Super-fast transient response (STR) AC/DC converter for high power density charging application
Granted: February 22, 2022
Patent Number:
11258270
A charger comprises a housing, a first multi-layer printed circuit board (PCB), a second multi-layer PCB, and a third multi-layer PCB. The first PCB comprises at least a portion of a primary side circuit. The second PCB comprises at least a portion of a secondary side circuit. The third PCB is perpendicular to the first PCB and the second PCB. An isolation coupling element is disposed on the third PCB. The isolation coupling element comprises a multi-layer PCB. The first PCB comprises a…
Silicon carbide trench semiconductor device
Granted: February 8, 2022
Patent Number:
11245016
A semiconductor apparatus has a silicon carbide substrate heavily doped with the first conductivity type and a lightly doped silicon carbide drift region of the first conductivity type over the silicon carbide substrate. A first body region in the drift region is doped with second conductivity type opposite the first. A first source region in the first body region is heavily doped with the first conductivity type. A gate trench is formed in the first source region and first body region.…
Semiconductor chip integrating high and low voltage devices
Granted: February 1, 2022
Patent Number:
11239312
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations. For example, the semiconductor chip may include a NPN bipolar transistor, PNP bipolar transistor, a diode, an N channel DMOS transistor and the like. the first doped well being configured as a base of the DMOS transistor, a P channel DMOS transistor and the like. These and other embodiments are…
Power stages and current monitor output signal (IMON) generation circuit
Granted: January 25, 2022
Patent Number:
11233454
Apparatus and associated methods relate to implementing an auto-inductance-detection architecture to reconstruct current monitor output (IMON) when a low-side switch in a power stage is on. In an illustrative example, an IMON generation circuit may include a variable resistor. A close loop control (e.g., OTA, switches, and variable resistor) may be configured to adjust a resistance value of the variable resistor automatically. The IMON generation circuit may also include a low pass…
Semiconductor package having enlarged gate pad and method of making the same
Granted: January 11, 2022
Patent Number:
11222858
A semiconductor package fabrication method comprises the steps of providing a wafer, applying a seed layer, forming a photo resist layer, plating a copper layer, removing the photo resist layer, removing the seed layer, applying a grinding process, forming metallization, and applying a singulation process. A semiconductor package comprises a silicon layer, an aluminum layer, a passivation layer, a polyimide layer, a copper layer, and metallization. In one example, an area of a contact…
Multi-port power delivery system and related control method
Granted: January 11, 2022
Patent Number:
11221658
A multi-port power delivery system includes a first universal serial bus (USB) port, a second USB port, a first power conversion unit, a second power conversion unit, a power delivery control circuit and a switch circuit. The first USB port is configured to output power delivered to a first power path. The second USB port is configured to output power delivered to a second power path. The first power conversion unit has a first output terminal coupled to the first power path. The second…
Port controller power path short detection
Granted: December 21, 2021
Patent Number:
11205894
A multi-port system and method implements fault detection using a resistor connected to each port controller where the resistors of at least two port controllers are connected together in parallel. Each port controller supplies a predetermined current to the associated resistor and senses the resistor voltage of the parallelly connected resistors to detect for a fault condition. A failure condition is indicated when the resistor voltage is outside of a given threshold window. In this…
Slope compensation for current mode control modulator
Granted: December 7, 2021
Patent Number:
11196409
A ramp signal generator generates a slope compensated ramp signal with optimal slope compensation for a current mode control modulator. In some embodiments, the ramp signal generator generates a ramp signal for the current control loop having a first ramp portion with slope compensation and a second ramp portion that matches the expected current mode signal. In some embodiments, the ramp signal generator is implemented using a switched capacitor circuit with charge scaling to generate…
Isolated coupling structure
Granted: November 9, 2021
Patent Number:
11170926
An isolation coupling structure for transmitting a feedback signal between a secondary side and a primary side of a voltage conversion device includes a first dielectric layer including a first face and a second face opposite to the first face, a first coupling coil disposed on the first face enclosing to form an inner region; a second coupling coil configured to couple with the first coupling coil. The second coupling coil includes a first coil portion and a second coil portion, where…
High surge transient voltage suppressor
Granted: October 19, 2021
Patent Number:
11152351
A bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating optimized collector-base junction realizing avalanche mode breakdown. In some embodiments, the bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating individually optimized collector-base and emitter-base junctions with the optimized junctions being spatially distributed. The optimized collector-base and emitter-base junctions both realize…
Pulse transformer
Granted: September 21, 2021
Patent Number:
11127520
A voltage converter comprises a second controller as a power switch of the secondary side of the transformer for comparing a detection voltage representing an output voltage and/or load current with a first reference voltage and generating a control signal, and a coupling element for transmitting the control signal generated by the second controller to the first controller on the primary side of the transformer enabling the first controller to generate a first pulse signal driving the…
Method of making reverse conducting insulated gate bipolar transistor
Granted: August 24, 2021
Patent Number:
11101137
A process is applied to develop a plurality of reverse conducting insulated gate bipolar transistors (RCIGBTs). The process comprises the steps of providing a wafer, applying a first grinding process, patterning a mask, applying an etching process, removing the mask, implanting N++ type dopant, applying a second grinding process forming a TAIKO ring, implanting P+ type dopant, annealing and depositing TiNiAg or TiNiVAg, removing the TAIKO ring, attaching a tape, and applying a…
Digitally programmable, fully differential error amplifier
Granted: August 24, 2021
Patent Number:
11099589
An error amplifier circuit receives first and second input signals and provides an error amplifier output signal indicative of the difference between the first and second input signals. The error amplifier circuit implements a proportional-integrator-differentiator (PID) circuit having a differential input signal path and including a proportional amplifier circuit, an integrator amplifier circuit, and a differentiator amplifier circuit. The differentiator amplifier circuit receives an AC…
Semiconductor package including low side field-effect transistors and high side field-effect transistors and method of making the same
Granted: August 17, 2021
Patent Number:
11094617
A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second low side FET, a first high side FET, a second high side FET, a first metal clip, a second metal clip, and a molding encapsulation. The semiconductor package further comprises an optional integrated circuit (IC) controller or an optional inductor. A method for fabricating a semiconductor package. The method comprises the steps of providing a lead frame; attaching a first low side FET, a second…
Integration of HVLDMOS with shared isolation region
Granted: July 20, 2021
Patent Number:
11069804
A power device, comprising, a semiconductor substrate composition having a substrate layer of a first conductivity type, one or more lateral double diffused metal oxide semiconductor (LDMOS) devices formed in the substrate layer. LDMOS structures are integrated in to the isolation region of a high voltage well. Each LDMOS is isolated from a power device substrate area by an isolator structure formed from the substrate layer. Each LDMOS comprises a continuous field plate formed at least…
Semiconductor package and method of making the same
Granted: July 20, 2021
Patent Number:
11069604
A semiconductor package has a plurality of pillars or portions of a plurality of lead strips, a plurality of semiconductor devices, one or two molding encapsulations and a plurality of electrical interconnections. The semiconductor package excludes a wire. The semiconductor package excludes a clip. A method is applied to fabricate semiconductor packages. The method includes providing a removable carrier; forming a plurality of pillars or a plurality of lead strips; attaching a plurality…
Wafer level chip scale package structure and manufacturing method thereof
Granted: July 13, 2021
Patent Number:
11062969
A wafer level chip scale package (WLCSP) structure and a manufacturing method are disclosed. The WLCSP structure comprises a semiconductor die and a stack. The stack comprises a protective tape and a molding compound. A portion of a first interface surface between the molding compound and the protective tape is curved. The manufacturing method comprises the steps of forming a semiconductor structure; attaching the semiconductor structure on a dummy wafer; performing a first dicing…
Sawtooh electric field drift region structure for planar and trench power semiconductor devices
Granted: June 15, 2021
Patent Number:
11038037
A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+ drain column extends down through the super junction structure and the P-epi to connect to the N+ substrate to make the device a bottom drain device. N+ source column and P+ gate column extend through the super junction but stop at the P-epi layer. A gate-drain avalanche clamp diode is formed from the bottom the P+ gate column…
Super-junction corner and termination structure with graded sidewalls
Granted: June 15, 2021
Patent Number:
11038022
A superjunction power semiconductor device includes a termination region with superjunction structures having higher breakdown voltage than the breakdown voltage of the active cell region. In one embodiment, the termination region includes superjunction structures having lower column charge as compared to the superjunction structures formed in the active cell region. In other embodiments, a superjunction power semiconductor device incorporating superjunction structures with slanted…
Bidirectional switch having back to back field effect transistors
Granted: June 8, 2021
Patent Number:
11031390
A bi-directional semiconductor switching device is formed by forming first and second vertical field effect transistors (FETs) formed in tandem from a semiconductor substrate. A source for the first FET is on a first side of the substrate and a source for the second FET is on a second side of the substrate opposite the first side. Gates for both the first and second. FETs are disposed in tandem in a common set of trenches formed a drift region of the semiconductor substrate that is…
