Insulated gate transistor devices with temperature and current sensor
Granted: November 5, 1991
Patent Number:
5063307
A technique for sensing the temperature of power MOS devices contemplates a main transistor and monolithically formed sense transistor. A resistor, which may integrated into the device or may be off chip, is connected between the respective source nodes of the main transistor and the sense transistor (as in a normal current mirror). However, the respective gate nodes of the main transistor and the sense transistor are not directly connected to each other (in contrast to the normal…
Monolithic temperature sensing device
Granted: September 17, 1991
Patent Number:
5049961
A semiconductor diode monolithically integrated onto a power MOS transistor or power IGBT for temperature sensing. With the application of a positive bias and a constant current, the diode provides a voltage that varies linearly as a function of temperature for the power transistor. The diode is constructed in such a manner so as to prevent latch-up (i.e. where a parasite silicon controlled rectifiers is turned on, locking the power transistor in an on condition) and voltage breakdown…
Simplified current sensing structure for MOS power devices
Granted: July 23, 1991
Patent Number:
5034796
In a DMOS power device, a current sensing apparatus comprises bonding pads arranged in specific locations with at least one current sense pad having active cells thereon and a source pad which is separated from the current sense pad. The configuration of cells provides that sources are tied together by a metal layer, which, due to its specific resistance, forms a resistance path between the source pad and the current sense pad or more specifically between the points of contact of a…
Method of annealing fully-fabricated, radiation damaged semiconductor devices
Granted: May 21, 1991
Patent Number:
5017508
A method and apparatus for annealing devices having radiation induced damage is disclosed. A device is exposed to electron irradiation to induce damage to the active area. The device is then annealed with a rapid thermal anneal at a low temperature. The rapid thermal anneal may, optionally, be followed by a conventional oven or furnace anneal at a temperature of about 300.degree. to 450.degree. C. The method produces devices having improved and well controlled characteristics such as…
Multi-lead hermetic power package with high packing density
Granted: November 20, 1990
Patent Number:
4972043
An hermetic package for power semiconductor devices is disclosed. The package includes a generally rectangular cavity with leads extending through the walls thereof. The bottom of the cavity is defined by a base which includes a pair of mounting tabs protruding from opposite corners thereof. The mounting tabs are configured to allow the packages to be nested together. A cover attached to the walls provides a hermetically sealed package.
High power transistor with voltage, current, power, resistance, and temperature sensing capability
Granted: June 5, 1990
Patent Number:
4931844
One or more probe cells are use to sense voltage and current accurately and without affecting performance of the switching device (T.sub.1) or the load. In addition, power, resistance, and temperature can be determined from the voltage and current. Voltage sensing is accomplished by placing a large value resistor (R.sub.3) (much greater than the on-resistance of the probe cell(s) between the probe cell(s) and its low voltage connection (the common source terminal in the case of…
Circuit for limiting inrush current during initial turn-on of a clock-derived power supply
Granted: March 27, 1990
Patent Number:
4912619
A current limiting circuit wherein a first transistor has an input terminal coupled to a power source, an output terminal coupled to a node which supplies current to the rest of the system, and a control terminal coupled to a source of clock pulses for flowing current from the power source into the node in response to the clock pulses. A second transistor has an input terminal coupled to the power source, an output terminal coupled to the node, and a control terminal coupled to the clock…
Circuit for sensing voltages beyond the supply voltage of the sensing circuit
Granted: December 26, 1989
Patent Number:
4890013
A voltage sensing circuit wherein voltages that appear at first and second sensing nodes are converted into first and second currents which are proportional to their respective voltages. A comparing circuit compares the first current to the second current and generates a difference current proportional to the difference between the magnitudes of the two currents. A rectifier circuit rectifies the difference current, and the difference current is added to a reference current. The combined…
DV/DT of power MOSFETS
Granted: November 14, 1989
Patent Number:
4881106
A power MOSFET, such as an n-channel MOSFET, is structured to increase the permissible maximum rate of change in voltage during reverse recovery by reducing or eliminating the well containing the active region under the gate bond pad, or any pad which must be isolated from the source metallization, and by providing a polysilicon sheet between the pad area and the substrate. In an n-channel MOSFET where the gate pad is to be protected, the well is a p-well and the active region is the…
Circuit for sensing FET or IGBT drain current over a wide dynamic range
Granted: October 24, 1989
Patent Number:
4876517
A current sensing circuit includes a pair of power devices connected in parallel. The mirror terminal of the first power device is coupled to a small sense resistance, and the mirror terminal of the second power device is connected to a large sense resistance. Each mirror terminal is coupled to its own comparator. Small currents are sensed by the comparator coupled to the mirror terminal of the first power device, and large currents are sensed by the comparator coupled to the mirror…
Monolithic semiconductor device and method of manufacturing same
Granted: August 22, 1989
Patent Number:
4860072
A monolithic semiconductor device for use in various applications such as lateral and vertical MOS transistors, insulated gate conductivity modulated devices and the like together with a method of manufacturing same. The device includes source, body and drain regions, with the body region including a channel section which is disposed adjacent an insulated gate formed on the surface of the device. The source region includes a central contact area flanked by a pair of body segments which…
Semiconductor wafer with dice having briding metal structure and method of manufacturing same
Granted: May 30, 1989
Patent Number:
4835592
A monolithic semiconductor device and method of manufacturing same having improved high voltage performance. When the device is in wafer form, a metallization structure is formed over scribe zones which are disposed along the scribe lines which define the edge of each device. The scribe zones are normally not covered with oxide during conventional semiconductor fabrication so that an ohmic contact is formed with semiconductor body. The metal structure includes a peripheral section which…
