KLA-Tencor Patent Applications

Spin Coating Modeling

Granted: March 3, 2011
Application Number: 20110054664
A method for setting processing parameters for fabricating an integrated circuit, by creating a mathematical model of a spin coated surface of a material over a non-flat substrate surface, where the mathematical model includes, a smoothing algorithm, where the smoothing algorithm uses as inputs only, a nominal thickness of the spin coated surface, a minimum thickness of the spin coated surface, and an interaction length, and a constraint that the spin coated surface cannot intersect the…

Image Collection

Granted: February 24, 2011
Application Number: 20110043797
An inspection system for creating images of a substrate. A light source directs an incident light onto the substrate, and a light source timing control controls a pulse timing of the incident light. A stage holds the substrate and moves the substrate under the incident light, so that the substrate reflects the incident light as a reflected light. A stage position sensor reports a position of the stage, and a stage position control controls the position of the stage. A time domain…

PROCESS CONDITION SENSING WAFER AND DATA ANALYSIS SYSTEM

Granted: February 17, 2011
Application Number: 20110040527
A measuring device incorporating a substrate with sensors that measure the processing conditions that a wafer may undergo during manufacturing. The substrate can be inserted into a processing chamber by a robot head and the measuring device can transmit the conditions in real time or store the conditions for subsequent analysis. Sensitive electronic components of the device can be distanced or isolated from the most deleterious processing conditions in order increase the accuracy,…

Measurement and control of strained devices

Granted: February 3, 2011
Application Number: 20110027919
A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.

Dual Scanning Stage

Granted: January 27, 2011
Application Number: 20110022227
A profilometer having a guide beam for providing translational movement of substrates in a Y axis relative to a stylus. A first stage receives a first substrate, where the first stage is slidably mounted to the guide beam. The first stage is associated with a first motor for providing independent translational movement for the first stage in an X axis relative to the stylus. A second stage receives a second substrate, where the second stage is slidably mounted to the guide beam. The…

Auto Focus System for Reticle Inspection

Granted: January 27, 2011
Application Number: 20110019206
Methods and apparatus relating to the inspection of photomasks are described. In an embodiment, an inspection tool may be automatically focused on a reticle utilizing various topographic mapping techniques. Other embodiments are also described.

Scattered Light Separation

Granted: January 27, 2011
Application Number: 20110019197
An apparatus for detecting top scattered light from a substrate. A source directs a light onto a position on the substrate. The light thereby reflects off in a specular beam, scatters off the top surface, and scatters off a bottom surface of the substrate. An objective receives the top and bottom scattered light. The objective has a first focal point focused on the position on the top surface of the substrate, and a second focal point focused on a pinhole field stop. The pinhole field…

METHODS FOR GENERATING A STANDARD REFERENCE DIE FOR USE IN A DIE TO STANDARD REFERENCE DIE INSPECTION AND METHODS FOR INSPECTING A WAFER

Granted: December 30, 2010
Application Number: 20100329540
Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the…

SYSTEM AND METHOD FOR PERFORMING PHOTOTHERMAL MEASUREMENTS AND RELAXATION COMPENSATION

Granted: December 30, 2010
Application Number: 20100328670
A device and methods for performing a photothermal measurement and relaxation compensation of a sample are disclosed. The device may include a probe beam source, a pump beam source, a sample, and a detector array. A method may include adjusting an intensity modulated pump beam power, adjusting a probe beam power to increase a response measurement location temperature and increase a modulated optical reflectance signal, directing the intensity modulated pump beam and the probe beam along…

Method for Measuring Thermo-Optically Induced Material Phase-Change Response in a Multiple Layer Thin Film Structure Using Visible and Ultraviolet Spectroscopy

Granted: December 16, 2010
Application Number: 20100318212
A method and device for facilitating measurement of thermo-optically induced material phase change response in a thin planar or a grating film stack is disclosed. The method may include using small-spot visible and ultraviolet spectra (ellipsometric or reflectance) for measuring a material phase change response. The device may include a measurement system platform, at least one electrical resistor, at least one external electric probe, and ohmic contact circuitry.

METHODS FOR DEPTH PROFILING IN SEMICONDUCTORS USING MODULATED OPTICAL REFLECTANCE TECHNOLOGY

Granted: December 16, 2010
Application Number: 20100315625
Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical…

Metrology system and method for monitoring and correcting system generated errors

Granted: December 2, 2010
Application Number: 20100302555
A metrology system (1) and a method for determining low order errors are disclosed. At least one measurement objective (9) for the determination of the position of structures (3) on a substrate (2) is provided. The substrate (2) to be measured rests in a support on three points of support (52). The support exhibits an opening (53) for measuring the substrate (2). At least two marks (54) are provided on the support for the mask (2) in such a way that the marks (54) are capturable with the…

Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems

Granted: December 2, 2010
Application Number: 20100301437
A sensor for capturing light at the ultraviolet (UV) or the deep UV wavelength includes a multi-layer anti-reflective coating (ARC). In a two-layer ARC, the first layer is formed on either the substrate or the circuitry layer, and the second layer is formed on the first layer and receives the light as an incident light beam. Notably, the first layer is at least twice as thick as the second layer, thereby minimizing an electrical field at a substrate surface due to charge trapping in the…

Apparatus for the Optical Inspection of Wafers

Granted: November 25, 2010
Application Number: 20100295938
An apparatus (1) for the optical inspection of wafers is disclosed, which comprises an assembly unit (10) which carries optical elements (30, 31, 32, 33) of at least one illumination path (3) for a bright field illumination and optical elements (50, 51, 52, 60, 61, 62, 70, 71, 72, 80, 81, 82) of at least one illumination path (5, 6, 7, 8) for a dark field illumination. The assembly unit (10) furthermore carries plural optical elements (91, 92, 93, 94, 95, 96, 97, 98, 99, 100) of at least…

Z-STAGE WITH DYNAMICALLY DRIVEN STAGE MIRROR AND CHUCK ASSEMBLY

Granted: November 25, 2010
Application Number: 20100295258
Substrate support apparatus and methods are disclosed. Motion of a substrate chuck relative to a stage mirror may be dynamically compensated by sensing a displacement of the substrate chuck relative to the stage mirror and coupling a signal proportional to the displacement in one or more feedback loops with Z stage actuators and/or XY stage actuators coupled to the stage mirror. Alternatively, a substrate support apparatus may include a Z stage plate a stage mirror, one or more actuators…

PROCESS CONDITION SENSING WAFER AND DATA ANALYSIS SYSTEM

Granted: November 25, 2010
Application Number: 20100294051
A measuring device incorporating a substrate with sensors that measure the processing conditions that a wafer may undergo during manufacturing. The substrate can be inserted into a processing chamber by a robot head and the measuring device can transmit the conditions in real time or store the conditions for subsequent analysis. Sensitive electronic components of the device can be distanced or isolated from the most deleterious processing conditions in order increase the accuracy,…

METHODS AND SYSTEMS FOR CONTROLLING VARIATION IN DIMENSIONS OF PATTERNED FEATURES ACROSS A WAFER

Granted: November 4, 2010
Application Number: 20100279213
Methods and systems for controlling variation in dimensions of patterned features across a wafer are provided. One method includes measuring a characteristic of a latent image formed in a resist at more than one location across a wafer during a lithography process. The method also includes altering a parameter of the lithography process in response to the characteristic to reduce variation in dimensions of patterned features formed across the wafer by the lithography process. Altering…

METHODS AND SYSTEMS FOR DETERMINING A CRITICAL DIMENSION AND OVERLAY OF A SPECIMEN

Granted: October 28, 2010
Application Number: 20100271621
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple…

Back Quartersphere Scattered Light Analysis

Granted: October 21, 2010
Application Number: 20100265518
A surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The optical collection and detection system features back collectors disposed in the back quartersphere, outside the incident plane, for collecting light scattered from the surface of the workpiece. The back collectors are disposed at a relative minimum in the portion of scattered light…

METHODS AND SYSTEMS FOR INSPECTION OF A SPECIMEN USING DIFFERENT INSPECTION PARAMETERS

Granted: September 23, 2010
Application Number: 20100238433
Methods and systems for inspection of a specimen using different parameters are provided. One computer-implemented method includes determining optimal parameters for inspection based on selected defects. This method also includes setting parameters of an inspection system at the optimal parameters prior to inspection. Another method for inspecting a specimen includes illuminating the specimen with light having a wavelength below about 350 nm and with light having a wavelength above about…