Normally off gallium nitride field effect transistors (FET)
Granted: October 8, 2019
Patent Number:
10439058
A heterostructure field effect transistor (HFET) gallium nitride (GaN) semiconductor power device comprises a hetero junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The power device further comprises a source electrode and a drain electrode disposed on two opposite sides of a gate electrode disposed on top of the hetero junction…
Semiconductor device having one or more titanium interlayers and method of making the same
Granted: October 8, 2019
Patent Number:
10438813
A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer. The first titanium interlayer is disposed between the first aluminum layer and the second aluminum layer. A process for fabricating a semiconductor device comprising the steps of: preparing a semiconductor wafer; depositing a first aluminum layer onto the semiconductor wafer; depositing a first titanium interlayer…
Power device with high aspect ratio trench contacts and submicron pitches between trenches
Granted: September 24, 2019
Patent Number:
10424654
This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The semiconductor power device further comprises a plurality of gate trenches formed at a top portion of the semiconductor substrate in the active cell area wherein each of the gate trenches is partially filled with a conductive gate material with a top portion of the trenches filled by a high density plasma (HDP) insulation layer. The…
MOSFET switch circuit for slow switching application
Granted: September 17, 2019
Patent Number:
10418899
A switch circuit includes a first MOS transistor and a second MOS transistor of a same conductivity type connected in parallel between a first terminal and a second terminal. The first and second MOS transistors have respective gate terminals coupled to the control terminal to receive a control signal to turn the switch circuit on or off where the control signal transitions from a first voltage level to a second voltage level at a slow rate of change. The first MOS transistor has a first…
Active clamp overvoltage protection for switching power device
Granted: September 10, 2019
Patent Number:
10411692
A controller for driving a power switch incorporates a protection circuit to protect the power switch from fault conditions, such as over-voltage conditions or power surge events. The protection circuit includes a fault detection circuit and a protection gate drive circuit. The fault detection circuit is configured to monitor the voltage across the power switch and to generate a fault detection indicator signal and the protection gate drive circuit is configured to generate a gate drive…
Fabrication of shielded gate trench MOSFET with increased source-metal contact
Granted: September 10, 2019
Patent Number:
10411104
Forming a semiconductor device on a semiconductor substrate having a substrate top surface includes: forming a gate trench extending from the substrate top surface into the semiconductor substrate; forming a gate electrode in the gate trench; forming a curved sidewall portion along at least a portion of a sidewall of the gate trench; forming a body region adjacent to the gate trench; forming a source region embedded in the body region, including disposing source material in a region that…
System and method for extending the maximum duty cycle of a step-down switching converter without maximum duty control
Granted: September 3, 2019
Patent Number:
10404169
The invention proposes a system and method for extending the maximum duty cycle of a step-down switching converter to nearly 100% while maintaining a constant switching frequency. The system includes a voltage mode or current mode step-down converter driven by a leading edge blanking (LEB) signal, which operates at the desired switching frequency. More particularly, the LEB signal is connected to a slope generator and/or a current sense network. In each switching cycle, the LEB signal…
Termination structure for nanotube semiconductor devices
Granted: August 27, 2019
Patent Number:
10396158
Semiconductor devices are formed using a pair of thin epitaxial layers (nanotubes) of opposite conductivity type formed on sidewalls of dielectric-filled trenches. In one embodiment, a termination structure is formed in the termination area and includes a first termination cell formed in the termination area at an interface to the active area, the termination cell being formed in a mesa of the first semiconductor layer and having a first width; and an end termination cell being formed…
Molded intelligent power module and method of making the same
Granted: August 27, 2019
Patent Number:
10396019
An intelligent power module (IPM) has a first, second, third and fourth die paddles, a first, second, third, fourth, fifth and sixth metal-oxide-semiconductor field-effect transistors (MOSFETs), a tie bar, a metal slug, a plurality of spacers, a plurality of leads and a molding encapsulation. The molding encapsulation encloses the first, second, third and fourth die paddles, the first, second, third, fourth, fifth and sixth MOSFETs, the tie bar and the plurality of spacers. A bottom…
Device structure having inter-digitated back to back MOSFETs
Granted: August 20, 2019
Patent Number:
10388781
A bi-directional switch device includes two inter-digitated back-to-back vertical metal oxide semiconductor field effect transistors (MOSFETs) formed on a substrate with their drains connected together, but otherwise isolated from each other.
Low capacitance bidirectional transient voltage suppressor
Granted: August 6, 2019
Patent Number:
10373947
A bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes and a diode triggered clamp device in some embodiment. In other embodiments, a bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes with a clamp device merged with a steering diode in each set. The TVS circuit is constructed to realize low capacitance at the protected nodes and…
Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)
Granted: July 16, 2019
Patent Number:
10354990
A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate including a low-side steering diode, a high-side steering diode integrated with a main Zener diode for suppressing a transient voltage. The low-side steering diode and the high-side steering diode integrated with the Zener diode are disposed in the semiconductor substrate and each constituting a vertical PN junction as vertical diodes in the semiconductor substrate whereby reducing a lateral area occupied…
Termination structure for gallium nitride Schottky diode including junction barriar diodes
Granted: June 25, 2019
Patent Number:
10333006
A method for forming a nitride-based Schottky diode includes forming a nitride-based epitaxial layer on a front side of a nitride-based semiconductor body; forming a first dielectric layer on the nitride-based epitaxial layer; etching the first dielectric layer and the nitride-based epitaxial layer to the nitride-based semiconductor body to define an opening for an anode electrode of the nitride-based Schottky diode and to form an array of islands of the nitride-based epitaxial layer in…
Compact source ballast trench MOSFET and method of manufacturing
Granted: June 18, 2019
Patent Number:
10325908
A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising a substrate of a first conductivity type, a body region of a second conductivity type, a gate electrode formed in a gate trench extending in the body region and substrate, a lightly doped source region and a heavily doped source region formed in the body region, and a source contact extending to the body region formed in a source contact trench next to the gate trench. The lightly doped source region…
Vertical DMOS transistor
Granted: June 11, 2019
Patent Number:
10319848
A transistor includes a semiconductor body; a first gate electrode formed on a first portion of the semiconductor body and a second gate electrode formed on a second portion of the semiconductor body. A drain region is formed on a first side of the first gate electrode and a first source region is formed on a second side of the first gate electrode. The drain region is formed on a first side of the second gate electrode and a second source region is formed on a second side of the second…
Voltage detection circuit and a method of detecting voltage changes
Granted: May 21, 2019
Patent Number:
10298144
A power conversion system and a method for voltage change detection, specifically, relates to a detection circuit implemented in the AC-DC power converter, detect the voltage change. The AC input voltage is rectified to convert into a DC input voltage transmitted to a detection unit generating a detection voltage signal at different logical states corresponding to the input voltage changes. A charge current source unit is used for charging the capacitor when the detection voltage signal…
High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and method
Granted: May 21, 2019
Patent Number:
10297594
A high density trench-gated MOSFET array and method are disclosed. It comprises semiconductor substrate partitioned into MOSFET array area and gate pickup area; epitaxial region, body region and source region; numerous precisely spaced active nitride-capped trench gate stacks (ANCTGS) embedded till the epitaxial region. Each ANCTGS comprises a stack of polysilicon trench gate with gate oxide shell and silicon nitride cap covering top of polysilicon trench gate and laterally registered to…
Converting apparatus and method thereof
Granted: May 14, 2019
Patent Number:
10289136
A converting apparatus includes: a driving device arranged to charge a connecting terminal by a charging signal and to discharge the connecting terminal by a discharging signal for generating a driving signal; a filtering device coupled to the connecting terminal for generating an output voltage according to the driving signal; and a controlling device coupled to the connecting terminal, for receiving the driving signal to generate a control signal. The driving device is arranged to…
Semiconductor device including superjunction structure formed using angled implant process
Granted: April 30, 2019
Patent Number:
10276387
A semiconductor device includes a superjunction structure formed using simultaneous N and P angled implants into the sidewall of a trench. The simultaneous N and P angled implants use different implant energies and dopants of different diffusion rate so that after annealing, alternating N and P thin semiconductor regions are formed. The alternating N and P thin semiconductor regions form a superjunction structure where a balanced space charge region is formed to enhance the breakdown…
Constant on-time (COT) control in isolated converter
Granted: April 23, 2019
Patent Number:
10270353
A constant on-time isolated converter comprising a transformer is disclosed. The transformer primary side connects to an electronic switch and secondary-side connects to a load and a processor. The processor connects to a driver on primary side through at least one coupling element and to the electronic switch. The processor receives an output voltage or an output current across the load generating a control signal. The driver receives control signal through the coupling element and…
