Selective processing with etch residue-based inhibitors
Granted: October 29, 2024
Patent Number:
12131909
Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be…
Chuck for plasma processing chamber
Granted: October 29, 2024
Patent Number:
12131890
An electrostatic chuck system for a plasma processing chamber is provided. A base plate comprising Al—SiC is provided. A ceramic plate is disposed over the base plate. A bonding layer bonds the ceramic plate to the base plate.
Systems and methods for extracting process control information from radiofrequency supply system of plasma processing system
Granted: October 29, 2024
Patent Number:
12131886
A first radiofrequency signal generator is set to generate a low frequency signal. A second radiofrequency signal generator is set to generate a high frequency signal. An impedance matching system has a first input connected to an output of the first radiofrequency signal generator and a second input connected to an output of the second radiofrequency signal generator. The impedance matching system controls impedances at the outputs of the first and second radiofrequency signal…
Method for conditioning semiconductor processing chamber components
Granted: October 29, 2024
Patent Number:
12129569
A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10?6/K. A metal oxide layer is then disposed over a surface of the component body.
Resistive random access memory with preformed filaments
Granted: October 22, 2024
Patent Number:
12127486
A method for fabricating a plurality of resistive random access memory (RRAM) cells includes providing a substrate including a memory medium arranged on an underlying layer; creating channel holes in the memory medium having a first critical dimension in a range from 1 nm to 20 nm; depositing switching material defining a filament of the RRAM cells in the channel holes; depositing a top electrode of the RRAM cells on the memory medium and the switching material; and separating adjacent…
Reducing roughness of extreme ultraviolet lithography resists
Granted: October 22, 2024
Patent Number:
12125711
Provided herein are methods and systems for reducing roughness of EUV resists and improving etched features. The methods may involve depositing a thin film on a patterned EUV resist having a stress level that is less compressive than a stress level of the patterned EUV resist. The resulting composite stress may reduce buckling and/or bulging of the patterned EUV resist.
Method for providing doped silicon using a diffusion barrier layer
Granted: October 22, 2024
Patent Number:
12125705
A method for doping a substrate is provided. A silicon oxide diffusion barrier layer is formed on a surface of the substrate. At least one dopant layer is deposited over the silicon oxide diffusion barrier layer. A cap layer is deposited over the at least one dopant layer forming a stack of the substrate, the silicon oxide diffusion layer, the at least one dopant layer, and the cap layer. The stack is annealed. The cap layer, at least one dopant layer, and the silicon oxide diffusion…
Measurement system to measure a thickness of an adjustable edge ring for a substrate processing system
Granted: October 22, 2024
Patent Number:
12123709
A measurement system to measure at least one of a height and a thickness of an edge ring in a plasma processing chamber includes an ultrasound transducer configured to output an ultrasound signal into the edge ring and to receive a reflected signal from the edge ring. A controller is configured to cause the ultrasound transducer to generate the ultrasound signal and to determine a thickness of the edge ring based on timing of the ultrasound signal and the reflected signal.
Etching isolation features and dense features within a substrate
Granted: October 15, 2024
Patent Number:
12119232
Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features.…
Plasma etching chemistries of high aspect ratio features in dielectrics
Granted: October 15, 2024
Patent Number:
12119243
A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.
Sacrificial protection layer for environmentally sensitive surfaces of substrates
Granted: October 15, 2024
Patent Number:
12119218
A method for protecting a surface of a substrate during processing includes a) providing a solution forming a co-polymer having a ceiling temperature; b) dispensing the solution onto a surface of the substrate to form a sacrificial protective layer, wherein the co-polymer is kinetically trapped to allow storage at a temperature above the ceiling temperature; c) exposing the substrate to ambient conditions for a predetermined period; and d) de-polymerizing the sacrificial protective layer…
Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
Granted: October 15, 2024
Patent Number:
12116669
A showerhead for a substrate processing system includes a lower surface, a plasma-facing upper surface, a gas plenum defined between the lower surface and the upper surface, and a plurality of injectors distributed on the lower surface, wherein the plurality of injectors are in fluid communication with the gas plenum. A plurality of through holes extends from the upper surface to the lower surface. Selected ones of the plurality of through holes have a diameter that is different from a…
Method to create air gaps
Granted: October 8, 2024
Patent Number:
12112980
Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an H2-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an…
Pedestals for modulating film properties in atomic layer deposition (ALD) substrate processing chambers
Granted: October 8, 2024
Patent Number:
12110586
A system to deposit a film on a substrate using atomic layer deposition includes a pedestal arranged in a processing chamber to support the substrate on a top surface of the pedestal when depositing the film on the substrate. A first annular recess in the pedestal extends downwardly from the top surface of the pedestal and radially inwardly from an outer edge of the pedestal towards an outer edge of the substrate. The first annular recess has an inner diameter that is greater than a…
RF reference measuring circuit for a direct drive system supplying power to generate plasma in a substrate processing system
Granted: October 1, 2024
Patent Number:
12106947
A substrate processing system includes a drive circuit, an RF reference measuring circuit, and a make-break connector. The drive circuit generates an RF drive signal at a first RF frequency. The RF reference measuring circuit includes an LC circuit having an input impedance and an output impedance. An output of the LC circuit connects to an RF power meter and a dummy load. The make-break connector connects the drive circuit to one of the RF reference measuring circuit and a processing…
Turbomolecular pump and cathode assembly for etching reactor
Granted: October 1, 2024
Patent Number:
12106946
A processing chamber and method of etching a semi-conductor substrate are presented. The processing chamber is symmetric, with the centerlines of a chuck and stem of a stage to retain a semi-conductor substrate aligned with a centerline of a passage in a core of a pump used to evacuate the processing chamber and with a center-line of a gas port through which gas is introduced to the processing chamber. The stem extends through the passage and a spiral groove is formed in the passage in…
Photoresist development with halide chemistries
Granted: October 1, 2024
Patent Number:
12105422
Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing…
Systems and methods for in-situ measurement of sheet resistance on substrates
Granted: October 1, 2024
Patent Number:
12105039
In some examples, a Vacuum Pre-treatment Module (VPM) metrology system is provided for measuring a sheet resistance of a layer on a substrate. The system may comprise an eddy sensor including a sender sensor and a receiver sensor defining a gap between them for accepting an edge of a substrate to be tested. A sensor controller receives measurement signals from the eddy sensor. A data processor processes the measurement signals and generates sheet resistance values for the layer on the…
Plasma processing devices having multi-port valve assemblies
Granted: September 24, 2024
Patent Number:
12100575
A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a…
Autoclean for load locks in substrate processing systems
Granted: September 17, 2024
Patent Number:
12094739
A method for cleaning a load lock in a substrate processing system includes, in a first period, opening a first valve in fluid communication with a gas source to supply gas through a first vent into a gas volume of the load lock. The gas is supplied at a pressure and flow rate sufficient to disturb particles from surfaces of the load lock. The method includes, in a second period subsequent to the first period and with the first valve opened, opening a second valve in fluid communication…
