Stable diodes for low and high frequency applications
Granted: November 16, 2006
Application Number:
20060255379
A diode is defined on a die. The diode includes a substrate of P conductivity having an upper surface and a lower surface, the substrate having first and second ends corresponding to first and second edges of the die. An anode contacts the lower surface of the substrate. A layer of N conductivity is provided on the upper surface of the substrate, the layer having an upper surface and a lower surface. A doped region of N conductivity is formed at an upper portion of the layer. A cathode…
SEMICONDUCTOR POWER DEVICE WITH PASSIVATION LAYERS
Granted: November 2, 2006
Application Number:
20060246642
A semiconductor power device comprises a semiconductor substrate. The substrate includes an N-type silicon region and N+ silicon region. An oxide layer overlies the N? type silicon region, the oxide layer formed using a Plasma Enhanced Chemical Vapor deposition (PECVD) method. First and second electrodes are coupled to the N? type silicon region and the N+ type silicon region, respectively. The oxide layer has a thickness 0.5 to 3 microns. The power device also includes a polymide layer…
Integrated packaged having magnetic components
Granted: July 13, 2006
Application Number:
20060152911
A packaged device is obtained using an innovative package approach that allows integration of miniature planar magnetics into standard low-cost semiconductor packages (BGA, PDIP, SOIC, etc.) with electronic and electrical components, where those components can be C&W and/or SMD types. The packaged device includes a planar magnetic substrate having first and second dielectric layers, the first dielectric layer having a first winding defined thereon, the second dielectric layer having…
Method for fabricating forward and reverse blocking devices
Granted: March 23, 2006
Application Number:
20060063313
A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion…
Hot-swap protection circuit
Granted: January 12, 2006
Application Number:
20060007620
Embodiments of the present invention provide methods and circuitry for protecting a circuit during hot-swap events. Hot swap protection circuitry includes as overcurrent detection circuit which decouples power from a load. Circuitry is provided to detect ground-fault conditions. Noise detection circuitry is provided to reduce noise in the power that is delivered to the load.
Switching power supply with direct conversion off AC power source
Granted: January 12, 2006
Application Number:
20060007717
A power supply circuit, comprising a first reverse blocking transistor coupled to an AC power line; a second reverse blocking transistor coupled to the AC power line; a first inductor provided between the first reverse blocking transistor and the AC power line and configured to store energy; a first diode having a first terminal that is coupled to one end of the first inductor; a first capacitor having a terminal that is coupled to a second terminal of the first diode; and a first output…
Heatsink for power devices
Granted: December 29, 2005
Application Number:
20050284609
A heatsink for a power device comprises an upper conductive plate providing a first surface; a lower conductive plate providing a second surface; a middle conductive plate provided between the upper and lower plates, the middle plate having a hollow portion and a solid portion, the hollow portion defining an area to receive coolant, wherein the power device is provided on the first or second surface, so that heat generated by the power device can be transferred to the coolant. The…
RF generator with reduced size and weight
Granted: December 15, 2005
Application Number:
20050275456
A radio frequency (RF) generator comprises a first half bridge including first and second power transistors; a second half bridge including first and second power transistors; an output node coupling the first and second half bridges and RF signals to a load; positive and negative rails coupled to a power source; a first blocking capacitor provided between the positive rail and the load; a second blocking capacitor provided between the negative rail and the load; and an offline…
RF generator with commutation inductor
Granted: December 15, 2005
Application Number:
20050275980
A radio frequency (RF) generator comprises a first half bridge including first and second power transistors; a second half bridge including first and second power transistors; an RF output node coupling output nodes of the first and second half bridges, the output node outputting RF signals to a load; positive and negative rails coupled to a power source; and a first commutation inductor provided to store energy to commutate at least one of the half bridges.
RF generator with voltage regulator
Granted: December 8, 2005
Application Number:
20050270097
A radio frequency (RF) generator includes a first half bridge including first and second power transistors; a second half bridge including first and second power transistors; an output node coupling the first and second half bridges and RF signals to a load; positive and negative rails coupled to an AC power source via a rectifier; a first blocking capacitor provided between the positive rail and the load; a second blocking capacitor provided between the negative rail and the load; and a…
RF generator with phase controlled mosfets
Granted: December 8, 2005
Application Number:
20050270096
A radio frequency (RF) generator comprises a first half bridge including first and second power transistors; a second half bridge including first and second power transistors; an output node coupling the first and second half bridges and RF signals to a load; positive and negative rails coupled to an AC power source via rectifier; a first blocking capacitor provided between the positive rail and the load; and a second blocking capacitor provided between the negative rail and the load.…
High voltage power device with low diffusion pipe resistance
Granted: October 27, 2005
Application Number:
20050239259
A method for forming a high voltage semiconductor power device comprises providing a first dopant source of first conductivity on an upper surface of a substrate of second conductivity. A second dopant source of first conductivity is provided on a lower surface of the substrate. The substrate is annealed for a first given time to drive the dopants from the first and second dopants sources into the substrate. The first and second dopant sources are removed from the upper and lower…
Passivation of power semiconductor device
Granted: October 20, 2005
Application Number:
20050230778
A vertical power semiconductor device comprises a substrate including a first layer that is a first conductivity type. A first conductive region is provided proximate an upper surface of the substrate, the first conductive region being a second conductivity type that is different from the first conductivity type. A first electrode is provided proximate the upper surface of the substrate and coupled to the first conductive region. A second electrode is provided proximate a lower surface…
Fast switching diode with low leakage current
Granted: October 6, 2005
Application Number:
20050218430
A fast switching diode includes an n? layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n? layer. The converted region includes platinum and has a first depth. The converted region has a platinum concentration that is substantially greater than an n-type dopant concentration in the converted region. First and second n+…
Power semiconductor component in the planar technique
Granted: September 29, 2005
Application Number:
20050212075
In a power semiconductor component produced in a planar technique, a near-surface structure having at least one depression is formed in a surface region of an edge termination adjacent a main surface of the semiconductor body. The structure lies inside a space charge region formed when a voltage is applied at a junction between semiconductor regions of opposite conduction type. Dielectric material may fill the depression and form a passivation layer on the surface region. The depression…
Discrete and integrated photo voltaic solar cells
Granted: July 7, 2005
Application Number:
20050145274
A photovoltaic (PV) cell device comprises a first semiconductor substrate; a second semiconductor substrate bonded to the first semiconductor substrate; an insulating layer provided between the first and second substrates to electrically isolate the first substrate from the second substrate; a plurality of PV cells defined on the first substrate, each PV cell including a n-type region and a p-type region; a plurality of vertical trenches provided in the first substrate to separated the…
Photo voltaic solar cells integrated with mosfet
Granted: June 23, 2005
Application Number:
20050133081
A photovoltaic (PV) device comprising a silicon-on-insulator (SOI) substrate including a first substrate, a second substrate, and an insulating layer provided between the first and second substrates; a plurality of tubs defined using the first substrate, each tub being isolated from an adjacent tub using the insulation layer and an isolation structure; a first PV array including a plurality of PV cells to generate a first voltage when light is shined on the first PV array; a second PV…
Solar cell device having a charge pump
Granted: March 24, 2005
Application Number:
20050061361
A solar cell device includes a solar cell section configured to output a first voltage upon receiving light. A charge pump circuit includes a first charge pump. The first charge pump includes a first terminal and a second terminal. The first terminal is configured to receive the first voltage from the solar cell section, and the second terminal is configured to output a second voltage that is higher than the first voltage. An output section is configured to receive an output voltage…
Non-uniform power semiconductor and method for making
Granted: November 25, 2004
Application Number:
20040232484
An active area of a power device comprises active cells having designs that vary depending on where they are located in the active area. Design variations include structural variations and variations in the material used to produce the cells.
Hot-swap protection circuit
Granted: November 25, 2004
Application Number:
20040233603
Embodiments of the present invention provide methods and circuitry for protecting a circuit during hot-swap events. Hot swap protection circuitry includes as overcurrent detection circuit which decouples power from a load. Circuitry is provided to detect ground-fault conditions. Noise detection circuitry is provided to reduce noise in the power that is delivered to the load.
