APPARATUS AND METHODS FOR SUSCEPTOR DEPOSITION MATERIAL REMOVAL
Granted: February 1, 2024
Application Number:
20240033877
Apparatus and method for removing material from the susceptor of a batch processing chamber are described. The apparatus comprises a polishing tool including a rotatable platen positioned above the susceptor. A method comprises contacting material deposited on the susceptor with the rotatable platen to remove the material from the susceptor.
TECHNIQUES AND DEVICE STRUCTURE BASED UPON DIRECTIONAL SEEDING AND SELECTIVE DEPOSITION
Granted: February 1, 2024
Application Number:
20240040808
In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is…
METAL CAP FOR CONTACT RESISTANCE REDUCTION
Granted: February 1, 2024
Application Number:
20240038859
A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the…
CARBON MOLD FOR DRAM CAPACITOR
Granted: February 1, 2024
Application Number:
20240038833
Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2),…
PROCESSING METHODS AND CLUSTER TOOLS FOR FORMING SEMICONDUCTOR DEVICES
Granted: February 1, 2024
Application Number:
20240038553
Semiconductor devices (e.g., GAA device structures) and processing methods and cluster tools for forming GAA device structures are described. The cluster tools for forming GAA device structures comprise a first etch chamber, a second etch chamber, and a third etch chamber. Each of the first etch chamber and the second etch chamber independently comprises a single-wafer chamber or an immersion chamber. One or more of the first etch chamber or the second etch chamber may be a wet etch…
TIME DELAY INTEGRATION ACQUISITION FOR SPATIAL GENOMICS IMAGING
Granted: February 1, 2024
Application Number:
20240035967
An imaging system for capturing spatial-omic images of biological tissue samples may include an imaging chamber configured to secure a biological tissue sample placed in the imaging system; a Time Delay and Integration (TDI) imager comprising at least one scan line; a light source configured to illuminate an area on the biological tissue sample that is being captured by the TDI imager; and a controller configured to cause the TDI imager to scan the biological tissue sample using one or…
METHODS FOR DEPOSITING MOLYBDENUM SULFIDE
Granted: February 1, 2024
Application Number:
20240035152
Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.
METHODS OF SELECTIVE DEPOSITION OF MOLYBDENUM
Granted: February 1, 2024
Application Number:
20240035151
Methods for selective deposition are described herein. The methods include depositing an oxide on a first portion of a substrate surface selected from the group consisting of a metal surface, a metal nitride surface and a metal silicide surface. The methods further comprise selectively depositing a molybdenum film on a second portion of the substrate surface that does not have the oxide deposited thereon.
BOTTOM UP MOLYBDENUM GAPFILL
Granted: February 1, 2024
Application Number:
20240035149
Embodiments of the disclosure relate to methods for molybdenum gapfill. Additional embodiments provide a method of forming a molybdenum gapfill without substantial voids. Some embodiments of the disclosure are relevant for higher aspect ratio features including DRAM memory cells.
MINIMIZING SUBSTRATE BOW DURING POLISHING
Granted: February 1, 2024
Application Number:
20240033878
Exemplary polishing methods for chemical mechanical polishing may include engaging a substrate with a membrane of a substrate carrier. The methods may include chucking the substrate against a substantially planar surface defined by the substrate carrier. The chucking may reduce a bow in the substrate. The methods may include polishing one or more materials on the substrate for a first period of time. The methods may include disengaging the substrate from the substantially planar surface.…
TECHNIQUES AND DEVICE STRUCTURE BASED UPON DIRECTIONAL SEEDING AND SELECTIVE DEPOSITION
Granted: February 1, 2024
Application Number:
20240040808
In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is…
METAL CAP FOR CONTACT RESISTANCE REDUCTION
Granted: February 1, 2024
Application Number:
20240038859
A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the…
CARBON MOLD FOR DRAM CAPACITOR
Granted: February 1, 2024
Application Number:
20240038833
Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2),…
PROCESSING METHODS AND CLUSTER TOOLS FOR FORMING SEMICONDUCTOR DEVICES
Granted: February 1, 2024
Application Number:
20240038553
Semiconductor devices (e.g., GAA device structures) and processing methods and cluster tools for forming GAA device structures are described. The cluster tools for forming GAA device structures comprise a first etch chamber, a second etch chamber, and a third etch chamber. Each of the first etch chamber and the second etch chamber independently comprises a single-wafer chamber or an immersion chamber. One or more of the first etch chamber or the second etch chamber may be a wet etch…
TIME DELAY INTEGRATION ACQUISITION FOR SPATIAL GENOMICS IMAGING
Granted: February 1, 2024
Application Number:
20240035967
An imaging system for capturing spatial-omic images of biological tissue samples may include an imaging chamber configured to secure a biological tissue sample placed in the imaging system; a Time Delay and Integration (TDI) imager comprising at least one scan line; a light source configured to illuminate an area on the biological tissue sample that is being captured by the TDI imager; and a controller configured to cause the TDI imager to scan the biological tissue sample using one or…
METHODS OF SELECTIVE DEPOSITION OF MOLYBDENUM
Granted: February 1, 2024
Application Number:
20240035151
Methods for selective deposition are described herein. The methods include depositing an oxide on a first portion of a substrate surface selected from the group consisting of a metal surface, a metal nitride surface and a metal silicide surface. The methods further comprise selectively depositing a molybdenum film on a second portion of the substrate surface that does not have the oxide deposited thereon.
BOTTOM UP MOLYBDENUM GAPFILL
Granted: February 1, 2024
Application Number:
20240035149
Embodiments of the disclosure relate to methods for molybdenum gapfill. Additional embodiments provide a method of forming a molybdenum gapfill without substantial voids. Some embodiments of the disclosure are relevant for higher aspect ratio features including DRAM memory cells.
MINIMIZING SUBSTRATE BOW DURING POLISHING
Granted: February 1, 2024
Application Number:
20240033878
Exemplary polishing methods for chemical mechanical polishing may include engaging a substrate with a membrane of a substrate carrier. The methods may include chucking the substrate against a substantially planar surface defined by the substrate carrier. The chucking may reduce a bow in the substrate. The methods may include polishing one or more materials on the substrate for a first period of time. The methods may include disengaging the substrate from the substantially planar surface.…
APPARATUS AND METHODS FOR SUSCEPTOR DEPOSITION MATERIAL REMOVAL
Granted: February 1, 2024
Application Number:
20240033877
Apparatus and method for removing material from the susceptor of a batch processing chamber are described. The apparatus comprises a polishing tool including a rotatable platen positioned above the susceptor. A method comprises contacting material deposited on the susceptor with the rotatable platen to remove the material from the susceptor.
METHOD OF DEPOSITING SILICON BASED DIELECTRIC FILM
Granted: January 25, 2024
Application Number:
20240026527
A method of forming a high aspect ratio structure within a 3D NAND structure is provided. The method includes delivering a precursor to a high aspect ratio opening disposed within a multilayer stack having two or more alternating layers. The precursor is selected from the group consisting of a diaminosilane, an aminosilane, and a combination thereof. The method includes delivering an oxygen-containing compound to the high aspect ratio opening. The precursor and the oxygen-containing…
