In-situ semiconductor processing chamber temperature apparatus
Granted: December 31, 2024
Patent Number:
12183605
Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface…
High critical temperature metal nitride layer with oxide or oxynitride seed layer
Granted: December 31, 2024
Patent Number:
12185643
A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
Resonator, linear accelerator, and ion implanter having dielectric-free resonator chamber
Granted: December 31, 2024
Patent Number:
12185451
An apparatus may include a resonator chamber, arranged in a vacuum enclosure; an RF electrode assembly, arranged within the vacuum enclosure; and a resonator coil, disposed within the resonator chamber, the resonator coil having a high voltage end, directly connected to at least one RF electrode of the RF electrode assembly.
Threshold voltage modulation for gate-all-around FET architecture
Granted: December 31, 2024
Patent Number:
12183798
A method of forming a gate stack structure includes forming a dipole metal layer on a high-? gate dielectric layer on a semiconductor structure formed on a substrate, annealing the dipole metal layer, and removing the dipole metal layer. The dipole metal layer comprises dopants in the high-? gate dielectric layer.
MOSFET gate shielding using an angled implant
Granted: December 31, 2024
Patent Number:
12183794
Methods may include providing a device structure having a shielding layer formed beneath each trench in a MOSFET to protect trench corner breakdown. The method may include providing a device structure comprising an epitaxial layer, a well over the epitaxial layer, and a source layer over the well, and providing a plurality of trenches through the device structure. The method may further include forming a shielding layer in the device structure by directing ions into the plurality of…
Semiconductor device packaging methods
Granted: December 31, 2024
Patent Number:
12183684
The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor device package. In certain embodiments, a glass or silicon substrate is patterned by laser ablation to form structures for subsequent formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor device package, which may have one or more embedded dies therein. In certain embodiments, an insulating layer is formed over the…
Methods for copper doped hybrid metallization for line and via
Granted: December 31, 2024
Patent Number:
12183631
Methods for forming interconnects on a substrate with low resistivity and high dopant interfaces. In some embodiments, a method includes depositing a first copper layer with a dopant with a first dopant content of 0.5 percent to 10 percent in the interconnect by sputtering a first copper-based target at a first temperature of zero degrees Celsius to 200 degrees Celsius, annealing the substrate at a second temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the first…
Multi process air gap formation
Granted: December 31, 2024
Patent Number:
12183627
A method may include providing an array of patterned features on a substrate, the array of patterned features characterized by a spacing. The method may include directing a sputtering species in a first exposure to the array of patterned features, wherein an upper portion of a patterned feature of the array of patterned features forms a protrusion, extending towards an adjacent patterned feature, of the array of patterned features. The method may also include directing a depositing…
Apparatus and methods to transfer substrates into and out of a spatial multi-substrate processing tool
Granted: December 31, 2024
Patent Number:
12183618
Apparatus and methods for loading and unloading substrates from a spatial processing chamber are described. A support assembly has a rotatable center base and support arms extending therefrom. A support shaft is at the outer end of the support arms and a substrate support is on the support shaft. Primary lift pins are positioned within openings in the substrate support. Secondary lift pins are positioned within openings in the support arms and are aligned with the primary lift pins. An…
Methods and assemblies for gas flow ratio control
Granted: December 31, 2024
Patent Number:
12183606
A master controller identifies a flow ratio setpoint for at least one of a process gas or a carrier gas flow to a process chamber through a set of mass flow controllers. The master controller determines a flow setpoint for the at least one of the process gas or the carrier gas through the set of mass flow controllers based on the identified flow ratio setpoint. The master controller controls the at least one of the process gas flow or the carrier gas flow through each of the set of mass…
Method for forming and patterning a layer and/or substrate
Granted: December 31, 2024
Patent Number:
12183578
In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some…
Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process
Granted: December 31, 2024
Patent Number:
12183560
Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one…
Apparatus for temperature control in a substrate processing chamber
Granted: December 31, 2024
Patent Number:
12183559
An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly…
Support ring for an interlocking process kit for a substrate processing chamber
Granted: December 24, 2024
Patent Number:
D1055006
Methods of parallel transfer of micro-devices using treatment
Granted: December 24, 2024
Patent Number:
12176384
A method of transferring micro-devices includes selectively treating a first adhesive layer to form a treated portion and an untreated portion while micro-devices are attached the first adhesive layer. A second adhesive layer on a second surface is placed to abut the micro-devices. The first adhesive layer is exposed to illumination in a region that overlaps at least some of the treated portion and at least some of the untreated portion. Exposing the first adhesive layer to illumination…
Optical spectrum sensor wafer or robot for chamber condition monitoring
Granted: December 24, 2024
Patent Number:
12176188
Embodiments disclosed herein include a diagnostic substrate. In an embodiment, the diagnostic substrate comprises a substrate, a circuit board on the substrate, and a spectrometer coupled to the circuit board. In an embodiment, the diagnostic substrate further comprises a processor on the circuit board and communicatively coupled to the spectrometer.
Gray level ratio inspection
Granted: December 24, 2024
Patent Number:
12175656
A method for gray level ratio inspection comprising: obtaining an electron image that comprises region of interest (ROI) pixels of a ROI of the sample and reference pixels of a reference region of the sample, where the ROI pixels are obtained by illuminating the ROI with the electron beam and the reference pixels are obtained without illuminating the reference region with an electron beam; calculating a reference dark level value based on values of at least some of the reference pixels;…
Fluid delivery mounting panel and system
Granted: December 24, 2024
Patent Number:
12173807
A system includes a mounting panel having diffusion-bonded metal plates that form a reservoir to contain a process fluid, multiple channels through which to flow the process fluid, and vias through which to flow the process fluid to and from process fluid control components attached to the mounting panel. At least a pair of the multiple channels are connected with the reservoir. A temperature sensor is attached to a top of the mounting panel, the temperature sensor in fluid communication…
High pressure oxidation of metal films
Granted: December 24, 2024
Patent Number:
12173413
Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.
Carrier head membrane with regions of different roughness
Granted: December 24, 2024
Patent Number:
12172264
An apparatus comprises a flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus. The membrane comprises an outer surface providing a substrate receiving surface, wherein the outer surface has a central portion and an edge portion surrounding the central portion, wherein the central portion has a first surface roughness and the edge portion has a second surface roughness, the first surface roughness being greater than the second surface…
