Depositing a carbon hardmask by high power pulsed low frequency RF
Granted: December 5, 2023
Patent Number:
11837441
Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.
Determination of recipes for manufacturing semiconductor devices
Granted: December 5, 2023
Patent Number:
11836429
Methods, systems, and computer programs are presented for determining the recipe for manufacturing a semiconductor with the use of machine learning (ML) to accelerate the definition of recipes. One general aspect includes a method that includes an operation for performing experiments for processing a component, each experiment controlled by a recipe, from a set of recipes, that identifies parameters for manufacturing equipment. The method further includes an operation for performing…
Protective coating for electrostatic chucks
Granted: December 5, 2023
Patent Number:
11835868
An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.
Systems and methods for pulse width modulated dose control
Granted: December 5, 2023
Patent Number:
11834736
A substrate processing system for treating a substrate includes a manifold, a plurality of injector assemblies located in a processing chamber, and a dose controller. Each of the plurality of injector assemblies is in fluid communication with the manifold and includes a valve including an inlet and an outlet. The dose controller is configured to communicate with the valve in each of the plurality of injector assemblies. The dose controller is configured to adjust a pulse width supplied…
Wafer handling robot with radial gas curtain and/or interior volume control
Granted: December 5, 2023
Patent Number:
11833662
A collar may be provided having an aperture through it through which the turret of a wafer handling robot may be extended or retracted. The collar may have one or more radial gas passages. Gas directed inwards towards the turret from the radial passage(s) may turn downward when it strikes the turret. A bellows may be optionally affixed to the bottom of the turret and to the bottom of the base such that the volume of the base occupied by the turret and the bellows remains generally fixed…
Conformal damage-free encapsulation of chalcogenide materials
Granted: November 28, 2023
Patent Number:
11832533
Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a…
Carrier ring designs for controlling deposition on wafer bevel/edge
Granted: November 28, 2023
Patent Number:
11830759
Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are…
Systems and methods for homogenous intermixing of precursors in alloy atomic layer deposition
Granted: November 28, 2023
Patent Number:
11827976
A method includes arranging a substrate in a processing chamber, and exposing the substrate to a gas mixture including a first metal precursor gas and a second metal precursor gas to deposit a first metal precursor and a second metal precursor onto the substrate at the same time. The method further includes purging the processing chamber, supplying a reactant common to both the first metal precursor and the second metal precursor to form a layer of an alloy on the substrate, and purging…
Selective processing with etch residue-based inhibitors
Granted: November 21, 2023
Patent Number:
11823909
Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be…
Control of wafer bow in multiple stations
Granted: November 21, 2023
Patent Number:
11823928
A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations…
Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures
Granted: November 21, 2023
Patent Number:
11823892
A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the…
Real-time control of temperature in a plasma chamber
Granted: November 21, 2023
Patent Number:
11823875
Systems and methods for real-time control of temperature within a plasma chamber are described. One of the methods includes sensing a voltage in real time of a rail that is coupled to a voltage source. The voltage source supplies a voltage to multiple heater elements of the plasma chamber. The voltage that is sensed is used to adjust one or more duty cycles of corresponding one or more of the heater elements. The adjusted one or more duty cycles facilitate achieving and maintaining a…
Precursors for deposition of molybdenum-containing films
Granted: November 21, 2023
Patent Number:
11821071
Molybdenum-containing films are deposited on semiconductor substrates using reactions of molybdenum-containing precursors in ALD and CVD processes. In some embodiments, the precursors can be used for deposition of molybdenum metal films with low levels of incorporation of carbon and nitrogen. In some embodiments, the films are deposited using fluorine-free precursors in a presence of exposed silicon-containing layers without using etch stop layers. The precursor, in some embodiments, is…
Knurling edge driving tool
Granted: November 21, 2023
Patent Number:
11819970
A tool for driving a component with a knurling pattern around an outer surface of the component is provided. A shaft, with a first end, is in the form of at least a partial cylinder, where the at least partial cylinder has a first inner diameter that is less than an outer diameter of the knurling pattern. Serrations in the shaft have a pattern that matches the knurling pattern, which allow the serration in the shaft to engage with the knurling pattern so that when the shaft is rotated,…
Electrostatic chuck for use in semiconductor processing
Granted: November 14, 2023
Patent Number:
11817341
A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made…
Wafer cleaning method and apparatus therefore
Granted: November 7, 2023
Patent Number:
11810796
The present invention relates to a method for treating the surface of a wafer with multiple liquids, comprising rotating the surface of the wafer and discharging different liquid streams onto the rotating surface in a sequence from separate outlets, wherein the discharge of liquid streams which are contiguous in the sequence overlaps during a transition phase, and wherein during the transition phase the liquid streams merge after exiting said outlets to form a merged liquid stream before…
Non-elastomeric, non-polymeric, non-metallic membrane valves for semiconductor processing equipment
Granted: October 24, 2023
Patent Number:
11796085
An apparatus may be provided that includes a substrate having one or more microfluidic valve structures. The valve structures are non-elastomeric, non-polymeric, non-metallic membrane valves for use in high-vacuum application. Such valves are functional even when the fluid-control side of the valve is exposed to a sub-atmospheric pressure field which may generally act to collapse/seal traditional elastomeric membrane valve.
Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
Granted: October 24, 2023
Patent Number:
11798789
A first edge ring for a substrate support is provided. The first edge ring includes an annular-shaped body and one or more lift pin receiving elements. The annular-shaped body is sized and shaped to surround an upper portion of the substrate support. The annular-shaped body defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The one or more lift pin receiving elements are disposed along the lower surface of the annular-shaped body and sized…
Systems for reverse pulsing
Granted: October 24, 2023
Patent Number:
11798785
Systems and methods for reverse pulsing are described. One of the systems includes a controller, first and second source radio frequency (RF) generators, and first and second bias RF generators. The controller controls the first source RF generator to generate a first source pulsed signal, and controls the second source RF generator to generate a second source pulsed signal. The system includes a first match circuit that receives the first and second source pulsed signals and combines…
Methods and apparatus for controlling plasma in a plasma processing system
Granted: October 24, 2023
Patent Number:
11798784
Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively…
