Process control knob estimation
Granted: January 7, 2025
Patent Number:
12191126
The subject matter of this specification can be implemented in, among other things, methods, systems, computer-readable storage medium. A method can include receiving (i) sensor data indicating a first state of an environment of a processing chamber processing a substrate subsequent to a chamber recovery procedure, and (ii) substrate process data indicating a set of process parameter values associated with performing a substrate processing procedure by the processing chamber having the…
High resolution advanced OLED sub-pixel circuit and patterning method
Granted: January 7, 2025
Patent Number:
12193280
Embodiments described herein generally relate to a display. In one or more embodiments, a sub-pixel circuit includes at least two anodes disposed over a substrate. Adjacent anodes define a well. Adjacent overhang structures are disposed in the well. The overhang structures have an overhang thickness from the substrate to an upper surface of the overhang structures. The overhang thickness and the anode thickness are substantially equivalent. The overhang structures include overhang…
Controller and control techniques for linear accelerator and ion implanter having linear accelarator
Granted: January 7, 2025
Patent Number:
12193140
An apparatus may include global control module, the global control module including a digital master clock generator and a master waveform generator. The apparatus may also include a plurality of resonator control modules, coupled to the global control module. A given resonator control module of the plurality of resonator control modules may include a synchronization module, having a first input coupled to receive a resonator output voltage pickup signal from a local resonator, a second…
Methods for silicon carbide gate formation
Granted: January 7, 2025
Patent Number:
12191360
A method of forming a gate structure on a substrate with increased charge mobility. In some embodiments, the method may include depositing an amorphous carbon layer on a silicon carbide layer on the substrate to form a capping layer on the silicon carbide layer, annealing the silicon carbide layer at a temperature of greater than approximately 1800 degrees Celsius, forming a hard mask on the silicon carbide layer by patterning the amorphous carbon layer, etching a trench structure of the…
Methods for minimizing feature-to-feature gap fill height variations
Granted: January 7, 2025
Patent Number:
12191200
A method of gap filling a feature on a substrate decreases the feature-to-feature gap fill height variation by using a tungsten halide soak treatment. In some embodiments, the method may include heating a substrate to a temperature of approximately 350 degrees Celsius to approximately 450 degrees Celsius, exposing the substrate to a tungsten halide gas at a process pressure of approximately 5 Torr to approximately 25 Torr, soaking the substrate for a soak time of approximately 5 seconds…
Low resistivity tungsten film and method of manufacture
Granted: January 7, 2025
Patent Number:
12191198
Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.
Actively clamped carrier assembly for processing tools
Granted: January 7, 2025
Patent Number:
12191186
Embodiments of the present disclosure are related to carrier assemblies that can clamp more than one optical device substrates and methods for forming the carrier assemblies. The carrier assembly includes a carrier, one or more substrates, and a mask. The carrier is magnetically coupled to the mask to retain the one or more substrates. The carrier assembly is used for supporting and transporting the one or more substrates during processing. The carrier assembly is also used for masking…
Integrated substrate measurement system to improve manufacturing process performance
Granted: January 7, 2025
Patent Number:
12191176
A process recipe associated with a substrate at a manufacturing system is identified. A first set of measurements for the substrate is obtained from a substrate measurement subsystem. A second set of measurements for the substrate is obtained from one or more sensors of a chamber of the manufacturing system. A determination is made based on the obtained first set of measurements and the obtained second set of measurements of whether to modify the process recipe by at least one of…
Systems and methods for faceplate temperature control
Granted: January 7, 2025
Patent Number:
12191169
Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The processing systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The processing systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of…
Ribbon beam plasma enhanced chemical vapor deposition system for anisotropic deposition of thin films
Granted: January 7, 2025
Patent Number:
12191156
A ribbon beam plasma enhanced chemical vapor deposition (PECVD) system comprising a process chamber containing a platen for supporting a substrate, and a plasma source disposed adjacent the process chamber and adapted to produce free radicals in a plasma chamber, the plasma chamber having an aperture associated therewith for allowing a beam of the free radicals to exit the plasma chamber, wherein the process chamber is maintained at a first pressure and the plasma chamber is maintained…
Linear actuated 3 way spool valve with constant total flow
Granted: December 31, 2024
Patent Number:
12181054
A three-way valve is disclosed. The valve achieved constant flow rate as the valve transitions from 100% flow through the first path to 100% flow through the second path. The valve is linearly actuated, which allows a plurality of valves to be efficiently disposed in a manifold. The valve comprises a spool having two passageways therethrough which converge at the input. The spool is disposed in a housing. By linear movement of the spool within the housing, the amount of the incoming flow…
High-temperature substrate support assembly with failure protection
Granted: December 31, 2024
Patent Number:
12185433
A substrate support assembly includes a plate structure and an insulator structure. The plate structure includes an upper plate and a lower plate. The lower plate includes a lower plate structure surface. The insulator structure is disposed beneath the plate structure. The insulator structure includes a lower insulator structure surface and an upper insulator structure surface. A first portion of the upper insulator structure surface is recessed with respect to a second portion of the…
Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process
Granted: December 31, 2024
Patent Number:
12183560
Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one…
Apparatus for temperature control in a substrate processing chamber
Granted: December 31, 2024
Patent Number:
12183559
An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly…
Apparatus and methods for controlling ion energy distribution
Granted: December 31, 2024
Patent Number:
12183557
Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a substrate electrode for applying a substrate voltage to a substrate, and an edge ring electrode embedded for applying an edge ring voltage to an edge ring. The apparatus further includes a substrate voltage control circuit coupled to the substrate…
Baffle implementation for improving bottom purge gas flow uniformity
Granted: December 31, 2024
Patent Number:
12183553
The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to…
High bandwidth architecture for centralized coherent control at the edge of processing tool
Granted: December 31, 2024
Patent Number:
12183548
Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.
Method of deep learning-based examination of a semiconductor specimen and system thereof
Granted: December 31, 2024
Patent Number:
12183066
A computerized system and method of training a deep neural network (DNN) is provided. The DNN is trained in a first training cycle using a first training set including first training samples. Each first training sample includes at least one first training image synthetically generated based on design data. Upon receiving a user feedback with respect to the DNN trained using the first training set, a second training cycle is adjusted based on the user feedback by obtaining a second…
Chamber and methods of treating a substrate after exposure to radiation
Granted: December 31, 2024
Patent Number:
12181801
A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion density plasma is reduced using a diffuser to form a second low ion density plasma. The second low ion density plasma is an electron cloud or a dark plasma. An electric field is formed between a substrate support and the diffuser and through the second…
Color-changing torque seal for electrical connections
Granted: December 31, 2024
Patent Number:
12181349
The disclosure describes devices and systems for a color-changing torque seal. A system includes multiple electrical connections. Each electrical connection of the multiple electrical connections includes a first electrical connector and a second electrical connector that contacts the first electrical connector. Each electrical connection further includes a color-changing torque seal disposed on the first electrical connector and the second electrical connector. The color-changing torque…
