FAN-OUT INTERCONNECT INTEGRATION PROCESSES AND STRUCTURES
Granted: November 2, 2023
Application Number:
20230352402
Processing methods may be performed to form a fan-out interconnect structure. The methods may include forming a semiconductor active device structure overlying a first substrate. The semiconductor active device structure may include first conductive contacts. The methods may include forming an interconnect structure overlying a second substrate. The interconnect structure may include second conductive contacts. The methods may also include joining the first substrate with the second…
HIGH-DENSITY MICRO-LED ARRAYS WITH REFLECTIVE SIDEWALLS
Granted: October 26, 2023
Application Number:
20230343904
Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using…
GASBOX FOR SEMICONDUCTOR PROCESSING CHAMBER
Granted: October 26, 2023
Application Number:
20230343608
Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox…
METHOD OF USING DUAL FREQUENCY RF POWER IN A PROCESS CHAMBER
Granted: October 26, 2023
Application Number:
20230343586
Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber…
SEMICONDUCTOR PROCESSING CHAMBERS AND METHODS FOR DEPOSITION AND ETCH
Granted: October 26, 2023
Application Number:
20230343552
Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on…
REDUCED CHARGING BY LOW NEGATIVE VOLTAGE IN FIB SYSTEMS
Granted: October 26, 2023
Application Number:
20230343545
A method of processing a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an ion beam with a focused ion beam (FIB) column; focusing the ion beam on the sample and scanning the focused ion beam across the region of the sample thereby generating secondary electrons that are ejected from a surface of the sample within the region; and during the scanning, applying a negative bias voltage to an electrically conductive structure proximate the…
BAYESIAN DECOMPOSITION FOR MISMATCHED PERFORMANCES IN SEMICONDUCTOR EQUIPMENT
Granted: October 26, 2023
Application Number:
20230341841
Bayesian inference and modeling techniques, along with model decomposition may be used to improve mismatch performances in semiconductor processing devices by identifying sources of intrinsic and extrinsic variations in performance. A network of causal relationships between processes and hardware in a semiconductor processing device may be accessed to generate a first Bayesian model for a first semiconductor processing device using the causal relationships in the network and performance…
HIGH THROUGHPUT DEFECT DETECTION
Granted: October 26, 2023
Application Number:
20230341334
A method for high throughput defect detection, the method may include (i) performing, using first detection channels, a simultaneous inspection process through a segmented pupil plane that comprises multiple pupil plane segments to select one or more pupil plane segments of interest out of multiple pupil plane segments; (ii) configuring one or more configurable filters related to second detection channels to pass radiation received from the one or more pupil plane segment of interest and…
Gapfill Process Using Pulsed High-Frequency Radio-Frequency (HFRF) Plasma
Granted: October 26, 2023
Application Number:
20230340661
Methods for forming a metal carbide liner in features formed in a substrate surface are described. Each of the features extends a distance into the substrate from the substrate surface and have a bottom and at least one sidewall. The methods include depositing a metal carbide liner in the feature of the substrate surface with a plurality of high-frequency ratio-frequency (HFRF) pulses. Semiconductor devices with the metal carbide liner and methods for filling gaps using the metal carbide…
MICRO-LED STRUCTURES AND PHOTOLUMINESCENT MATERIALS HAVING UV LIGHT FILTERS
Granted: October 19, 2023
Application Number:
20230335693
Exemplary device structures may include a light emitting diode structure. The light emitting diode structure may be operable to generate light. The structures may include a photoluminescent region containing a photoluminescent material. The photoluminescent region may be positioned on the light emitting diode structure. The structures may include an ultraviolet (UV) light filter positioned above the photoluminescent region. The UV light filter may be operable to absorb light generated by…
THERMAL PROCESS CHAMBER LID WITH BACKSIDE PUMPING
Granted: October 19, 2023
Application Number:
20230335434
Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.
Area Selective Carbon-Based Film Deposition
Granted: October 19, 2023
Application Number:
20230335391
Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial…
SCANNED ANGLED ETCHING APPARATUS AND TECHNIQUES PROVIDING SEPARATE CO-LINEAR RADICALS AND IONS
Granted: October 19, 2023
Application Number:
20230335375
A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory…
3D METROLOGY FROM 3D DATACUBE CREATED FROM STACK OF REGISTERED IMAGES OBTAINED DURING DELAYERING OF THE SAMPLE
Granted: October 19, 2023
Application Number:
20230335370
A method of evaluating a region of interest of a sample including: positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB) column; acquiring a plurality of two-dimensional images of the region of interest by alternating a sequence of delayering the region of interest with a charged particle beam from the FIB column and imaging a surface of the region of interest with the SEM column;…
ADAPTIVE SETTLING TIME CONTROL FOR BINARY-WEIGHTED CHARGE REDISTRIBUTION CIRCUITS
Granted: October 19, 2023
Application Number:
20230334118
A method and circuit for performing vector operations may include, for each sequentially performed operation, operating a switch that corresponds to a current bit-order. Operating the switch may cause a value corresponding to an output of the operation to be stored on a capacitor corresponding to the current bit-order. A time interval during which the switch is operated may be non-uniform with respect to time intervals for other switches, and the time interval may be based at least in…
POROUS CHEMICAL MECHANICAL POLISHING PADS
Granted: October 19, 2023
Application Number:
20230330805
Implementations disclosed herein generally relate to polishing articles and methods for manufacturing polishing articles used in polishing processes. More specifically, implementations disclosed herein relate to porous polishing pads produced by processes that yield improved polishing pad properties and performance, including tunable performance. Additive manufacturing processes, such as three-dimensional printing processes provides the ability to make porous polishing pads with unique…
INTEGRATED CLEANING AND SELECTIVE MOLYBDENUM DEPOSITION PROCESSES
Granted: October 12, 2023
Application Number:
20230323543
Embodiments of the disclosure advantageously provide in situ selectively deposited molybdenum films having reduced resistivity and methods of reducing or eliminating lateral growth of a selectively deposited molybdenum layer. Additional embodiments provide integrated clean and deposition processes which improve the selectivity of in situ selectively deposited molybdenum films on features, such as a via. Further embodiments advantageously provide methods of improving uniformity and…
FIELD SUPPRESSED METAL GAPFILL
Granted: October 12, 2023
Application Number:
20230326744
Embodiments of the disclosure relate to methods for bottom-up metal gapfill without substantial deposition outside of the feature. Additional embodiments provide a method of forming a metal material on the top surface of the substrate and the bottom of the feature before depositing the metal gapfill. The disclosed methods
HYBRID SCANNING ELECTRON MICROSCOPY AND ACOUSTO-OPTIC BASED METROLOGY
Granted: October 12, 2023
Application Number:
20230326713
Disclosed herein is a method for non-destructive hybrid acousto-optic and scanning electron microscopy-based metrology. The method includes: (i) obtaining acousto-optic and scanning electron microscopy measurement data of an inspected structure on a sample; (ii) processing the measurement data to extract values of key measurement parameters corresponding to the acousto-optic measurement data and the scanning electron microscopy measurement data, respectively; and (iii) obtaining…
COMPOSITE ION SOURCE BASED UPON HETEROGENEOUS METAL-METAL FLUORIDE SYSTEM
Granted: October 12, 2023
Application Number:
20230326703
An ion source is provided. The ion source may include an ion chamber to generate an ion beam comprising a metal ion species; and a charge source, coupled to deliver a metal vapor to the ion chamber, the charge source including a charge mixture. The charge mixture may include a first portion, comprising an elemental metal; and a second portion, comprising a heterogeneous metal fluoride compound.
