Wafer dicing using femtosecond-based laser and plasma etch
Granted: October 29, 2024
Patent Number:
12131952
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the…
Techniques for void-free material depositions
Granted: October 29, 2024
Patent Number:
12131948
Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such…
Semiconductor substrate support leveling apparatus
Granted: October 29, 2024
Patent Number:
12131934
Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the…
Determination of a simulated image of a specimen
Granted: October 29, 2024
Patent Number:
12131458
There is provided a system to examine a semiconductor specimen, the system comprising a processor and memory circuitry configured to obtain a training sample comprising an image of a semiconductor specimen and a design image based on design data, train a machine learning module, wherein the training includes minimizing a function representative of a difference between a simulated image generated by the machine learning module based on a given design image, and a corrected image…
Integrated epitaxy and preclean system
Granted: October 22, 2024
Patent Number:
12125698
Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in…
OLED panel with advanced sub-pixel overhangs
Granted: October 22, 2024
Patent Number:
12127441
Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on and extending laterally past a base…
Vacuum seal for electrostatic chuck
Granted: October 22, 2024
Patent Number:
12125734
Exemplary substrate support assemblies may include an electrostatic chuck body. The body may include a support plate defining a substrate support surface. The body may include a base plate coupled with the support plate. A bottom surface of the base plate may define an annular recess. The body may include a cooling plate coupled with the base plate. The assemblies may include a support stem coupled with the body. The assemblies may include a heater embedded within the body. The…
Substrate carrier
Granted: October 22, 2024
Patent Number:
12125728
Embodiments of a substrate carrier are provided herein. In some embodiments, a substrate carrier includes a base plate, wherein the base plate is a thin, solid plate with no through holes or embedded components; and a plurality of raised portions extending from the base plate, wherein the plurality of raised portions include first raised portions and second raised portions, the first raised portions disposed radially inward from the second raised portions, wherein the base plate and the…
Methods for forming trench structures in substrates
Granted: October 22, 2024
Patent Number:
12125714
Methods for forming a trench structure with passivated surfaces. In some embodiments, a method of forming a trench structure may include etching a trench into a substrate material of the substrate, forming an oxide layer on surfaces of the trench using a dry oxide process at a temperature of less than approximately 450 degrees Celsius, selectively removing the oxide layer from surfaces of the trench, and forming a passivation layer on surfaces of the trench to form a homogeneous…
Selective carbon deposition on top and bottom surfaces of semiconductor substrates
Granted: October 22, 2024
Patent Number:
12125699
Semiconductor processing methods are described that include providing a substrate to a reaction chamber, where the substrate includes substrate trenches that have a top surface and a bottom surface. A deposition gas that includes a carbon-containing gas and a nitrogen-containing gas flows into a plasma excitation region of the reaction chamber. A deposition plasma having an electron temperature less than or about 4 eV is generated from the deposition gas. The methods further include…
Methods and apparatus for toroidal plasma generation
Granted: October 22, 2024
Patent Number:
12125689
Methods and apparatus for forming plasma in a process chamber use an annular exciter formed of a first conductive material with a first end electrically connected to an RF power source that provides RF current and a second end connected to a ground and an annular applicator, physically separated from the annular exciter, formed of a second conductive material with at least one angular split with an angle forming an upper overlap portion and a lower overlap portion separated by a high K…
L-motion slit door for substrate processing chamber
Granted: October 22, 2024
Patent Number:
12125688
Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a slit door having an arcuate profile and including a first plate slidably coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, wherein the second plate has an inner surface that includes silicon, and wherein the inner surface includes a plurality of grooves.
Method to improve wafer edge uniformity
Granted: October 22, 2024
Patent Number:
12125683
Exemplary semiconductor processing systems may include a chamber body having sidewalls and a base. The semiconductor processing systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate. The substrates support may include a shaft coupled with the support plate. The semiconductor processing systems may include a liner positioned within the chamber body and positioned radially outward of a peripheral edge of…
Ion extraction assembly having variable electrode thickness for beam uniformity control
Granted: October 22, 2024
Patent Number:
12125680
An ion extraction assembly for an ion source is provided. The ion extraction assembly may include a plurality of electrodes, wherein the plurality of electrodes comprises: a plasma-facing electrode, arranged for coupling to a plasma chamber; and a substrate-facing electrode, disposed outside of the plasma-facing electrode. The at least one electrode of the plurality of electrodes may include a grid structure, defining a plurality of holes, wherein the at least one electrode has a…
RF pulsing assisted low-k film deposition with high mechanical strength
Granted: October 22, 2024
Patent Number:
12125675
Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by an RF power operating at between about 50 W and 1,000 W, at a pulsing frequency below…
Pulsed voltage source for plasma processing applications
Granted: October 22, 2024
Patent Number:
12125673
Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; and a second switch, where a first terminal of the first voltage source is coupled to a first terminal of the first switch, and where a second terminal of…
Enhanced cross sectional features measurement methodology
Granted: October 22, 2024
Patent Number:
12123708
Disclosed herein are methods and systems for analyzing a cross-sectional feature of a structural element on a semiconductor wafer to determine whether an isolated or a systemic failure to reach preselected parameters occurred.
Differential capacitive sensor for in-situ film thickness and dielectric constant measurement
Granted: October 22, 2024
Patent Number:
12123090
Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface…
Edge blackening for optical devices
Granted: October 22, 2024
Patent Number:
12121925
An optical device coating assembly is provided. The optical device coating assembly includes a substrate support operable to retain an optical device substrate. The coating assembly further includes a first actuator connected to the substrate support. The first actuator is configured to rotate the substrate support. The coating assembly includes a holder configured to hold a coating applicator against an edge of the optical device substrate when the optical device substrate is rotated on…
Image stabilization for digital lithography
Granted: October 15, 2024
Patent Number:
12117732
The present disclosure provides methods and systems for correcting the shooting of images from a spatial light modulator (SLM) to a substrate, when cross-scan vibrations, including sub-pixel cross-scan vibrations, are present. The methods and systems include shifting a mask pattern on an SLM rotated relative to the in-scan direction of travel on a substrate, shifting along an axis of the SLM to correct for cross-scan vibrations, and either delaying, or accelerating, the shooting of the…
