Etch Rate Modulation of FinFET Through High-Temperature Ion Implantation
Granted: November 16, 2023
Application Number:
20230369050
A method of forming a semiconductor device may include forming a plurality of fins extending from a buried oxide layer, wherein a masking layer is disposed atop each of the plurality of fins, and performing a high-temperature ion implant to the semiconductor device. The method may further include performing an etch process to remove the masking layer from atop each of the plurality of fins, wherein the etch process does not remove the buried oxide layer.
INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRIDE DEPOSITION
Granted: November 16, 2023
Application Number:
20230369031
Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying…
RECOMBINATION CHANNELS FOR ANGLE CONTROL OF NEUTRAL REACTIVE SPECIES
Granted: November 16, 2023
Application Number:
20230369022
Provided herein are approaches for angle control of neutral reactive species ion beams. In one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. The extraction plate may include a recombination array having a plurality of channels operable to direct one or more radical beams to a workpiece at a non-zero angle relative to a…
DOSE MAPPING AND SUBSTRATE ROTATION FOR SUBSTRATE CURVATURE CONTROL WITH IMPROVED RESOLUTION
Granted: November 16, 2023
Application Number:
20230369014
A method may include generating a residual curvature map for a substrate, the residual curvature map being based upon a measurement of the substrate. The method may include generating a dose map based upon the residual curvature map, the dose map being for processing the substrate using a patterning energy source. The method may include applying the dose map to process the substrate using the patterning energy source, wherein the dose map is applied by performing a plurality of exposures…
ANGLE CONTROL FOR NEUTRAL REACTIVE SPECIES GENERATED IN A PLASMA
Granted: November 16, 2023
Application Number:
20230369013
Provided herein are approaches for angle control of neutral reactive species ion beams. In one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. The extraction plate may include a plurality of channels for delivering one or more radical beams to a workpiece, wherein each of the plurality of channels has a lengthwise axis…
DOSE MAPPING USING SUBSTRATE CURVATURE TO COMPENSATE FOR OUT-OF-PLANE DISTORTION
Granted: November 16, 2023
Application Number:
20230367941
A method may include generating a residual curvature map for a substrate, the residual curvature map being based upon a measurement of a surface of the substrate. The method may include generating a dose map based upon the residual curvature map, the dose map being for processing the substrate using a patterning energy source; and applying the dose map to process the substrate using the patterning energy source.
METHODS FOR CONTROLLING PULSE SHAPE IN ALD PROCESSES
Granted: November 16, 2023
Application Number:
20230366088
Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface. The methods include using a variable flow valve creating predetermined pulse shape when a reactant is provided on a substrate surface.
WAFER FILM FRAME CARRIER
Granted: November 9, 2023
Application Number:
20230360940
Exemplary semiconductor substrate carrier frames may include a frame body defining a central aperture. The frames may include a plurality of fingers that are coupled with the frame body. Each of the plurality of fingers may extend into the central aperture. Each of the plurality of fingers may include a substrate receiving interface. At least one of the plurality of fingers may include an actuator that manipulates a respective one of the at least one of the plurality of fingers between a…
DRY TREATMENT FOR SURFACE LOSS REMOVAL IN MICRO-LED STRUCTURES
Granted: November 9, 2023
Application Number:
20230361242
A mesa etch may form the geometry of microLED structures. However, the mesa etch may induce defects in the microLED structures that decreases the efficiency of the microLEDs. To correct these defects, a dry etch process may be performed that incrementally removes the surface layers of the microLED structures with the defects. The dry etch may be configured to incrementally remove a small outer layer, and thus may preserve the overall shape of the microLED structures while leaving a…
CONFORMAL METAL DICHALCOGENIDES
Granted: November 9, 2023
Application Number:
20230360967
Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.
LOW TEMPERATURE CARBON GAPFILL
Granted: November 9, 2023
Application Number:
20230360924
Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing…
SILICON-AND-CARBON-CONTAINING MATERIALS WITH LOW DIELECTRIC CONSTANTS
Granted: November 9, 2023
Application Number:
20230360906
Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing an oxygen-containing precursor to the processing…
LARGE AREA GAPFILL USING VOLUMETRIC EXPANSION
Granted: November 9, 2023
Application Number:
20230360903
Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more features along…
ALD CYCLE TIME REDUCTION USING PROCESS CHAMBER LID WITH TUNABLE PUMPING
Granted: November 9, 2023
Application Number:
20230357927
Process chamber lids having a pumping liner with a showerhead and gas funnel within an open central region are described. The showerhead is spaced a distance from the gas funnel to form a gap and the gas funnel has an opening to provide a flow of gas into the gap. The gas funnel includes a plurality of apertures extending from the front surface to a common region adjacent the back surface of the gas funnel. A purge ring is in contact with the back surface of the gas funnel and aligned so…
POLISHING HEAD WITH LOCAL INNER RING DOWNFORCE CONTROL
Granted: November 9, 2023
Application Number:
20230356355
Exemplary carrier heads for a chemical mechanical polishing apparatus may include a carrier body. The carrier heads may include a substrate mounting surface coupled with the carrier body. The carrier heads may include an inner ring that is sized and shaped to circumferentially surround a peripheral edge of a substrate positioned against the substrate mounting surface. The inner ring may be characterized by a first surface that faces the carrier body and a second surface opposite the…
COMPLIANT INNER RING FOR A CHEMICAL MECHANICAL POLISHING SYSTEM
Granted: November 9, 2023
Application Number:
20230356354
Exemplary carrier heads for a chemical mechanical polishing apparatus may include a carrier body. The carrier heads may include a substrate mounting surface coupled with the carrier body. The carrier heads may include an inner ring that is sized and shaped to circumferentially surround a peripheral edge of a substrate positioned against the substrate mounting surface. The inner ring may be characterized by a first end having a first surface that faces the carrier body and a second end…
PHOTOLUMINESCENT MATERIALS WITH PHOSPHOROUS ADDITIVES TO REDUCE PHOTODEGRADATION
Granted: November 2, 2023
Application Number:
20230348778
Multilayered semiconductor particles, which may be referred to as a quantum dots, may include a zinc-containing core. The particles may include a zinc-and-selenium-containing inner shell on the zinc-containing core. The particles may include a zinc-containing outer shell on the zinc-and-selenium-containing inner shell. The particles may include a phosphorous-containing material in contact with the zinc-containing outer shell. The phosphorous-containing material may be or include…
SYSTEMS AND METHODS FOR ANALYZING DEFECTS IN CVD FILMS
Granted: November 2, 2023
Application Number:
20230352349
Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a…
Creating Ion Energy Distribution Functions (IEDF)
Granted: November 2, 2023
Application Number:
20230352264
Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a negative jump voltage to an electrode of a process chamber to set a wafer voltage for a wafer, modulating an amplitude of the wafer voltage to produce a train of groups of pulse bursts with different amplitudes, and repeating the modulating of the amplitude of the wafer voltage to repeat the train of the groups of pulse bursts to…
PLATING SYSTEMS HAVING REDUCED AIR ENTRAINMENT
Granted: November 2, 2023
Application Number:
20230349064
Electroplating processing systems according to the present technology may include a recirculating tank containing a first volume of processing fluid. The recirculating tank may be fluidly coupled with a delivery pump. The systems may include a vessel configured to receive the processing fluid from the pump. The vessel may include an inner chamber and an outer chamber, and the inner chamber may be sized to hold a second volume of processing fluid less than the first volume of processing…
