Image sensor and pixel having a polysilicon layer over the photodiode
Granted: June 8, 2006
Application Number:
20060118781
A pixel for use in CMOS or CCD image sensors is disclosed. The pixel includes a light sensitive element, such as a photodiode, formed in a semiconductor substrate. A polysilicon layer, such as a P+ doped polysilicon, is formed over the photodiode to reduce reflection of incident light and acting as a pinning layer. The reduced reflection results in greater “signal” reaching the photodiode.
Image sensor pixel having photodiode with indium pinning layer
Granted: June 8, 2006
Application Number:
20060118836
An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N? region formed within a P-type region. A pinning layer formed from indium is then formed at the surface of the N? region. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the…
Image sensor and pixel having a non-convex photodiode
Granted: April 13, 2006
Application Number:
20060076588
In a photodiode used in a pixel of an image sensor, the area of interface between an N-type region and a P-type region is increased, such as through the use of an interstitial P+-type region or an interstitial P-type region. By increasing the interface area, greater well capacity can be attained. Further, this also enhances depletion of the photodiode. By changing the shape of the N-type layer, an increase in the area of the interface between the P-type region and N-type layer can be…
Active pixel having buried transistor
Granted: December 1, 2005
Application Number:
20050263681
An active pixel for an image sensor that has minimized 1/f noise. The active pixel includes an amplification transistor that is implemented as a “body current” transistor. This minimizes the effect of surface oxide traps that are believed to cause 1/f noise. Further, the reset transistor, the row select transistor, and transfer transistor of the active pixel may also be implemented as a body current transistor to further reduce 1/f noise.
Method and apparatus for color image data processing and compression
Granted: April 21, 2005
Application Number:
20050084150
A method includes receiving color image data arranged in a non-square color image pattern, such as RGB raw data in a Bayer pattern. G-plane color image data of the non-square color image pattern is mapped to a substantially square color image pattern. Compression and decompression of the G-plane color image data of the substantially square color image pattern is performed. After decompression, the decompressed G-plane color image data is remapped into another G-plane color image pattern…
Active pixel having reduced dark current in a CMOS image sensor
Granted: May 8, 2003
Application Number:
20030085400
The active pixel includes a photodiode, a transfer gate, and a reset transistor. The photodiode is substantially covered with an overlying structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage current sources, which result in dark current. In one embodiment, the photodiode is covered by a FOX region in combination with the transfer gate.
