses a common-mode feedback differential amplifier circuit, a common-mode feedback differential amplification method, and an integrated circuit. In an example, a common-mode feedback (CMFB) loop conducts voltage division on a first common-mode signal to generate a second common-mode signal and a third common-mode signal, a differential amplifier sets a voltage of the signal with the higher voltage between the second common-mode signal and the third common-mode…
Sensorless current sense for regulating inductor current in a buck converter
Granted: August 30, 2016
Patent Number:
9431902
A device and method for sensing an inductor current in an inductor is provided that generates a voltage signal proportionate to the inductor current if the inductor is connected to a positive supply and simulates the inductor current if the inductor is not connected to the positive supply. The voltage signal may be generated by sampling an input voltage from the inductor onto a capacitor if the inductor is connected to the positive supply. The inductor current may be simulated by…
Superjunction structures for power devices and methods of manufacture
Granted: August 30, 2016
Patent Number:
9431481
In a general aspect, a power device can include an epitaxial layer of a first conductivity type, an active region, a termination region surrounding the active region, a plurality of trenches disposed in the epitaxial layer, and silicon material of a second conductivity type disposed in the plurality of trenches. The silicon material of the second conductivity type and a plurality of mesas defined in the epitaxial layer by the trenches, can define a plurality of concentric octagon-shaped…
Complimentary bit slicing side channel attack defense
Granted: August 23, 2016
Patent Number:
9423820
This document discusses, among other things, systems and methods to communicate data over a data bus during a first period of a clock signal with a uniform power distribution, including providing a complimentary bit state of the data during a first portion of the first period of the clock signal and providing an actual bit state of the data during a second portion of the first period of the clock signal. In an example, the first period can include first, second, third, and fourth…
Through silicon via including multi-material fill
Granted: August 23, 2016
Patent Number:
9425328
An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a…
Configuration of portions of a power device within a silicon carbide crystal
Granted: August 23, 2016
Patent Number:
9425262
In one general aspect, an apparatus can include a silicon carbide (SiC) crystal having a top surface aligned along a plane and the SiC crystal having an off-orientation direction. The apparatus including a semiconductor device defined within the SiC crystal. The semiconductor device having an outer perimeter where the outer perimeter has a first side aligned along the off-orientation direction and a second side aligned along a direction non-parallel to the off-orientation direction. The…
