Active ESD protection circuit
Granted: September 8, 2015
Patent Number:
9130562
A high-voltage gate driver circuit configured to drive a high-side power switch and a low-side power switch includes an active dv/dt triggered ESD protection circuit coupled between a protected node and a power rail node. The active dv/dt triggered ESD protection circuit includes a dv/dt circuit controlling an ESD protection transistor connected between the protected node and the power rail node. The ESD protection transistor is turned on when an ESD event occurs at the protected node to…
High voltage field balance metal oxide field effect transistor (FBM)
Granted: September 8, 2015
Patent Number:
9129822
A semiconductor power device formed in a semiconductor substrate comprising a highly doped region near a top surface of the semiconductor substrate on top of a lightly doped region supported by a heavily doped region. The semiconductor power device further comprises source trenches opened into the highly doped region filled with conductive trench filling material in electrical contact with the source region near the top surface. The semiconductor power device further comprises buried…
Method to manufacture short channel trench MOSFET
Granted: September 1, 2015
Patent Number:
9123805
Aspects of the present disclosure describe a trench MOSFET with a channel length that may be controlled by counterdoping the body-drain junction to form a straggle region adjacent to the trenches. The channel length is defined between the straggle region at the bottom and a source region at the top. Both of the straggle region and the source region are of the same conductivity type though they may be different ion species.
Charge reservoir IGBT top structure
Granted: September 1, 2015
Patent Number:
9123770
An IGBT device includes one or more trench gates disposed over a semiconductor substrate and a floating body region of the first conductivity type disposed between two neighboring trench gates and between a semiconductor substrate and a heavily doped top region of the second conductivity type. A body region of the first conductivity type disposed over the top region has a doping concentration higher than that of the floating body region of the first conductivity type. It is emphasized…
Low leakage dynamic bi-directional body-snatching (LLDBBS) scheme for high speed analog switches
Granted: August 25, 2015
Patent Number:
9118322
A bidirectional switch device includes a main pass field effect transistor (FET) connected to an input node and an output node. A body region of the first main pass transistor is tied to a voltage substantially halfway between the voltage at the input node side of the first main pass transistor and the voltage at the output node side of the transistor when the first main pass transistor is in an ON state.
Ultra-thin semiconductor device and preparation method thereof
Granted: August 25, 2015
Patent Number:
9117809
A preparation method of small and ultra-thin power semiconductor device comprising the steps of: providing a chip mounting unit with a plurality of pads with a plate arranged on top surface of each pad; flipping and attaching a semiconductor chip on the chip mounting unit, where the electrodes at the front of the chip are electrically connected to the pads; forming a plastic packaging body covering the chip mounting units and the chip, where the top surface of the plate and the back…
Fault tolerant power supply incorporating intelligent gate driver-switch circuit to provide uninterrupted power
Granted: August 11, 2015
Patent Number:
9106075
A fault tolerant power supply system includes at least one load switch configured to connect an input voltage to an output node of the load switch when the load switch is turned on and at least one power channel coupled to the load switch to receive the input voltage. The power channel is configured as a buck converter and includes at least a high-side power switch and a low-side power switch. The fault tolerant power supply system is configured to measure a current flowing through the…
Termination trench for power MOSFET applications
Granted: August 11, 2015
Patent Number:
9105494
Aspects of the present disclosure describe a termination structure for a power MOSFET device. A termination trench may be formed into a semiconductor material and may encircle an active area of the MOSFET. The termination trench may comprise a first and second portion of conductive material. The first and second portions of conductive material are electrically isolated from each other. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will…
Monolithic IGBT and diode structure for quai-resonant converters
Granted: July 28, 2015
Patent Number:
9093286
This invention discloses a semiconductor power device formed in a semiconductor substrate. The semiconductor power device further includes a channel stop region near a peripheral of the semiconductor substrate wherein the channel stop region further includes a peripheral terminal of a diode corresponding with another terminal of the diode laterally opposite from the peripheral terminal disposed on an active area of the semiconductor power device. In an embodiment of this invention, the…
Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
Granted: July 28, 2015
Patent Number:
9093521
This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells. Each of said power transistor cells has a planar Schottky diode that includes a Schottky junction barrier metal covering areas above gaps between separated body regions between two adjacent power transistor cells. The separated body regions further provide a function of adjusting a leakage current of said Schottky diode in each of said power transistor…
Semiconductor device with thick bottom metal and preparation method thereof
Granted: July 21, 2015
Patent Number:
9087828
A semiconductor device with thick bottom metal comprises a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposing from the top plastic package layer, a die paddle for the semiconductor chip to mount thereon and a plastic package body.
Normally on high voltage switch
Granted: July 14, 2015
Patent Number:
9082790
In some embodiments, a normally on high voltage switch device (“normally on switch device”) incorporates a trench gate terminal and buried doped gate region. In other embodiments, a surface gate controlled normally on high voltage switch device is formed with trench structures and incorporates a surface channel controlled by a surface gate electrode. The surface gate controlled normally on switch device may further incorporate a trench gate electrode and a buried doped gate region to…
Normally off gallium nitride field effect transistors (FET)
Granted: June 23, 2015
Patent Number:
9064945
A heterostructure field effect transistor (HFET) gallium nitride (GaN) semiconductor power device comprises a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The power device further comprises a source electrode and a drain electrode disposed on two opposite sides of a gate electrode disposed on top of the hetero-junction…
Termination design for high voltage device
Granted: June 23, 2015
Patent Number:
9064897
The present disclosure describes a termination structure for a high voltage semiconductor transistor device. The termination structure is composed of at least two termination zones and an electrical disconnection between the body layer and the edge of the device. A first zone is configured to spread the electric field within the device. A second zone is configured to smoothly bring the electric field back up to the top surface of the device. The electrical disconnection prevents the…
Junction barrier schottky (JBS) with floating islands
Granted: June 16, 2015
Patent Number:
9059147
A Schottky diode includes a Schottky barrier and a plurality of dopant regions disposed near the Schottky barrier as floating islands to function as PN junctions for preventing a leakage current generated from a reverse voltage. At least a trench opened in a semiconductor substrate with a Schottky barrier material disposed therein constitutes the Schottky barrier. The Schottky barrier material may also be disposed on sidewalls of the trench for constituting the Schottky barrier. The…
Hybrid packaged lead frame based multi-chip semiconductor device with multiple semiconductor chips and multiple interconnecting structures
Granted: June 9, 2015
Patent Number:
9054091
A hybrid packaging multi-chip semiconductor device comprises a lead frame unit, a first semiconductor chip, a second semiconductor chip, a first interconnecting structure and a second interconnecting structure, wherein the first semiconductor chip is attached on a first die paddle and the second semiconductor chip is flipped and attached on a third pin and a second die paddle, the first interconnecting structure electrically connecting a first electrode at a front surface of the first…
Dual-gate trench IGBT with buried floating P-type shield
Granted: June 2, 2015
Patent Number:
9048282
A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate;…
Semiconductor device for restraining creep-age phenomenon and fabricating method thereof
Granted: May 26, 2015
Patent Number:
9041172
The present invention relates generally to a semiconductor device and, more specifically, to optimizing the creep-age distance of the power semiconductor device and a preparation method thereof. The power semiconductor device includes a chip mounting unit with a die paddle and a plurality of leads arranged side by side located close to one side edge of the die paddle in a non-equidistant manner, a semiconductor chip attached on the die paddle, and a plastic packaging body covering the…
Semiconductor packaging method using connecting plate for internal connection
Granted: May 26, 2015
Patent Number:
9040357
A semiconductor package with connecting plate for internal connection comprise: a plurality of chips each having a plurality of contact areas on a top surface; one or more connecting plates having a plurality of electrically isolated connecting plate portions each connecting a contact area of the semiconductor chips. The method of making the semiconductor package includes the steps of connecting one or more connecting plates to a plurality of semiconductor chips, applying a molding…
Termination structure with multiple embedded potential spreading capacitive for trench MOSFET and method
Granted: May 12, 2015
Patent Number:
9029236
A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench MOSFET atop a bulk semiconductor layer (BSL) with bottom drain electrode. The BSL has a proximal bulk semiconductor wall (PBSW) supporting drain-source voltage (DSV) and separating TSMEC from trench MOSFET. The TSMEC has oxide-filled large deep trench (OFLDT) bounded by PBSW and a distal bulk semiconductor wall (DBSW). The OFLDT…
