CVD flowable gap fill
Granted: November 12, 2013
Patent Number:
8580697
The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances…
Method and apparatus for filling interconnect structures
Granted: November 5, 2013
Patent Number:
8575028
Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up…
Method for etching organic hardmasks
Granted: October 29, 2013
Patent Number:
8569179
A method of etching or removing an amorphous carbon organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an amorphous carbon organic hardmask to be removed, the dielectric film having a dielectric constant no greater than about 4.0, introducing over the amorphous carbon organic hardmask an ionizable gas comprising a mixture of hydrogen and an oxidizing gas, and applying energy to the mixture…
Methods for forming conductive carbon films by PECVD
Granted: October 22, 2013
Patent Number:
8563414
Conductive carbon films having a resistivity of less than about 0.2 Ohm-cm, preferably less than about 0.05 Ohm-cm, are deposited by PECVD. Conductive carbon films are essentially free of sp3-hybridized carbon and contain predominantly sp2 carbon, based on IR spectral features. Carbon content of the films is at least about 75% atomic C. Conductive carbon films may contain hydrogen, but are typically hydrogen-poor, containing less than about 20% H. In some embodiments, conductive carbon…
PECVD flowable dielectric gap fill
Granted: October 15, 2013
Patent Number:
8557712
New methods of filling gaps with dielectric material are provided. The methods involve plasma-enhanced chemical vapor deposition (PECVD) of a flowable polymerized film in a gap, followed by an in-situ treatment to convert the film to a dielectric material. According to various embodiments, the in-situ treatment may be a purely thermal or plasma treatment process. Unlike conventional PECVD processes of solid material, which deposit film in a conformal process, the deposition results in…
Method for reducing tungsten roughness and improving reflectivity
Granted: October 8, 2013
Patent Number:
8551885
Methods of producing low resistivity tungsten bulk layers having lower roughness and higher reflectivity are provided. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. The methods involve CVD deposition of tungsten in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen. According to various…
Plating method and apparatus with multiple internally irrigated chambers
Granted: September 24, 2013
Patent Number:
8540857
An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces…
Hardmask materials
Granted: September 17, 2013
Patent Number:
8536073
Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about ?600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group…
Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia
Granted: September 10, 2013
Patent Number:
8528224
Systems and methods for processing a substrate include supplying steam in a chamber, arranging a substrate with a deposited layer that includes silicon in the chamber, and directing UV light onto the deposited layer in the presence of the steam for a predetermined conversion period to at least partially convert the deposited layer. Systems and methods for densifying a deposited layer of a substrate include supplying ammonia in a chamber, arranging the substrate that includes the…
Modulated metal removal using localized wet etching
Granted: September 10, 2013
Patent Number:
8530359
An apparatus for wet etching metal from a semiconductor wafer comprises a wafer holder for rotating a wafer and a plurality of nozzles for applying separate flow patterns of etching liquid to the surface of the wafer. The flow patterns impact the wafer in distinct band-like impact zones. The flow pattern of etching liquid from at least one nozzle is modulated during a total etching time control the cumulative etching rate in one local etch region relative to the cumulative etching rate…
Plasma-activated deposition of conformal films
Granted: September 3, 2013
Patent Number:
8524612
Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the…
Purging of porogen from UV cure chamber
Granted: August 27, 2013
Patent Number:
8518210
An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into…
Apparatus and methods for monitoring health of semiconductor process systems
Granted: August 20, 2013
Patent Number:
8515568
Disclosed are apparatus and methods for monitoring an operation parameter of a process tool, independently of a process system recipe, are provided. In one embodiment, the behavior of a process device as it transitions between different states is monitored for a single cycle of operation or over time to detect trends that indicate a potential failure of the process device. When a trend that indicates a potential failure is detected, an alarm is generated. In one implementation, the time…
Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers
Granted: August 20, 2013
Patent Number:
8513124
Disclosed are methods of depositing a copper seed layer to be used for subsequent electroplating a bulk-layer of copper thereon. A copper seed layer may be deposited with different processes, including CVD, PVD, and electroplating. With electroplating methods for depositing a copper seed layer, disclosed are methods for depositing a copper alloy seed layer, methods for depositing a copper seed layer on the semi-noble metal layer with a non-corrosive electrolyte, methods of treating the…
Cascaded cure approach to fabricate highly tensile silicon nitride films
Granted: August 20, 2013
Patent Number:
8512818
A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a…
Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
Granted: August 6, 2013
Patent Number:
8501620
Top-down methods of increasing reflectivity of tungsten films to form films having high reflectivity, low resistivity and low roughness are provided. The methods involve bulk deposition of tungsten followed by a removing a top portion of the deposited tungsten. In particular embodiments, removing a top portion of the deposited tungsten involve exposing it to a fluorine-containing plasma. The methods produce low resistivity tungsten bulk layers having lower roughness and higher…
Photoresist-free metal deposition
Granted: August 6, 2013
Patent Number:
8500985
Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal…
Pulse sequence for plating on thin seed layers
Granted: August 6, 2013
Patent Number:
8500983
A plating protocol is employed to control plating of metal onto a wafer comprising a conductive seed layer. Initially, the protocol employs cathodic protection as the wafer is immersed in the plating solution. In certain embodiments, the current density of the wafer is constant during immersion. In a specific example, potentiostatic control is employed to produce a current density in the range of about 1.5 to 20 mA/cm2. The immersion step is followed by a high current pulse step. During…
Loadlock designs and methods for using same
Granted: July 23, 2013
Patent Number:
8491248
Provided are apparatuses and methods disclosed for wafer processing. Specific embodiments include dual wafer handling systems that transfer wafers from storage cassettes to processing modules and back and aspects thereof. Stacked independent loadlocks that allow venting and pumping operations to work in parallel and may be optimized for particle reduction are provided. Also provided are annular designs for radial top down flow during loadlock vent and pumpdown.
High throughput method of in transit wafer position correction in a system using multiple robots
Granted: July 16, 2013
Patent Number:
8489237
Methods correcting wafer position error are provided. The methods involve measuring wafer position error on a robot during transfer to an intermediate station. This measurement data is then used by a second robot to perform wafer pick moves from the intermediate station with corrections to center the wafer. Wafer position correction may be performed at only one location during the transfer process. Also provided are systems and apparatuses for transferring wafers using an intermediate…
