3D microscope including insertable components to provide multiple imaging and measurement capabilities
Granted: April 5, 2022
Patent Number:
11294161
A three-dimensional (3D) microscope includes various insertable components that facilitate multiple imaging and measurement capabilities. These capabilities include Nomarski imaging, polarized light imaging, quantitative differential interference contrast (q-DIC) imaging, motorized polarized light imaging, phase-shifting interferometry (PSI), and vertical-scanning interferometry (VSI).
Method and system for optical three dimensional topography measurement
Granted: March 29, 2022
Patent Number:
11287248
For three-dimensional topography measurement of a surface of an object patterned illumination is projected on the surface through an objective. A relative movement between the object and the objective is carried out, and plural images of the surface are recorded through the objective by a detector. The direction of the relative movement includes an oblique angle with an optical axis of the objective. Height information for a given position on the surface is derived from a variation of…
Off-axis illumination overlay measurement using two-diffracted orders imaging
Granted: March 22, 2022
Patent Number:
11281111
Metrology methods and tools are provided, which enhance the accuracy of the measurements and enable simplification of the measurement process as well as improving the correspondence between the metrology targets and the semiconductor devices. Methods comprise illuminating the target in a Littrow configuration to yield a first measurement signal comprising a ?1st diffraction order and a 0th diffraction order and a second measurement signal comprising a +1st distraction order and a 0th…
Systems and methods for predicting defects and critical dimension using deep learning in the semiconductor manufacturing process
Granted: March 15, 2022
Patent Number:
11275361
An initial inspection or critical dimension measurement can be made at various sites on a wafer. The location, design clips, process tool parameters, or other parameters can be used to train a deep learning model. The deep learning model can be validated and these results can be used to retrain the deep learning model. This process can be repeated until the predictions meet a detection accuracy threshold. The deep learning model can be used to predict new probable defect location or…
Wafer inspection using difference images
Granted: March 8, 2022
Patent Number:
11270430
Systems and methods increase the signal to noise ratio of optical inspection of wafers to obtain higher inspection sensitivity. The computed reference image can minimize a norm of the difference of the test image and the computed reference image. A difference image between the test image and a computed reference image is determined. The computed reference image includes a linear combination of a second set of images.
Boron-based capping layers for EUV optics
Granted: March 8, 2022
Patent Number:
11268911
Disclosed herein are optical elements and methods for making the same. Such optical elements may comprise a first layer disposed on a substrate, a second layer disposed on the first layer, a terminal layer disposed on the second layer, and a cap layer disposed on the terminal layer. The cap layer may comprise boron, boron nitride, or boron carbide. Such optical elements may be made using a method comprising depositing a first layer using vapor deposition such that the first layer is…
Inspection of reticles using machine learning
Granted: February 22, 2022
Patent Number:
11257207
Disclosed are methods and apparatus for inspecting a photolithographic reticle. A near field reticle image is generated via a deep learning process based on a reticle database image produced from a design database, and a far field reticle image is simulated at an image plane of an inspection system via a physics-based process based on the near field reticle image. The deep learning process includes training a deep learning model based on minimizing differences between the far field…
Resistivity probes with curved portions
Granted: February 15, 2022
Patent Number:
11249110
Resistivity probes can be used to test integrated circuits. In one example, a resistivity probe has a substrate with multiple vias and multiple metal pins. Each of the metal pins is disposed in one of the vias. The metal pins extend out of the substrate. Interconnects provide an electrical connection to the metal pins. In another example, a resistivity probe has a substrate with a top surface and multiple elements extending from the substrate. Each of the elements curves from the…
Machine learning in metrology measurements
Granted: February 15, 2022
Patent Number:
11248905
Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Machine learning algorithm application to measurements and/or simulations of metrology measurements of metrology targets are disclosed for deriving metrology data such as overlays from multi-layered target and…
Semiconductor inspection and metrology systems for distributing job among the CPUs or GPUs based on logical image processing boundaries
Granted: February 1, 2022
Patent Number:
11237872
Real-time job distribution software architectures for high bandwidth, hybrid processor computation systems for semiconductor inspection and metrology are disclosed. The imaging processing computer architecture can be scalable by changing the number of CPUs and GPUs to meet computing needs. The architecture is defined using a master node and one or more worker nodes to run image processing jobs in parallel for maximum throughput. The master node can receive input image data from a…
Expediting spectral measurement in semiconductor device fabrication
Granted: February 1, 2022
Patent Number:
11237120
A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.
Diagnostic methods for the classifiers and the defects captured by optical tools
Granted: February 1, 2022
Patent Number:
11237119
Wafer inspection with stable nuisance rates and defect of interest capture rates are disclosed. This technique can be used for discovery of newly appearing defects that occur during the manufacturing process. Based on a first wafer, defects of interest are identified based on the classified filtered inspection results. For each remaining wafer, the defect classifier is updated and defects of interest in the next wafer are identified based on the classified filtered inspection results.
Method of measuring misregistration of semiconductor devices
Granted: January 18, 2022
Patent Number:
11226566
A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration…
Repeater defect detection
Granted: December 21, 2021
Patent Number:
11204332
Defects from a hot scan can be saved, such as on persistent storage, random access memory, or a split database. The persistent storage can be patch-based virtual inspector virtual analyzer (VIVA) or local storage. Repeater defect detection jobs can determined and the wafer can be inspected based on the repeater defect detection jobs. Repeater defects can be analyzed and corresponding defect records to the repeater defects can be read from the persistent storage. These results may be…
Systems and methods for inspection of a specimen
Granted: December 21, 2021
Patent Number:
11204330
Systems and methods for inspection of a specimen are provided. One system includes an illumination subsystem configured to illuminate the specimen by scanning a spot across the specimen. The system also includes a non-imaging detection subsystem configured to generate output signals responsive to light specularly reflected from the spot scanned across the specimen. In addition, the system includes a processor configured to generate images of the specimen using the output signals and to…
Model-based metrology using images
Granted: December 14, 2021
Patent Number:
11200658
Methods and systems for combining information present in measured images of semiconductor wafers with additional measurements of particular structures within the measured images are presented herein. In one aspect, an image-based signal response metrology (SRM) model is trained based on measured images and corresponding reference measurements of particular structures within each image. The trained, image-based SRM model is then used to calculate values of one or more parameters of…
Target selection improvements for better design alignment
Granted: December 7, 2021
Patent Number:
11195268
Techniques and systems to achieve more accurate design alignment to an image by improved pixel-to-design alignment (PDA) target selection are disclosed. PDA targets in an image frame of a die can be biased to include a hotspot location in one of the PDA targets. The PDA targets can be evaluated for repetitive patterns by analyzing the uniqueness of the points used as the PDA targets.
Training a machine learning model with synthetic images
Granted: November 9, 2021
Patent Number:
11170255
Methods and systems for training a machine learning model using synthetic defect images are provided. One system includes one or more components executed by one or more computer subsystems. The one or more components include a graphical user interface (GUI) configured for displaying one or more images for a specimen and image editing tools to a user and for receiving input from the user that includes one or more alterations to at least one of the images using one or more of the image…
Measurement methodology of advanced nanostructures
Granted: October 26, 2021
Patent Number:
11156548
A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to…
Overlay measurement using multiple wavelengths
Granted: October 26, 2021
Patent Number:
11158548
A method of determining overlay (“OVL”) in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and ?1 diffraction patterns. A first and second…
