KLA-Tencor Patent Applications

INSPECTION OF RETICLES USING MACHINE LEARNING

Granted: March 17, 2022
Application Number: 20220084179
Disclosed are methods and apparatus for inspecting a photolithographic reticle. A plurality of reference far field images are simulated by inputting a plurality of reference near field images into a physics-based model, and the plurality of reference near field images are generated by a trained deep learning model from a test portion of the design database that was used to fabricate a test area of a test reticle. The test area of a test reticle, which was fabricated from the design…

SIMULTANEOUS MULTI-DIRECTIONAL LASER WAFER INSPECTION

Granted: October 22, 2020
Application Number: 20200333262
Disclosed is apparatus for inspecting a sample. The apparatus includes illumination optics for simultaneously directing a plurality of incident beams at a plurality of azimuth angles towards a sample and collection optics for directing a plurality of field portions of output light from two or more of the plurality of angles towards two or more corresponding sensors. The two or more sensors are arranged for receiving the field portions corresponding to two or more angles and generating…

CORRELATING SEM AND OPTICAL IMAGES FOR WAFER NOISE NUISANCE IDENTIFICATION

Granted: September 17, 2020
Application Number: 20200292468
Disclosed are apparatus and methods for inspecting a sample. Locations corresponding to candidate defect events on a sample are provided from an inspector operable to acquire optical images from which such candidate defect events are detected at their corresponding locations across the sample. High-resolution images are acquired from a high-resolution inspector of the candidate defect events at their corresponding locations on the sample. Each of a set of modelled optical images, which…

SYSTEM, METHOD AND NON-TRANSITORY COMPUTER READABLE MEDIUM FOR TUNING SENSITIVIES OF, AND DETERMINING A PROCESS WINDOW FOR, A MODULATED WAFER

Granted: August 13, 2020
Application Number: 20200258792
A system, method, and non-transitory computer readable medium are provided for tuning sensitivities of, and determining a process window for, a modulated wafer. The sensitivities for dies of the modulated wafer are tuned dynamically based on a single set of parameters. Further, the process window is determined for the modulated wafer from prior determined parameter-specific nominal process windows.

CORRELATING SEM AND OPTICAL IMAGES FOR WAFER NOISE NUISANCE IDENTIFICATION

Granted: December 19, 2019
Application Number: 20190383753
Disclosed are apparatus and methods for inspecting a semiconductor sample. Locations corresponding to candidate defect events on a semiconductor sample are provided from an optical inspector operable to acquire optical images from which such candidate defect events are detected at their corresponding locations across the sample. High-resolution images are acquired from a high-resolution inspector of the candidate defect events at their corresponding locations on the sample. Each of a set…

PHASE FILTER FOR ENHANCED DEFECT DETECTION IN MULTILAYER STRUCTURE

Granted: November 21, 2019
Application Number: 20190355601
Disclosed are methods and apparatus for facilitating defect detection in a multilayer stack. The method includes selection of a set of structure parameters for modeling a particular multilayer stack and a particular defect contained within such particular multilayer stack and a set of operating parameters for an optical inspection system. Based on the set of structure and operating parameters, an electromagnetic simulation is performed of waves scattered from the particular multilayer…

SCAN STRATEGIES TO MINIMIZE CHARGING EFFECTS AND RADIATION DAMAGE OF CHARGED PARTICLE BEAM METROLOGY SYSTEM

Granted: September 12, 2019
Application Number: 20190279841
Disclosed are apparatus and methods for performing overlay metrology upon a target having at least two layers formed thereon. A target having a plurality of periodic structures for measuring overlay in at least two overlay directions is provided. A charged particle beam is scanned in a first direction across a plurality of scan swaths of the target and at a first tilt with respect to the target so that each edge of the periodic structures is scanned at an angle. The charged particle beam…

METHODS OF BANDGAP ANALYSIS AND MODELING FOR HIGH K METAL GATE

Granted: August 8, 2019
Application Number: 20190242938
Methods of precisely analyzing and modeling band gap energies and electrical properties of a thin film are provided. One method includes: obtaining a substrate and a thin film disposed above the substrate, the thin film including an interfacial layer above the substrate, and a high-k layer above the interfacial layer; determining a thickness of the thin film; analyzing the thin film using deep ultraviolet spectroscopy ellipsometry to determine the photon energy of reflected light; using…

Apparatus and Method for Two Dimensional Nanoindentation

Granted: July 25, 2019
Application Number: 20190226960
A two-dimensional nanoindentation measurement apparatus includes a first actuator that imparts a first force in a first direction, and a second actuator that imparts a second force in a second direction orthogonal to the first direction. A first elongate member has a first end attached to the first actuator and a second end attached to an indenter tip that engages the surface of the sample. A second elongate member includes a first end attached to the second actuator and a second end…

Direct Focusing with Image Binning in Metrology Tools

Granted: July 4, 2019
Application Number: 20190208108
Focusing methods and modules are provided for metrology tools and systems. Methods comprise capturing image(s) of at least two layers of a ROI in an imaging target, binning the captured image(s), deriving a focus shift from the binned captured image(s) by comparing the layers, and calculating a focus position from the derived focus shift. Disclosed methods are direct, may be carried out in parallel to a part of the overlay measurement process and provide fast and simple focus…

INSPECTION OF RETICLES USING MACHINE LEARNING

Granted: July 4, 2019
Application Number: 20190206041
Disclosed are methods and apparatus for inspecting a photolithographic reticle. A near field reticle image is generated via a deep learning process based on a reticle database image produced from a design database, and a far field reticle image is simulated at an image plane of an inspection system via a physics-based process based on the near field reticle image. The deep learning process includes training a deep learning model based on minimizing differences between the far field…

HERMETIC SEALING OF A NONLINEAR CRYSTAL FOR USE IN A LASER SYSTEM

Granted: March 28, 2019
Application Number: 20190094653
Disclosed are methods and apparatus for hermetically sealing a nonlinear optical (NLO) crystal for use in a laser system. A mounted NLO crystal, an enclosure base, a lid, and a plurality of window components are moved into an oven. A vacuum bake process is then performed on the mounted NLO crystal, enclosure base, lid, and plurality of window components until a humidity level that is less than a predefined amount is reached. The mounted NLO crystal, enclosure base, lid, and plurality of…

METHODS AND APPARATUS FOR POLARIZING RETICLE INSPECTION

Granted: January 3, 2019
Application Number: 20190003960
Disclosed are methods and apparatus for measuring and controlling polarization for inspection of a semiconductor sample. The method includes (i) setting up an inspection system in a specific mode of operation, (ii) incrementing a first waveplate of the system through a plurality of rotations while keeping a second waveplate of the system static, (iii) measuring an intensity signal from non-patterned areas of the sample for each rotation of the first waveplate, (iv) incrementing the…

METHODS AND APPARATUS FOR POLARIZED WAFER INSPECTION

Granted: December 20, 2018
Application Number: 20180364177
This system comprises an illumination optics subsystem for generating and directing an incident beam towards a defect on a surface of a wafer. The illumination optics subsystem includes a light source for generating the incident beam and one or more polarization components for adjusting a ratio and/or a phase difference for the incident beam's electric field components. The system includes a collection optics subsystem for collecting scattered light from the defect and/or surface in…

APPARATUS AND METHODS FOR MEASURING PHASE AND AMPLITUDE OF LIGHT THROUGH A LAYER

Granted: November 29, 2018
Application Number: 20180340886
In one embodiment, disclosed are apparatus, methods, and targets for determining a phase shift of a photomask having a phase-shift target. An inspection or metrology system is used to direct an incident beam towards the target and then detect a plurality of intensity measurements that are transmitted through the target in response to the incident beam. A phase shift value for the target may then be determined based on the intensity measurements.

INSPECTION OF PHOTOMASKS BY COMPARING TWO PHOTOMASKS

Granted: August 23, 2018
Application Number: 20180238816
Disclosed are methods and systems for inspecting photolithographic reticles. A first and second reticle that were fabricated with a same design are obtained. A first and second reticle image of the first and second reticles are also obtained. The first reticle image is compared to the second reticle image to output a difference image having a plurality of difference events corresponding to candidate defects on either the first or second reticle. An inspection report of the candidate…

PHASE CONTRAST MONITORING FOR EXTREME ULTRA-VIOLET (EUV) MASKS DEFECT INSPECTION

Granted: April 12, 2018
Application Number: 20180100814
Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle using an optical inspection tool. An inspection tool having a pupil filter positioned at an imaging pupil is used to obtain a test image or signal from an output beam that is reflected and scattered from a test portion of an EUV test reticle. The pupil filter is configured to provide phase contrast in the output beam. A reference image or signal is obtained for a reference reticle portion that is…

PERIODIC PATTERNS AND TECHNIQUE TO CONTROL MISALIGNMENT BETWEEN TWO LAYERS

Granted: April 12, 2018
Application Number: 20180100735
A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.

CRITICAL DIMENSION UNIFORMITY MONITORING FOR EXTREME ULTRA-VIOLET RETICLES

Granted: March 22, 2018
Application Number: 20180080759
Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD…

APPARATUS AND METHODS FOR INSPECTING RETICLES

Granted: March 22, 2018
Application Number: 20180082415
Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field is recovered for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle. The recovered reticle near field is then used to determine whether the test reticle or…