Force-feedback seismometer
Granted: April 17, 2012
Patent Number:
8159904
A broadband weak-motion seismometer includes: a frame, a mass, a suspension means for movably connecting the mass to the frame, a sensing transducer for measuring displacement of the mass with respect to the frame and for generating a sensing transducer output signal, which is a function of the measured displacement, a forcing transducer for applying a feedback force in a predetermined direction to the mass, and a control circuit. The control circuit receives the sensing transducer…
Modeling conductive patterns using an effective model
Granted: February 28, 2012
Patent Number:
8126694
A model of a sample with a periodic or non-periodic pattern of conductive and transparent materials is produced based on the effect that the pattern has on TE polarized incident light. The model of the pattern may include a uniform film of the transparent material and an underlying uniform film of the conductive material. When the pattern has periodicity in two directions, the model may include a uniform film of the transparent material and an underlying portion that based on the…
Multi layer alignment and overlay target and measurement method
Granted: January 31, 2012
Patent Number:
8107079
A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target…
In-plane optical metrology
Granted: November 29, 2011
Patent Number:
8068228
A structure that is located adjacent to a measurement target on a substrate is used to convert incident radiation from an optical metrology device to be in-plane with the measurement target. The structure may be, e.g., a grating or photonic crystal, and may include a waveguide between the structure and the measurement target. The in-plane light interacts with the measurement target and is reflected back to the structure, which converts the in-plane light to out-of-plane light that is…
Measurement of a sample using multiple models
Granted: November 22, 2011
Patent Number:
8062910
A sample that is processed to remove a top layer, e.g., using chemical mechanical polishing or etching, is accurately measured using multiple models of the sample. The multiple models may be constrained based on a pre-processing measurement of the sample. By way of example, the multiple models of the sample may be linked in pairs, where one pair includes a model simulating the pre-processed sample and another model simulating the post-processed sample with a portion of the top layer…
Method for automatically de-skewing of multiple layer wafer for improved pattern recognition
Granted: October 25, 2011
Patent Number:
8045790
A method for processing wafers includes learning a first pattern at a de-skew site on a first wafer layer, saving the first patterns in a recipe for de-skewing wafers, learning a second pattern at the de-skew site a second wafer layer, and saving the second pattern in the same recipe for de-skewing wafers. Learning the first pattern may include determining a score of uniqueness for the first pattern. The method further includes finding the de-skew site on the second wafer layer using the…
Method for evaluating microstructures on a workpiece based on the orientation of a grating on the workpiece
Granted: September 27, 2011
Patent Number:
8027037
In a measuring system, a method for evaluating parameters of a workpiece includes measuring a periodic structure, such as a grating, on the workpiece to produce image data. An orientation of features in the image data, produced by higher order diffractions from the periodic structure, is identified. An orientation of the periodic structure is determined based on the orientation of the features in the image data. The image data is then modified, based on the orientation of the periodic…
Seismic sensor
Granted: January 18, 2011
Patent Number:
7870789
A seismic sensor includes a frame, a pendulum pivotably mounted to the frame, a mechanism for sensing angular position of the pendulum, and a monolithic flat spring oriented between the frame and the pendulum for balancing the pendulum at an equilibrium position. The monolithic flat spring includes: (i) an operating region for providing a restoring force to the pendulum proportional to an angular displacement of the pendulum; and (ii) a suspension region for transmitting a force to a…
Overlay measurement target
Granted: December 7, 2010
Patent Number:
7847939
In an overlay metrology method used during semiconductor device fabrication, an overlay alignment mark facilitates alignment and/or measurement of alignment error of two layers on a semiconductor wafer structure, or different exposures on the same layer. A target is small enough to be positioned within the active area of a semiconductor device combined with appropriate measurement methods, which result in improved measurement accuracy.
Sealing ring assembly and mounting method
Granted: November 30, 2010
Patent Number:
7842179
A sealing ring assembly and an improved method for mounting a sealing ring into an electrochemical cell used for Electrochemical Capacitance Voltage (ECV) profiling measurements. The ring is located in a holder having at least one secondary bore providing fluid communication between a forward face of the holder and the central bore of the ring, directed parallel to but tangentially offset relative to the inner wall of the central bore so as to impart a degree of rotational flow to…
Determining overlay error using an in-chip overlay target
Granted: October 5, 2010
Patent Number:
7808643
Overlay error between two layers on a substrate is measured using an image of an overlay target in an active area of a substrate. The overlay target may be active features, e.g., structures that cause the device to function as desired when manufacturing is complete. The active features may be permanent structures or non-permanent structures, such as photoresist, that are used define the permanent structures during manufacturing. The image of the overlay target is analyzed by measuring…
Focusing system and method
Granted: September 28, 2010
Patent Number:
7804641
A method of automatically focusing a microscope in which a beam of light is directed from a light source through an objective of the microscope system to an object whereby light is reflected from the surface thereof; reflected light is collected and directed to an imaging system. The incident beam of light is limited in spatial extent by imaging an aperture to form an illumination pupil, the centroid of illumination of the illumination pupil is aligned with the incident optical axis of…
Non-contact apparatus and method for measuring a property of a dielectric layer on a wafer
Granted: July 6, 2010
Patent Number:
7751061
Non-contact apparatus and methods for evaluating at least one of the DC (or RF) dielectric constant, the hardness, and Young's Modulus of a dielectric material on a microelectronic workpiece under process and for generating a correlation factor that relates a measured IR spectrum to at least one of the dielectric constant, the hardness, and Young's Modulus of the dielectric material. A specific example of a method comprises measuring a thickness of the dielectric material on the process…
Monitoring apparatus and method for improving the accuracy and repeatability of electrochemical capacitance voltage (ECV) measurements
Granted: May 11, 2010
Patent Number:
7713404
An apparatus and method for improving the accuracy of Electrochemical Capacitance Voltage (ECV) profiling measurements by alerting the operator to the presence of surface films or gas bubbles during the etching process and by using this in-situ monitoring apparatus to determine the true measurement area at the end of the measurement cycle and using the new value to recalculate the data. By making the area measurement integral to the ECV tool, every sample measurement can be corrected for…
Scanning focal length metrology
Granted: April 13, 2010
Patent Number:
7697135
An optical metrology system collects spectral data while scanning over the focal range. The spectral data is evaluated to determine a plurality of peak intensity values for wavelengths in the spectra. The peak intensities are then combined to form the measured spectrum for the sample, which can then be used to determine the sample properties of interest. In one embodiment, the peak intensity is determined based on the measured maximum intensity and a number n of intensity values around…
Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor
Granted: February 16, 2010
Patent Number:
7663385
The present disclosure provides methods and apparatus that enable characterization of an electrical property of a semiconductor specimen, e.g., dopant concentration of a near-surface region of the specimen. In exemplary method, a target depth for measurement is selected. This thickness may, for example, correspond to a nominal production thickness of a thin active device region of the specimen. A light is adjusted to an intensity selected to characterize a target region of the specimen…
Method for evaluating microstructures on a workpiece based on the orientation of a grating on the workpiece
Granted: February 2, 2010
Patent Number:
7656542
In a measuring system, a method for evaluating parameters of a workpiece includes measuring a periodic structure, such as a grating, on the workpiece to produce image data. An orientation of features in the image data, produced by higher order diffractions from the periodic structure, is identified. An orientation of the periodic structure is determined based on the orientation of the features in the image data. The image data is then modified, based on the orientation of the periodic…
Line profile asymmetry measurement
Granted: December 29, 2009
Patent Number:
7639371
This disclosure provides methods for measuring asymmetry of features, such as lines of a diffraction grating. On implementation provides a method of measuring asymmetries in microelectronic devices by directing light at an array of microelectronic features of a microelectronic device. The light illuminates a portion of the array that encompasses the entire length and width of a plurality of the microelectronic features. Light scattered back from the array is detected. One or more…
Apparatus and method for enhanced critical dimension scatterometry
Granted: November 10, 2009
Patent Number:
7615752
Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory…
Inertial sensor having a flexing element supporting a movable mass
Granted: September 29, 2009
Patent Number:
7594438
A long-period weak-motion inertial sensor includes a frame having a frame mounting surface, a movable mass having a movable mass mounting surface, a transducer for sensing displacements of the movable mass with respect to the frame, and a monolithic flexure element for suspending the movable mass in the frame. The monolithic flexure element includes: a stiff frame integral clamp attachable to the frame mounting surface of the frame, a stiff movable mass integral clamp attachable to the…
