OPTIMIZED SADDLE NOZZLE DESIGN FOR GAS INJECTION SYSTEM
Granted: March 21, 2024
Application Number:
20240096592
A gas injection nozzle that includes an elongated gas conduit that comprises: a first gas conduit segment configured to be coupled with a gas reservoir; a second gas conduit segment fluidly coupled to the first gas conduit segment and defining a downward curve of the elongated gas conduit; a third gas conduit segment defining an upward curve of the elongated gas conduit that extends to a sealed end and is disposed in a mirrored relationship with at least a portion of the second gas…
NON-DESTRUCTIVE SEM-BASED DEPTH-PROFILING OF SAMPLES
Granted: March 21, 2024
Application Number:
20240096591
Disclosed herein is a system for non-destructive depth-profiling of samples. The system includes: (i) an electron beam (e-beam) source for projecting e-beams at each of a plurality of landing energies on an inspected sample; (ii) an electron sensor for obtaining a measured set of electron intensities pertaining to each of the landing energies; and (iii) processing circuitry for determining a set of structural parameters, which characterizes an internal geometry and/or a composition of…
NON-DESTRUCTIVE SEM-BASED DEPTH-PROFILING OF SAMPLES
Granted: March 21, 2024
Application Number:
20240094150
Disclosed herein is a computer-based method for non-destructive depth-profiling of samples. The method includes a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample, which penetrates the sample to a respective depth determined by the landing energy, and (ii) sensing electrons returned from the sample, thereby obtaining a respective sensed electrons data set. The…
SYSTEMS AND METHODS FOR DEPOSITING LOW-K DIELECTRIC FILMS
Granted: March 14, 2024
Application Number:
20240087881
Embodiments include semiconductor processing methods to form low-K films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, wherein the one or more deposition precursors include a silicon-containing precursor. The silicon-containing precursor may include a carbon chain. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may…
Shutter Disk
Granted: March 14, 2024
Application Number:
20240087913
Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.
METHODS OF HIGHLY SELECTIVE SILICON OXIDE REMOVAL
Granted: March 14, 2024
Application Number:
20240087910
A semiconductor processing method may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include an exposed region of silicon-and-oxygen-containing material. The substrate may include an exposed region of a liner material. The methods may include providing a hydrogen-containing precursor to the semiconductor processing region. The methods may include…
RADICAL TREATMENT FOR METAL GATE STACK
Granted: March 14, 2024
Application Number:
20240087899
Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. The methods include treating a surface of a metal gate stack with a radical treatment. The radical treatment may be used to treat one or more layers or surfaces of layers in the metal gate stack. The radical treatment may be performed once or multiple times during the methods described herein. The radical treatment comprises flowing one or more of nitrogen radicals (N2*) and hydrogen…
HIGH DENSITY CARBON FILMS FOR PATTERNING APPLICATIONS
Granted: March 14, 2024
Application Number:
20240087894
Embodiments of the present disclosure generally relate to deposition of high transparency, high-density carbon films for patterning applications. In one embodiment, a method of forming a carbon film on a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a process chamber having a substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a temperature of about ?10° C. to about 20° C. and a chamber pressure of about…
SYSTEM AND METHOD FOR RADICAL AND THERMAL PROCESSING OF SUBSTRATES
Granted: March 14, 2024
Application Number:
20240087889
The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of…
FLUORINE-DOPED SILICON-CONTAINING MATERIALS
Granted: March 14, 2024
Application Number:
20240087882
Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the one or more deposition precursors. The methods may include forming a silicon-containing material on the substrate. The methods may include providing a fluorine-containing precursor to the processing region of the semiconductor processing…
SYSTEMS AND METHODS FOR DEPOSITING LOW-K DIELECTRIC FILMS
Granted: March 14, 2024
Application Number:
20240087880
Embodiments include semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a…
Z-PROFILING OF WAFERS BASED ON X-RAY MEASUREMENTS
Granted: March 14, 2024
Application Number:
20240085356
A computer-based method for non-destructive z-profiling of samples. The method includes: a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample at a respective landing energy, such that light-emitting interactions between electrons from the electron beam and the sample occur within a respective probed region of the sample, which is centered about a respective…
DEPTH-PROFILING OF SAMPLES BASED ON X-RAY MEASUREMENTS
Granted: March 14, 2024
Application Number:
20240085351
Disclosed herein is a system for non-destructive depth-profiling of samples. The system includes an electron beam source, a light sensor, and processing circuitry. The electron beam source configured to project e-beams on an inspected sample at each of a plurality of landing energies, which induce X-ray emitting interactions within each of a plurality of probed regions in the inspected sample, respectively, whose depth is determined by the landing energy. The light sensor is configured…
SELECTIVE MOSI DEPOSITION
Granted: March 7, 2024
Application Number:
20240079241
Methods for forming a semiconductor structure and semiconductor structures are described. Some embodiments of the method comprise patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate is pre-cleaned. A molybdenum film is selectively deposited on the p transistor.
SiC MOSFET Including Trench with Rounded Corners
Granted: March 7, 2024
Application Number:
20240079236
Disclosed herein are approaches for forming a SiC MOSFET including at least one trench with rounded corners. In one approach, a method may include providing a masking layer over a silicon carbide (SiC) layer, wherein an opening is formed in the masking layer, and providing a sidewall spacer along a sidewall of the opening of the masking layer. The method may further include forming an implant region within the SiC layer by directing ions through the opening defined by the sidewall…
OPTICAL ABSORPTION SENSOR FOR SEMICONDUCTOR PROCESSING
Granted: March 7, 2024
Application Number:
20240079220
Semiconductor processing systems and methods are disclosed. An exemplary semiconductor processing system may include a semiconductor processing chamber containing a solid boron deposit, a remote plasma unit disposed upstream of the semiconductor processing chamber, and an optical absorption sensor disposed downstream of the semiconductor processing chamber. The remote plasma unit may be configured to generate plasma effluents from a fluorine-containing precursor. The optical absorption…
GAS DISTRIBUTION APPARATUSES FOR IMPROVING MIXING UNIFORMITY
Granted: February 29, 2024
Application Number:
20240068095
Gas distribution apparatuses described herein include a mixing plate adjacent a back plate of a showerhead. The mixing plate has a back surface and a front surface defining a thickness of the mixing plate. The mixing plate has a mixing channel comprising a top portion and a bottom portion defining a mixing channel length and at least two gas inlets in fluid communication with the top portion of the mixing channel. The gas distribution apparatus also includes a mixer disposed within the…
ADHESION IMPROVEMENT BETWEEN LOW-K MATERIALS AND CAP LAYERS
Granted: February 29, 2024
Application Number:
20240071817
Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A semiconductor substrate may be positioned within the processing region. The methods may include forming a layer of low dielectric constant material on the semiconductor substrate. The methods may include purging the processing region of the one or more deposition precursors. A plasma power may be maintained at less than or…
ION IMPLANTATION FOR INCREASED ADHESION WITH RESIST MATERIAL
Granted: February 29, 2024
Application Number:
20240071773
Exemplary methods of semiconductor processing may include forming a layer of silicon-containing material on a semiconductor substrate. The methods may include performing a post-formation treatment on the layer of silicon-containing material to yield a treated layer of silicon-containing material. The methods may include contacting the treated layer of silicon-containing material with an adhesion agent. The methods may include forming a layer of a resist material on the treated layer of…
OPTICAL AUTO-FOCUS UNIT AND A METHOD FOR AUTO-FOCUS
Granted: February 29, 2024
Application Number:
20240071715
A charged particle evaluation system that may include a column that includes an opening; an illumination unit that is configured to scan an area of a sample with an electron beam that passes through the opening; and an optical auto-focus unit that is configured to (i) illuminate the sample with an optical beam that is proximate to the electron beam, during the scan of the area with the electron beam; (ii) receive a reflected optical beam from the sample, (iii) determine a focus status of…
