Pulsed processing semiconductor heating methods using combinations of heating sources
Granted: September 16, 2014
Patent Number:
8837923
Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first…
Methods for forming microlenses
Granted: August 12, 2014
Patent Number:
8801947
Methods for forming microlenses on a semiconductor substrate are provided. An inductively coupled plasma etch process using a process gas that includes a mixture of CF4 and CHF3 can be used to modify the lens shape of a plurality of microlens objects located on a semiconductor substrate to meet microlens specifications in terms of curvature, height, length, shape, and/or distance between adjacent microlens objects on the substrate. The inductively coupled plasma process can be performed…
Method and system for determining optical properties of semiconductor wafers
Granted: April 15, 2014
Patent Number:
8696197
A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high…
Irradiance pulse heat-treating methods and apparatus
Granted: April 8, 2014
Patent Number:
8693857
A method of heat-treating a workpiece includes generating an initial heating portion and a subsequent sustaining portion of an irradiance pulse incident on a target surface area of the workpiece. A combined duration of the initial heating portion and the subsequent sustaining portion is less than a thermal conduction time of the workpiece. The initial heating portion heats the target surface area to a desired temperature and the subsequent sustaining portion maintains the target surface…
System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
Granted: March 11, 2014
Patent Number:
8669496
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
Low cost high throughput processing platform
Granted: March 11, 2014
Patent Number:
8668422
As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined…
Methods for determining wafer temperature
Granted: March 11, 2014
Patent Number:
8668383
Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to…
Endeffectors for handling semiconductor wafers
Granted: January 7, 2014
Patent Number:
8622451
An endeffector for handling wafers at a relatively low temperature is disclosed along with an endeffector for handling wafers at a relatively high temperature. Both endeffectors include a base member and uniquely designed support members that are configured to only contact a wafer at the wafer's edge. Further, the support members have an arcuate shape that generally matches a radius of a semiconductor wafer. More specifically, each support member has a curved wafer contact surface that…
Monitoring witness structures for temperature control in RTP systems
Granted: November 5, 2013
Patent Number:
8575521
Temperature control in an RTP system can be improved by consideration of one or more witness structures different from the wafer (or other semiconductor object) being processed. For example, power coupling between the RTP heating system and witness structure can be used to adjust one or more control parameters, such as model definitions, that are used by the RTP system to control wafer heating. As another example, a stored trajectory of a desired witness structure temperature or other…
Rapid thermal processing using energy transfer layers
Granted: October 15, 2013
Patent Number:
8557721
A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at…
Systems and methods for supporting a workpiece during heat-treating
Granted: June 4, 2013
Patent Number:
8454356
An apparatus for supporting a workpiece during heat-treating includes a support plate having a non-planar upper surface, and a support system. The support system is configured to support the workpiece above the support plate during heat-treating of the workpiece, such that a lower surface of an initial shape of the workpiece is supported at a non-uniform spacing above the non-planar upper surface of the support plate, said non-uniform spacing including an edge gap beneath an outer…
Inductive plasma source with high coupling efficiency
Granted: May 21, 2013
Patent Number:
8444870
A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the…
Methods and systems for supporting a workpiece and for heat-treating the workpiece
Granted: May 7, 2013
Patent Number:
8434341
An apparatus for supporting a semiconductor workpiece includes a heating system configured to cause thermally-induced motion of the semiconductor workpiece by heating a surface of the workpiece relative to a bulk of the workpiece. The thermally-induced motion includes vertical motion of an outer edge region of the workpiece and a center of the workpiece relative to each other. The apparatus further includes a support system configured to allow the thermally-induced motion including the…
Slotted electrostatic shield modification for improved etch and CVD process uniformity
Granted: April 9, 2013
Patent Number:
8413604
A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process…
Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate
Granted: March 26, 2013
Patent Number:
8405005
An electrostatic chuck system for maintaining a desired temperature profile across the surface of the substrate is disclosed. The electrostatic chuck system includes a pedestal support defining a substantially uniform temperature profile across the surface of the pedestal support and an electrostatic chuck supported by the pedestal support. The electrostatic chuck has a clamping electrode and a plurality of independently controlled heating electrodes. The independently controlled heating…
High-intensity electromagnetic radiation apparatus and methods
Granted: February 26, 2013
Patent Number:
8384274
An apparatus for producing electromagnetic radiation includes a flow generator configured to generate a flow of liquid along an inside surface of an envelope, first and second electrodes configured to generate an electrical arc within the envelope to produce the electromagnetic radiation, and an exhaust chamber extending outwardly beyond one of the electrodes, configured to accommodate a portion of the flow of liquid. In another aspect, the flow generator is electrically insulated. In…
Method and apparatus for determining measurement values
Granted: December 18, 2012
Patent Number:
8335658
The present invention describes a method for determining a value for the temperature, radiation, emissivity, transmissivity and/or reflectivity of an object (2) such as a semiconductor wafer in a rapid heating system (1), wherein an output signal from a radiation detector (50) which records temperature radiation from the object is used as a measurement value, and wherein prediction values for the measurement values are calculated in a model system (100). The development over time of the…
System and process for calibrating pyrometers in thermal processing chambers
Granted: October 23, 2012
Patent Number:
8296091
A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement…
Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures
Granted: August 7, 2012
Patent Number:
8236706
Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by…
System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
Granted: July 17, 2012
Patent Number:
8222570
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
