NANOCRYSTALLINE DIAMOND WITH AMORPHOUS INTERFACIAL LAYER
Granted: October 24, 2024
Application Number:
20240352621
Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on…
DITHERING OR DYNAMIC OFFSETS FOR IMPROVED UNIFORMITY
Granted: October 24, 2024
Application Number:
20240352586
Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process…
SIDE PUMPING CHAMBER AND DOWNSTREAM RESIDUE MANAGEMENT HARDWARE
Granted: October 24, 2024
Application Number:
20240352580
Exemplary semiconductor processing chambers may include a chamber body having sidewalls and a base. The chambers may include a pumping liner seated atop the chamber body. The pumping liner may at least partially define an annular pumping plenum and at least one exhaust aperture that fluidly couples the pumping plenum with an interior of the chamber body. The chambers may include a purge ring seated below the pumping liner. The purge ring may define an annular channel that extends about a…
PLASMA BASED FILM MODIFICATION FOR SEMICONDUCTOR DEVICES
Granted: October 24, 2024
Application Number:
20240352575
Disclosed herein are approaches for treating a film layer of a semiconductor device to modify an etch resistance of the film later. In one approach, a method may include forming a first film over a substrate base, depositing a second film over the first film, and introducing an inert species into the second film while the second film is deposited over the first film, wherein the inert species increases an etch-resistance of a first portion of the first film. The method may further…
SYSTEM TO COLLECT, RECOVER AND RECYCLE CHEMICAL EXHAUST FROM SEMICONDUCTOR PROCESSING CHAMBERS
Granted: October 24, 2024
Application Number:
20240350962
Chemical precursor recovery systems and methods of recovering and reusing semiconductor manufacturing chemistry are disclosed. The recovery systems include a cold trap inlet line in fluid communication with a plurality of cold traps and a cold trap outlet line. The plurality of cold traps is configured to condense the chemical precursors and are arranged based on semiconductor manufacturing process conditions.
REDUCED STRAIN HETEROEPITAXY ASSEMBLY FOR THREE-DIMENSIONAL DEVICE AND METHOD OF FABRICATION THEREFOR
Granted: October 17, 2024
Application Number:
20240347602
A three-dimensional semiconductor (3D) device. The 3D device may include a substrate, and a monocrystalline layer stack. The monocrystalline layer stack may include at least one monocrystalline semiconductor layer, separated from, and disposed over a main surface of the substrate. The 3D device may further include a plurality of epitaxial heterostructures, integrally grown from the at least one monocrystalline semiconductor layer. As such, a first epitaxial heterostructure may be…
COATING COMPONENTS FOR SEMICONDUCTOR PROCESSING WITH FLUORINE-CONTAINING MATERIALS
Granted: October 17, 2024
Application Number:
20240347336
Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The one or more deposition precursors may include a metal-containing precursor and a fluorine-containing precursor. The methods may include depositing a layer of material on the component for semiconductor processing in the processing region. The layer of…
PROCESS CHAMBER VACUUM SEAL LEAKAGE REDUCTION
Granted: October 17, 2024
Application Number:
20240344608
Sealing bodies comprising a first body having a top surface and a bottom surface defining a thickness thereof. An inlet conduit and an outlet conduit are in fluid communication with one or more of the top surface, the bottom surface, or a top channel formed in the top surface or a bottom channel formed in the bottom surface.
Molybdenum (0) Precursors For Deposition Of Molybdenum Films
Granted: October 17, 2024
Application Number:
20240343748
Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
4F2 VERTICAL ACCESS TRANSISTOR WITH REDUCED FLOATING BODY EFFECT
Granted: October 10, 2024
Application Number:
20240341082
The present technology includes vertical cell dynamic random-access memory (DRAM) array access transistors with improved hole distribution. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect…
METHOD OF FORMING A METAL LINER FOR INTERCONNECT STRUCTURES
Granted: October 10, 2024
Application Number:
20240339358
Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM has a general formula I to XIX, wherein R, R?, R1, R2, R3, R4, and R5 are independently selected from hydrogen (H), alkyl, alkene, alkyne, and aryl, n is from 1 to 20, m is from 1 to 20, x is from 1 to…
AUTOMATIC CONTROL OF SUBSTRATES
Granted: October 10, 2024
Application Number:
20240339341
The present technology includes methods and systems for improving substrate processing. Methods and systems include disposing a substrate on a pedestal that includes a plurality of heating zones each with an independent heater, processing the substrate according to an initial substrate processing recipe that includes an initial pedestal temperature, collecting initial substrate feedback of one or more substrate properties and providing the data as a first input to a substrate control…
FLOW FOR HIGH RESOLUTION STEREOSCOPIC MEASUREMENTS
Granted: October 10, 2024
Application Number:
20240339289
A method of determining a depth of a hole milled into a first region of a sample, comprising: positioning the sample in a processing chamber having a charged particle beam column; milling a hole in the first region of the sample using a charged particle beam generated by the charged particle beam column; identifying a first registration mark at an upper level of the milled hole; identifying a second registration mark at a lower level of the milled hole; taking a first set of images at a…
HYBRID APPARATUS, SYSTEM AND TECHNIQUES FOR MASS ANALYZED ION BEAM
Granted: October 10, 2024
Application Number:
20240339288
An apparatus, including an electrodynamic mass analysis (EDMA) assembly. The EDMA assembly may include a first upper electrode, disposed above a beam axis; and a first lower electrode, disposed below the beam axis, opposite the first upper electrode, the EDMA assembly arranged to receive a first RF voltage signal at a first frequency. The apparatus may include a deflection assembly, disposed downstream to the EDMA assembly, the deflection assembly comprising a blocker, disposed along the…
APPARATUS, SYSTEM AND TECHNIQUES FOR MASS ANALYZED ION BEAM
Granted: October 10, 2024
Application Number:
20240339287
An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam…
HIGH TEMPERATURE METAL SEALS FOR VACUUM SEGREGATION
Granted: October 10, 2024
Application Number:
20240337318
Embodiments of the present disclosure are related to directed to a pressure seal for a process chamber. The pressure seal comprises a bottom portion, a compressible middle portion on the bottom portion, and a top portion on the compressible middle portion. The disclosed pressure seal is configured to reduce pumping time of a process region in an interior volume of a processing chamber compared to a process chamber that does not include a pressure seal. Processing chambers including the…
PLATING SEAL WITH IMPROVED SURFACE
Granted: October 10, 2024
Application Number:
20240337040
The present technology includes monolithic electroplating seals, such as electroplating seals formed utilizing additive manufacturing. Seals include an external seal member and an internal seal member. The external seal member includes an inner annular radius, an outer annular radius, and an external seal member body defined between an exterior surface and an interior surface opposite the exterior surface. The exterior surface is formed from at least one polymer layer having a porosity…
ATOMIC LAYER DEPOSITION OF SILICON-CARBON-AND-NITROGEN-CONTAINING MATERIALS
Granted: October 3, 2024
Application Number:
20240332001
Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The substrate may define a feature. The methods may include contacting the substrate with the first precursor. The contacting may form a first portion of a silicon-carbon-and-nitrogen-containing material on the substrate. The methods may include providing a second…
METHODS TO IMPROVE QUALITY SILICON-CONTAINING MATERIALS
Granted: October 3, 2024
Application Number:
20240332006
Exemplary methods of forming a silicon-and-carbon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor to the processing region. The methods may include generating plasma effluents of the silicon-containing precursor and plasma effluents of the…
RF PULSING ASSISTED TUNGSTEN-CONTAINING FILM DEPOSITION
Granted: October 3, 2024
Application Number:
20240332003
Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber, the deposition precursors may be or include a tungsten-containing precursor. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the one or more deposition precursors in the processing region. The plasma may be at least partially formed by…
