SELECTIVE TRENCH MODIFICATION USING DIRECTIONAL ETCH
Granted: April 25, 2024
Application Number:
20240136194
Disclosed herein are approaches for device modification, namely, trench elongation. In one approach, a method may include providing a substrate including a plurality of surface features defining a plurality of trenches, wherein a first trench has a first trench length extending in a first direction, wherein a second trench connected to the first trench has a second trench length extending in a second direction, and wherein the first direction and the second direction are non-parallel.…
METHOD FOR CREATING A SMOOTH DIAGONAL SURFACE USING A FOCUSED ION BEAM AND AN INNOVATIVE SCANNING STRATEGY
Granted: April 25, 2024
Application Number:
20240136150
A method of milling a diagonal cut in a region of a sample, the method comprising: positioning the sample in a processing chamber having a charged particle beam column; moving the region of the sample under a field of view of the charged particle column; generating a charged particle beam with the charged particle beam column and scanning the charged particle beam over the region of the sample along scan lines arranged parallel to a slope of the diagonal cut; and repeating the generating…
METHODS FOR FORMING DRAM DEVICES WITHOUT TRENCH FILL VOIDS
Granted: April 18, 2024
Application Number:
20240130117
Disclosed herein are approaches for forming dynamic DRAM devices without trench fill voids. A method may include providing a plurality of trenches in a substrate, the plurality of trenches defining a plurality of device structures, and depositing a plurality of layers over the device structures. The layers may include a first layer over the device structures, a second layer over the first layer, and a third layer over the second layer. The method may further include forming a plurality…
SACRIFICIAL SOURCE/DRAIN FOR METALLIC SOURCE/DRAIN HORIZONTAL GATE ALL AROUND ARCHITECTURE
Granted: April 18, 2024
Application Number:
20240128355
Semiconductor devices and methods of manufacturing the same are described. The method includes forming a source region and a drain region adjacent to a superlattice structure on a substrate. The source region and the drain region comprise a metallic silicide material. In some embodiments, a sacrificial material is first deposited and then removed to form a metallic silicide material in the source and drain region.
ENDPOINT OPTIMIZATION FOR SEMICONDUCTOR PROCESSES
Granted: April 18, 2024
Application Number:
20240128131
A camera may capture reflected light from the surface of the wafer during a semiconductor process that adds or removes material from the wafer, such as an etch process. To accurately determine an endpoint for the process, a camera sampling rate and light source intensity may be optimized in the process recipe. Optimizing the light source intensity may include characterizing light intensities that will be reflected from the waiver using an image of the wafer. Pixel intensities may be used…
INDUCTIVELY COUPLED PLASMA APPARATUS WITH NOVEL FARADAY SHIELD
Granted: April 18, 2024
Application Number:
20240128052
An antenna assembly, comprising: an antenna; a dielectric enclosure surrounding the antenna; and a Faraday shield, disposed around the antenna, and arranged between the antenna and the dielectric enclosure, wherein the Faraday shield comprises a non-uniform opacity along an antenna axis of the antenna, wherein a first opacity of the Faraday shield at a first position along the antenna axis is greater than a second opacity of the Faraday shield at a second position along the antenna axis…
BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM
Granted: April 11, 2024
Application Number:
20240121937
Disclosed herein are approaches for forming contacts in a 4F2 vertical dynamic random-access memory device. One method includes providing a plurality of fins extending from a substrate, forming a spacer layer over the plurality of fins, and etching the substrate to expose a base portion of the plurality of fins. The method may include forming a doped layer along the base portion of the plurality of fins and along an upper surface of the substrate, and forming an oxide spacer over the…
ISOTROPIC SILICON NITRIDE REMOVAL
Granted: April 11, 2024
Application Number:
20240120210
Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing…
CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL
Granted: April 11, 2024
Application Number:
20240120193
Exemplary methods of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. The silicon-containing material may extend into one or more recesses defined by alternating layers of material deposited on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may…
Deposition Of Piezoelectric Films
Granted: April 4, 2024
Application Number:
20240114800
A piezoelectric device comprises: a substrate (12) and a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on the substrate (12). The PMNPT film comprises: a thermal oxide layer (20) on the substrate (12); a first electrode above on the thermal oxide layer (20); a seed layer (26) above the first electrode; a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer (16) on the seed layer (26), and a second electrode on the PMNPT piezoelectric layer (16). The PMNPT…
PARTICLE ACCELERATOR HAVING NOVEL ELECTRODE CONFIGURATION FOR QUADRUPOLE FOCUSING
Granted: April 4, 2024
Application Number:
20240114613
An apparatus may include a drift tube assembly, comprising a plurality of drift tubes to conduct an ion beam along a beam propagation direction. The plurality of drift tubes may define a multi-gap configuration corresponding to a plurality of acceleration gaps, wherein the plurality of drift tubes further define a plurality of RF quadrupoles, respectively. As such, the plurality of quadrupoles are arranged to defocus the ion beam along a first direction at the plurality of acceleration…
MOLECULAR LAYER DEPOSITION CARBON MASKS FOR DIRECT SELECTIVE DEPOSITION OF SILICON-CONTAINING MATERIALS
Granted: March 28, 2024
Application Number:
20240105499
Embodiments of the present technology relate to semiconductor processing methods that include providing a structured semiconductor substrate including a trench having a bottom surface and top surfaces. The methods further include depositing a portion of a silicon-containing material on the bottom surface of the trench for at least one deposition cycle, where each deposition cycle includes: depositing the portion of the silicon-containing material on the bottom surface and top surfaces of…
ENHANCED DEPOSITION RATE BY APPLYING A NEGATIVE VOLTAGE TO A GAS INJECTION NOZZLE IN FIB SYSTEMS
Granted: March 28, 2024
Application Number:
20240105421
A method of depositing material over a localized region of a sample comprising: positioning a sample within a vacuum chamber such that the localized region is under a field of view of a charged particle beam column; injecting a deposition precursor gas, with a gas injection nozzle, into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with the charged particle beam column and focusing the charged particle beam within the deposition…
PLASMA-ENHANCED MOLYBDENUM DEPOSITION
Granted: March 28, 2024
Application Number:
20240102157
Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-K dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and a plasma at a temperature of less than or equal to 400° C. The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), molybdenum hexacarbonyl,…
NON-DESTRUCTIVE SEM-BASED DEPTH-PROFILING OF SAMPLES
Granted: March 21, 2024
Application Number:
20240094150
Disclosed herein is a computer-based method for non-destructive depth-profiling of samples. The method includes a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample, which penetrates the sample to a respective depth determined by the landing energy, and (ii) sensing electrons returned from the sample, thereby obtaining a respective sensed electrons data set. The…
LIGHT EMITTING DIODE WITH INCREASED LIGHT CONVERSION EFFICIENCY
Granted: March 21, 2024
Application Number:
20240097081
Embodiments of the present technology include pixel structures. The pixel structures include a light emitting diode structure to generate ultraviolet light. The pixel structures further include a photoluminescent region containing a photoluminescent material. The pixel structures additionally include a first bandpass filter positioned between the light emitting diode structure and the photoluminescent region, where the first bandpass filter is operable to transmit greater than 50% of…
SINGLE WAFER PROCESSING ENVIRONMENTS WITH SPATIAL SEPARATION
Granted: March 21, 2024
Application Number:
20240096688
Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process…
IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES
Granted: March 21, 2024
Application Number:
20240096641
Exemplary methods of semiconductor processing may include etching a first portion of a feature in a substrate disposed within a processing region of a semiconductor processing chamber. The first portion of the feature may at least partially extend through one or more layers of material formed on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma…
OPTIMIZED SADDLE NOZZLE DESIGN FOR GAS INJECTION SYSTEM
Granted: March 21, 2024
Application Number:
20240096592
A gas injection nozzle that includes an elongated gas conduit that comprises: a first gas conduit segment configured to be coupled with a gas reservoir; a second gas conduit segment fluidly coupled to the first gas conduit segment and defining a downward curve of the elongated gas conduit; a third gas conduit segment defining an upward curve of the elongated gas conduit that extends to a sealed end and is disposed in a mirrored relationship with at least a portion of the second gas…
NON-DESTRUCTIVE SEM-BASED DEPTH-PROFILING OF SAMPLES
Granted: March 21, 2024
Application Number:
20240096591
Disclosed herein is a system for non-destructive depth-profiling of samples. The system includes: (i) an electron beam (e-beam) source for projecting e-beams at each of a plurality of landing energies on an inspected sample; (ii) an electron sensor for obtaining a measured set of electron intensities pertaining to each of the landing energies; and (iii) processing circuitry for determining a set of structural parameters, which characterizes an internal geometry and/or a composition of…
