System and Method for Protection of Vacuum Seals in Plasma Processing Systems
Granted: January 14, 2016
Application Number:
20160013025
Systems and methods for protecting vacuum seals in a plasma processing system are provided. The processing system can include a vacuum chamber defining a sidewall and an inductive coil wrapped around at least a portion of the sidewall. A vacuum seal can be positioned between the sidewall of the vacuum chamber and a heat sink. A thermally conductive bridge can be coupled between the sidewall and heat sink. Further, the thermally conductive bridge can be positioned relative to the vacuum…
APPARATUS AND METHODS FOR GENERATING ELECTROMAGNETIC RADIATION
Granted: February 5, 2015
Application Number:
20150035436
An apparatus for generating electromagnetic radiation includes an envelope, a vortex generator configured to generate a vortexing flow of liquid along an inside surface of the envelope, first and second electrodes within the envelope configured to generate a plasma arc therebetween, and an insulative housing associated surrounding at least a portion of an electrical connection to one of the electrodes. The apparatus further includes a shielding system configured to block electromagnetic…
Heating Configuration for Use in Thermal Processing Chambers
Granted: September 4, 2014
Application Number:
20140246422
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
LOW COST HIGH THROUGHPUT PROCESSING PLATFORM
Granted: June 5, 2014
Application Number:
20140151195
As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined…
METHODS, APPARATUS AND MEDIA FOR DETERMINING A SHAPE OF AN IRRADIANCE PULSE TO WHICH A WORKPIECE IS TO BE EXPOSED
Granted: November 21, 2013
Application Number:
20130306871
A method and system for determining a shape of an irradiance pulse to which a semiconductor wafer is to be exposed during a thermal cycle are disclosed. The method includes receiving, with a processor circuit, thermal cycle parameters specifying requirements of the thermal cycle, and determining, with the processor circuit, a shape of a heating portion of the irradiance pulse. Determining includes optimizing at least one parameter of a flux profile model of the heating portion of the…
SLOTTED ELECTROSTATIC SHIELD MODIFICATION FOR IMPROVED ETCH AND CVD PROCESS UNIFORMITY
Granted: August 1, 2013
Application Number:
20130196510
A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process…
System and Process for Calibrating Pyrometers in Thermal Processing Chambers
Granted: January 31, 2013
Application Number:
20130028286
A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement…
METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES
Granted: November 29, 2012
Application Number:
20120298039
Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by…
System and Process For Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy
Granted: October 4, 2012
Application Number:
20120252229
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
METHOD AND SYSTEM FOR DETERMINING OPTICAL PROPERTIES OF SEMICONDUCTOR WAFERS
Granted: September 13, 2012
Application Number:
20120231558
A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high…
Methods For Determining Wafer Temperature
Granted: August 9, 2012
Application Number:
20120201271
Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to…
INDUCTIVELY COUPLED PLASMA SOURCE FOR PLASMA PROCESSING
Granted: June 21, 2012
Application Number:
20120152901
Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive…
ENDEFFECTORS FOR HANDLING SEMICONDUCTOR WAFERS
Granted: May 24, 2012
Application Number:
20120126555
Various endeffector designs are disclosed for handling semiconductor wafers. For instance, an endeffector for handling wafers at a relatively low temperature is disclosed along with an endeffector for handling wafers at a relatively high temperature. Both endeffectors include uniquely designed support members that are configured to only contact a wafer at the wafer's edge. The endeffectors may also include a wafer detection system. The endeffector for handling wafers at relatively low…
METHODS AND SYSTEMS FOR SUPPORTING A WORKPIECE AND FOR HEAT-TREATING THE WORKPIECE
Granted: May 17, 2012
Application Number:
20120118867
An apparatus for supporting a semiconductor workpiece includes a heating system configured to cause thermally-induced motion of the semiconductor workpiece by heating a surface of the workpiece relative to a bulk of the workpiece. The thermally-induced motion includes vertical motion of an outer edge region of the workpiece and a center of the workpiece relative to each other. The apparatus further includes a support system configured to allow the thermally-induced motion including the…
IRRADIANCE PULSE HEAT-TREATING METHODS AND APPARATUS
Granted: November 10, 2011
Application Number:
20110274417
A method of heat-treating a workpiece includes generating an initial heating portion and a subsequent sustaining portion of an irradiance pulse incident on a target surface area of the workpiece. A combined duration of the initial heating portion and the subsequent sustaining portion is less than a thermal conduction time of the workpiece. The initial heating portion heats the target surface area to a desired temperature and the subsequent sustaining portion maintains the target surface…
SYSTEM AND PROCESS FOR CALIBRATING PYROMETERS IN THERMAL PROCESSING CHAMBERS
Granted: September 8, 2011
Application Number:
20110216803
A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement…
HIGH-INTENSITY ELECTROMAGNETIC RADIATION APPARATUS AND METHODS
Granted: November 4, 2010
Application Number:
20100276611
An apparatus for producing electromagnetic radiation includes a flow generator configured to generate a flow of liquid along an inside surface of an envelope, first and second electrodes configured to generate an electrical arc within the envelope to produce the electromagnetic radiation, and an exhaust chamber extending outwardly beyond one of the electrodes, configured to accommodate a portion of the flow of liquid. In another aspect, the flow generator is electrically insulated. In…
SYSTEM AND METHOD FOR REDUCING OBJECT DEFORMATION DURING A PULSED HEATING PROCESS
Granted: October 7, 2010
Application Number:
20100252547
An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the…
SYSTEM AND PROCESS FOR CALIBRATING PYROMETERS IN THERMAL PROCESSING CHAMBERS
Granted: September 16, 2010
Application Number:
20100232470
A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement…
ELECTROSTATIC CHUCK SYSTEM AND PROCESS FOR RADIALLY TUNING THE TEMPERATURE PROFILE ACROSS THE SURFACE OF A SUBSTRATE
Granted: August 5, 2010
Application Number:
20100193501
An electrostatic chuck system for maintaining a desired temperature profile across the surface of the substrate is disclosed. The electrostatic chuck system includes a pedestal support defining a substantially uniform temperature profile across the surface of the pedestal support and an electrostatic chuck supported by the pedestal support. The electrostatic chuck has a clamping electrode and a plurality of independently controlled heating electrodes. The independently controlled heating…
