ETCH WITH PULSED BIAS
Granted: April 4, 2013
Application Number:
20130084708
A method for etching features into an etch layer through a patterned mask in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a main etch plasma. A bias greater than 600 volts is provided. The bias is pulsed at a frequency between 1 Hz and 20 kHz with a duty cycle less than 45%.
PREVENTION OF PARTICLE ADDERS WHEN CONTACTING A LIQUID MENISCUS OVER A SUBSTRATE
Granted: April 4, 2013
Application Number:
20130084392
A method for meniscus processing a substrate is provided. The method initiates with generating a meniscus spanning at least a length of the substrate. A pre-wetting liquid or vapor is dispensed. A substrate is moved through the dispensed pre-wetting liquid or vapor and the meniscus. The dispensed pre-wetting vapor condenses a pre-wetting liquid over a region of the substrate adjacent to a region of the substrate where the meniscus is generated. The pre-wetting liquid is deposited without…
APPARATUS AND METHODS FOR PROCESSING A SUBSTRATE
Granted: April 4, 2013
Application Number:
20130081655
Apparatus and methods for processing a substrate are described. The methods include generating a fluid meniscus between upper and lower proximity heads. Each of the upper and lower proximity heads has a length that extends up to at least a diameter of the substrate. The method further includes dispensing a pre-wetting fluid towards an edge region of the substrate to form a pre-wet fluid meniscus on the edge region. The method also includes progressively moving the substrate along a path…
APPARATUS FOR THE DEPOSITION OF A CONFORMAL FILM ON A SUBSTRATE AND METHODS THEREFOR
Granted: March 28, 2013
Application Number:
20130074769
A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck, the chuck being coupled to a cooling apparatus, is disclosed. The method includes flowing a first gas mixture into the plasma processing chamber at a first pressure, wherein the first gas mixture includes at least carbon, and wherein the first gas mixture has a condensation temperature. The method also includes cooling the chuck…
COMPONENT OF A SUBSTRATE SUPPORT ASSEMBLY PRODUCING LOCALIZED MAGNETIC FIELDS
Granted: March 21, 2013
Application Number:
20130072025
A component of a substrate support assembly such as a substrate support or edge ring includes a plurality of current loops incorporated in the substrate support and/or the edge ring. The current loops are laterally spaced apart and extend less than halfway around the substrate support or edge ring with each of the current loops being operable to induce a localized DC magnetic field of field strength less than 20 Gauss above a substrate supported on the substrate support during plasma…
THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING
Granted: March 21, 2013
Application Number:
20130072035
A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode…
APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE
Granted: March 21, 2013
Application Number:
20130072024
An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to…
HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
Granted: March 21, 2013
Application Number:
20130068750
A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature…
METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES
Granted: March 14, 2013
Application Number:
20130061873
In an apparatus and method for treating a wafer-shaped article, a spin chuck is provided for holding a wafer-shaped article in a predetermined orientation wherein a lower surface of the wafer-shaped article is spaced a predetermined distance from an upper surface of the spin chuck. A heating assembly comprising at least one infrared heater is mounted above the upper surface of the spin chuck and below a wafer-shaped article when mounted on the spin chuck. The heating assembly is…
METHOD FOR FORMING STAIR-STEP STRUCTURES
Granted: March 14, 2013
Application Number:
20130062735
A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall layer is formed over the organic mask. The sidewall layer of the hard mask is removed while leaving the top layer of the hardmask. The organic mask is trimmed The substrate is etched. The forming the hardmask, removing the sidewall layer, trimming the organic mask, and etching the substrate are repeated a plurality of times.
APPARATUS FOR TREATING SURFACES OF WAFER-SHAPED ARTICLES
Granted: March 14, 2013
Application Number:
20130062839
A device for processing wafer-shaped articles comprises a closed process chamber. The closed process chamber comprises a housing providing a gas-tight enclosure, a rotary chuck located within the closed process chamber and adapted to hold a wafer shaped article thereon, and an interior cover disposed within said closed process chamber. The interior cover is movable between a first position in which the rotary chuck communicates with an outer wall of the closed process chamber, and a…
APPARATUS INCLUDING GAS DISTRIBUTION MEMBER SUPPLYING PROCESS GAS AND RADIO FREQUENCY (RF) POWER FOR PLASMA PROCESSING
Granted: March 14, 2013
Application Number:
20130065396
A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor…
BARE ALUMINUM BAFFLES FOR RESIST STRIPPING CHAMBERS
Granted: March 7, 2013
Application Number:
20130056022
Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.
UNIVERSAL FLUID FLOW ADAPTOR
Granted: March 7, 2013
Application Number:
20130056087
A universal fluid flow adaptor may be formed of a single structure having a plurality of vertical conduits to receive a gas flow, the plurality of vertical conduits extending through the single structure from the top surface to the bottom surface, a plurality of horizontal conduits to receive a gas flow, the plurality of horizontal conduits extending through the first side, the second side, the first end, and the second end at an interior of the single structure, wherein one or more of…
LOW CONTAMINATION COMPONENTS FOR SEMICONDUCTOR PROCESSSING APPARATUS AND METHODS FOR MAKING COMPONENTS
Granted: March 7, 2013
Application Number:
20130059071
Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical…
METHOD AND APPARATUS FOR REDUCTION OF VOLTAGE POTENTIAL SPIKE DURING DECHUCKING
Granted: March 7, 2013
Application Number:
20130059447
Provided is a substrate dechucking system of a plasma processing chamber adapted to remove a substrate from an ESC with reduction in voltage potential spike during dechucking of the substrate.
Pulsed Plasma Chamber in Dual Chamber Configuration
Granted: March 7, 2013
Application Number:
20130059448
Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period…
ETCH PROCESS FOR 3D FLASH STRUCTURES
Granted: March 7, 2013
Application Number:
20130059450
A method for etching features in a plurality of silicon based bilayers forming a stack on a wafer in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a plasma, while providing a first pressure. A wafer temperature of less than 20° C. is maintained. The pressure is ramped to a second pressure less than the first pressure as the plasma etches through a plurality of the plurality of silicon based…
METHOD AND DEVICE FOR WET TREATMENT OF PLATE-LIKE ARTICLES
Granted: February 28, 2013
Application Number:
20130048607
A method and device for wet treatment of a plate-like article comprises a spin chuck for holding and rotating the plate-like article. Gas supply nozzles open on a surface of the spin chuck facing a first side of the plate-like article. The spin chuck is configured to direct gas discharged from the gas supply nozzles radially outwardly through a gap defined between an upper surface of the spin chuck and a downwardly facing surface of a plate-like article positioned on the spin chuck.…
METHODS FOR ATOMIC LAYER DEPOSITION
Granted: February 14, 2013
Application Number:
20130040460
A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is…
