Supply Power Dependent Controllable Write Throughput for Memory Applications
Granted: April 10, 2014
Application Number:
20140098624
Devices and methods that allow dynamic management of throughput in a memory device based on a power supply voltage are provided. According to various embodiments, the power supply level can be monitored. Based on the result of the monitoring, an appropriate throughput can be determined. Once the appropriate throughput is determined, an appropriate control signal based on the determined throughput can be generated. The control signal can be configured to cause a bitline driver circuit in…
Output Voltage Controller, Electronic Device, and Output Voltage Control Method
Granted: April 10, 2014
Application Number:
20140097820
An output voltage controller includes a first controller which controls current supply to a inductor based on an output voltage, and a second controller which controls current supply to the inductor by controlling a period when an input end to which an input voltage is inputted, the inductor, and an output end from which the output voltage is outputted are coupled based on the input voltage.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Granted: April 3, 2014
Application Number:
20140094001
A semiconductor device includes a semiconductor chip, a connection electrode including a first land electrode electrically coupled with the semiconductor chip, and a through electrode formed on an upper surface of the first land electrode to be electrically coupled with the first land electrode using a stud bump, and a sealing resin, through which the connection electrode passes, for sealing the semiconductor chip.
METHOD, APPARATUS, AND MANUFACTURE FOR STAGGERED START FOR MEMORY MODULE
Granted: April 3, 2014
Application Number:
20140092687
A method, apparatus, and manufacture for memory device startup is provided. Flash memory devices are configured such that, upon the power supply voltage reaching a pre-determined level, each flash memory is arranged to load the random access memory with instructions for the flash memory, and then execute a first portion of the instructions for the flash memory. After executing the first portion of the instructions for the flash memory, each separate subset of the flash memories waits for…
PROCESSOR SYSTEM OPTIMIZATION
Granted: March 27, 2014
Application Number:
20140089937
In order to enable the optimization of a processor system without relying upon knowhow or manual labor, an apparatus includes: information obtainment unit for reading, from memory, trace information of the processor system and performance information corresponding to the trace information; information analysis unit for analyzing the trace information and the performance information so as to obtain a performance factor such as an idle time, a processing completion time of a task, or the…
Voltage Adjustment Circuit and Display Device Driving Circuit
Granted: March 27, 2014
Application Number:
20140085555
A voltage adjustment circuit for adjusting a voltage to be supplied to scanning lines of a display device includes a slope adjustment circuit configured to adjust a slope of a decrease in the voltage based on data that is externally input, and a clamp voltage adjustment circuit configured to adjust a voltage value at which the voltage is clamped based on the data.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
Granted: March 20, 2014
Application Number:
20140077347
The present invention provides a semiconductor device including: a semiconductor chip; a lead frame provided with a recessed portion on at least one of an upper surface or a lower surface thereof, and electrically coupled to the semiconductor chip; and a resin section that molds the semiconductor chip and the lead frame, and is provided with an opening above the recessed portion. By inserting a conductive pin (not shown) into the recessed portion through the opening, a plurality of…
Execution History Tracing Method
Granted: March 13, 2014
Application Number:
20140075249
An execution history tracing method includes tracing an execution history of a CPU upon executing, in a semiconductor device including the CPU, a program by using the CPU, for one or a tracing target, from outside the semiconductor device via software. The execution history tracing method includes recording, in a buffer, target information as trace information about an execution of the one or the tracing target, for each instruction cycle in which the target information is produced as…
Semiconductor Integrated Circuit, Operating Method of Semiconductor Integrated Circuit, and Debug System
Granted: March 13, 2014
Application Number:
20140070840
A current measurement unit measuring power supply currents each consumed in a plurality of circuit blocks of which at least one of the circuit blocks includes a processor, and outputting the measurement result as the power supply current values. A selection unit selecting at least one of the power supply current values according to selection information. A trace buffer sequentially holding the power supply current values being selected by the selection unit together with execution…
Multi-Chip Module and Method of Manufacture
Granted: March 6, 2014
Application Number:
20140061895
A multi-chip module and a method for manufacturing the multi-chip module that mitigates wire breakage. A first semiconductor chip is mounted and wirebonded to a support substrate. A spacer is coupled to the first semiconductor chip. A support material is disposed on the spacer and a second semiconductor chip is positioned on the support material. The second semiconductor chip is pressed into the support material squeezing it into a region adjacent the spacer and between the first and…
Memory Device with Charge Trap
Granted: March 6, 2014
Application Number:
20140061771
A memory cell system is provided forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, forming an intermediate layer over the charge trap layer, and forming a second insulator layer with the intermediate layer.
POWER SUPPLY DEVICE, CONTROL CIRCUIT, ELECTRONIC DEVICE AND CONTROL METHOD FOR POWER SUPPLY
Granted: February 27, 2014
Application Number:
20140055108
A power supply device that includes a switch circuit to which an input voltage is supplied, a coil coupled between the switch circuit and an output terminal from which an output voltage is outputted. A voltage adding circuit adds a slope voltage to a reference voltage. A control unit compares a feedback voltage corresponding to the output voltage and the reference voltage and switches the switch circuit at a timing corresponding to a comparison result of the feedback voltage and the…
CONTACTS FOR SEMICONDUCTOR DEVICES
Granted: February 13, 2014
Application Number:
20140042514
A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts.
Power Savings Apparatus and Method for Memory Device Using Delay Locked Loop
Granted: February 6, 2014
Application Number:
20140040587
Embodiments are directed to reduced power consumption for memory data transfer at high frequency through synchronized clock signaling. Delay locked loop (DLL) circuits are used to generate the synchronized clock signals. A DLL circuit consumes power as long as it is outputting the synchronized clock signals. A power saving apparatus and method are described wherein the DLL circuit is powered on when memory data access is active, while the DLL circuit is powered down when memory access is…
APPARATUS AND METHOD FOR A METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SOURCE SIDE PUNCH-THROUGH PROTECTION IMPLANT
Granted: February 6, 2014
Application Number:
20140038378
A metal oxide semiconductor field effect transistor (MOSFET) with source side punch-through protection implant. Specifically, the MOSFET comprises a semiconductor substrate, a gate stack formed above the semiconductor substrate, source and drain regions, and a protection implant. The semiconductor substrate comprises a first p-type doping concentration. The source and drain regions comprise an n-type doping concentration, and are formed on opposing sides of the gate stack in the…
BITLINE VOLTAGE REGULATION IN NON-VOLATILE MEMORY
Granted: February 6, 2014
Application Number:
20140036595
Systems and methods are provided to minimize write disturb conditions in an untargeted memory cell of a non-volatile memory array. Bitline driver circuits are provided to control a ramped voltage applied both to a bitline of a target memory cell and a neighboring bitline of an untargeted memory cell. Various embodiments advantageously maintain the integrity of data stored in the untargeted memory cells by applying a controlled voltage signal to a previously floating bitline of a neighbor…
SEMICONDUCTOR DEVICE AND PROGRAMMING METHOD
Granted: February 6, 2014
Application Number:
20140035170
The present invention include a semiconductor device and a method therefor, the method includes disposing a sheet-shaped resin at a side opposite to the chip mounting portion mounting semiconductor chips to be mounted on the chip mounting portion, and forming a resin sealing portion between the sheet-shaped resin and the chip mounting portion, to seal the semiconductor chips. According to an aspect of the present invention, it is possible to provide a semiconductor device and a…
Leakage Reducing Writeline Charge Protection Circuit
Granted: January 16, 2014
Application Number:
20140015138
Methods and systems of fabricating a wordline protection structure are described. As described, the wordline protection structure includes a polysilicon structure formed adjacent to a memory core region. The polysilicon structure includes first doped region positioned on a core side of the polysilicon structure and a second doped region positioned on a spine side of the polysilicon structure. An un-doped region positioned between the first and second doped regions. A conductive layer is…
SELF-ALIGNED SI RICH NITRIDE CHARGE TRAP LAYER ISOLATION FOR CHARGE TRAP FLASH MEMORY
Granted: January 2, 2014
Application Number:
20140001537
A method for fabricating a memory device with U-shaped trap layers over rounded active region corners is disclosed. In the present invention, an STI process is performed before the charge-trapping layer is formed. Immediately after the STI process, the sharp corners of the active regions are exposed, making them available for rounding. Rounding the corners improves the performance characteristics of the memory device. Subsequent to the rounding process, a bottom oxide layer, nitride…
Power-Efficient Voice Activation
Granted: December 19, 2013
Application Number:
20130339028
A voice activation system is provided. The voice activation system includes a first stage configured to output a first activation signal if at least one energy characteristic of a received audio signal satisfies at least one threshold and a second stage configured to transition from a first state to a second state in response to the first activation signal and, when in the second state, to output a second activation signal if at least a portion of a profile of the audio signal…
