Front referenced anode
Granted: May 12, 2015
Patent Number:
9028657
Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.
Carbon deposition-etch-ash gap fill process
Granted: May 5, 2015
Patent Number:
9023731
Techniques, systems, and apparatuses for performing carbon gap-fill in semiconductor wafers are provided. The techniques may include performing deposition-etching operations in a cyclic fashion to fill a gap feature with carbon. A plurality of such deposition-etching cycles may be performed, resulting in a localized build-up of carbon film on the top surface of the semiconductor wafer near the gap feature. An ashing operation may then be performed to preferentially remove the built-up…
Methods for monitoring thickness of a conductive layer
Granted: April 14, 2015
Patent Number:
9007059
Methods and apparatuses for calibrating eddy current sensors. A calibration curve is formed relating thickness of a conductive layer in a magnetic field to a value measured by the eddy current sensors or a value derived from such measurement, such as argument of impedance. The calibration curve may be an analytic function having infinite number terms, such as trigonometric, hyperbolic, and logarithmic, or a continuous plurality of functions, such as lines. High accuracy allows the…
Wafer position correction with a dual, side-by-side wafer transfer robot
Granted: April 7, 2015
Patent Number:
9002514
Methods and systems for positioning wafers using a dual side-by-side end effector robot are provided. The methods involve performing place moves using dual side-by-side end effector robots with active wafer position correction. According to various embodiments, the methods may be used for placement into a process module, loadlock or other destination by a dual wafer transfer robot. The methods provide nearly double the throughput of a single wafer transfer schemes by transferring two…
Plasma activated conformal dielectric film deposition
Granted: April 7, 2015
Patent Number:
8999859
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
Granted: March 31, 2015
Patent Number:
8993460
Disclosed herein are methods of forming SiC/SiCN film layers on surfaces of semiconductor substrates. The methods may include introducing a silicon-containing film-precursor and an organometallic ligand transfer reagent into a processing chamber, adsorbing the silicon-containing film-precursor, the organometallic ligand transfer reagent, or both onto a surface of a semiconductor substrate under conditions whereby either or both form an adsorption-limited layer, and reacting the…
Through silicon via filling using an electrolyte with a dual state inhibitor
Granted: March 31, 2015
Patent Number:
8992757
A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 ?m in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The…
Mass damper for semiconductor wafer handling end effector
Granted: March 24, 2015
Patent Number:
8985935
A calibrated mass damper for use with end effectors for semiconductor wafer handling robots is described. The calibrated mass damper reduces vibrational response in an end effector carrying a semiconductor wafer without requiring modification of the end effector structure.
Point of use valve manifold for semiconductor fabrication equipment
Granted: March 24, 2015
Patent Number:
8985152
A point-of-use valve (POU valve) manifold is provided that allows for multiple precursors to be delivered to a semiconductor processing chamber through a common outlet. The manifold may have a plurality of precursor inlets and a purge gas inlet. The manifold may be configured such that there are zero dead legs in the manifold when the purge gas is routed through the manifold, and may provide mounting location for the POU valves that alternate sides. One or more internal flow path volumes…
Multi-station sequential curing of dielectric films
Granted: March 17, 2015
Patent Number:
8980769
The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV…
Methods of improving tungsten contact resistance in small critical dimension features
Granted: March 10, 2015
Patent Number:
8975184
Methods of filling features with low-resistivity tungsten layers having good fill without use of a nucleation layer are provided. In certain embodiments, the methods involve an optional treatment process prior to chemical vapor deposition of tungsten in the presence of a high partial pressure of hydrogen. According to various embodiments, the treatment process can involve a soaking step or a plasma treatment step. The resulting tungsten layer reduces overall contact resistance in…
Electrostatic chucks and methods for refurbishing same
Granted: March 3, 2015
Patent Number:
8968503
Novel methods for extending electrostatic chuck lifetimes are provided. The methods involve providing a chuck having a metal cooling plate attached to a ceramic top plate, and after a period of use, disassembling the chuck, and providing a new chuck including the used metal cooling plate. In certain embodiments, the use of a low temperature bond material uniquely allows the described disassembly and reassembly without damage to other parts of the chuck.
Methods and apparatus for plasma-based deposition
Granted: February 24, 2015
Patent Number:
8962101
High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor partial pressures and/or low process temperatures. Also provided are ceramic wafer pedestals with multiple electrode planes embedded with…
Wetting pretreatment for enhanced damascene metal filling
Granted: February 24, 2015
Patent Number:
8962085
Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.
Dual arm vacuum robot with common drive pulley
Granted: February 24, 2015
Patent Number:
8961099
A robot for use in semiconductor vacuum chambers is disclosed. The robot may include two independently-driven arms configured for wafer handling. The robot may include three motors or drive systems and a tri-axial seal to realize independent extension/retraction of each arm and overall simultaneous rotation of the arm assembly. The robot may provide enhanced throughput efficiency over other robot designs.
Conformal doping via plasma activated atomic layer deposition and conformal film deposition
Granted: February 17, 2015
Patent Number:
8956983
Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer,…
Methods for modulating step coverage during conformal film deposition
Granted: February 17, 2015
Patent Number:
8956704
Methods for processing a substrate include a) arranging a substrate on a pedestal in a processing chamber; b) supplying precursor to the processing chamber; c) purging the processing chamber; d) performing radio frequency (RF) plasma activation; e) purging the processing chamber; and f) prior to purging the processing chamber in at least one of (c) or (e), setting a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at…
Single-chamber sequential curing of semiconductor wafers
Granted: February 10, 2015
Patent Number:
8951348
The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure.…
Flow balancing in gas distribution networks
Granted: January 6, 2015
Patent Number:
8925588
Flow distribution networks that supply process gas to two or more stations in a multi-station deposition chamber. Each flow distribution network includes an inlet and flow distribution lines for carrying process gas to the stations. The flow distribution lines include a branch point downstream from the inlet and two or more branches downstream from the branch point. Each branch supplies a station. The flow distribution network also includes highly variable flow elements in each branch.…
Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation
Granted: December 30, 2014
Patent Number:
8920162
Methods and apparatuses that decouple wafer temperature from pre-heat station residence time, thereby improving wafer-to-wafer temperature uniformity, are provided. The methods involve maintaining a desired temperature by varying the distance between the wafer and a heater. In certain embodiments, the methods involve rapidly approaching a predetermined initial distance and then obtaining and maintaining a desired final temperature using closed loop temperature control. In certain…
